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1. 发明授权

US08427866B2 Magnetic storage element and magnetic storage device 失效
标题翻译：磁存储元件和磁存储器件
公开(公告)号：US08427866B2
公开(公告)日：2013-04-23
申请号：US13397615
申请日：2012-02-15
申请人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa
发明人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa
IPC分类号： G11C11/14
CPC分类号： G11B5/66 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： There are provided magnetic storage elements capable of performing a high-reliability write operation by inhibiting erroneous reversal of data of the magnetic storage element put in a semi-selected state, and a magnetic storage device using this. A recording layer having an easy axis and a hard axis overlaps at least one of a first or second conductive layer at the entire region thereof in plan view. First endpoints of a first line segment along the easy axis and maximum in dimension overlapping the recording layer in plan view don't overlap the second conductive layer in plan view. At least one of second endpoints of a pair of endpoints of a second line segment passing through the middle point of the first line segment, orthogonal to the first line segment in plan view, and overlapping the recording layer in plan view doesn't overlap the first conductive layer in plan view.
摘要翻译：提供了能够通过抑制放置在半选择状态的磁存储元件的数据的错误反转来执行高可靠性写入操作的磁存储元件，以及使用该存储元件的磁存储器件。具有容易轴和硬轴的记录层在平面图中在其整个区域与第一或第二导电层中的至少一个重叠。在俯视图中沿着容易轴的第一线段的第一端点和与记录层重叠的尺寸的最大值在平面图中不与第二导电层重叠。穿过第一线段的中点的平面图中与第一线段正交并且在平面图中与记录层重叠的第二线段的一对端点中的至少一个端点不重叠第一导电层在平面图中。

2. 发明授权

US08362581B2 Magnetic memory element and magnetic memory device 失效
标题翻译：磁存储元件和磁存储器件
公开(公告)号：US08362581B2
公开(公告)日：2013-01-29
申请号：US13073552
申请日：2011-03-28
申请人： Takashi Takenaga , Taisuke Furukawa , Takeharu Kuroiwa
发明人： Takashi Takenaga , Taisuke Furukawa , Takeharu Kuroiwa
IPC分类号： H01L29/82 , G11C11/14
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01L27/0207 , H01L43/08
摘要： Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.
摘要翻译：磁存储元件包括通过外部磁场改变磁化方向的记录层，具有易于轴和硬轴交叉的容易轴，第一导电层在记录层的布局位置的易轴方向交叉方向上形成磁场，第二导电层在与第一导电层交叉的方向上延伸，并且在记录层的布置位置处在硬轴的交叉方向上形成磁场。记录层在第一导电层和第二导电层之间具有至少一部分。从第一和第二导电层和记录层被层叠的方向观察的平面状记录层相对于第一导电层的虚拟第一中心线位于侧面和位于另一侧的其它部分，沿着第一导电层从层叠方向观察。从层叠方向观察的部分的面积小于或等于其他部分的三分之一面积。

3. 发明申请

US20120126797A1 MAGNETIC POSITION DETECTION APPARATUS 有权
标题翻译：磁性位置检测装置
公开(公告)号：US20120126797A1
公开(公告)日：2012-05-24
申请号：US13085133
申请日：2011-04-12
申请人： Yuji KAWANO , Hiroshi KOBAYASHI , Kazuyasu NISHIKAWA , Taisuke FURUKAWA
发明人： Yuji KAWANO , Hiroshi KOBAYASHI , Kazuyasu NISHIKAWA , Taisuke FURUKAWA
IPC分类号： G01B7/30
CPC分类号： G01D5/147 , G01D5/2451
摘要： A magnetic position detection apparatus includes a substrate, a magnet, a bridge circuit including first through fourth magneto-electric converting elements formed on the substrate, and a detection circuit. A substrate surface is substantially perpendicular to a magnet magnetization direction. The second and third magneto-electric converting elements are, when viewed along the magnet magnetization direction, disposed to be on or in the vicinity of a straight line passing through a center point of a magnetic pole of the magnet and parallel to a straight line perpendicular to both the magnet magnetization direction and the magnetic mobile object. The first and fourth magneto-electric converting elements are disposed so that, when not opposed to the magnetic mobile object, a component of a substrate of a magnetic field to be applied thereto is substantially same as that of a magnetic field to be applied to the second and third magneto-electric converting elements.
摘要翻译：磁性位置检测装置包括基板，磁体，包括形成在基板上的第一至第四磁电转换元件的桥接电路和检测电路。基板表面基本上垂直于磁体磁化方向。第二和第三磁电转换元件当沿着磁化磁化方向观察时，被设置在通过磁体的磁极的中心点并平行于垂直于直线的直线的直线附近或附近磁化方向和磁性移动体。第一和第四磁电转换元件设置成当不与磁性移动体相对时，要施加到其上的磁场的基板的分量与施加到磁性移动体的磁场的分量基本相同第二和第三磁电转换元件。

