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1. 发明申请

US20060098477A1 Magnetic random access memory 有权
公开(公告)号：US20060098477A1
公开(公告)日：2006-05-11
申请号：US10523198
申请日：2003-07-28
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Hisao Matsutera , Atsushi Kamijo , Kenichi Shimura
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Hisao Matsutera , Atsushi Kamijo , Kenichi Shimura
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic random access memory is composed of a plurality of first signal lines provided to extend in a first direction, a plurality of second signal lines provided to extend in a second direction substantially perpendicular to the first direction, a plurality of memory cells respectively provided at the intersections of the plurality of first signal lines and the plurality of second signal lines, and a plurality of magnetic structures respectively provided to the plurality of memory cells. Each of the plurality of memory cells has a magneto-resistance element containing a spontaneous magnetization layer which has a first threshold function, and the direction of the spontaneous magnetization of the spontaneous magnetization layer is reversed when an element applied magnetic field having the intensity equal to or larger than a first threshold function value is applied. Each of the plurality of magnetic structures has a second threshold function, and generates a magnetic structure magnetic field in response to a structure-applied magnetic field. When the structure-applied magnetic field has the intensity equal to or larger than the second threshold function value, a third magnetic field is generated as the magnetic structure magnetic field. When the structure applied magnetic field has the intensity less than the second threshold function value, a fourth magnetic field is generated which is weaker than the third magnetic field as the magnetic structure magnetic field. A first write current supplied to one of the plurality of first signal lines as a first selected signal line, and a first magnetic field is generated. A second write current is supplied to one of the plurality of second signal lines as a second selected signal line, and a second magnetic field is generated. A first synthetic magnetic field of the first magnetic field and the second magnetic field is applied to the magnetic structure as the structure applied magnetic field. The element applied magnetic field having the intensity equal to or larger than the first threshold function value is applied to the selected memory cell provided at the intersection of the first selected signal line and the second selected signal line. A second synthetic magnetic field of the first synthetic magnetic field and the magnetic structure magnetic field is generated as the element applied magnetic field such that the element applied magnetic field having the intensity less than the first threshold function value is applied to each of non-selected memory cells other than the selected memory cell.

2. 发明授权

US07099184B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US07099184B2
公开(公告)日：2006-08-29
申请号：US10523198
申请日：2003-07-28
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Hisao Matsutera , Atsushi Kamijo , Kenichi Shimura , Kaoru Mori
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Hisao Matsutera , Atsushi Kamijo , Kenichi Shimura , Kaoru Mori
IPC分类号： G11C11/00 , G11C17/00
CPC分类号： G11C11/16
摘要： An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.
摘要翻译：改进的磁随机存取存储器（MRAM）具有两组信号线，每组信号线基本上垂直于另一组信号线，存储器单元位于信号线的交点处。每个存储单元具有包含磁化层的磁阻元件，该磁化层的磁特性根据施加的磁场的强度而变化。可以通过向与该单元相交的信号线提供适当的写入电流而将期望的磁场施加到任何单元。公开了施加的磁场，两个不同阈值函数值之间的关系，以及在每个单元处产生的四个不同的磁场。更好的性能，即提高选择性和更稳定的写入操作，结果。

3. 发明授权

US08477528B2 Magnetic memory cell and magnetic random access memory 有权
标题翻译：磁存储单元和磁性随机存取存储器
公开(公告)号：US08477528B2
公开(公告)日：2013-07-02
申请号：US12443349
申请日：2007-09-25
申请人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi , Hideaki Numata , Norikazu Ohshima
发明人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.
摘要翻译：磁存储单元1设置有磁记录层10，磁记录层10是铁磁层，和通过非磁性层20与磁记录层10连接的钉扎层30.磁记录层10具有磁化反转区域13，第一磁化固定区域11和第二磁化固定区域12.磁化反转区域13具有其取向可反转并与被钉扎层30重叠的磁化。第一磁化固定区域11与磁化反转中的第一边界B1连接区域13和磁化取向在第一方向固定。第二磁化固定区域12与磁化反转区域13中的第二边界B2连接，并且磁化取向固定在第二方向上。第一方向和第二方向彼此相反。

4. 发明授权

US07916520B2 Memory cell and magnetic random access memory 有权
标题翻译：存储单元和磁性随机存取存储器
公开(公告)号：US07916520B2
公开(公告)日：2011-03-29
申请号：US11574121
申请日：2005-08-19
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Tetsuhiro Suzuki
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Tetsuhiro Suzuki
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/15 , H01L43/08 , Y10S977/935
摘要： A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.
摘要翻译：使用包括多个磁阻元件和多个叠层铁磁结构物质的存储单元。多个磁阻元件对应于在第一方向上延伸的多个第一布线与基本上垂直于第一方向的第二方向延伸的多个第二布线相对应的相应位置放置。多个叠层铁氧体结构物质分别对应于多个磁阻元件，放置成距离相应的多个磁阻元件具有预定范围的距离，并具有叠层铁磁结构。磁阻元件包括层叠的铁磁结构，固定层和插入在自由层和固定层之间的非磁性层的自由层。

