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1. 发明申请

US20080089117A1 Memory Cell and Magnetic Random Access Memory 有权
标题翻译：存储单元和磁性随机存取存储器
公开(公告)号：US20080089117A1
公开(公告)日：2008-04-17
申请号：US11574121
申请日：2005-08-19
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Tetsuhiro Suzuki
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Tetsuhiro Suzuki
IPC分类号： G11C11/00 , G11C11/02 , G11C11/14
CPC分类号： H01L27/228 , G11C11/15 , H01L43/08 , Y10S977/935
摘要： A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.
摘要翻译：使用包括多个磁阻元件和多个叠层铁磁结构物质的存储单元。多个磁阻元件对应于在第一方向上延伸的多个第一布线与基本上垂直于第一方向的第二方向延伸的多个第二布线相对应的相应位置放置。多个叠层铁氧体结构物质分别对应于多个磁阻元件，放置成距离相应的多个磁阻元件具有预定范围的距离，并具有叠层铁磁结构。磁阻元件包括层叠的铁磁结构，固定层和插入在自由层和固定层之间的非磁性层的自由层。

2. 发明授权

US07916520B2 Memory cell and magnetic random access memory 有权
标题翻译：存储单元和磁性随机存取存储器
公开(公告)号：US07916520B2
公开(公告)日：2011-03-29
申请号：US11574121
申请日：2005-08-19
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Tetsuhiro Suzuki
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Tetsuhiro Suzuki
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/15 , H01L43/08 , Y10S977/935
摘要： A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.
摘要翻译：使用包括多个磁阻元件和多个叠层铁磁结构物质的存储单元。多个磁阻元件对应于在第一方向上延伸的多个第一布线与基本上垂直于第一方向的第二方向延伸的多个第二布线相对应的相应位置放置。多个叠层铁氧体结构物质分别对应于多个磁阻元件，放置成距离相应的多个磁阻元件具有预定范围的距离，并具有叠层铁磁结构。磁阻元件包括层叠的铁磁结构，固定层和插入在自由层和固定层之间的非磁性层的自由层。

3. 发明授权

US07948783B2 MRAM 有权
公开(公告)号：US07948783B2
公开(公告)日：2011-05-24
申请号：US12515898
申请日：2007-11-12
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Nobuyuki Ishiwata , Shuichi Tahara
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Nobuyuki Ishiwata , Shuichi Tahara
IPC分类号： G11C15/02
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： An MRAM comprises: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application section. The magnetic field application section applies an offset adjustment magnetic field in a certain direction to the plurality of magnetic memory cells from outside the plurality of magnetic memory cells. Respective data stored in the plurality of magnetic memory cells become the same when the offset adjustment magnetic field is removed.
摘要翻译： MRAM包括：多个具有磁阻元件的磁存储单元; 和磁场施加部。磁场施加部从多个磁存储单元的外部向多个磁存储单元施加一定方向的偏移调整磁场。当去除偏移调整磁场时，存储在多个磁存储单元中的各个数据变得相同。

4. 发明授权

US07813164B2 Magneto resistance element and magnetic random access memory 有权
标题翻译：磁阻元件和磁性随机存取存储器
公开(公告)号：US07813164B2
公开(公告)日：2010-10-12
申请号：US11661205
申请日：2005-08-26
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/228 , H01L43/08
摘要： A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.
摘要翻译：磁阻元件包括位于自由层和固定层之间的自由层，固定层和非磁性层。自由层具有第一磁性层，第二磁性层，第三磁性层，介于第一磁性层和第二磁性层之间的第一非磁性层，以及介于第二磁性层之间的第二非磁性层和第三磁性层。第一磁性层，第二磁性层和第三磁性层被耦合，使得自发磁化具有螺旋结构。

5. 发明申请

US20090296454A1 MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁记忆体和磁性随机存取存储器
公开(公告)号：US20090296454A1
公开(公告)日：2009-12-03
申请号：US12443349
申请日：2007-09-25
申请人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi , Hideaki Numata , Norikazu Ohshima
发明人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/00 , G11C11/15 , G11C7/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.
摘要翻译：磁存储单元1设置有磁记录层10，磁记录层10是铁磁层，和通过非磁性层20与磁记录层10连接的钉扎层30.磁记录层10具有磁化反转区域13，第一磁化固定区域11和第二磁化固定区域12.磁化反转区域13具有其取向可反转并与被钉扎层30重叠的磁化。第一磁化固定区域11与磁化反转中的第一边界B1连接区域13和磁化取向在第一方向固定。第二磁化固定区域12与磁化反转区域13中的第二边界B2连接，并且磁化取向固定在第二方向上。第一方向和第二方向彼此相反。