4. 发明授权

US07773408B2 Nonvolatile memory device 失效
标题翻译：非易失性存储器件
公开(公告)号：US07773408B2
公开(公告)日：2010-08-10
申请号：US12085664
申请日：2006-11-17
申请人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
发明人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/155 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01L27/228
摘要： Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.
摘要翻译：铁磁层具有朝向彼此抵消的方向取向的磁化，使得铁磁层的净磁化基本上为零。也就是说，铁磁层与插入其间的非磁性层交换耦合，从而形成SAF结构。由于形成SAF结构的铁磁层的净磁化基本上为零，记录层的磁化由铁磁层的磁化决定。因此，铁磁层由具有高的单轴磁各向异性的CoFeB合金制成，铁磁层由具有高交换耦合力的CoFe合金制成。

5. 发明申请

US20080186635A1 MAGNETIC FIELD DETECTOR, AND CURRENT DETECTION DEVICE, POSITION DETECTION DEVICE AND ROTATION DETECTION DEVICES USING THE MAGNETIC FIELD DETECTOR 有权
标题翻译：磁场检测器和电流检测装置，位置检测装置和使用磁场检测器的旋转检测装置
公开(公告)号：US20080186635A1
公开(公告)日：2008-08-07
申请号：US12098291
申请日：2008-04-04
申请人： Takashi TAKENAGA , Hiroshi Kobayashi , Takeharu Kuroiwa , Sadeh Beysen , Taisuke Furukawa
发明人： Takashi TAKENAGA , Hiroshi Kobayashi , Takeharu Kuroiwa , Sadeh Beysen , Taisuke Furukawa
IPC分类号： G11B5/33
CPC分类号： G01R33/09 , B82Y25/00 , G01R15/205 , G01R33/093
摘要： A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.
摘要翻译：具有参考磁阻元件和磁场检测磁阻元件的磁场检测器。参考磁阻元件和磁场检测磁阻元件各自具有堆叠结构，其包括反铁磁层，铁磁材料的固定层，其具有由反铁磁层固定的磁化方向，非磁性层和铁磁性自由层具有适于由外部磁场改变的磁化方向的材料。参考磁阻元件使得固定层的磁化方向和非磁场中的自由层的磁化方向彼此平行或反平行，并且磁场检测磁阻元件使得磁化方向和非磁场中的自由层的磁化方向彼此不同。因此，可以提供能够在需要时单独地校准检测器的灵敏度和分辨率的磁场检测器。

6. 发明授权

US07375516B2 Magnetic field detector, current detector, position detector and rotation detector employing it 有权
标题翻译：磁场检测器，电流检测器，位置检测器和使用它的旋转检测器
公开(公告)号：US07375516B2
公开(公告)日：2008-05-20
申请号：US10589246
申请日：2004-09-22
申请人： Takashi Takenaga , Hiroshi Kobayashi , Takeharu Kuroiwa , Sadeh Beysen , Taisuke Furukawa
发明人： Takashi Takenaga , Hiroshi Kobayashi , Takeharu Kuroiwa , Sadeh Beysen , Taisuke Furukawa
IPC分类号： G01R33/09 , G01R33/05 , G01R33/02 , G01B7/30
CPC分类号： G01R33/09 , B82Y25/00 , G01R15/205 , G01R33/093
摘要： A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.
摘要翻译：具有参考磁阻元件和磁场检测磁阻元件的磁场检测器。参考磁阻元件和磁场检测磁阻元件各自具有堆叠结构，其包括反铁磁层，铁磁材料的固定层，其具有由反铁磁层固定的磁化方向，非磁性层和铁磁性层的自由层具有适于由外部磁场改变的磁化方向的材料。参考磁阻元件使得固定层的磁化方向和非磁场中的自由层的磁化方向彼此平行或反平行，并且磁场检测磁阻元件使得磁化方向和非磁场中的自由层的磁化方向彼此不同。因此，可以提供能够在需要时单独地校准检测器的灵敏度和分辨率的磁场检测器。

7. 发明申请

US20070047152A1 Magnetic field detection apparatus and method of adjusting the same 有权
标题翻译：磁场检测装置及其调整方法
公开(公告)号：US20070047152A1
公开(公告)日：2007-03-01
申请号：US11509609
申请日：2006-08-25
申请人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Sadeh Beysen , Masakazu Taki
发明人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Sadeh Beysen , Masakazu Taki
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G01R15/205
摘要： A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.
摘要翻译：公开了能够根据具体应用需要改变检测范围和检测灵敏度的磁场检测装置。磁阻效应元件施加偏置磁场和外部磁场。在相同的直线上产生偏置磁场和外部磁场，因此偏置磁场用于阻止施加到磁阻效应元件的外部磁场。因此，磁阻效应元件的自由层的磁化被抑制，并且磁化矢量的旋转角度减小。结果，磁阻效应元件对外部磁场的电阻值的特性偏移与偏置磁场相当的量。

