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1. 发明授权

US07704896B2 Atomic layer deposition of thin films on germanium 有权
标题翻译：原子层沉积在锗上的薄膜
公开(公告)号：US07704896B2
公开(公告)日：2010-04-27
申请号：US11336621
申请日：2006-01-20
申请人： Suvi P. Haukka , Marko Tuominen , Antti Rahtu
发明人： Suvi P. Haukka , Marko Tuominen , Antti Rahtu
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/28158 , H01L21/28255 , H01L21/3141 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L29/518
摘要： Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.
摘要翻译：锗具有比硅更高的迁移率，因此被认为是用于CMOS技术的良好替代半导体。表面处理a可以促进在锗衬底上的诸如高k电介质层的薄膜的原子层沉积（ALD）。表面处理可以包括GeO x或GeO x N y的薄层的形成。在表面处理之后并且在沉积所需的薄膜之前，可以在衬底上沉积钝化层。钝化层可以是例如由ALD沉积的金属氧化物层。

2. 发明授权

US06660660B2 Methods for making a dielectric stack in an integrated circuit 有权
标题翻译：在集成电路中制作电介质叠层的方法
公开(公告)号：US06660660B2
公开(公告)日：2003-12-09
申请号：US09945463
申请日：2001-08-31
申请人： Suvi P. Haukka , Marko Tuominen
发明人： Suvi P. Haukka , Marko Tuominen
IPC分类号： H01L2131
CPC分类号： H01L21/3162 , C23C16/40 , C23C16/403 , C23C16/45529 , H01L21/02178 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/3142 , H01L21/31604 , H01L28/56 , Y10S977/891
摘要： An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent diffusion of molecules between the materials. In the illustrated embodiments, a high-k dielectric material is sandwiched between two layers of aluminum oxide or lanthanide oxide in the formation of a transistor gate dielectric or a memory cell dielectric. Aluminum oxides can serve as a nucleation layer with less than a full monolayer of aluminum oxide. One monolayer or greater can also serve as a diffusion barrier, protecting the substrate from oxidation and the high-k dielectric from impurity diffusion. Nanolaminates can be formed with multiple alternating interface layers and high-k layers, where intermediate interface layers can break up the crystal structure of the high-k materials and lower leakage levels.
摘要翻译：特别是通过原子层沉积（ALD）型方法形成的超薄氧化铝和镧系元素层用作两种或多种材料之间的界面层。界面层可以防止基底的氧化并且可以防止分子在材料之间的扩散。在所示实施例中，在形成晶体管栅极电介质或存储单元电介质时，高k介电材料夹在两层氧化铝或镧系元素氧化物之间。氧化铝可用作具有少于全部氧化铝单层的成核层。一个或多个单层也可以用作扩散阻挡层，保护基底免受氧化和高k电介质的杂质扩散。纳米材料可以形成多个交替界面层和高k层，其中中间界面层可以分解高k材料的晶体结构并降低泄漏水平。

3. 发明授权

US06492283B2 Method of forming ultrathin oxide layer 有权
标题翻译：形成超薄氧化层的方法
公开(公告)号：US06492283B2
公开(公告)日：2002-12-10
申请号：US09791167
申请日：2001-02-22
申请人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
发明人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
IPC分类号： H01L2131
CPC分类号： H01L21/28194 , H01L21/02049 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02359 , H01L21/28167 , H01L21/28211 , H01L21/31662 , H01L29/517 , Y10S438/906
摘要： A method is disclosed for forming an ultrathin oxide layer of uniform thickness. The method is particularly advantageous for producing uniformly thin interfacial oxides beneath materials of high dielectric permittivity, or uniformly thin passivation oxides. Hydrofluoric (HF) etching of a silicon surface, for example, is followed by termination of the silicon surface with ligands larger than H or F, particularly hydroxyl, alkoxy or carboxylic tails. The substrate is oxidized with the surface termination in place. The surface termination and relatively low temperatures moderate the rate of oxidation, such that a controllable thickness of oxide is formed. In some embodiments, the ligand termination is replaced with OH prior to further deposition. The deposition preferably includes alternating, self-limiting chemistries in an atomic layer deposition process, though any other suitable deposition process can be used. Two or more of the HF etching, surface termination, oxidation, hydroxyl replacement of the surface termination and deposition on the oxide can be conducted in situ.
摘要翻译：公开了形成均匀厚度的超薄氧化物层的方法。该方法特别有利于在高介电常数材料或均匀薄的钝化氧化物材料下制备均匀的薄界面氧化物。例如，硅表面的氢氟酸（HF）蚀刻之后，用大于H或F的配体，特别是羟基，烷氧基或羧酸尾部的配位体终止硅表面。衬底被氧化，表面终止就位。表面终止和相对低的温度调节氧化速率，使得形成可控的氧化物厚度。在一些实施方案中，在进一步沉积之前，将配体终止物用OH代替。沉积优选地包括在原子层沉积工艺中的交替的自限制化学，尽管可以使用任何其它合适的沉积工艺。 HF蚀刻，表面终止，氧化，羟基取代表面终止和沉积在氧化物上的两个或多个可以原位进行。

