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1. 发明授权

US07186574B2 CMP process metrology test structures 有权
标题翻译： CMP过程计量测试结构
公开(公告)号：US07186574B2
公开(公告)日：2007-03-06
申请号：US10956452
申请日：2004-09-30
申请人： Sukhbir Singh Dulay , Thomas L. Leong , John Jaekoyun Yang
发明人： Sukhbir Singh Dulay , Thomas L. Leong , John Jaekoyun Yang
IPC分类号： H01L21/66 , H01L21/461 , H01L21/302 , H01L21/4763 , G01R31/26
CPC分类号： H01L22/34
摘要： A method for forming metrology structures for a CMP process is described. A trench edge is formed in a base material or stack of materials which are preferably deposited as part of the process of fabricating the production structures on the wafer. A covering film of a second material with preferably with contrasting SEM properties is deposited over the trench edge in the base material. During CMP the covering film is preferentially worn away at the edge revealing the base material. The width of the base material which has been revealed is a measure of the progress of the CMP. Since the base material and the covering material are preferably selected to have contrasting images in an SEM, a CD-SEM can be used to precisely measure the CMP progress.
摘要翻译：描述了一种用于形成CMP工艺的计量结构的方法。沟槽边缘形成在材料的基材或堆叠中，其优选作为在晶片上制造生产结构的过程的一部分而沉积。优选具有对比SEM性质的第二材料的覆盖膜沉积在基材中的沟槽边缘上。在CMP期间，覆盖膜优先在露出基材的边缘处磨损掉。已经揭示的基材的宽度是CMP的进展的度量。由于基材和覆盖材料优选选择为在SEM中具有对比图像，所以可以使用CD-SEM来精确测量CMP进展。

2. 发明授权

US07292408B2 Bilayer coil insulation for magnetic write heads to minimize pole recession 有权
标题翻译：用于磁性写头的双层线圈绝缘，以尽量减少极限衰退
公开(公告)号：US07292408B2
公开(公告)日：2007-11-06
申请号：US10903341
申请日：2004-07-30
申请人： Andrew Chiu , Edward Hin Pong Lee , John Jaekoyun Yang , Michael Ming Hsiang Yang , Sue Siyang Zhang
发明人： Andrew Chiu , Edward Hin Pong Lee , John Jaekoyun Yang , Michael Ming Hsiang Yang , Sue Siyang Zhang
IPC分类号： G11B5/17
CPC分类号： G11B5/3163 , G11B5/17 , G11B5/1871
摘要： A magnetic write head for use in a data recording system having first and second magnetic pole, the first pole having a P1 pedestal. An electrically conductive coil passes through a space between the first and second poles for inducing a magnetic flux through the yoke formed by the first and second poles. A bi-layer insulation layer disposed between the poles includes a layer of photoresist for preventing voids and a layer of alumina formed thereover to provide a structural brace to prevent recession of the P1 pedestal during manufacturing operations such as soda blast.
摘要翻译：一种用于具有第一和第二磁极的数据记录系统的磁性写头，所述第一极具有P1基座。导电线圈通过第一和第二极之间的空间，用于引导通过由第一和第二极形成的轭的磁通。设置在极之间的双层绝缘层包括用于防止空隙的光致抗蚀剂层和形成在其上的氧化铝层，以提供结构支架，以防止诸如苏打爆炸的制造操作期间P1基座的凹陷。

3. 发明授权

US07813080B2 Enhanced planarization liftoff structure and method for making the same 有权
标题翻译：增强平面化提升结构及其制作方法
公开(公告)号：US07813080B2
公开(公告)日：2010-10-12
申请号：US11644159
申请日：2006-12-22
申请人： Jeffrey S. Lille , Amanda Baer , John Jaekoyun Yang
发明人： Jeffrey S. Lille , Amanda Baer , John Jaekoyun Yang
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , G11B5/3169 , G11B5/3173
摘要： Systems and methods for enhanced planarization liftoff structures. In accordance with a first method embodiment, a method for manufacturing a pole tip for magnetic recording comprises accessing a wafer comprising a plurality of pole tips and a plurality of pole tip masks corresponding to the plurality of pole tips. Non magnetic material is filled adjacent to the plurality of pole tips. Material adjacent to the plurality of pole tips is etched. Subsequent to the etching, the wafer is planarized to a level equal to or higher than a level of the trailing edges of the plurality of pole tips. The enhanced liftoff structure enables decreased planarization processing, resulting in a decreased process window. As a beneficial result, manufacturing throughput and quality are improved.
摘要翻译：用于增强平面化起飞结构的系统和方法。根据第一方法实施例，一种用于制造用于磁记录的极尖的方法包括访问包括多个极尖的晶片和与多个极尖相对应的多个极尖端掩模。非磁性材料与多个极尖相邻地填充。蚀刻与多个极尖相邻的材料。在蚀刻之后，晶片被平坦化到等于或高于多个极尖的后缘的水平的水平。增强的提升结构使平坦化处理减少，从而减少了处理窗口。作为有益的结果，提高了生产量和质量。