8. 发明申请

US20120280677A1 MAGNETIC POSITION DETECTING DEVICE 有权
标题翻译：磁性位置检测装置
公开(公告)号：US20120280677A1
公开(公告)日：2012-11-08
申请号：US13519927
申请日：2010-12-14
申请人： Taisuke Furukawa , Koichi Akiyama , Takeharu Kuroiwa , Yuji Kawano , Hiroshi Kobayashi
发明人： Taisuke Furukawa , Koichi Akiyama , Takeharu Kuroiwa , Yuji Kawano , Hiroshi Kobayashi
IPC分类号： G01B7/14 , G01R33/00
CPC分类号： G01D5/147 , G01D5/145 , G01D5/24438 , G01R29/12 , G01R33/09
摘要： A magnetic position detecting device (10) includes a magnet (4); first to fourth magnetoelectric conversion elements (1A to 1D) formed on a virtual plane along a substrate (3); and a flux guide (5) made of a magnetic material. The flux guide (5) includes first and second protrusions (9B, 9A) provided at a distance from each other in the X-axis direction parallel to the virtual plane. As seen in the Z-axis direction perpendicular to the virtual plane, a center portion (MP) recessed in a concave shape is provided in the flux guide (5) in a mid-portion between the first and second protrusions. The first and fourth magnetoelectric conversion elements (1A to 1D) are provided approximately in the mid-portion between the first and second protrusions so as to cover a part of the center portion (MP) as seen in the Z-axis direction. The second magnetoelectric conversion element (1B) is provided between the first protrusion (9B) and the center portion (MP) as seen in the Z-axis direction. The second magnetoelectric conversion element (1B) is provided between the second protrusion (9A) and the center portion (MP) as seen in the Z-axis direction.
摘要翻译：磁性位置检测装置（10）包括磁体（4）; 沿着基板（3）形成在虚拟平面上的第一至第四磁电转换元件（1A至1D）; 和由磁性材料制成的磁通引导件（5）。磁通引导件（5）包括在平行于虚拟平面的X轴方向上彼此间隔设置的第一和第二突起（9B，9A）。从垂直于虚拟平面的Z轴方向看，在第一突起和第二突起之间的中间部分中的磁通引导件（5）中设置凹入凹部的中心部（MP）。第一和第四磁电转换元件（1A至1D）大致设置在第一和第二突起之间的中间部分中，以便覆盖中心部分（MP）的沿Z轴方向的一部分。第二磁电转换元件（1B）设置在从Z轴方向观察的第一突起（9B）和中心部（MP）之间。第二磁电转换元件（1B）设置在Z轴方向上的第二突起（9A）和中心部（MP）之间。

9. 发明申请

US20120251847A1 MAGNETIC STORAGE ELEMENT AND MAGNETIC STORAGE DEVICE 失效
标题翻译：磁存储元件和磁存储器件
公开(公告)号：US20120251847A1
公开(公告)日：2012-10-04
申请号：US13397615
申请日：2012-02-15
申请人： Takashi TAKENAGA , Takeharu KUROIWA , Taisuke FURUKAWA
发明人： Takashi TAKENAGA , Takeharu KUROIWA , Taisuke FURUKAWA
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： There are provided magnetic storage elements capable of performing a high-reliability write operation by inhibiting erroneous reversal of data of the magnetic storage element put in a semi-selected state, and a magnetic storage device using this. A recording layer having an easy axis and a hard axis overlaps at least one of a first or second conductive layer at the entire region thereof in plan view. First endpoints of a first line segment along the easy axis and maximum in dimension overlapping the recording layer in plan view don't overlap the second conductive layer in plan view. At least one of second endpoints of a pair of endpoints of a second line segment passing through the middle point of the first line segment, orthogonal to the first line segment in plan view, and overlapping the recording layer in plan view doesn't overlap the first conductive layer in plan view.
摘要翻译：提供了能够通过抑制放置在半选择状态的磁存储元件的数据的错误反转来执行高可靠性写入操作的磁存储元件，以及使用该存储元件的磁存储器件。具有容易轴和硬轴的记录层在平面图中在其整个区域与第一或第二导电层中的至少一个重叠。在俯视图中沿着容易轴的第一线段的第一端点和与记录层重叠的尺寸的最大值在平面图中不与第二导电层重叠。穿过第一线段的中点的平面图中与第一线段正交并且在平面图中与记录层重叠的第二线段的一对端点中的至少一个端点不重叠第一导电层在平面图中。

10. 发明授权

US07983075B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US07983075B2
公开(公告)日：2011-07-19
申请号：US12830954
申请日：2010-07-06
申请人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
发明人： Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/155 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01L27/228
摘要： Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.
摘要翻译：铁磁层具有朝向彼此抵消的方向取向的磁化，使得铁磁层的净磁化基本上为零。也就是说，铁磁层与插入其间的非磁性层交换耦合，从而形成SAF结构。由于形成SAF结构的铁磁层的净磁化基本上为零，记录层的磁化由铁磁层的磁化决定。因此，铁磁层由具有高的单轴磁各向异性的CoFeB合金制成，铁磁层由具有高交换耦合力的CoFe合金制成。

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