4. 发明授权

US08956971B2 Selective formation of metallic films on metallic surfaces 有权
标题翻译：在金属表面上选择性地形成金属膜
公开(公告)号：US08956971B2
公开(公告)日：2015-02-17
申请号：US13702992
申请日：2011-06-10
申请人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
发明人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
IPC分类号： H01L21/44 , H01L21/02 , C23C16/02 , C23C16/14 , C23C16/455 , H01L21/285 , H01L21/768
CPC分类号： H01L21/7685 , C23C16/0227 , C23C16/14 , C23C16/45525 , H01L21/02068 , H01L21/02697 , H01L21/28562 , H01L21/32051 , H01L21/32053 , H01L21/76826 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L21/76883
摘要： Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
摘要翻译：金属层可以相对于基板的第二表面选择性地沉积在基板的表面上。在优选实施例中，金属层选择性地沉积在铜上，而不是绝缘或介电材料。在优选的实施方案中，第一前体在第一表面上形成层或吸附的物质，随后反应或转化以形成金属层。优选选择沉积温度使得达到高于约90％的选择性。

5. 发明授权

US07038284B2 Methods for making a dielectric stack in an integrated circuit 有权
公开(公告)号：US07038284B2
公开(公告)日：2006-05-02
申请号：US10653737
申请日：2003-09-02
申请人： Suvi P. Haukka , Jarmo Skarp , Marko Tuominen
发明人： Suvi P. Haukka , Jarmo Skarp , Marko Tuominen
IPC分类号： H01L29/76
CPC分类号： H01L21/3162 , C23C16/40 , C23C16/403 , C23C16/45529 , H01L21/02178 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/3142 , H01L21/31604 , H01L28/56 , Y10S977/891
摘要： An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent diffusion of molecules between the materials. In the illustrated embodiments, a high-k dielectric material is sandwiched between two layers of aluminum oxide or lanthanide oxide in the formation of a transistor gate dielectric or a memory cell dielectric. Aluminum oxides can serve as a nucleation layer with less than a full monolayer of aluminum oxide. One monolayer or greater can also serve as a diffusion barrier, protecting the substrate from oxidation and the high-k dielectric from impurity diffusion. Nanolaminates can be formed with multiple alternating interface layers and high-k layers, where intermediate interface layers can break up the crystal structure of the high-k materials and lower leakage levels.

6. 发明申请

US20130189837A1 SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES 有权
公开(公告)号：US20130189837A1
公开(公告)日：2013-07-25
申请号：US13702992
申请日：2011-06-10
申请人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
发明人： Suvi P. Haukka , Antti Niskanen , Marko Tuominen
IPC分类号： H01L21/02
CPC分类号： H01L21/7685 , C23C16/0227 , C23C16/14 , C23C16/45525 , H01L21/02068 , H01L21/02697 , H01L21/28562 , H01L21/32051 , H01L21/32053 , H01L21/76826 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L21/76883
摘要： Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