5. 发明授权

US07885131B2 Resistance change semiconductor memory device and method of reading data with a first and second switch circuit 有权
标题翻译：电阻变化半导体存储器件以及利用第一和第二开关电路读取数据的方法
公开(公告)号：US07885131B2
公开(公告)日：2011-02-08
申请号：US11815325
申请日：2006-02-01
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C7/02
CPC分类号： G11C11/16 , G11C7/02 , G11C7/062 , G11C7/14 , G11C11/4091 , G11C11/4099 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A semiconductor memory device of the present invention comprises a memory array and a read circuit that reads data of a selected cell. The memory array includes a plurality of memory cells and a reference cell each having a memory element that stores data based on change in resistance value. The read circuit includes: a voltage comparison unit that compares a value corresponding to a sense current from the selected cell with a value corresponding to a reference current from the reference cell; a first switch; and a second switch. Both of the first and second switches are provided at a subsequent stage of a decoder and at a preceding stage of the voltage comparison unit. The second switch circuit controls input of the value corresponding to the sense current to the voltage comparison unit, while the first switch circuit controls input of the value corresponding to the reference current to the voltage comparison unit.
摘要翻译：本发明的半导体存储器件包括存储器阵列和读取所选择的单元的数据的读取电路。存储器阵列包括多个存储器单元和参考单元，每个存储器单元具有存储元件，该存储元件基于电阻值的变化存储数据。读取电路包括：电压比较单元，将来自所选择的单元的检测电流的值与来自参考单元的参考电流对应的值进行比较; 第一个开关和第二开关。第一和第二开关都被提供在解码器的后续阶段，并且在电压比较单元的前一级提供。第二开关电路将对应于感测电流的值的输入控制到电压比较单元，而第一开关电路将对应于参考电流的值的输入控制到电压比较单元。

6. 发明授权

US07885095B2 Magnetic random access memory and operation method of the same 有权
标题翻译：磁性随机存取存储器及其操作方法相同
公开(公告)号：US07885095B2
公开(公告)日：2011-02-08
申请号：US12303821
申请日：2007-06-01
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C11/00 , C11C11/14
CPC分类号： G11C11/1673 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A magnetic random access memory of the present invention includes: a plurality of first wirings and a plurality of second wirings extending in a first direction; a plurality of third wirings and a plurality of fourth wirings extending in a second direction; and a plurality of memory cells provided at intersections of the plurality of first wirings and the plurality of third wirings, respectively. Each of the plurality of memory cells includes: a first transistor and a second transistor connected in series between one of the plurality of first wirings and one of the plurality of second wirings and controlled in response to a signal on one of the plurality of third wirings, a first magnetic resistance element having one end connected to a write wiring through which the first transistor and the second transistor are connected, and the other end grounded; and a second magnetic resistance element having one end connected to the write wiring, and the other end connected to the fourth wiring.
摘要翻译：本发明的磁性随机存取存储器包括：沿第一方向延伸的多个第一布线和多条第二布线; 多个第三布线和沿第二方向延伸的多个第四布线; 以及多个存储单元，分别设置在所述多个第一布线和所述多个第三布线的交点处。所述多个存储单元中的每一个包括：第一晶体管和第二晶体管，其串联连接在所述多个第一布线中的一个与所述多个第二布线中的一个之间，并响应于所述多个第三布线之一上的信号而被控制第一磁阻元件，其一端连接到第一晶体管和第二晶体管连接的写入布线，另一端接地; 以及第二磁阻元件，其一端连接到写入布线，另一端连接到第四布线。

7. 发明授权

US07764552B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US07764552B2
公开(公告)日：2010-07-27
申请号：US12085158
申请日：2006-11-07
申请人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi
发明人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C11/1675 , G11C11/1693 , G11C11/1697 , Y10T307/826
摘要： A semiconductor integrated circuit is provided that can prevent an internal voltage from the voltage generating circuit from varying during a long term. The semiconductor integrated circuit of the present invention includes a voltage generating circuit configured to generate a reference voltage; a function circuit configured to operate by using the reference voltage; a first capacitance connected to a first node between the voltage generating circuit and the function circuit; and a switch provided between the voltage generating circuit and the first node. The switch is in a turned-off state at least for a period during which the function circuit is in an activated state.
摘要翻译：提供一种可以防止来自电压产生电路的内部电压在长期内变化的半导体集成电路。本发明的半导体集成电路包括：电压产生电路，被配置为产生参考电压; 功能电路，被配置为通过使用所述参考电压进行操作; 连接到所述电压产生电路和所述功能电路之间的第一节点的第一电容; 以及设置在电压产生电路和第一节点之间的开关。至少在功能电路处于激活状态的期间，开关处于截止状态。

