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1. 发明申请

US20050051930A1 Fine structure composite and drying method of fine structure using the same 审中-公开
标题翻译：精细结构复合和干燥方法的精细结构使用相同
公开(公告)号：US20050051930A1
公开(公告)日：2005-03-10
申请号：US10972672
申请日：2004-10-26
申请人： Nobuyuki Kawakami , Takashi Kobori , Toshihiro Kugimiya
发明人： Nobuyuki Kawakami , Takashi Kobori , Toshihiro Kugimiya
IPC分类号： C23C26/00 , B29C71/00 , B32B27/00 , B81C1/00 , H01L21/027
CPC分类号： B81C1/00928 , B81C1/00841 , B81C1/0092 , Y10T428/31855 , Y10T428/31928
摘要： The present invention provides a fine structure composite composed of a fine structure and a protection film formed thereon. The fine structure composite is used prior to a step of drying the fine structure in a high pressure chamber using a liquefied or a supercritical fluid, and the protection film is formed of a high viscosity material. When the fine structure such as a semiconductor substrate after development is dried using a liquefied or a supercritical fluid, the surface of the fine structure such as the substrate is prevented from being spontaneously dried, and as a result, a pattern on the surface is prevented from being collapsed.
摘要翻译：本发明提供由精细结构和形成在其上的保护膜构成的精细结构复合体。在使用液化或超临界流体的高压室中干燥精细结构的步骤之前使用精细结构复合材料，并且保护膜由高粘度材料形成。当使用液化或超临界流体干燥显影后的半导体基板等微细结构时，防止诸如基板的精细结构的表面自发干燥，结果，防止了表面上的图案从崩溃。

2. 发明授权

US07897025B2 Method and apparatus for forming thin film 有权
标题翻译：用于形成薄膜的方法和装置
公开(公告)号：US07897025B2
公开(公告)日：2011-03-01
申请号：US10973249
申请日：2004-10-27
申请人： Kenichi Inoue , Hiroyuki Takamatsu , Takashi Kobori , Kazushi Hayashi , Toshihiro Kugimiya
发明人： Kenichi Inoue , Hiroyuki Takamatsu , Takashi Kobori , Kazushi Hayashi , Toshihiro Kugimiya
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , C23C14/228 , C23C14/26 , H01J37/32009
摘要： A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like is suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.
摘要翻译：具有圆筒形周面的转子设置在其中引入载气的处理容器中，并且转子外周表面与基板的表面之间具有预定的间隙。包括成膜材料的原子分子和簇粒子的成膜颗粒通过溅射从成膜材料供给构件的表面散射，转子旋转以在转子周边表面附近形成载气流。成膜微粒通过载气流输送到基板的表面附近并粘附到基板的表面。结果，抑制高能粒子等的不利影响，通过蒸发或溅射法有效地形成令人满意的薄膜，对原料气体的限制较少，而不需要大型设备。

3. 发明申请

US20090098311A1 METHOD FOR FORMING THIN FILM 审中-公开
标题翻译：形成薄膜的方法
公开(公告)号：US20090098311A1
公开(公告)日：2009-04-16
申请号：US12331638
申请日：2008-12-10
申请人： Nobutaka AOMINE , Yuki Aoshima , Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori
发明人： Nobutaka AOMINE , Yuki Aoshima , Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori
IPC分类号： H05H1/46
CPC分类号： C23C16/505 , C23C16/40 , C23C16/54 , H01J37/32 , H01J37/32091 , H01J37/32568 , H01J37/32761
摘要： When a thin film is formed on a substrate by means of a plasma under a pressure atmosphere close to the atmospheric pressure, it is possible to control particles to be formed by a reaction of a reaction gas and to form a uniform thin film constantly, even when the space between an electrode and the substrate is set to be wider than a conventional method.An electric power is supplied to a cylindrical rotating electrode 12 whose rotational axis is parallel to a substrate, to generate a plasma in a space between this rotating electrode 12 and the substrate S, and a supplied reaction gas G is activated by means of the generated plasma to form a thin film on the substrate S, is wherein a high-frequency electric power having a frequency of from 100 kHz to 1 MHz is supplied to the rotating electrode 12.
摘要翻译：当在接近大气压的压力气氛下通过等离子体在基板上形成薄膜时，可以通过反应气体的反应来控制形成的颗粒，并且能够均匀地形成均匀的薄膜，甚至当电极和衬底之间的空间被设定为比常规方法宽时。向旋转轴平行于基板的圆筒状旋转电极12供给电力，在该旋转电极12与基板S之间的空间中产生等离子体，通过所产生的反应气体G 在衬底S上形成薄膜的等离子体，其中具有100kHz至1MHz频率的高频电力被提供给旋转电极12。

