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1. 发明申请

US20050051930A1 Fine structure composite and drying method of fine structure using the same 审中-公开
标题翻译：精细结构复合和干燥方法的精细结构使用相同
公开(公告)号：US20050051930A1
公开(公告)日：2005-03-10
申请号：US10972672
申请日：2004-10-26
申请人： Nobuyuki Kawakami , Takashi Kobori , Toshihiro Kugimiya
发明人： Nobuyuki Kawakami , Takashi Kobori , Toshihiro Kugimiya
IPC分类号： C23C26/00 , B29C71/00 , B32B27/00 , B81C1/00 , H01L21/027
CPC分类号： B81C1/00928 , B81C1/00841 , B81C1/0092 , Y10T428/31855 , Y10T428/31928
摘要： The present invention provides a fine structure composite composed of a fine structure and a protection film formed thereon. The fine structure composite is used prior to a step of drying the fine structure in a high pressure chamber using a liquefied or a supercritical fluid, and the protection film is formed of a high viscosity material. When the fine structure such as a semiconductor substrate after development is dried using a liquefied or a supercritical fluid, the surface of the fine structure such as the substrate is prevented from being spontaneously dried, and as a result, a pattern on the surface is prevented from being collapsed.
摘要翻译：本发明提供由精细结构和形成在其上的保护膜构成的精细结构复合体。在使用液化或超临界流体的高压室中干燥精细结构的步骤之前使用精细结构复合材料，并且保护膜由高粘度材料形成。当使用液化或超临界流体干燥显影后的半导体基板等微细结构时，防止诸如基板的精细结构的表面自发干燥，结果，防止了表面上的图案从崩溃。

2. 发明申请

US20090098311A1 METHOD FOR FORMING THIN FILM 审中-公开
标题翻译：形成薄膜的方法
公开(公告)号：US20090098311A1
公开(公告)日：2009-04-16
申请号：US12331638
申请日：2008-12-10
申请人： Nobutaka AOMINE , Yuki Aoshima , Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori
发明人： Nobutaka AOMINE , Yuki Aoshima , Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori
IPC分类号： H05H1/46
CPC分类号： C23C16/505 , C23C16/40 , C23C16/54 , H01J37/32 , H01J37/32091 , H01J37/32568 , H01J37/32761
摘要： When a thin film is formed on a substrate by means of a plasma under a pressure atmosphere close to the atmospheric pressure, it is possible to control particles to be formed by a reaction of a reaction gas and to form a uniform thin film constantly, even when the space between an electrode and the substrate is set to be wider than a conventional method.An electric power is supplied to a cylindrical rotating electrode 12 whose rotational axis is parallel to a substrate, to generate a plasma in a space between this rotating electrode 12 and the substrate S, and a supplied reaction gas G is activated by means of the generated plasma to form a thin film on the substrate S, is wherein a high-frequency electric power having a frequency of from 100 kHz to 1 MHz is supplied to the rotating electrode 12.
摘要翻译：当在接近大气压的压力气氛下通过等离子体在基板上形成薄膜时，可以通过反应气体的反应来控制形成的颗粒，并且能够均匀地形成均匀的薄膜，甚至当电极和衬底之间的空间被设定为比常规方法宽时。向旋转轴平行于基板的圆筒状旋转电极12供给电力，在该旋转电极12与基板S之间的空间中产生等离子体，通过所产生的反应气体G 在衬底S上形成薄膜的等离子体，其中具有100kHz至1MHz频率的高频电力被提供给旋转电极12。

