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    • 1. 发明授权
    • CMP process metrology test structures
    • CMP过程计量测试结构
    • US07186574B2
    • 2007-03-06
    • US10956452
    • 2004-09-30
    • Sukhbir Singh DulayThomas L. LeongJohn Jaekoyun Yang
    • Sukhbir Singh DulayThomas L. LeongJohn Jaekoyun Yang
    • H01L21/66H01L21/461H01L21/302H01L21/4763G01R31/26
    • H01L22/34
    • A method for forming metrology structures for a CMP process is described. A trench edge is formed in a base material or stack of materials which are preferably deposited as part of the process of fabricating the production structures on the wafer. A covering film of a second material with preferably with contrasting SEM properties is deposited over the trench edge in the base material. During CMP the covering film is preferentially worn away at the edge revealing the base material. The width of the base material which has been revealed is a measure of the progress of the CMP. Since the base material and the covering material are preferably selected to have contrasting images in an SEM, a CD-SEM can be used to precisely measure the CMP progress.
    • 描述了一种用于形成CMP工艺的计量结构的方法。 沟槽边缘形成在材料的基材或堆叠中,其优选作为在晶片上制造生产结构的过程的一部分而沉积。 优选具有对比SEM性质的第二材料的覆盖膜沉积在基材中的沟槽边缘上。 在CMP期间,覆盖膜优先在露出基材的边缘处磨损掉。 已经揭示的基材的宽度是CMP的进展的度量。 由于基材和覆盖材料优选选择为在SEM中具有对比图像,所以可以使用CD-SEM来精确测量CMP进展。