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1. 发明授权

US06239460B1 Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium 失效
公开(公告)号：US06239460B1
公开(公告)日：2001-05-29
申请号：US08671632
申请日：1996-06-28
申请人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
发明人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
IPC分类号： H01L27108
CPC分类号： H01L28/60 , H01L27/10852 , H01L28/55
摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.

2. 发明授权

US06420191B2 Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium 失效
标题翻译：制造半导体器件的方法，其包括具有由铱或钌形成的下电极的电容器
公开(公告)号：US06420191B2
公开(公告)日：2002-07-16
申请号：US09768552
申请日：2001-01-25
申请人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
发明人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
IPC分类号： H01G706
CPC分类号： H01L28/60 , H01L27/10852 , H01L28/55
摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.
摘要翻译：诸如包括电容器的DRAM的半导体器件，其中电容器的下电极是金属电极，金属电极主要由钌或铱组成，并且通过没有氧化物层的材料直接连接到电容器电介质膜金属电极形成在金属电极的表面上。与使用铂形成电极的常规情况相比，由铱或钌制成的下电极可以容易地被处理，并且当形成电容器电介质膜时也不能被氧化，因此可以防止电容的减小。

3. 发明授权

US6015989A Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen 失效
标题翻译：具有由虹膜或钌形成的电容器电极和一定量的氧的半导体器件
公开(公告)号：US6015989A
公开(公告)日：2000-01-18
申请号：US770510
申请日：1996-12-20
申请人： Tsuyosi Horikawa , Tetsuro Makita , Takeharu Kuroiwa , Noboru Mikami , Teruo Shibano
发明人： Tsuyosi Horikawa , Tetsuro Makita , Takeharu Kuroiwa , Noboru Mikami , Teruo Shibano
IPC分类号： H01L21/28 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L28/60
摘要： A semiconductor device includes a semiconductor substrate having a major surface; a first interlayer insulating film formed on the semiconductor substrate and having an opening defined therein so as to open at the major surface of the semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening; a lower capacitor electrode connected electrically with the major surface of the semiconductor substrate through the connecting member; a capacitor dielectric film formed on the lower capacitor electrode; an upper capacitor electrode formed on the capacitor dielectric film; and a second interlayer insulating film formed on the capacitor upper electrode. The lower capacitor electrode referred to above is made of a principal component selected from the group consisting of ruthenium and iridium and contains oxygen in a quantity of 0.001 to 0.1% by atom and/or at least one impurity element in a quantity of 0.1 to 5% by atom. The impurity element is selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum.
摘要翻译：半导体器件包括具有主表面的半导体衬底; 形成在所述半导体衬底上并具有限定在其中的开口以在所述半导体衬底的主表面上开口的第一层间绝缘膜; 以Si为主要成分并嵌入开口的连接件; 通过连接构件与半导体衬底的主表面电连接的下电容器电极; 形成在下电容器电极上的电容器电介质膜; 形成在电容器电介质膜上的上电容器电极; 以及形成在电容器上电极上的第二层间绝缘膜。上述下部电容器电极由选自钌和铱的主要成分制成，并且含有0.001至0.1原子％的氧和/或0.1至5的至少一种杂质元素按原子计。杂质元素选自钛，铬，钨，钴，钯和钼。

4. 发明授权

US5939744A Semiconductor device with x-ray absorption layer 失效
标题翻译：具有x射线吸收层的半导体器件
公开(公告)号：US5939744A
公开(公告)日：1999-08-17
申请号：US953559
申请日：1997-10-17
申请人： Tsuyoshi Horikawa , Yoshikazu Tsunemine , Takeharu Kuroiwa , Tetsuro Makita , Noboru Mikami
发明人： Tsuyoshi Horikawa , Yoshikazu Tsunemine , Takeharu Kuroiwa , Tetsuro Makita , Noboru Mikami
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1085 , H01L28/55
摘要： In a thin film capacitor of a random access memory including a lower electrode, a dielectric film and an upper electrode, generation of defects in the dielectric film is suppressed. In another way, impurity diffusion into the dielectric film is prevented. In still another way, lattice matching of the dielectric film and the electrodes is realized. Thus, a reduced dielectric constant of the capacitor is prevented, and a quality of the semiconductor device is increased.
摘要翻译：在包括下电极，电介质膜和上电极的随机存取存储器的薄膜电容器中，抑制了电介质膜中缺陷的产生。换句话说，阻止了杂质向电介质膜的扩散。另一方面，实现了电介质膜和电极的晶格匹配。因此，防止了电容器的介电常数降低，并且提高了半导体器件的质量。