3. 发明授权

US07897025B2 Method and apparatus for forming thin film 有权
标题翻译：用于形成薄膜的方法和装置
公开(公告)号：US07897025B2
公开(公告)日：2011-03-01
申请号：US10973249
申请日：2004-10-27
申请人： Kenichi Inoue , Hiroyuki Takamatsu , Takashi Kobori , Kazushi Hayashi , Toshihiro Kugimiya
发明人： Kenichi Inoue , Hiroyuki Takamatsu , Takashi Kobori , Kazushi Hayashi , Toshihiro Kugimiya
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , C23C14/228 , C23C14/26 , H01J37/32009
摘要： A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like is suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.
摘要翻译：具有圆筒形周面的转子设置在其中引入载气的处理容器中，并且转子外周表面与基板的表面之间具有预定的间隙。包括成膜材料的原子分子和簇粒子的成膜颗粒通过溅射从成膜材料供给构件的表面散射，转子旋转以在转子周边表面附近形成载气流。成膜微粒通过载气流输送到基板的表面附近并粘附到基板的表面。结果，抑制高能粒子等的不利影响，通过蒸发或溅射法有效地形成令人满意的薄膜，对原料气体的限制较少，而不需要大型设备。

4. 发明授权

US07459187B2 Surface-treatment method and equipment 失效
标题翻译：表面处理方法和设备
公开(公告)号：US07459187B2
公开(公告)日：2008-12-02
申请号：US10577235
申请日：2004-10-27
申请人： Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori , Junichi Ebisawa , Kazuo Sato , Yukio Yoshikawa
发明人： Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori , Junichi Ebisawa , Kazuo Sato , Yukio Yoshikawa
IPC分类号： H05H1/24
CPC分类号： H01J37/32449 , C23C16/45589 , H01J37/3244 , H01L21/02164 , H01L21/02186 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/67017
摘要： An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).
摘要翻译：本发明的目的是使得可以以更简单和更低成本的方式将气体均匀地供应到基材上，从而实现高质量的表面处理。为此，通过在基材12的表面上沿特定方向供给表面处理气体来对基材12进行表面处理，转子的圆周表面具有圆筒形周面（24）经由间隙（23）面对，形成在与基材分离的位置处的基材（12）或相对构件（20）的表面，并且转子围绕轴线旋转作为供给表面处理气体的装置，几乎垂直于基材（12） - 输送方向的方向。通过旋转，表面处理气体被转子（24）的外周表面拖动，被引导到间隙（23）中，然后从间隙（23）进给到基体材料（12）的表面上）。

5. 发明申请

US20070134414A1 Surface-treatment method and equipment 失效
标题翻译：表面处理方法和设备
公开(公告)号：US20070134414A1
公开(公告)日：2007-06-14
申请号：US10577235
申请日：2004-10-27
申请人： Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori , Junichi Ebisawa , Kazuo Sato , Yukio Yoshikawa
发明人： Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori , Junichi Ebisawa , Kazuo Sato , Yukio Yoshikawa
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32449 , C23C16/45589 , H01J37/3244 , H01L21/02164 , H01L21/02186 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/67017
摘要： An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).
摘要翻译：本发明的目的是使得可以以更简单和更低成本的方式将气体均匀地供应到基材上，从而实现高质量的表面处理。为此，通过在基材12的表面上沿特定方向供给表面处理气体来对基材12进行表面处理，转子的圆周表面具有圆筒形周面（24）经由间隙（23）面对，形成在与基材分离的位置处的基材（12）或相对构件（20）的表面，并且转子围绕轴线旋转作为供给表面处理气体的装置，几乎垂直于基材（12） - 输送方向的方向。通过旋转，表面处理气体被转子（24）的外周表面拖动，被引导到间隙（23）中，然后从间隙（23）进给到基体材料（12）的表面上）。

