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1. 发明授权

US06733724B1 Hydrogen absorbing alloy and nickel-metal hydride rechargeable battery 失效
标题翻译：吸氢合金和镍氢二次电池
公开(公告)号：US06733724B1
公开(公告)日：2004-05-11
申请号：US09631491
申请日：2000-08-03
申请人： Takao Maeda , Satoshi Shima , Naofumi Shinya
发明人： Takao Maeda , Satoshi Shima , Naofumi Shinya
IPC分类号： C22C1903
CPC分类号： H01M4/385 , H01M4/383 , H01M10/345 , Y10S420/90
摘要： An object of the present invention is to provide a hydrogen absorbing alloy which can improve a high rate discharge property while suppressing particle size reduction, exhibits cycle life characteristics equal to or higher than those of conventional alloys even when its cobalt content is decreased, and has a high capacity. Specifically, the present invention provides a hydrogen absorbing alloy having a CaCu5 type crystal structure in its principal phase, wherein the La content in the alloy is in the range of 24 to 33% by weight and the Mg or Ca content in the alloy is in the range of 0.1 to 1.0% by weight, as well as the aforesaid alloy wherein the Co content in the alloy is not greater than 9% by weight.
摘要翻译：本发明的目的是提供一种吸氢合金，即使在其钴含量降低的同时，也能够抑制粒径的降低，同时具有等于或高于常规合金的循环寿命特性，并且具有高容量。具体地说，本发明提供一种在其主相中具有CaCu5型晶体结构的吸氢合金，其中合金中的La含量在24〜33重量％的范围内，合金中的Mg或Ca含量在 0.1〜1.0重量％的范围，以及合金中Co含量不大于9重量％的上述合金。

2. 发明授权

US07462407B2 Fluoride-containing coating and coated member 有权
标题翻译：含氟化合物涂层和涂层部件
公开(公告)号：US07462407B2
公开(公告)日：2008-12-09
申请号：US10737875
申请日：2003-12-18
申请人： Takao Maeda , Hajime Nakano , Satoshi Shima
发明人： Takao Maeda , Hajime Nakano , Satoshi Shima
IPC分类号： B32B9/00
CPC分类号： C23C30/00 , C23C4/04 , C23C24/04 , C23C30/005 , Y10T428/31678
摘要： A Group IIIA element fluoride-containing coating comprising a Group IIIA element fluoride phase which contains at least 50% of a crystalline phase of the orthorhombic system belonging to space group Pnma is formed on a member for imparting corrosion resistance so that the member may be used in a corrosive halogen species-containing atmosphere. When the state of a crystalline phase is properly controlled, the coating experiences only a little color change by corrosion. A Group IIIA element fluoride-containing coating having a micro-Vickers hardness Hv of at least 100 is minimized in weight loss by-corrosion.
摘要翻译：包含含有属于空间群Pnma的正交系的至少50％的结晶相的IIIA族元素氟化物相的IIIA族元素氟化物涂层形成在用于赋予耐腐蚀性的构件上，使得可以使用该构件在含卤素物质的腐蚀性气体中。当结晶相的状态被适当地控制时，涂层仅经受腐蚀的一点颜色变化。具有至少100的微维氏硬度Hv的IIIA族元素含氟化物涂层在减重腐蚀中被最小化。

3. 发明申请

US20050168908A1 Electrostatic chuck 有权
标题翻译：静电吸盘
公开(公告)号：US20050168908A1
公开(公告)日：2005-08-04
申请号：US11052229
申请日：2005-02-08
申请人： Takao Maeda , Satoshi Shima , Yuko Shima
发明人： Takao Maeda , Satoshi Shima , Yuko Shima
IPC分类号： C23C4/10 , B32B9/00 , H01B3/12 , H02H1/00
CPC分类号： H02H1/00 , C23C4/11 , C23C24/04
摘要： An electrostatic chuck is provided in which a lower oxide coating, an electrode, and an upper oxide coating are formed on a substrate. The lower oxide coating is formed by spraying an oxide of Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu and has a dielectric strength of 15-50 kV/mm.
摘要翻译：提供一种静电卡盘，其中在基板上形成较低的氧化物涂层，电极和上部氧化物涂层。通过喷射Gd，Tb，Dy，Ho，Er，Tm，Yb或Lu的氧化物形成低氧化物涂层，其介电强度为15-50kV / mm。