6. 发明授权

US07184301B2 Magnetic memory cell and magnetic random access memory using the same 有权
标题翻译：磁存储单元和磁性随机存取存储器使用相同
公开(公告)号：US07184301B2
公开(公告)日：2007-02-27
申请号：US10702655
申请日：2003-11-07
申请人： Tadahiko Sugibayashi , Noboru Sakimura , Takeshi Honda
发明人： Tadahiko Sugibayashi , Noboru Sakimura , Takeshi Honda
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C2213/74 , G11C2213/79
摘要： In a magnetic random access memory, a memory cell includes a magnetic field generating section having an extension wiring line, and connected with a first selected bit line, a conductive pattern, and a magnetic resistance element having a spontaneous magnetization, storing a data and connected between the extension wiring line and the conductive pattern. In a data write operation into the memory cell, a write data is written in the magnetic resistance element of the memory cell by a write electric current which flows through the extension wiring line of the magnetic field generating section of the memory cell, and a value of the write data is determined based on a direction of the write electric current. In a data read operation from the memory cell, a read electric current flows through the extension wiring line of the magnetic field generating section and the magnetic resistance element in the memory cell. A memory cell array section includes the memory cells arranged in a matrix, and each memory cell is connected with a first word line and a first bit line at least, the gate section.
摘要翻译：在磁性随机存取存储器中，存储单元包括具有扩展布线的磁场产生部分，并与第一选定的位线，导电图案和具有自发磁化的磁阻元件连接，存储数据并连接在延伸布线和导电图案之间。在对存储单元的数据写入操作中，通过流过存储单元的磁场产生部分的延长布线的写入电流将写数据写入存储单元的磁阻元件，基于写入电流的方向来确定写入数据。在来自存储单元的数据读取操作中，读取的电流流过存储单元中的磁场产生部分的延伸布线和磁阻元件。存储单元阵列部分包括以矩阵形式布置的存储器单元，并且每个存储单元至少与第一字线和第一位线连接，栅极部分。

7. 发明申请

US20060098477A1 Magnetic random access memory 有权
公开(公告)号：US20060098477A1
公开(公告)日：2006-05-11
申请号：US10523198
申请日：2003-07-28
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Hisao Matsutera , Atsushi Kamijo , Kenichi Shimura
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Hisao Matsutera , Atsushi Kamijo , Kenichi Shimura
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic random access memory is composed of a plurality of first signal lines provided to extend in a first direction, a plurality of second signal lines provided to extend in a second direction substantially perpendicular to the first direction, a plurality of memory cells respectively provided at the intersections of the plurality of first signal lines and the plurality of second signal lines, and a plurality of magnetic structures respectively provided to the plurality of memory cells. Each of the plurality of memory cells has a magneto-resistance element containing a spontaneous magnetization layer which has a first threshold function, and the direction of the spontaneous magnetization of the spontaneous magnetization layer is reversed when an element applied magnetic field having the intensity equal to or larger than a first threshold function value is applied. Each of the plurality of magnetic structures has a second threshold function, and generates a magnetic structure magnetic field in response to a structure-applied magnetic field. When the structure-applied magnetic field has the intensity equal to or larger than the second threshold function value, a third magnetic field is generated as the magnetic structure magnetic field. When the structure applied magnetic field has the intensity less than the second threshold function value, a fourth magnetic field is generated which is weaker than the third magnetic field as the magnetic structure magnetic field. A first write current supplied to one of the plurality of first signal lines as a first selected signal line, and a first magnetic field is generated. A second write current is supplied to one of the plurality of second signal lines as a second selected signal line, and a second magnetic field is generated. A first synthetic magnetic field of the first magnetic field and the second magnetic field is applied to the magnetic structure as the structure applied magnetic field. The element applied magnetic field having the intensity equal to or larger than the first threshold function value is applied to the selected memory cell provided at the intersection of the first selected signal line and the second selected signal line. A second synthetic magnetic field of the first synthetic magnetic field and the magnetic structure magnetic field is generated as the element applied magnetic field such that the element applied magnetic field having the intensity less than the first threshold function value is applied to each of non-selected memory cells other than the selected memory cell.

