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    • 2. 发明授权
    • System and method for wet cleaning a semiconductor wafer
    • 用于湿式清洗半导体晶片的系统和方法
    • US07306002B2
    • 2007-12-11
    • US10336631
    • 2003-01-04
    • Yong Bae KimJungyup KimYong Ho LeeIn Kwon Jeong
    • Yong Bae KimJungyup KimYong Ho LeeIn Kwon Jeong
    • B08B3/12
    • H01L21/67051B08B3/02B08B3/12B08B11/02
    • A system and method for cleaning a substrate, such as a semiconductor wafer, utilizes a rotatable wafer supporting assembly with a cylindrical body to provide stability for the substrate being cleaned, even at high rotational speeds. The rotatable wafer supporting assembly may include wafer holding mechanisms with pivotable confining members that are configured to hold the substrate using centrifugal force when the wafer supporting assembly is rotated. In an embodiment, the cleaning system may include a positioning system operatively connected to an acoustic transducer to provide meaningful control of the acoustic energy applied to a surface of the substrate by selectively changing the distance between the acoustic transducer and the substrate surface so that the substrate can be cleaned more effectively.
    • 用于清洁诸如半导体晶片的衬底的系统和方法利用具有圆柱形主体的可旋转晶片支撑组件来提供即使在高转速下被清洁衬底的稳定性。 可旋转晶片支撑组件可以包括具有可枢转的限制构件的晶片保持机构,其被配置为当晶片支撑组件旋转时使用离心力来保持衬底。 在一个实施例中,清洁系统可以包括可操作地连接到声换能器的定位系统,以通过选择性地改变声换能器和衬底表面之间的距离来提供施加到衬底表面的声能的有意义的控制,使得衬底 可以更有效地清洗。
    • 3. 发明授权
    • Method of forming ultrathin oxide layer
    • 形成超薄氧化层的方法
    • US06492283B2
    • 2002-12-10
    • US09791167
    • 2001-02-22
    • Ivo RaaijmakersYong-Bae KimMarko TuominenSuvi P. Haukka
    • Ivo RaaijmakersYong-Bae KimMarko TuominenSuvi P. Haukka
    • H01L2131
    • H01L21/28194H01L21/02049H01L21/02052H01L21/02238H01L21/02255H01L21/02299H01L21/02359H01L21/28167H01L21/28211H01L21/31662H01L29/517Y10S438/906
    • A method is disclosed for forming an ultrathin oxide layer of uniform thickness. The method is particularly advantageous for producing uniformly thin interfacial oxides beneath materials of high dielectric permittivity, or uniformly thin passivation oxides. Hydrofluoric (HF) etching of a silicon surface, for example, is followed by termination of the silicon surface with ligands larger than H or F, particularly hydroxyl, alkoxy or carboxylic tails. The substrate is oxidized with the surface termination in place. The surface termination and relatively low temperatures moderate the rate of oxidation, such that a controllable thickness of oxide is formed. In some embodiments, the ligand termination is replaced with OH prior to further deposition. The deposition preferably includes alternating, self-limiting chemistries in an atomic layer deposition process, though any other suitable deposition process can be used. Two or more of the HF etching, surface termination, oxidation, hydroxyl replacement of the surface termination and deposition on the oxide can be conducted in situ.
    • 公开了形成均匀厚度的超薄氧化物层的方法。 该方法特别有利于在高介电常数材料或均匀薄的钝化氧化物材料下制备均匀的薄界面氧化物。 例如,硅表面的氢氟酸(HF)蚀刻之后,用大于H或F的配体,特别是羟基,烷氧基或羧酸尾部的配位体终止硅表面。 衬底被氧化,表面终止就位。 表面终止和相对低的温度调节氧化速率,使得形成可控的氧化物厚度。 在一些实施方案中,在进一步沉积之前,将配体终止物用OH代替。 沉积优选地包括在原子层沉积工艺中的交替的自限制化学,尽管可以使用任何其它合适的沉积工艺。 HF蚀刻,表面终止,氧化,羟基取代表面终止和沉积在氧化物上的两个或多个可以原位进行。
    • 8. 发明授权
    • Process for reducing defects in copper-filled vias and/or trenches formed in porous low-k dielectric material
    • 用于减少在多孔低k电介质材料中形成的铜填充过孔和/或沟槽中的缺陷的方法
    • US06723653B1
    • 2004-04-20
    • US09932527
    • 2001-08-17
    • Yong-Bae Kim
    • Yong-Bae Kim
    • H01L21302
    • H01L21/31116H01L21/02063H01L21/31695H01L21/76802H01L21/7682H01L21/76843
    • Removal of rough edges in punctured or ruptured pores on the walls of an opening, such as a via and/or trench opening, in a layer of porous dielectric material, in an integrated circuit structure, is carried out to permit satisfactory lining of all exposed surfaces of the porous dielectric material with a barrier layer which prevents contact between a copper filler and the porous dielectric material, and facilitates filling of the completely lined punctured/ruptured pore with such copper filler to eliminate void formation. The rough edges of the punctured/ruptured pores are removed by an isotropic etch of the exposed walls of the opening. Preferably, the dielectric material in the porous dielectric material is a low k dielectric material.
    • 在集成电路结构中,在多孔介电材料层中的诸如通路和/或沟槽开口的开口的壁上的穿孔或破裂的孔中去除粗糙边缘,以允许所有暴露的 具有阻挡层的多孔电介质材料的表面防止铜填料和多孔电介质材料之间的接触,并且有助于用这种铜填料填充完全衬里的穿孔/破裂孔,以消除空隙形成。 穿孔/破裂的孔的粗糙边缘通过开口的暴露的壁的各向同性蚀刻被去除。 优选地,多孔电介质材料中的电介质材料是低k电介质材料。