6. 发明申请

US20050136694A1 Method and apparatus for forming thin film 有权
标题翻译：用于形成薄膜的方法和装置
公开(公告)号：US20050136694A1
公开(公告)日：2005-06-23
申请号：US10973249
申请日：2004-10-27
申请人： Kenichi Inoue , Hiroyuki Takamatsu , Takashi Kobori , Kazushi Hayashi , Toshihiro Kugimiya
发明人： Kenichi Inoue , Hiroyuki Takamatsu , Takashi Kobori , Kazushi Hayashi , Toshihiro Kugimiya
IPC分类号： C23C14/34 , C23C14/24 , C23C14/26 , C23C14/35 , C23C16/00 , H01J37/32 , H01L21/203 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： C23C14/35 , C23C14/228 , C23C14/26 , H01J37/32009
摘要： A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. The rotor peripheral surface is also opposed to a film-forming material supplying member having a film-forming material on its surface at a position apart from the position where the rotor faces the substrate. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like can be suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.
摘要翻译：具有圆筒形周面的转子设置在其中引入载气的处理容器中，并且转子外周表面与基板的表面之间具有预定的间隙。转子外周表面也与在其表面上离开转子面向基板的位置的表面上的成膜材料供给构件相对。包括成膜材料的原子分子和簇粒子的成膜颗粒通过溅射从成膜材料供给构件的表面散射，转子旋转以在转子周边表面附近形成载气流。成膜微粒通过载气流输送到基板的表面附近并粘附到基板的表面。结果，可以抑制高能粒子等的不利影响，通过蒸发或溅射法有效地形成令人满意的薄膜，对原料气体的限制较少，而无需大型设备。

7. 发明授权

US07067903B2 Heat spreader and semiconductor device and package using the same 失效
标题翻译：散热器和半导体器件和封装使用相同
公开(公告)号：US07067903B2
公开(公告)日：2006-06-27
申请号：US10701499
申请日：2003-11-06
申请人： Takeshi Tachibana , Kazushi Hayashi , Kenichi Inoue , Yoshihiro Yokota , Koji Kobashi , Nobuyuki Kawakami , Takashi Kobori
发明人： Takeshi Tachibana , Kazushi Hayashi , Kenichi Inoue , Yoshihiro Yokota , Koji Kobashi , Nobuyuki Kawakami , Takashi Kobori
IPC分类号： H01L29/06 , H01L23/495 , H01L23/06 , H01L23/10
CPC分类号： H01L23/3732 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
摘要翻译：半导体器件和封装具有直接设置在半导体器件的反面上的散热器。该散热器包括金刚石层或含有金刚石和陶瓷的层，例如碳化硅和氮化铝。散热器直接形成在用于半导体器件的衬底上。特别地，散热器由金刚石层和一个或两个金属或陶瓷构件组成，其通过一个或两个聚合物粘合剂层结合到金刚石层。该金刚石层具有穿过厚度或微晶结构的纤维结构。在金刚石层的面向一个或两个金属或陶瓷构件的表面上形成纤毛。

8. 发明授权

US5773984A Method of inspecting abnormality occurring inside pipe and apparatus for practicing the method 失效
标题翻译：管道内部异常检测方法及其实施方法
公开(公告)号：US5773984A
公开(公告)日：1998-06-30
申请号：US585979
申请日：1996-01-12
申请人： Kiichi Suyama , Hajime Furusawa , Yasuharu Hosohara , Takashi Kobori
发明人： Kiichi Suyama , Hajime Furusawa , Yasuharu Hosohara , Takashi Kobori
IPC分类号： G01B15/00 , G01B15/04 , G01N22/02 , G06T7/60 , G01R29/00
CPC分类号： G06T7/60 , G01B15/00 , G01B15/04 , G01N22/02
摘要： A method of inspecting an abnormality occurring inside a pipe to be inspected, and an apparatus for practicing the method, which includes the steps of transmitting an electric radio or radio frequency (RF) wave having a predetermined frequency from an antenna of a transmitter located at a predetermined position inside the pipe, receiving the transmitted RF wave by an antenna of a receiver located at a predetermined position inside the pipe, and discriminating a characteristic of the received RF wave. The characteristic of the received RF wave can be the intensity of the RF wave, and an attenuation amount is detected in a first example. Alternatively, the characteristic of the received RF wave may be the time required to reflect the transmitted RF wave and receive it with the receiver, and the time interval between transmission of the RF wave and reception of the reflected RF wave is measured in this alternative.
摘要翻译：一种检查在待检查的管道内发生的异常的方法，以及一种用于实施该方法的装置，包括以下步骤：从位于所述检测器的发射机的天线发射具有预定频率的电波或射频（RF）波在管道内的预定位置，通过位于管道内的预定位置处的接收器的天线接收发送的RF波，并且识别所接收的RF波的特性。所接收的RF波的特性可以是RF波的强度，并且在第一示例中检测到衰减量。或者，所接收的RF波的特性可以是反射所发射的RF波并且用接收机接收它所需的时间，并且在该替代方案中测量RF波的发射与反射RF波的接收之间的时间间隔。