4. 发明授权

US08138060B2 Wafer 有权
标题翻译：晶圆
公开(公告)号：US08138060B2
公开(公告)日：2012-03-20
申请号：US12258850
申请日：2008-10-27
申请人： Toshihiko Tsukatani , Takao Maeda , Junichi Nakayama , Hirofumi Kawazoe , Masaru Konya , Noriaki Hamaya , Hajime Nakano
发明人： Toshihiko Tsukatani , Takao Maeda , Junichi Nakayama , Hirofumi Kawazoe , Masaru Konya , Noriaki Hamaya , Hajime Nakano
IPC分类号： B32B27/32 , B32B9/04 , B32B13/04 , B32B9/00 , B32B19/00
CPC分类号： C23C4/18 , C23C4/02 , C23C4/11 , C23C18/1216 , C23C24/04
摘要： A wafer has a rare earth oxide layer disposed, typically sprayed, on a substrate. It is useful as a dummy wafer in a plasma etching or deposition system.
摘要翻译：晶片具有通常喷涂在基板上的稀土氧化物层。作为等离子体蚀刻或沉积系统中的虚设晶片是有用的。

5. 发明授权

US07968205B2 Corrosion resistant multilayer member 有权
标题翻译：耐腐蚀多层构件
公开(公告)号：US07968205B2
公开(公告)日：2011-06-28
申请号：US11550929
申请日：2006-10-19
申请人： Hajime Nakano , Toshihiko Tsukatani , Takao Maeda
发明人： Hajime Nakano , Toshihiko Tsukatani , Takao Maeda
IPC分类号： B32B9/00
CPC分类号： C23C4/18 , C23C4/02 , C23C4/11 , C23C4/134 , C23C24/04 , H01J37/32477 , H01J37/32559
摘要： A corrosion resistant member to be exposed to a halogen-containing gas atmosphere or a halogen-containing gas plasma atmosphere, comprising a substrate and a plurality of layers deposited thereon including a layer of rare earth fluoride providing the outermost surface and a layer of rare earth oxide having a porosity of less than 5% underlying the rare earth fluoride layer.
摘要翻译：暴露于含卤素气体气氛或含卤素的气体等离子体气氛中的耐腐蚀构件，包括基材和沉积在其上的多层，其中包括提供最外表面的稀土氟化物层和稀土层具有低于稀土氟化物层下面5％孔隙率的氧化物。

6. 发明授权

US6144269A Noise-cut LC filter for power converter with overlapping aligned coil patterns 有权
标题翻译：用于功率转换器的噪声切割LC滤波器，具有重叠对齐的线圈图案
公开(公告)号：US6144269A
公开(公告)日：2000-11-07
申请号：US143215
申请日：1998-08-28
申请人： Kenji Okamoto , Shinji Uchida , Takao Maeda , Takashi Aihara , Yoshihiro Matsumoto , Naoto Fukasawa
发明人： Kenji Okamoto , Shinji Uchida , Takao Maeda , Takashi Aihara , Yoshihiro Matsumoto , Naoto Fukasawa
IPC分类号： H02M1/12 , H02M1/14 , H02M7/00 , H03H7/01
CPC分类号： H02M7/003 , H02M1/12 , H02M1/14 , H03H7/0115 , H03H2001/0085 , Y10T29/4902 , Y10T29/49073 , Y10T29/49078 , Y10T29/49165 , Y10T29/49169 , Y10T29/49171
摘要： A noise-cut filter having distributed inductances and distributed capacitances is provided wherein conductive spiral coil patterns are formed on the opposite surfaces of a dielectric sheet, such that the spiral coil patterns are aligned with each other in a direction perpendicular to the plane of the dielectric sheet, and a main circuit pattern is constructed by bonding a main circuit conductor to the spiral coil pattern formed on one of the opposite surfaces of the dielectric sheet. The main circuit conductor is formed by stamping with a punch press so that the conductor has a cross sectional area large enough to allow the passage of current of a main circuit, and has substantially the same shape as the spiral coil pattern. Further, a grounding wire is bonded to the spiral coil pattern formed on the other surface of the dielectric sheet, so that the grounding wire leads the current involving noises which flows from the main circuit pattern into the spiral coil pattern via the dielectric sheet, to a ground terminal.
摘要翻译：提供具有分布电感和分布电容的噪声截止滤波器，其中导电螺旋线圈图案形成在电介质片的相对表面上，使得螺旋线圈图案在垂直于电介质平面的方向上彼此对准并且通过将主电路导体接合到形成在电介质片的相对表面之一上的螺旋线圈图案来构成主电路图案。主电路导体通过冲压机冲压而形成，使得导体的横截面面积足够大以允许主电路的电流通过，并且具有与螺旋线圈图案基本相同的形状。此外，将接地线接合到形成在电介质片的另一表面上的螺旋线圈图案，使得接地线将导致从主电路图案流入螺旋线圈图案的噪声经由电介质片导向的电流引到一个地面终端。