4. 发明授权

US07459187B2 Surface-treatment method and equipment 失效
标题翻译：表面处理方法和设备
公开(公告)号：US07459187B2
公开(公告)日：2008-12-02
申请号：US10577235
申请日：2004-10-27
申请人： Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori , Junichi Ebisawa , Kazuo Sato , Yukio Yoshikawa
发明人： Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori , Junichi Ebisawa , Kazuo Sato , Yukio Yoshikawa
IPC分类号： H05H1/24
CPC分类号： H01J37/32449 , C23C16/45589 , H01J37/3244 , H01L21/02164 , H01L21/02186 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/67017
摘要： An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).
摘要翻译：本发明的目的是使得可以以更简单和更低成本的方式将气体均匀地供应到基材上，从而实现高质量的表面处理。为此，通过在基材12的表面上沿特定方向供给表面处理气体来对基材12进行表面处理，转子的圆周表面具有圆筒形周面（24）经由间隙（23）面对，形成在与基材分离的位置处的基材（12）或相对构件（20）的表面，并且转子围绕轴线旋转作为供给表面处理气体的装置，几乎垂直于基材（12） - 输送方向的方向。通过旋转，表面处理气体被转子（24）的外周表面拖动，被引导到间隙（23）中，然后从间隙（23）进给到基体材料（12）的表面上）。

5. 发明申请

US20070134414A1 Surface-treatment method and equipment 失效
标题翻译：表面处理方法和设备
公开(公告)号：US20070134414A1
公开(公告)日：2007-06-14
申请号：US10577235
申请日：2004-10-27
申请人： Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori , Junichi Ebisawa , Kazuo Sato , Yukio Yoshikawa
发明人： Kazushi Hayashi , Toshihiro Kugimiya , Takashi Kobori , Junichi Ebisawa , Kazuo Sato , Yukio Yoshikawa
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32449 , C23C16/45589 , H01J37/3244 , H01L21/02164 , H01L21/02186 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/67017
摘要： An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).
摘要翻译：本发明的目的是使得可以以更简单和更低成本的方式将气体均匀地供应到基材上，从而实现高质量的表面处理。为此，通过在基材12的表面上沿特定方向供给表面处理气体来对基材12进行表面处理，转子的圆周表面具有圆筒形周面（24）经由间隙（23）面对，形成在与基材分离的位置处的基材（12）或相对构件（20）的表面，并且转子围绕轴线旋转作为供给表面处理气体的装置，几乎垂直于基材（12） - 输送方向的方向。通过旋转，表面处理气体被转子（24）的外周表面拖动，被引导到间隙（23）中，然后从间隙（23）进给到基体材料（12）的表面上）。

6. 发明申请

US20050136694A1 Method and apparatus for forming thin film 有权
标题翻译：用于形成薄膜的方法和装置
公开(公告)号：US20050136694A1
公开(公告)日：2005-06-23
申请号：US10973249
申请日：2004-10-27
申请人： Kenichi Inoue , Hiroyuki Takamatsu , Takashi Kobori , Kazushi Hayashi , Toshihiro Kugimiya
发明人： Kenichi Inoue , Hiroyuki Takamatsu , Takashi Kobori , Kazushi Hayashi , Toshihiro Kugimiya
IPC分类号： C23C14/34 , C23C14/24 , C23C14/26 , C23C14/35 , C23C16/00 , H01J37/32 , H01L21/203 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： C23C14/35 , C23C14/228 , C23C14/26 , H01J37/32009
摘要： A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. The rotor peripheral surface is also opposed to a film-forming material supplying member having a film-forming material on its surface at a position apart from the position where the rotor faces the substrate. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like can be suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.
摘要翻译：具有圆筒形周面的转子设置在其中引入载气的处理容器中，并且转子外周表面与基板的表面之间具有预定的间隙。转子外周表面也与在其表面上离开转子面向基板的位置的表面上的成膜材料供给构件相对。包括成膜材料的原子分子和簇粒子的成膜颗粒通过溅射从成膜材料供给构件的表面散射，转子旋转以在转子周边表面附近形成载气流。成膜微粒通过载气流输送到基板的表面附近并粘附到基板的表面。结果，可以抑制高能粒子等的不利影响，通过蒸发或溅射法有效地形成令人满意的薄膜，对原料气体的限制较少，而无需大型设备。

