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1. 发明授权

US07885095B2 Magnetic random access memory and operation method of the same 有权
标题翻译：磁性随机存取存储器及其操作方法相同
公开(公告)号：US07885095B2
公开(公告)日：2011-02-08
申请号：US12303821
申请日：2007-06-01
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C11/00 , C11C11/14
CPC分类号： G11C11/1673 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A magnetic random access memory of the present invention includes: a plurality of first wirings and a plurality of second wirings extending in a first direction; a plurality of third wirings and a plurality of fourth wirings extending in a second direction; and a plurality of memory cells provided at intersections of the plurality of first wirings and the plurality of third wirings, respectively. Each of the plurality of memory cells includes: a first transistor and a second transistor connected in series between one of the plurality of first wirings and one of the plurality of second wirings and controlled in response to a signal on one of the plurality of third wirings, a first magnetic resistance element having one end connected to a write wiring through which the first transistor and the second transistor are connected, and the other end grounded; and a second magnetic resistance element having one end connected to the write wiring, and the other end connected to the fourth wiring.
摘要翻译：本发明的磁性随机存取存储器包括：沿第一方向延伸的多个第一布线和多条第二布线; 多个第三布线和沿第二方向延伸的多个第四布线; 以及多个存储单元，分别设置在所述多个第一布线和所述多个第三布线的交点处。所述多个存储单元中的每一个包括：第一晶体管和第二晶体管，其串联连接在所述多个第一布线中的一个与所述多个第二布线中的一个之间，并响应于所述多个第三布线之一上的信号而被控制第一磁阻元件，其一端连接到第一晶体管和第二晶体管连接的写入布线，另一端接地; 以及第二磁阻元件，其一端连接到写入布线，另一端连接到第四布线。

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