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1. 发明申请

US20110097823A1 APPARATUS FOR FORMING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR FILM 有权
标题翻译：用于形成薄膜的装置和制造半导体膜的方法
公开(公告)号：US20110097823A1
公开(公告)日：2011-04-28
申请号：US12994343
申请日：2009-05-14
申请人： Mutsumi Tsuda , Masakazu Taki
发明人： Mutsumi Tsuda , Masakazu Taki
IPC分类号： H01L21/66 , C23C16/455 , C23C16/458 , C23C16/503 , C23C16/52
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45523 , C23C16/515 , H01L21/02532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.
摘要翻译：一种包括具有保持基板的基板保持单元和面向基板的等离子体电极的真空室的设备，以恒定流量向真空室供给H2气体的第一气体供给单元，打开的第二气体供给单元或关闭阀门以接通或关闭向等离子体电极施加高频电压的高频电源的SiH 4气体的供给，连接到地面以围绕等离子体电极外部的屏蔽盒真空室和控制单元，其控制阀，使得SiH4气体周期性地供给到真空室，并且与阀的打开或关闭同步地调制高频功率的振幅，并且阀设置在屏蔽盒。

2. 发明申请

US20090035945A1 MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US20090035945A1
公开(公告)日：2009-02-05
申请号：US12180514
申请日：2008-07-25
申请人： Kazuyuki FUJII , Minoru Hanazaki , Gen Kawaharada , Masakazu Taki , Mutsumi Tsuda
发明人： Kazuyuki FUJII , Minoru Hanazaki , Gen Kawaharada , Masakazu Taki , Mutsumi Tsuda
IPC分类号： H01L21/30 , C25F5/00
CPC分类号： H01L21/67069 , C23C16/4405 , C23C16/52 , H01J37/32357 , H01J37/32862 , H01J37/32963
摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.
摘要翻译：在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。

3. 发明授权

US6110291A Thin film forming apparatus using laser 失效
公开(公告)号：US6110291A
公开(公告)日：2000-08-29
申请号：US689313
申请日：1996-08-07
申请人： Kenyu Haruta , Koichi Ono , Hitoshi Wakata , Mutsumi Tsuda , Yoshio Saito , Keisuke Nanba , Kazuyoshi Kojima , Tetsuya Takami , Akihiro Suzuki , Tomohiro Sasagawa , Kenichi Kuroda , Toshiyuki Oishi , Yukihiko Wada , Akihiko Furukawa , Yasuji Matsui , Akimasa Yuki , Takaaki Kawahara , Hideki Yabe , Taisuke Furukawa , Kouji Kise , Noboru Mikami , Tsuyoshi Horikawa , Tetsuo Makita , Kazuo Kuramoto , Naohiko Fujino , Hiroshi Kuroki , Tetsuo Ogama , Junji Tanimura
发明人： Kenyu Haruta , Koichi Ono , Hitoshi Wakata , Mutsumi Tsuda , Yoshio Saito , Keisuke Nanba , Kazuyoshi Kojima , Tetsuya Takami , Akihiro Suzuki , Tomohiro Sasagawa , Kenichi Kuroda , Toshiyuki Oishi , Yukihiko Wada , Akihiko Furukawa , Yasuji Matsui , Akimasa Yuki , Takaaki Kawahara , Hideki Yabe , Taisuke Furukawa , Kouji Kise , Noboru Mikami , Tsuyoshi Horikawa , Tetsuo Makita , Kazuo Kuramoto , Naohiko Fujino , Hiroshi Kuroki , Tetsuo Ogama , Junji Tanimura
IPC分类号： C23C14/02 , C23C14/08 , C23C14/22 , C23C14/28 , C23C14/34 , C23C14/54 , C23C14/56 , C23C14/00
CPC分类号： C23C14/087 , C23C14/022 , C23C14/22 , C23C14/28 , C23C14/3471 , C23C14/54 , C23C14/541 , C23C14/547 , C23C14/564 , Y10S505/732
摘要： A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

