专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130154303A1 SUNVISOR HAVING DAMPER DEVICE 有权
标题翻译：具有阻尼器装置的SUVVISOR
公开(公告)号：US20130154303A1
公开(公告)日：2013-06-20
申请号：US13612304
申请日：2012-09-12
申请人： Yong Bae Kim , Deok Rae Kim
发明人： Yong Bae Kim , Deok Rae Kim
IPC分类号： B60J3/02
CPC分类号： B60J3/0265
摘要： A sunvisor apparatus may include a pivot arm fixed to a headlining, a sunvisor portion rotatably installed at an end portion of the pivot arm, and a damper device installed between the pivot arm and the sunvisor portion to reduce a rotating speed of the sunvisor portion through increasing of a frictional force while the end portion of the pivot arm may be inserted into the damper device.
摘要翻译：遮阳装置可以包括固定到头架的枢转臂，可旋转地安装在枢转臂的端部处的防晒装置，以及安装在枢转臂和防晒部之间的阻尼装置，以减小防晒罩部分通过的旋转速度当枢转臂的端部可以插入阻尼器装置中时摩擦力的增加。

2. 发明授权

US07306002B2 System and method for wet cleaning a semiconductor wafer 失效
标题翻译：用于湿式清洗半导体晶片的系统和方法
公开(公告)号：US07306002B2
公开(公告)日：2007-12-11
申请号：US10336631
申请日：2003-01-04
申请人： Yong Bae Kim , Jungyup Kim , Yong Ho Lee , In Kwon Jeong
发明人： Yong Bae Kim , Jungyup Kim , Yong Ho Lee , In Kwon Jeong
IPC分类号： B08B3/12
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/12 , B08B11/02
摘要： A system and method for cleaning a substrate, such as a semiconductor wafer, utilizes a rotatable wafer supporting assembly with a cylindrical body to provide stability for the substrate being cleaned, even at high rotational speeds. The rotatable wafer supporting assembly may include wafer holding mechanisms with pivotable confining members that are configured to hold the substrate using centrifugal force when the wafer supporting assembly is rotated. In an embodiment, the cleaning system may include a positioning system operatively connected to an acoustic transducer to provide meaningful control of the acoustic energy applied to a surface of the substrate by selectively changing the distance between the acoustic transducer and the substrate surface so that the substrate can be cleaned more effectively.
摘要翻译：用于清洁诸如半导体晶片的衬底的系统和方法利用具有圆柱形主体的可旋转晶片支撑组件来提供即使在高转速下被清洁衬底的稳定性。可旋转晶片支撑组件可以包括具有可枢转的限制构件的晶片保持机构，其被配置为当晶片支撑组件旋转时使用离心力来保持衬底。在一个实施例中，清洁系统可以包括可操作地连接到声换能器的定位系统，以通过选择性地改变声换能器和衬底表面之间的距离来提供施加到衬底表面的声能的有意义的控制，使得衬底可以更有效地清洗。

3. 发明授权

US06492283B2 Method of forming ultrathin oxide layer 有权
标题翻译：形成超薄氧化层的方法
公开(公告)号：US06492283B2
公开(公告)日：2002-12-10
申请号：US09791167
申请日：2001-02-22
申请人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
发明人： Ivo Raaijmakers , Yong-Bae Kim , Marko Tuominen , Suvi P. Haukka
IPC分类号： H01L2131
CPC分类号： H01L21/28194 , H01L21/02049 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02359 , H01L21/28167 , H01L21/28211 , H01L21/31662 , H01L29/517 , Y10S438/906
摘要： A method is disclosed for forming an ultrathin oxide layer of uniform thickness. The method is particularly advantageous for producing uniformly thin interfacial oxides beneath materials of high dielectric permittivity, or uniformly thin passivation oxides. Hydrofluoric (HF) etching of a silicon surface, for example, is followed by termination of the silicon surface with ligands larger than H or F, particularly hydroxyl, alkoxy or carboxylic tails. The substrate is oxidized with the surface termination in place. The surface termination and relatively low temperatures moderate the rate of oxidation, such that a controllable thickness of oxide is formed. In some embodiments, the ligand termination is replaced with OH prior to further deposition. The deposition preferably includes alternating, self-limiting chemistries in an atomic layer deposition process, though any other suitable deposition process can be used. Two or more of the HF etching, surface termination, oxidation, hydroxyl replacement of the surface termination and deposition on the oxide can be conducted in situ.
摘要翻译：公开了形成均匀厚度的超薄氧化物层的方法。该方法特别有利于在高介电常数材料或均匀薄的钝化氧化物材料下制备均匀的薄界面氧化物。例如，硅表面的氢氟酸（HF）蚀刻之后，用大于H或F的配体，特别是羟基，烷氧基或羧酸尾部的配位体终止硅表面。衬底被氧化，表面终止就位。表面终止和相对低的温度调节氧化速率，使得形成可控的氧化物厚度。在一些实施方案中，在进一步沉积之前，将配体终止物用OH代替。沉积优选地包括在原子层沉积工艺中的交替的自限制化学，尽管可以使用任何其它合适的沉积工艺。 HF蚀刻，表面终止，氧化，羟基取代表面终止和沉积在氧化物上的两个或多个可以原位进行。