7. 发明授权

US06794314B2 Method of forming ultrathin oxide layer 有权
标题翻译：形成超薄氧化层的方法
公开(公告)号：US06794314B2
公开(公告)日：2004-09-21
申请号：US10281418
申请日：2002-10-25
申请人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
发明人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
IPC分类号： H01L2131
CPC分类号： H01L21/28194 , H01L21/02049 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02359 , H01L21/28167 , H01L21/28211 , H01L21/31662 , H01L29/517 , Y10S438/906
摘要： A method is disclosed for forming an ultrathin oxide layer of uniform thickness. The method is particularly advantageous for producing uniformly thin interfacial oxides beneath materials of high dielectric permitivity, or uniformly thin passivation oxides. Hydrofluoric (HF) etching of a silicon surface, for example, is followed by termination of the silicon surface with ligands larger than H or F, particularly hydroxyl, alkoxy or carboxylic tails. The substrate is oxidized with the surface termination in place. The surface termination and relatively low temperatures moderate the rate of oxidation, such that a controllable thickness of oxide is formed. In some embodiments, the ligand termination is replaced with OH prior to further deposition. The deposition preferably includes alternating, self-limiting chemistries in an atomic layer deposition process, though any other suitable deposition process can be used. Two or more of the HF etching, surface termination, oxidation, hydroxyl replacement of the surface termination and deposition on the oxide can be conducted in situ.
摘要翻译：公开了形成均匀厚度的超薄氧化物层的方法。该方法特别有利于在高介电常数材料或均匀薄的钝化氧化物材料下制备均匀的薄界面氧化物。例如，硅表面的氢氟酸（HF）蚀刻之后，用大于H或F的配体，特别是羟基，烷氧基或羧酸尾部的配位体终止硅表面。衬底被氧化，表面终止就位。表面终止和相对低的温度调节氧化速率，使得形成可控的氧化物厚度。在一些实施方案中，在进一步沉积之前，将配体终止物用OH代替。沉积优选地包括在原子层沉积工艺中的交替的自限制化学，尽管可以使用任何其它合适的沉积工艺。 HF蚀刻，表面终止，氧化，羟基取代表面终止和沉积在氧化物上的两个或多个可以原位进行。

8. 发明申请

US20070036892A1 Enhanced deposition of noble metals 有权
标题翻译：增强贵金属的沉积
公开(公告)号：US20070036892A1
公开(公告)日：2007-02-15
申请号：US11375819
申请日：2006-03-14
申请人： Suvi Haukka , Marko Tuominen , Antti Rahtu
发明人： Suvi Haukka , Marko Tuominen , Antti Rahtu
IPC分类号： C23C16/00
CPC分类号： C23C16/08 , C23C16/0218 , C23C16/18 , C23C16/45525 , H01L21/28562
摘要： The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
摘要翻译：本发明一般涉及通过原子层沉积来增强在衬底上沉积贵金属薄膜的方法。使用气态卤化物或金属有机化合物进行处理减少了在特定表面上沉积贵金属的孵育时间。该方法可用于促进选择性沉积。例如，可以通过用卤化物反应物预处理来提高贵金属在高k材料上相对于绝缘体的选择性沉积。此外，可以使用卤化物处理以避免沉积在反应室的石英壁上。

9. 发明申请

US20060292872A1 Atomic layer deposition of thin films on germanium 有权
标题翻译：原子层沉积在锗上的薄膜
公开(公告)号：US20060292872A1
公开(公告)日：2006-12-28
申请号：US11336621
申请日：2006-01-20
申请人： Suvi Haukka , Marko Tuominen , Antti Rahtu
发明人： Suvi Haukka , Marko Tuominen , Antti Rahtu
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/28158 , H01L21/28255 , H01L21/3141 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L29/518
摘要： Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.
摘要翻译：锗具有比硅更高的迁移率，因此被认为是用于CMOS技术的良好替代半导体。表面处理a可以促进在锗衬底上的诸如高k电介质层的薄膜的原子层沉积（ALD）。表面处理可以包括形成GeO层或GeO x N层的薄层。在表面处理之后并且在沉积所需的薄膜之前，可以在衬底上沉积钝化层。钝化层可以是例如由ALD沉积的金属氧化物层。

10. 发明授权

US08309173B2 System for controlling the sublimation of reactants 有权
标题翻译：用于控制反应物升华的系统
公开(公告)号：US08309173B2
公开(公告)日：2012-11-13
申请号：US12964222
申请日：2010-12-09
申请人： Marko Tuominen , Eric Shero , Mohith Verghese
发明人： Marko Tuominen , Eric Shero , Mohith Verghese
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , C23C16/405 , C23C16/4483 , C23C16/45525
摘要： An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.
摘要翻译：一种装置和方法改善了升华容器内固体前体的加热。在一个实施例中，惰性导热元件分散在固体前体单元中。例如，导热元件可以包括粉末，珠，棒，纤维等。在一种布置中，微波能量可以直接加热导热元件。

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