4. 发明授权

US07538035B2 Lapping of gold pads in a liquid medium for work hardening the surface of the pads 有权
标题翻译：在液体介质中研磨金垫，以便对表面进行加工硬化
公开(公告)号：US07538035B2
公开(公告)日：2009-05-26
申请号：US11083808
申请日：2005-03-18
申请人： Ronald Dunham , Wolfgang Goubau , Bhargav Patel , Marvin Wong , John Jaekoyun Yang
发明人： Ronald Dunham , Wolfgang Goubau , Bhargav Patel , Marvin Wong , John Jaekoyun Yang
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： A method for work hardening gold contact pads is disclosed. The method includes providing gold contact pads, providing lapping pads, and placing the lapping pads in contact with the gold contact pads to create a contact interface. A liquid medium is then applied to the contact interface while moving the lapping pads relative to the gold contact pads. The liquid medium is preferably a particulate-free pH neutral liquid, which makes water a good choice. Also disclosed is a gold pad having a work hardened surface.
摘要翻译：公开了一种用于加工硬化接触垫的方法。该方法包括提供金接触垫，提供研磨垫，以及将研磨垫与金接触垫接触以形成接触界面。然后将液体介质施加到接触界面，同时相对于金接触垫移动研磨垫。液体介质优选是无颗粒的pH中性液体，这使得水是不错的选择。还公开了具有加工硬化表面的金垫。

5. 发明授权

US07220167B2 Gentle chemical mechanical polishing (CMP) liftoff process 失效
标题翻译：温和化学机械抛光（CMP）剥离工艺
公开(公告)号：US07220167B2
公开(公告)日：2007-05-22
申请号：US11034340
申请日：2005-01-11
申请人： Jian-Huei Feng , Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
发明人： Jian-Huei Feng , Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
IPC分类号： B24B1/00
CPC分类号： B24B37/24 , B24B37/042 , B24B49/16
摘要： A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.
摘要翻译：一种具有高纵横比表面形貌的化学机械抛光（CMP）晶片的方法。晶片位于板上。抛光垫联接到压板。在抛光垫和晶片之间添加抛光溶液（例如浆料）。通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。抛光垫基本上从通道中去除所有残留的材料。为了实现这一点，抛光垫在约4psi的抛光压力下具有至少5％的压缩率。

6. 发明授权

US07374621B2 System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication 失效
标题翻译：在薄膜磁头晶片制造过程中清洗化学和加工的系统和方法
公开(公告)号：US07374621B2
公开(公告)日：2008-05-20
申请号：US11350643
申请日：2006-02-09
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Jaekoyun Yang
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Jaekoyun Yang
IPC分类号： B08B7/04
CPC分类号： C23G1/26 , G11B5/3163 , G11B5/3169 , Y10S134/902
摘要： A solution of ammonium citrate and benzotriazole (BTA) is used to clean thin film magnetic head wafers. When used with brushing, the solution is a highly efficient process for removing particles, such as those generated during chemical-mechanical polishing (CMP), without causing corrosion and roughness. This process may be used on all CMP layers in thin film magnetic head wafer fabrication.
摘要翻译：柠檬酸铵和苯并三唑（BTA）的溶液用于清洗薄膜磁头晶片。当与刷涂一起使用时，该溶液是用于去除颗粒的高效方法，例如在化学机械抛光（CMP）期间产生的颗粒，而不会引起腐蚀和粗糙度。该方法可用于薄膜磁头晶片制造中的所有CMP层。

7. 发明授权

US07144518B2 CMP for corrosion-free CoFe elements for magnetic heads 有权
标题翻译： CMP用于磁头的无腐蚀CoFe元件
公开(公告)号：US07144518B2
公开(公告)日：2006-12-05
申请号：US10734361
申请日：2003-12-11
申请人： Christopher W. Bergevin , Hung-Chin Guthrie , Tom King Harris, III , Ming Jiang , John Jaekoyun Yang
发明人： Christopher W. Bergevin , Hung-Chin Guthrie , Tom King Harris, III , Ming Jiang , John Jaekoyun Yang
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , B24B37/044 , C09K3/1472
摘要： A method of manufacture of magnetic heads which include CoFe elements using CMP is presented. The method includes providing a slurry of Al2O3, adjusting the concentration of H2O2 in said slurry to within a range of 6–12% by volume and balancing mechanical polishing action. The balancing is done by adjusting the table speed of a mechanical polisher to within a range of 55–90 rpm, and adjusting polishing pressure to within a range of 5–7 psi. Also a magnetic head having elements made of CoFe material made by this method is disclosed.
摘要翻译：提出了使用CMP制造包括CoFe元素的磁头的制造方法。该方法包括提供Al 2 N 3 O 3的浆料，调节所述的二氧化钛的浓度浆料在6-12体积％的范围内，并平衡机械抛光作用。通过将机械抛光机的工作台速度调节到55-90rpm的范围内并且将抛光压力调节到5-7psi的范围内来进行平衡。还公开了一种具有由该方法制成的由CoFe材料制成的元件的磁头。