4. 发明授权

US5146138A Plasma processor 失效
标题翻译：等离子处理器
公开(公告)号：US5146138A
公开(公告)日：1992-09-08
申请号：US817650
申请日：1992-01-07
申请人： Hiroki Ootera , Mutsumi Tsuda
发明人： Hiroki Ootera , Mutsumi Tsuda
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32293 , H01J37/32192 , H01J37/32275 , H05H1/46
摘要： A plasma processor comprising a plasma generation portion in which a plasma is generated by electron cyclotron resonance, a source of a right hand polarized microwave and supplying it to the plasma generation portion, and a plasma reaction portion which accommodates a substrate to be processed with the plasma generated in the plasma generation portion. Owing to the production and supply of the right hand polarized microwaves, almost all of the microwaves injected into the plasma generation portion contribute to the generation of the plasma, to increase plasma density and raise processing speed.
摘要翻译：一种等离子体处理器，包括等离子体产生部分，其中通过电子回旋共振产生等离子体，右手偏振微波源并将其提供给等离子体产生部分，以及等离子体反应部分，其容纳待处理的基板在等离子体产生部分产生的等离子体。由于右手极化微波的生产和供应，注入等离子体产生部分的几乎所有微波有助于产生等离子体，从而提高等离子体密度并提高处理速度。

5. 发明授权

US5115167A Plasma processor 失效
公开(公告)号：US5115167A
公开(公告)日：1992-05-19
申请号：US333042
申请日：1989-04-04
申请人： Hiroki Ootera , Mutsumi Tsuda
发明人： Hiroki Ootera , Mutsumi Tsuda
IPC分类号： H01J37/32
CPC分类号： H01J37/32293 , H01J37/32192 , H01J37/32275
摘要： A plasma processor comprising a plasma generation portion in which a plasma is generated by electron cyclotron resonance, a source of a right hand polarized microwave and supplying it to the plasma generation portion, and a plasma reaction portion which accommodates a substrate to be processed with the plasma generated in the plasma generation portion. Owing to the production and supply of the right hand polarized microwaves, almost all of the microwaves injected into the plasma generation portion contribute to the generation of the plasma, to increase plasma density and raise processing speed.

6. 发明授权

US08053254B2 Apparatus for forming thin film and method of manufacturing semiconductor film 有权
标题翻译：用于形成薄膜的装置和制造半导体膜的方法
公开(公告)号：US08053254B2
公开(公告)日：2011-11-08
申请号：US12994343
申请日：2009-05-14
申请人： Mutsumi Tsuda , Masakazu Taki
发明人： Mutsumi Tsuda , Masakazu Taki
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45523 , C23C16/515 , H01L21/02532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.
摘要翻译：一种包括具有保持基板的基板保持单元和面向基板的等离子体电极的真空室的设备，以恒定流量向真空室供给H2气体的第一气体供给单元，打开的第二气体供给单元或关闭阀门以接通或关闭向等离子体电极施加高频电压的高频电源的SiH 4气体的供给，连接到地面以围绕等离子体电极外部的屏蔽盒真空室和控制单元，其控制阀，使得SiH4气体周期性地供给到真空室，并且与阀的打开或关闭同步地调制高频功率的振幅，并且阀设置在屏蔽盒。