8. 发明授权

US08737119B2 Magnetic memory cell and magnetic random access memory 有权
标题翻译：磁存储单元和磁性随机存取存储器
公开(公告)号：US08737119B2
公开(公告)日：2014-05-27
申请号：US13433895
申请日：2012-03-29
申请人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi , Hideaki Numata , Norikazu Ohshima
发明人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/16
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.
摘要翻译：磁存储单元1设置有磁记录层10，磁记录层10是铁磁层，和通过非磁性层20与磁记录层10连接的钉扎层30.磁记录层10具有磁化反转区域13，第一磁化固定区域11和第二磁化固定区域12.磁化反转区域13具有其取向可反转并与被钉扎层30重叠的磁化。第一磁化固定区域11与磁化反转中的第一边界B1连接区域13和磁化取向在第一方向固定。第二磁化固定区域12与磁化反转区域13中的第二边界B2连接，并且磁化取向固定在第二方向上。第一方向和第二方向彼此相反。

9. 发明授权

US08693238B2 MRAM having variable word line drive potential 有权
标题翻译： MRAM具有可变字线驱动电位
公开(公告)号：US08693238B2
公开(公告)日：2014-04-08
申请号：US12376925
申请日：2007-07-13
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C11/00 , G11C8/00
CPC分类号： G11C8/08 , G11C11/1659 , G11C11/1675
摘要： An MRAM of a spin transfer type is provided with a memory cell 10 and a word driver 30. The memory cell 10 has a magnetic resistance element 1 and a selection transistor TR having one of source/drain electrodes which is connected with one end of the magnetic resistance element 1. The word driver 30 drives a word line WL connected with a gate electrode of the selection transistor TR. The word driver 30 changes a drive voltage of the word line WL according to the write data DW to be written in the magnetic resistance element 1.
摘要翻译：自旋转移型的MRAM具有存储单元10和字驱动器30.存储单元10具有磁阻元件1和选择晶体管TR，其具有与源极/漏极之一连接的源极/漏极之一字驱动器30驱动与选择晶体管TR的栅电极连接的字线WL。字驱动器30根据要写入磁阻元件1的写数据DW改变字线WL的驱动电压。

10. 发明授权

US08281221B2 Operation method of MRAM including correcting data for single-bit error and multi-bit error 有权
标题翻译： MRAM的操作方法包括纠正单位错误和多位错误的数据
公开(公告)号：US08281221B2
公开(公告)日：2012-10-02
申请号：US12083373
申请日：2006-10-17
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G06F11/00
CPC分类号： G11C11/16 , G06F11/1044 , G06F11/1076 , G11C11/1653 , G11C11/1673 , G11C11/1675 , G11C2029/0411 , G11C2211/5641
摘要： An operation method of a MRAM of the present invention stores in memory arrays, error correction codes, each of which comprises of symbols, each of which comprises bits, and to which an error correction is possible in units of symbols. In the operation method, the symbols are read by using the reference cells different from each other. Moreover, when a correctable error is detected in a read data of the error correction code from data cells corresponding to an input address, (A) a data in the data cell corresponding to an error bit is corrected, for a first error symbol as an error pattern of one bit, and (B) a data in the reference cell that is used to read a second error symbol is corrected for a second error symbol as en error pattern of the bits.
摘要翻译：本发明的MRAM的操作方法存储在存储器阵列中，每个都包括符号，每个符号包括位，并且可以以符号为单位进行纠错。在操作方法中，通过使用彼此不同的参考单元来读取符号。此外，当在对应于输入地址的数据单元的错误校正码的读取数据中检测到可校正错误时，（A）对与错误位对应的数据单元中的数据进行校正，对于第一错误符号，作为一个比特的错误模式和（B）用于读取第二错误符号的参考小区中的数据被校正为第二个错误符号作为比特的错误模式。

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