8. 发明申请

US20080151422A1 Enhanced planarization liftoff structure and method for making the same 有权
标题翻译：增强平面化提升结构及其制作方法
公开(公告)号：US20080151422A1
公开(公告)日：2008-06-26
申请号：US11644159
申请日：2006-12-22
申请人： Jeffrey S. Lille , Amanda Baer , John Jaekoyun Yang
发明人： Jeffrey S. Lille , Amanda Baer , John Jaekoyun Yang
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , G11B5/3169 , G11B5/3173
摘要： Systems and methods for enhanced planarization liftoff structures. In accordance with a first method embodiment, a method for manufacturing a pole tip for magnetic recording comprises accessing a wafer comprising a plurality of pole tips and a plurality of pole tip masks corresponding to the plurality of pole tips. Non magnetic material is filled adjacent to the plurality of pole tips. Material adjacent to the plurality of pole tips is etched. Subsequent to the etching, the wafer is planarized to a level equal to or higher than a level of the trailing edges of the plurality of pole tips. The enhanced liftoff structure enables decreased planarization processing, resulting in a decreased process window. As a beneficial result, manufacturing throughput and quality are improved.
摘要翻译：用于增强平面化起飞结构的系统和方法。根据第一方法实施例，一种用于制造用于磁记录的极尖的方法包括访问包括多个极尖的晶片和与多个极尖相对应的多个极尖端掩模。非磁性材料与多个极尖相邻地填充。蚀刻与多个极尖相邻的材料。在蚀刻之后，晶片被平坦化到等于或高于多个极尖的后缘的水平的水平。增强的提升结构使平坦化处理减少，从而减少了处理窗口。作为有益的结果，提高了生产量和质量。

9. 发明授权

US07287314B2 One step copper damascene CMP process and slurry 失效
标题翻译：一步铜镶嵌CMP工艺和浆料
公开(公告)号：US07287314B2
公开(公告)日：2007-10-30
申请号：US10789777
申请日：2004-02-27
申请人： Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
发明人： Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
IPC分类号： G11B5/17 , H01L21/461
CPC分类号： H01L21/3212 , C23F3/04 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful for obtaining a substantially planar surface of several materials while avoiding corrosion of Cu coil and NiFe structure.
摘要翻译：化学机械抛光（CMP）工艺和浆料，因此能够以基本相同的速率去除NiFe，SiO 2，光致抗蚀剂，Ta，氧化铝和Cu。该浆料可用于获得几种材料的基本平坦的表面，同时避免Cu线圈和NiFe结构的腐蚀。

10. 发明授权

US07035047B2 Magnetic recording heads having thin thermally conductive undercoating 失效
标题翻译：具有薄导热底涂层的磁记录头
公开(公告)号：US07035047B2
公开(公告)日：2006-04-25
申请号：US10271293
申请日：2002-10-15
申请人： Wen-Chien Hsiao , Peter Beverley Powell Phipps , Yong Shen , John Jaekoyun Yang , Samuel Wei-san Yuan
发明人： Wen-Chien Hsiao , Peter Beverley Powell Phipps , Yong Shen , John Jaekoyun Yang , Samuel Wei-san Yuan
IPC分类号： G11B5/147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/11 , G11B5/3103 , G11B5/3106 , G11B5/3133 , G11B5/3136 , G11B5/332 , G11B5/3967 , G11B5/40 , G11B2005/3996
摘要： A magnetic head having read and write elements is provided according to one embodiment. The head includes a substrate. An undercoating is coupled to the substrate. The undercoating has a preferred thickness of between about 1.5 and 0.5 microns or less in a direction perpendicular to the planar surface of the substrate engaging the undercoating. Preferably, the undercoating is reduced to a desired thickness during fabrication using chemical mechanical polishing. The undercoating is constructed of a material having a thermal conductivity greater than that of amorphous Al2O3. An electric contact pad is operatively coupled to a layer positioned between the pad and the undercoating. Electric contact pads of read and write elements are preferably separated from the undercoating by insulation planarization layers. A write element is coupled to the undercoating. The write element has an electrically conductive coil. The new thinner and more thermally conductive undercoating allows more heat to transfer through it from the write element to the substrate.
摘要翻译：根据一个实施例，提供具有读和写元件的磁头。头包括基底。底涂层与基底结合。底涂层在垂直于与底涂层接触的基材的平坦表面的方向上具有约1.5至0.5微米或更小的优选厚度。优选地，在使用化学机械抛光的制造期间，底涂层被还原成所需的厚度。底涂层由热导率大于无定形Al 2 O 3 3的材料构成。电接触垫可操作地耦合到位于垫和底涂层之间的层。读取和写入元件的电接触焊盘优选通过绝缘平坦化层与底涂层分离。写入元件耦合到底涂层。写入元件具有导电线圈。新的更薄且更热导热的底涂层允许更多的热量从写入元件转移到衬底。

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