5. 发明授权

US06187622B1 Semiconductor memory device and method for producing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06187622B1
公开(公告)日：2001-02-13
申请号：US09003515
申请日：1998-01-06
申请人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Noboru Mikami , Tetsuro Makita
发明人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Noboru Mikami , Tetsuro Makita
IPC分类号： H01L218242
CPC分类号： H01L28/40 , H01L27/10852 , H01L28/60
摘要： A semiconductor memory device achieves a high capacitance value even when the elements are made extremely small as the degree of integration is increased. A method of producing such a semiconductor memory maintains a high capacitance value while achieving increased integration. A semiconductor memory device includes adjacent capacitor lower electrodes which are separated by a width of 0.2 &mgr;m while the ratio of the capacitor lower electrode height to the separation width is 1, the capacitor upper electrode covers the capacitor insulation film, and steps generated in the separated portion of the capacitor lower electrodes are filled by the upper electrode material. A method of manufacturing produces a semiconductor memory device wherein the capacitor upper electrode is formed in plasma which includes etchable gas by chemical or physical action.
摘要翻译：即使当元件的集成度增加时，半导体存储器件也实现了高的电容值。制造这种半导体存储器的方法保持高的电容值，同时实现增加的集成。半导体存储器件包括相邻的电容器下电极，其间隔0.2μm的宽度，而电容器下电极高度与分离宽度的比率为1，电容器上电极覆盖电容器绝缘膜，并且分离的步骤电容器下电极的一部分由上电极材料填充。一种制造方法产生半导体存储器件，其中电容器上电极通过化学或物理作用形成包括可蚀刻气体的等离子体。

6. 发明授权

US6049103A Semiconductor capacitor 失效
标题翻译：半导体电容
公开(公告)号：US6049103A
公开(公告)日：2000-04-11
申请号：US620606
申请日：1996-03-22
申请人： Tsuyoshi Horikawa , Yoshikazu Tsunemine , Takeharu Kuroiwa , Tetsuro Makita , Noboru Mikami
发明人： Tsuyoshi Horikawa , Yoshikazu Tsunemine , Takeharu Kuroiwa , Tetsuro Makita , Noboru Mikami
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1085 , H01L28/55
摘要： A thin film capacitor structure of a random access memory includes plurality of capacitors formed on an interlayer insulating film. The capacitor structure includes a plurality of lower electrodes formed on the interlayer insulating film, a first dielectric film formed over the plurality of lower electrodes and portions of the interlayer insulating film between lower electrodes, a second dielectric film formed on the first dielectric film, and an upper electrode formed on the second dielectric layer. A silicon oxide film is formed at the step portions of the first dielectric film which result at the periphery of the lower electrodes to prevent leakage current between adjacent capacitors.
摘要翻译：随机存取存储器的薄膜电容器结构包括形成在层间绝缘膜上的多个电容器。电容器结构包括形成在层间绝缘膜上的多个下电极，形成在多个下电极上的第一电介质膜和下电极之间的层间绝缘膜的部分，形成在第一电介质膜上的第二电介质膜，以及形成在第二介电层上的上电极。在第一电介质膜的台阶部分形成氧化硅膜，导致下部电极的周围，以防止相邻电容器之间的漏电流。

7. 发明授权

US06344991B1 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US06344991B1
公开(公告)日：2002-02-05
申请号：US09741797
申请日：2000-12-22
申请人： Noboru Mikami , Takeharu Kuroiwa
发明人： Noboru Mikami , Takeharu Kuroiwa
IPC分类号： G11C1122
CPC分类号： G11C11/22 , G11C11/5657
摘要： The inventive nonvolatile semiconductor memory device, rewriting stored information with the quantity of charges of a dielectric material, comprises a ferroelectric film having a hysteresis characteristic in a dependency of an electric field density and an-electric field and a nonlinear element electrically connected with the ferroelectric film. In this nonlinear element, the quantity of increase of a positive electric flux density with respect to an electric field is small in a low field region and large in a high field region in a dependency of the electric flux density and the electric field. Thus, it is possible to obtain a nonvolatile semiconductor memory device capable of suppressing dispersion in coercive filed and preventing reduction of voltage resistance without increasing the chip area.
摘要翻译：本发明的非易失性半导体存储器件，用介电材料的电荷量重写存储的信息，包括依赖于电场密度和电场的滞后特性的铁电体膜和与铁电体电连接的非线性元件电影。在该非线性元件中，在电场密度和电场的依赖性方面，在低场区域中正电流密度的增加量相对于电场的增加量较大，高场区域的增大量较大。因此，可以获得能够抑制矫顽磁场中的分散并防止电阻降低而不增加芯片面积的非易失性半导体存储器件。