4. 发明授权

US08602480B2 Sunvisor having damper device 有权
标题翻译：遮阳器具有阻尼装置
公开(公告)号：US08602480B2
公开(公告)日：2013-12-10
申请号：US13612304
申请日：2012-09-12
申请人： Yong Bae Kim , Deok Rae Kim
发明人： Yong Bae Kim , Deok Rae Kim
IPC分类号： B60J1/02
CPC分类号： B60J3/0265
摘要： A sunvisor apparatus may include a pivot arm fixed to a headlining, a sunvisor portion rotatably installed at an end portion of the pivot arm, and a damper device installed between the pivot arm and the sunvisor portion to reduce a rotating speed of the sunvisor portion through increasing of a frictional force while the end portion of the pivot arm may be inserted into the damper device.
摘要翻译：遮阳装置可以包括固定到头架的枢转臂，可旋转地安装在枢转臂的端部处的防晒装置，以及安装在枢转臂和防晒部之间的阻尼装置，以减小防晒罩部分通过的旋转速度当枢转臂的端部可以插入阻尼器装置中时摩擦力的增加。

5. 发明授权

US08299304B2 Alignment material for liquid crystal display device of vertical alignment mode and method of preparing the same 有权
标题翻译：垂直取向模式的液晶显示装置的对准材料及其制备方法
公开(公告)号：US08299304B2
公开(公告)日：2012-10-30
申请号：US12281326
申请日：2007-02-09
申请人： Jin wook Choi , Dal bong Seo , Jae cheol Park , Yong bae Kim
发明人： Jin wook Choi , Dal bong Seo , Jae cheol Park , Yong bae Kim
IPC分类号： C07C209/00 , C07C291/00 , C07C211/00
CPC分类号： C09K19/56 , C07C211/50 , C07C217/76 , C07C2601/14 , C08G73/10 , G02F1/133723
摘要： This invention provides alignment materials for liquid crystal display device of vertical alignment mode and methods for the preparation of the same, and more particularly, it provides diaminobenzene derivatives represented by the following formula 1 (shown in description), capable of aligning liquid crystal in uniform and vertical way and remarkably improving clarity and solubility against organic solvents, methods for the preparation of the same and liquid crystal alignment films using the same.
摘要翻译：本发明提供了用于垂直取向模式的液晶显示装置的取向材料及其制备方法，更具体地，提供了由下式1（表示的说明）表示的二氨基苯衍生物，其能够使液晶均匀和垂直方式，并显着提高了对有机溶剂的透明度和溶解性，制备该溶液的方法和使用其的液晶取向膜。

6. 发明授权

US07258124B2 Apparatus and method for treating surfaces of semiconductor wafers using ozone 失效
标题翻译：使用臭氧处理半导体晶片表面的设备和方法
公开(公告)号：US07258124B2
公开(公告)日：2007-08-21
申请号：US11335948
申请日：2006-01-20
申请人： In Kwon Jeong , Yong Bae Kim , Jungyup Kim
发明人： In Kwon Jeong , Yong Bae Kim , Jungyup Kim
IPC分类号： B08B3/00
CPC分类号： H01L21/02046 , B08B3/02 , B08B3/08 , B08B2203/005 , H01L21/02238 , H01L21/31662 , H01L21/67051
摘要： An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.
摘要翻译：用诸如臭氧的反应性气体处理半导体晶片的表面的设备和方法利用从气体喷嘴结构喷出的气态物流，以在半导体晶片表面上形成的处理流体的边界层上形成凹坑，增加通过边界层到达晶片表面的反应气体的量。该设备和方法可用于通过氧化来清洁半导体晶片表面和/或在晶片表面上生长氧化物层。

7. 发明授权

US06836929B2 Accessary tool mounting device for vacuum cleaner 失效
标题翻译：吸尘器附件工具安装装置
公开(公告)号：US06836929B2
公开(公告)日：2005-01-04
申请号：US10125426
申请日：2002-04-19
申请人： Yong-Bae Kim
发明人： Yong-Bae Kim
IPC分类号： A47L9/02 , A47L9/00
CPC分类号： A47L9/0009 , A47L9/0027
摘要： An accessory tool mounting device is provided for a vacuum cleaner by means of which accessory tools can be detachably mounted on the vacuum cleaner. The vacuum cleaner includes a suction device, a plurality of wheels, and exhaust portions for filtering out foreign substances contained in air drawn in by the suction device and exhausted as filtered air. The accessory tool mounting device includes wheel fender portions that extend outwardly from a main body of the vacuum cleaner, exhaust-portion forming extensions that extend outwardly from the main body and are formed adjacent to the wheel fender portions, a fastening box member an upper end of which is open and which is formed between the wheel fender portion and the exhaust-portion forming extension, and an accessory mounting member comprising a U-shaped elastic fastening end which is insertable downwardly into the fastening box member.