7. 发明授权

US5455453A Plastic package type semiconductor device having a rolled metal substrate 失效
标题翻译：具有轧制金属基板的塑料封装型半导体器件
公开(公告)号：US5455453A
公开(公告)日：1995-10-03
申请号：US907229
申请日：1992-07-01
申请人： Keizo Harada , Takao Maeda , Takatoshi Takikawa , Shunsuke Ban , Shosaku Yamanaka
发明人： Keizo Harada , Takao Maeda , Takatoshi Takikawa , Shunsuke Ban , Shosaku Yamanaka
IPC分类号： H01L23/12 , H01L21/48 , H01L23/14 , H01L23/495 , H05K1/05 , H01L23/48 , H01L29/44 , H01L29/52 , H01L29/60
CPC分类号： H01L24/49 , H01L21/4835 , H01L23/142 , H01L23/49531 , H01L23/49558 , H01L23/49586 , H01L23/49589 , H01L2224/45139 , H01L2224/48091 , H01L2224/48227 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49113 , H01L2224/49433 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/19107 , H01L2924/351 , Y10S438/938
摘要： A plastic package type semiconductor device is composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element is mounted on the film or on the exposed surface of the substrate. Other passive elements are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding. This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.
摘要翻译：塑料封装型半导体器件由铜或铜合金制成的轧制金属衬底和形成在衬底表面上的绝缘膜组成。该膜可以是由氮氧化硅制成的单层膜或通过层叠氧化硅层和氮氧化硅层（或氮化硅层）而形成的复合膜。半导体元件安装在薄膜上或基板的暴露表面上。其他无源元件设置在胶片上。在将这些元件与接合线连接之后，整个器件被密封在树脂模塑中。因此，由于膜和基板之间的热膨胀差异，或者由于吸湿而剥离，因此该装置无裂纹。

8. 发明授权

US5369220A Wiring board having laminated wiring patterns 失效
标题翻译：具有叠层布线图案的布线板
公开(公告)号：US5369220A
公开(公告)日：1994-11-29
申请号：US949474
申请日：1992-10-23
申请人： Keizo Harada , Takatoshi Takikawa , Takao Maeda , Shunsuke Ban , Shosaku Yamanaka
发明人： Keizo Harada , Takatoshi Takikawa , Takao Maeda , Shunsuke Ban , Shosaku Yamanaka
IPC分类号： H01L23/14 , H01L23/495 , H01L23/498 , H05K1/05 , H01L39/02 , H01L23/48 , H01L29/46 , H01L29/62
CPC分类号： H05K1/053 , H01L23/142 , H01L23/49517 , H01L23/49531 , H01L23/49866 , H01L24/49 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4903 , H01L2224/49051 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/01327 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19107 , H05K2201/0179 , H05K2201/0317
摘要： A wiring board has a wiring circuit which is reliable and which can be easily miniaturized, and used for the production of a highly integrated, lighter, thinner, shorter, smaller and low-cost semiconductor device. This wiring board can be sealed in a plastic package. The wiring board has a metal plate and a thin-film dielectric layer formed on the surface of the metal plate. A semiconductor device is mounted on the surface of the dielectric layer or the exposed surface of the metal plate. Film wirings are formed on the dielectric layer. Each film wiring is in the form of a laminate formed by laminating, by vapor phase deposition or by plating, a an aluminum conductive layer, an adhesive layer of chromium, titanium or a laminate thereof, a diffusion barrier layer of nickel, copper or a laminate thereof, and a corrosion-preventive and wire bonding layer of gold. Such wirings may alternatively be in the form of a laminate formed by laminating an adhesive layer of chromium, aluminum, titanium or a laminate comprising at least two of such materials, a copper conductive layer, and a gold layer, or in the form of a laminate formed by laminating an aluminum conductive layer, a barrier layer of nickel, and a gold layer. Since the film wirings can be miniaturized easily, the density of the wirings can be increased. Also, since the wirings are made of aluminum or copper, they are inexpensive.
摘要翻译： PCT No.PCT / JP92 / 00198 Sec。 371日期：1992年10月23日 102（e）日期1992年10月23日PCT提交1992年2月24日PCT公布。公开号WO92 / 15117 日期：1992年9月3日。线路板具有可靠的并且可以容易地小型化的布线电路，并且用于生产高度集成，更轻，更薄，更短，更小和更低成本的半导体器件。该接线板可以用塑料封装密封。布线板具有形成在金属板表面上的金属板和薄膜电介质层。半导体器件安装在电介质层的表面或金属板的暴露表面上。在电介质层上形成膜布线。每个薄膜布线是通过气相沉积或电镀层压铝，导电层，铬，钛或其层压体的粘合剂层，镍，铜或铜的扩散阻挡层而形成的层压体层压板，以及金的防腐蚀和引线接合层。这种布线也可以是通过层压铬，铝，钛或包含这些材料中的至少两种的层压体，铜导电层和金层，或者以通过层叠铝导电层，镍的阻挡层和金层形成的层压体。由于薄膜布线可以容易地小型化，所以可以提高布线的密度。此外，由于布线由铝或铜制成，所以价格便宜。