7. 发明授权

US07411298B2 Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权
标题翻译：源极/漏极，薄膜晶体管基板，其制造方法和显示装置
公开(公告)号：US07411298B2
公开(公告)日：2008-08-12
申请号：US11461907
申请日：2006-08-02
申请人： Nobuyuki Kawakami , Toshihiro Kugimiya , Hiroshi Gotoh , Katsufumi Tomihisa , Aya Hino
发明人： Nobuyuki Kawakami , Toshihiro Kugimiya , Hiroshi Gotoh , Katsufumi Tomihisa , Aya Hino
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要翻译：在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。源极/漏极包括含氮层和纯铝或铝合金薄膜。含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。

8. 发明申请

US20070040172A1 Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权
标题翻译：源极/漏极，薄膜晶体管基板，其制造方法和显示装置
公开(公告)号：US20070040172A1
公开(公告)日：2007-02-22
申请号：US11461907
申请日：2006-08-02
申请人： Nobuyuki Kawakami , Toshihiro Kugimiya , Hiroshi Gotoh , Katsufumi Tomihisa , Aya Hino
发明人： Nobuyuki Kawakami , Toshihiro Kugimiya , Hiroshi Gotoh , Katsufumi Tomihisa , Aya Hino
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要翻译：在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。源极/漏极包括含氮层和纯铝或铝合金薄膜。含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。

9. 发明授权

US10468535B2 Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor 有权
公开(公告)号：US10468535B2
公开(公告)日：2019-11-05
申请号：US13636255
申请日：2011-04-07
申请人： Shinya Morita , Toshihiro Kugimiya , Takeaki Maeda , Satoshi Yasuno , Yasuaki Terao , Aya Miki
发明人： Shinya Morita , Toshihiro Kugimiya , Takeaki Maeda , Satoshi Yasuno , Yasuaki Terao , Aya Miki
IPC分类号： C23C14/34 , H01L29/786 , H01L21/02 , C23C14/08
摘要： Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

10. 发明授权

US09212418B2 Al-Ni-La system Al-based alloy sputtering target 有权
标题翻译： Al-Ni-La系Al基合金溅射靶
公开(公告)号：US09212418B2
公开(公告)日：2015-12-15
申请号：US11931197
申请日：2007-10-31
申请人： Masaya Ehira , Katsutoshi Takagi , Toshihiro Kugimiya , Yoichiro Yoneda , Hiroshi Gotou
发明人： Masaya Ehira , Katsutoshi Takagi , Toshihiro Kugimiya , Yoichiro Yoneda , Hiroshi Gotou
IPC分类号： C23C14/34 , C23C4/08 , C23C4/12 , C22C21/00 , B22F9/08 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18 , H01J37/34
CPC分类号： C23C14/3414 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18 , B22F9/082 , B22F2998/10 , C22C21/00 , C23C4/08 , C23C4/123 , H01J37/3426 , H01J37/3429
摘要： The invention relates to an Al—Ni—La system Al-based alloy sputtering target where a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction.
摘要翻译：本发明涉及Al-Ni-La系Al基合金溅射靶，其中Al-Ni系金属间化合物的总面积相对于整个Al的总面积为0.3μm至3μm的平均粒径 -Ni系金属间化合物的面积率为70％以上，平均粒径为0.2μm〜2μm的Al-La系金属间化合物的总面积相对于Al的整个面积的总面积 -La系金属间化合物的面积分数为70％以上。

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