7. 发明授权

US5760366A Thin film forming apparatus using laser and magnetic field 失效
标题翻译：使用激光和磁场的薄膜成形装置
公开(公告)号：US5760366A
公开(公告)日：1998-06-02
申请号：US699707
申请日：1996-08-07
申请人： Kenyu Haruta , Koichi Ono , Mutsumi Tsuda , Takaaki Kawahara , Taisuke Furukawa
发明人： Kenyu Haruta , Koichi Ono , Mutsumi Tsuda , Takaaki Kawahara , Taisuke Furukawa
IPC分类号： C23C14/02 , C23C14/08 , C23C14/22 , C23C14/28 , C23C14/34 , C23C14/54 , C23C14/56 , B23K26/00 , C23C14/35
CPC分类号： C23C14/087 , C23C14/022 , C23C14/22 , C23C14/28 , C23C14/3471 , C23C14/54 , C23C14/541 , C23C14/547 , C23C14/564 , Y10S505/732
摘要： A thin film forming apparatus using a laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting a laser beam to target 5, and a substrate holder (3). When the target is irradiated with a laser beam, a plume (15) is generated, and materials included in plume 15 are deposited on the surface of a substrate (2) held by the substrate holder (3). A magnetic field is generated to direct the plume. The magnetic field can be parallel to the surface of the substrate or in another embodiment a cusp magnetic field can be used (see FIG. 130).
摘要翻译：使用激光器的薄膜形成装置包括：室（1），放置在其中的靶（5），用于向目标5发射激光的激光源（10）和基板保持器（3）。当用激光束照射靶时，产生羽流（15），并且包含在羽流15中的材料沉积在由基板保持器（3）保持的基板（2）的表面上。产生磁场以引导羽流。磁场可以平行于衬底的表面，或者在另一个实施例中，可以使用尖点磁场（参见图130）。

8. 发明授权

US08474403B2 Apparatus for forming thin film and method of manufacturing semiconductor film 有权
标题翻译：用于形成薄膜的装置和制造半导体膜的方法
公开(公告)号：US08474403B2
公开(公告)日：2013-07-02
申请号：US13237001
申请日：2011-09-20
申请人： Mutsumi Tsuda , Masakazu Taki
发明人： Mutsumi Tsuda , Masakazu Taki
IPC分类号： C23C16/00
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45523 , C23C16/515 , H01L21/02532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.
摘要翻译：一种包括具有保持基板的基板保持单元和面向基板的等离子体电极的真空室的设备，以恒定流量向真空室供给H2气体的第一气体供给单元，打开的第二气体供给单元或关闭阀门以接通或关闭向等离子体电极施加高频电压的高频电源的SiH 4气体的供给，连接到地面以围绕等离子体电极外部的屏蔽盒真空室和控制单元，其控制阀，使得SiH4气体周期性地供给到真空室，并且与阀的打开或关闭同步地调制高频功率的振幅，并且阀设置在屏蔽盒。

9. 发明申请

US20120006262A1 APPARATUS FOR FORMING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR FILM 有权
标题翻译：用于形成薄膜的装置和制造半导体膜的方法
公开(公告)号：US20120006262A1
公开(公告)日：2012-01-12
申请号：US13237001
申请日：2011-09-20
申请人： Mutsumi TSUDA , Masakazu TAKI
发明人： Mutsumi TSUDA , Masakazu TAKI
IPC分类号： B05C11/10
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45523 , C23C16/515 , H01L21/02532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.
摘要翻译：一种包括具有保持基板的基板保持单元和面向基板的等离子体电极的真空室的设备，以恒定流量向真空室供给H2气体的第一气体供给单元，打开的第二气体供给单元或关闭阀门以接通或关闭向等离子体电极施加高频电压的高频电源的SiH 4气体的供给，连接到地面以围绕等离子体电极外部的屏蔽盒真空室和控制单元，其控制阀，使得SiH4气体周期性地供给到真空室，并且与阀的打开或关闭同步地调制高频功率的振幅，并且阀设置在屏蔽盒。

10. 发明授权

US07790478B2 Manufacturing method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US07790478B2
公开(公告)日：2010-09-07
申请号：US12180514
申请日：2008-07-25
申请人： Kazuyuki Fujii , Minoru Hanazaki , Gen Kawaharada , Masakazu Taki , Mutsumi Tsuda
发明人： Kazuyuki Fujii , Minoru Hanazaki , Gen Kawaharada , Masakazu Taki , Mutsumi Tsuda
IPC分类号： H01L21/66
CPC分类号： H01L21/67069 , C23C16/4405 , C23C16/52 , H01J37/32357 , H01J37/32862 , H01J37/32963
摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.
摘要翻译：在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。

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