9. 发明授权

US09116173B2 Contact probe having carbon film on surface thereof 有权
标题翻译：在其表面具有碳膜的接触探针
公开(公告)号：US09116173B2
公开(公告)日：2015-08-25
申请号：US13697248
申请日：2011-05-10
申请人： Takayuki Hirano , Takashi Kobori
发明人： Takayuki Hirano , Takashi Kobori
IPC分类号： G01R31/00 , G01R1/067 , G01R35/00 , G01R3/00
CPC分类号： G01R1/06761 , G01R3/00 , G01R35/00
摘要： A contact probe includes a base material, a carbon film provided on a tip of the contact probe and configured to contact with an electrode, and an intermediate layer provided between the carbon film and the base material. The carbon film includes a metal element. A concentration of the metal element in the carbon film surface is lower than an average concentration of the metal element in a whole of the carbon film. The carbon film further includes: a plurality of layers, each of the plurality of layers having a uniform concentration of the metal element along a direction of a thickness of the carbon film; a layer in which the concentration of the metal element is continuously changed along a direction of a thickness of the carbon film; or both thereof.
摘要翻译：接触探针包括基材，设置在接触探针的尖端上并被配置为与电极接触的碳膜，以及设置在碳膜和基材之间的中间层。碳膜包括金属元素。碳膜表面中的金属元素的浓度低于整个碳膜中的金属元素的平均浓度。所述碳膜还包括多个层，所述多层中的每一层均具有沿所述碳膜的厚度方向的所述金属元素的均匀浓度; 金属元素的浓度沿着碳膜的厚度方向连续变化的层; 或其两者。

10. 发明申请

US20060175293A1 Semiconductor device and method for manufacturing multilayered substrate for semiconductor device 有权
标题翻译：半导体装置用多晶半导体装置及其制造方法
公开(公告)号：US20060175293A1
公开(公告)日：2006-08-10
申请号：US11328162
申请日：2006-01-10
申请人： Takeshi Tachibana , Kazushi Hayashi , Yoshihiro Yokota , Koji Kobashi , Takashi Kobori
发明人： Takeshi Tachibana , Kazushi Hayashi , Yoshihiro Yokota , Koji Kobashi , Takashi Kobori
IPC分类号： B44C1/22 , C23F1/00 , C03C15/00
CPC分类号： H01L21/022 , C23C16/01 , C23C16/274 , C23C16/278 , C23C16/56 , H01L21/02115 , H01L21/02123 , H01L21/0405 , H01L21/3146 , H01L21/76256 , H01L2221/68363
摘要： A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.
摘要翻译：提供一种半导体装置用多层基板的制造方法以及半导体装置，该多层基板具有优异的导热性和优异的散热效果，而不发生翘曲变形。通过CVD方法通过气相沉积在第一硅衬底的一个主表面上形成金刚石层。在该金刚石层上形成SiO 2层。通过热氧化法在第二硅衬底的表面上形成SiO 2层。金刚石层与设置在金刚石层和第二硅衬底之间的SiO 2层结合到第二硅衬底。通过蚀刻溶解去除第一硅衬底以暴露金刚石层的表面。通过CVD法在金刚石层上形成用作半导体层的硅层。

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