8. 发明申请

US20090262571A1 Magnetic random access memory and operating method of magnetic random access memory 有权
标题翻译：磁随机存取存储器和磁随机存取存储器的操作方法
公开(公告)号：US20090262571A1
公开(公告)日：2009-10-22
申请号：US12308062
申请日：2007-06-01
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C11/00 , G11C11/14 , G11C11/416
CPC分类号： G11C11/1659 , G11C11/1655 , G11C11/1675
摘要： A magnetic random access memory includes: a first and second wirings, a plurality of third wirings, a plurality of memory cells and a terminating unit. The first and second wirings extend in a Y direction. The plurality of third wirings extends in an X direction. The memory cell is provided correspondingly to an intersection between the first and second wirings and the third wiring. The terminating unit is provided between the plurality of memory cells and connected to the first and second wirings. The memory cell includes transistors and a magnetoresistive element. The transistors are connected in series between the first and second wirings and controlled based on a signal of the third wiring. The magnetoresistive element is connected to a wiring through which the transistors are connected. At a time of a writing operation, when the write current Iw is supplied from one of the first and second wiring to the other through the transistors, the terminating unit grounds the other.
摘要翻译：磁性随机存取存储器包括：第一和第二布线，多个第三布线，多个存储单元和终端单元。第一和第二布线沿Y方向延伸。多个第三配线沿X方向延伸。对应于第一和第二布线和第三布线之间的交叉点设置存储单元。终端单元设置在多个存储单元之间并连接到第一和第二布线。存储单元包括晶体管和磁阻元件。晶体管串联连接在第一和第二布线之间，并根据第三布线的信号进行控制。磁阻元件连接到晶体管连接到的布线。在写入操作时，当写入电流Iw通过晶体管从第一和第二布线中的一个提供给另一个时，端接单元接地。

9. 发明申请

US20060158945A1 Readout circuit for semiconductor storage device 有权
标题翻译：半导体存储装置读出电路
公开(公告)号：US20060158945A1
公开(公告)日：2006-07-20
申请号：US11384920
申请日：2006-03-20
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C7/00
CPC分类号： G11C13/004 , G11C7/06 , G11C11/16 , G11C11/1673 , G11C13/0061 , G11C2013/0047 , G11C2013/0054 , G11C2013/0057 , G11C2207/066
摘要： By first readout, the current input from a selected cell 13 is converted by a preamplifier 3 and a VCO 4 into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter 5 so as to be stored in a readout value register 6. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register 7 to one another. By the use of the VCO, the integrating capacitor for the current or reference pulse generating means, so far needed, may be eliminated to assure a small area, low power consumption and fast readout.
摘要翻译：通过第一读出，来自所选单元13的当前输入由前置放大器3和VCO4转换为与当前值成反比的频率的脉冲，并且预设时间间隔内的脉冲数由计数器计数以便存储在读出值寄存器6中。然后将选定的单元写入两个存储状态之一，然后执行第二次读出。通过将存储在读出值寄存器中的第一次读出的计数值和存储在参考值寄存器7中的参考值彼此进行比较来验证所选单元的存储状态。通过使用VCO，可以消除目前需要的电流或参考脉冲发生装置的积分电容器，以确保小面积，低功耗和快速读出。

10. 发明授权

US06990015B2 Semiconductor memory device using tunneling magnetoresistive elements 有权
标题翻译：使用隧道磁阻元件的半导体存储器件
公开(公告)号：US06990015B2
公开(公告)日：2006-01-24
申请号：US10329463
申请日：2002-12-27
申请人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi
发明人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi
IPC分类号： G11C11/15
CPC分类号： B82Y25/00 , G11C11/16
摘要： A semiconductor memory device which uses tunneling magnetoresistive element as memory cells and eliminates the temperature dependencies in a write margin and read margin in such a way as to be able to accurately output a write current at the time of writing the memory cells. The semiconductor memory device is constructed in such a way that main bit lines or main word lines are laid out so as to cross bit lines or word lines perpendicularly, and a main bit line selector or a main word line selector which respectively selects the main bit line or the main word line is arranged outside a memory cell array.
摘要翻译：一种半导体存储器件，其使用隧道磁阻元件作为存储器单元，并且以这样的方式消除写入裕度和读取裕度中的温度依赖性，使得能够在写入存储器单元时精确地输出写入电流。半导体存储器件被构造成使得主位线或主字线布置成垂直于位线或字线交叉，主位线选择器或主字选择器分别选择主位线或主字线布置在存储单元阵列的外部。

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