8. 发明授权

US06723653B1 Process for reducing defects in copper-filled vias and/or trenches formed in porous low-k dielectric material 有权
标题翻译：用于减少在多孔低k电介质材料中形成的铜填充过孔和/或沟槽中的缺陷的方法
公开(公告)号：US06723653B1
公开(公告)日：2004-04-20
申请号：US09932527
申请日：2001-08-17
申请人： Yong-Bae Kim
发明人： Yong-Bae Kim
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31695 , H01L21/76802 , H01L21/7682 , H01L21/76843
摘要： Removal of rough edges in punctured or ruptured pores on the walls of an opening, such as a via and/or trench opening, in a layer of porous dielectric material, in an integrated circuit structure, is carried out to permit satisfactory lining of all exposed surfaces of the porous dielectric material with a barrier layer which prevents contact between a copper filler and the porous dielectric material, and facilitates filling of the completely lined punctured/ruptured pore with such copper filler to eliminate void formation. The rough edges of the punctured/ruptured pores are removed by an isotropic etch of the exposed walls of the opening. Preferably, the dielectric material in the porous dielectric material is a low k dielectric material.
摘要翻译：在集成电路结构中，在多孔介电材料层中的诸如通路和/或沟槽开口的开口的壁上的穿孔或破裂的孔中去除粗糙边缘，以允许所有暴露的具有阻挡层的多孔电介质材料的表面防止铜填料和多孔电介质材料之间的接触，并且有助于用这种铜填料填充完全衬里的穿孔/破裂孔，以消除空隙形成。穿孔/破裂的孔的粗糙边缘通过开口的暴露的壁的各向同性蚀刻被去除。优选地，多孔电介质材料中的电介质材料是低k电介质材料。

9. 发明授权

US06503840B2 Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning 有权
公开(公告)号：US06503840B2
公开(公告)日：2003-01-07
申请号：US09848758
申请日：2001-05-02
申请人： Wilbur G. Catabay , Wei-Jen Hsia , Hong-Qiang Lu , Yong-Bae Kim , Kiran Kumar , Kai Zhang , Richard Schinella , Philippe Schoenborn
发明人： Wilbur G. Catabay , Wei-Jen Hsia , Hong-Qiang Lu , Yong-Bae Kim , Kiran Kumar , Kai Zhang , Richard Schinella , Philippe Schoenborn
IPC分类号： H01L21302
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31633 , H01L21/76802 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： A composite layer of dielectric material is first formed over the integrated circuit structure, comprising a thin barrier layer of dielectric material, a layer of low k dielectric material over the barrier layer, and a thin capping layer of dielectric material over the layer of low k dielectric material. A photoresist mask, formed over the capping layer, is baked in the presence of UV light to cross-link the mask material. The composite layer is then etched through the resist mask using an etchant gas mixture including CO, but not oxygen. Newly exposed surfaces of low k dielectric material are then optionally densified to harden them. The resist mask is then removed using a plasma of a neutral or reducing gas. Exposed surfaces of low k dielectric material are then passivated by a low power oxygen plasma. Preferably, optional densification, mask removal, and passivation are all done in the same vacuum apparatus. The substrate is then solvent cleaned to remove etch residues and then annealed to degasify the low k dielectric material. The substrate is then RF cleaned and a thin layer of PVD titanium is then formed in the same chamber over the surfaces of the openings. CVD titanium nitride is then formed over the titanium in the same vacuum apparatus. The coated openings are then filled with aluminum, tungsten, or copper.

10. 发明申请

US20110105698A1 ALIGNMENT MATERIAL FOR LIQUID CRYSTAL DISPLAY DEVICE OF VERTICAL ALIGNMENT MODE AND METHOD OF PREPARING THE SAME 有权
标题翻译：用于垂直对准模式的液晶显示装置的对准材料及其制备方法
公开(公告)号：US20110105698A1
公开(公告)日：2011-05-05
申请号：US12281326
申请日：2007-02-09
申请人： Jin wook Choi , Dal bong Seo , Jae cheol Park , Yong bae Kim
发明人： Jin wook Choi , Dal bong Seo , Jae cheol Park , Yong bae Kim
IPC分类号： C08G73/10 , C07C211/50 , C07C209/50
CPC分类号： C09K19/56 , C07C211/50 , C07C217/76 , C07C2601/14 , C08G73/10 , G02F1/133723
摘要： This invention provides alignment materials for liquid crystal display device of vertical alignment mode and methods for the preparation of the same, and more particularly, it provides diaminobenzene derivatives represented by the following formula 1 (shown in description), capable of aligning liquid crystal in uniform and vertical way and remarkably improving clarity and solubility against organic solvents, methods for the preparation of the same and liquid crystal alignment films using the same.
摘要翻译：本发明提供了用于垂直取向模式的液晶显示装置的取向材料及其制备方法，更具体地，提供了由下式1（表示的说明）表示的二氨基苯衍生物，其能够使液晶均匀和垂直方式，并显着提高了对有机溶剂的透明度和溶解性，制备该溶液的方法和使用其的液晶取向膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式