8. 发明授权

US6110291A Thin film forming apparatus using laser 失效
公开(公告)号：US6110291A
公开(公告)日：2000-08-29
申请号：US689313
申请日：1996-08-07
申请人： Kenyu Haruta , Koichi Ono , Hitoshi Wakata , Mutsumi Tsuda , Yoshio Saito , Keisuke Nanba , Kazuyoshi Kojima , Tetsuya Takami , Akihiro Suzuki , Tomohiro Sasagawa , Kenichi Kuroda , Toshiyuki Oishi , Yukihiko Wada , Akihiko Furukawa , Yasuji Matsui , Akimasa Yuki , Takaaki Kawahara , Hideki Yabe , Taisuke Furukawa , Kouji Kise , Noboru Mikami , Tsuyoshi Horikawa , Tetsuo Makita , Kazuo Kuramoto , Naohiko Fujino , Hiroshi Kuroki , Tetsuo Ogama , Junji Tanimura
发明人： Kenyu Haruta , Koichi Ono , Hitoshi Wakata , Mutsumi Tsuda , Yoshio Saito , Keisuke Nanba , Kazuyoshi Kojima , Tetsuya Takami , Akihiro Suzuki , Tomohiro Sasagawa , Kenichi Kuroda , Toshiyuki Oishi , Yukihiko Wada , Akihiko Furukawa , Yasuji Matsui , Akimasa Yuki , Takaaki Kawahara , Hideki Yabe , Taisuke Furukawa , Kouji Kise , Noboru Mikami , Tsuyoshi Horikawa , Tetsuo Makita , Kazuo Kuramoto , Naohiko Fujino , Hiroshi Kuroki , Tetsuo Ogama , Junji Tanimura
IPC分类号： C23C14/02 , C23C14/08 , C23C14/22 , C23C14/28 , C23C14/34 , C23C14/54 , C23C14/56 , C23C14/00
CPC分类号： C23C14/087 , C23C14/022 , C23C14/22 , C23C14/28 , C23C14/3471 , C23C14/54 , C23C14/541 , C23C14/547 , C23C14/564 , Y10S505/732
摘要： A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

9. 发明授权

US07847296B2 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US07847296B2
公开(公告)日：2010-12-07
申请号：US12066366
申请日：2006-04-24
申请人： Hiroshi Sugimoto , Yoshinori Matsuno , Kenichi Ohtsuka , Noboru Mikami , Kenichi Kuroda
发明人： Hiroshi Sugimoto , Yoshinori Matsuno , Kenichi Ohtsuka , Noboru Mikami , Kenichi Kuroda
IPC分类号： H01L29/15
CPC分类号： H01L29/8611 , H01L21/0445 , H01L29/045 , H01L29/0684 , H01L29/1608 , H01L29/6606
摘要： On a major surface of an n-type silicon carbide inclined substrate (2) is formed an n-type voltage-blocking layer (3) made of silicon carbide by means of epitaxial growth. On the n-type voltage-blocking layer (3) is formed a p-type silicon carbide region (4) rectangular when viewed from above. On the surface of the p-type silicon carbide region (4) is formed a p-type contact electrode (5). In the p-type silicon carbide region (4), the periphery of the p-type silicon carbide region (4) that is parallel with a (11-20) plane (14a) of the silicon carbide crystal, which is liable to cause avalanche breakdown, is located on the short side. In this manner, the dielectric strength of a silicon carbide semiconductor device can be improved.
摘要翻译：在n型碳化硅倾斜衬底（2）的主表面上通过外延生长形成由碳化硅制成的n型压阻层（3）。在从上方观察时，在n型电压阻挡层（3）上形成矩形的p型碳化硅区域（4）。在p型碳化硅区域（4）的表面上形成p型接触电极（5）。在p型碳化硅区域（4）中，与碳化硅晶体的（11-20）面（14a）平行的p型碳化硅区域（4）的周边易于引起雪崩破裂，位于短边。以这种方式，可以提高碳化硅半导体器件的介电强度。

10. 发明授权

US07029605B2 Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device 有权
公开(公告)号：US07029605B2
公开(公告)日：2006-04-18
申请号：US09942626
申请日：2001-08-31
申请人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
发明人： Sei Tsunoda , Hideharu Nobutoki , Noboru Mikami
IPC分类号： H01B3/00 , B32B9/04 , B32B27/28 , H01L21/31
CPC分类号： H01L21/02112 , H01L21/314 , H01L29/51 , H01L2924/0002 , Y10T428/31504 , Y10T428/31515 , H01L2924/00
摘要： There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

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