9. 发明授权

US5306679A Heat conductive colored aluminum nitride sintered body 失效
标题翻译：导热色氮化铝烧结体
公开(公告)号：US5306679A
公开(公告)日：1994-04-26
申请号：US24820
申请日：1993-03-01
申请人： Kouhei Shimoda , Takao Maeda , Kouichi Sogabe , Masaya Miyake
发明人： Kouhei Shimoda , Takao Maeda , Kouichi Sogabe , Masaya Miyake
IPC分类号： C04B35/581 , H01L21/48 , C04B35/58
CPC分类号： C04B35/581 , H01L21/4807
摘要： A heat conductive aluminum nitride sintered body contains 100 parts by weight of aluminum nitride, at least 0.005 parts by weight and not more than 0.5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of at least one element selected from a group of compounds containing elements belonging to the groups IVB, VB and VIB of the periodic table in terms of the simple substance of the element. Such a sintered body has a heat conductivity of at least 100 W/m.multidot.K. and not more than 270 W/m.multidot.K. at room temperature.
摘要翻译：导热氮化铝烧结体含有100重量份的氮化铝，至少0.005重量份，不超过0.5重量份的碳，至少0.01重量份，不超过15重量份的稀有金属以稀土元素的单质为基准的至少0.01重量份至少15重量份的选自包含属于IVB族，VB族的元素的化合物的族中的至少一种元素和元素周期表的VIB。这种烧结体的导热率至少为100W / m×K。不超过270 W / m * K。在室温下。

10. 发明授权

US5294388A Heat conductive colored aluminum nitride sintered body and method of preparing the same 失效
标题翻译：导热色氮化铝烧结体及其制备方法
公开(公告)号：US5294388A
公开(公告)日：1994-03-15
申请号：US922682
申请日：1992-07-29
申请人： Kouhei Shimoda , Takao Maeda , Kouichi Sogahe , Masaya Miyake
发明人： Kouhei Shimoda , Takao Maeda , Kouichi Sogahe , Masaya Miyake
IPC分类号： C04B35/581 , H01L21/48 , F27B9/04 , C04B35/58
CPC分类号： C04B35/581 , H01L21/4807
摘要： A heat conductive aluminum nitride sintered body contains 100 parts by weight of aluminum nitride, at least 0.005 parts by weight and not more than 0.5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of at least one element selected from a group of compounds containing elements belonging to the groups IVB, VB and VIB of the periodic table in terms of the simple substance of the element. Heat conductivity of the aluminum nitride sintered body is at least 100 W/m.multidot.K and not more than 270 W/m.multidot.K at the ordinary temperature. According to a method of preparing such an aluminum nitride sintered body, at least 0.01 parts by weight and not more than 5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of an oxide of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of an oxide, a carbide or a nitride of an element belonging to the group IVB, VB or VIB of the periodic table are added to 100 parts by weight of aluminum nitride. A compact of this mixture is fired in a nonoxidizing atmosphere under a temperature of at least 1500.degree. C. and not more than 2100.degree. C.
摘要翻译：导热氮化铝烧结体含有100重量份的氮化铝，至少0.005重量份，不超过0.5重量份的碳，至少0.01重量份，不超过15重量份的稀有金属以稀土元素的单质为基准的至少0.01重量份至少15重量份的选自包含属于IVB族，VB族的元素的化合物的族中的至少一种元素和元素周期表的VIB。氮化铝烧结体的导热率在常温下为至少100W / m×K且不大于270W / m×K。根据制备这种氮化铝烧结体的方法，至少0.01重量份且不超过5重量份的碳，至少0.01重量份且不超过15重量份的稀有氧化物并且将至少0.01重量份且不超过15重量份的元素周期表中IVB族，VB族或VIB族元素的氧化物，碳化物或氮化物加入到100重量份的氮化铝。将该混合物的压块在至少1500℃且不超过2100℃的温度下在非氧化气氛中焙烧。

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