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1. 发明授权

US07374621B2 System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication 失效
标题翻译：在薄膜磁头晶片制造过程中清洗化学和加工的系统和方法
公开(公告)号：US07374621B2
公开(公告)日：2008-05-20
申请号：US11350643
申请日：2006-02-09
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Jaekoyun Yang
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Jaekoyun Yang
IPC分类号： B08B7/04
CPC分类号： C23G1/26 , G11B5/3163 , G11B5/3169 , Y10S134/902
摘要： A solution of ammonium citrate and benzotriazole (BTA) is used to clean thin film magnetic head wafers. When used with brushing, the solution is a highly efficient process for removing particles, such as those generated during chemical-mechanical polishing (CMP), without causing corrosion and roughness. This process may be used on all CMP layers in thin film magnetic head wafer fabrication.
摘要翻译：柠檬酸铵和苯并三唑（BTA）的溶液用于清洗薄膜磁头晶片。当与刷涂一起使用时，该溶液是用于去除颗粒的高效方法，例如在化学机械抛光（CMP）期间产生的颗粒，而不会引起腐蚀和粗糙度。该方法可用于薄膜磁头晶片制造中的所有CMP层。

2. 发明授权

US07220167B2 Gentle chemical mechanical polishing (CMP) liftoff process 失效
标题翻译：温和化学机械抛光（CMP）剥离工艺
公开(公告)号：US07220167B2
公开(公告)日：2007-05-22
申请号：US11034340
申请日：2005-01-11
申请人： Jian-Huei Feng , Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
发明人： Jian-Huei Feng , Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
IPC分类号： B24B1/00
CPC分类号： B24B37/24 , B24B37/042 , B24B49/16
摘要： A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.
摘要翻译：一种具有高纵横比表面形貌的化学机械抛光（CMP）晶片的方法。晶片位于板上。抛光垫联接到压板。在抛光垫和晶片之间添加抛光溶液（例如浆料）。通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。抛光垫基本上从通道中去除所有残留的材料。为了实现这一点，抛光垫在约4psi的抛光压力下具有至少5％的压缩率。

3. 发明授权

US07144518B2 CMP for corrosion-free CoFe elements for magnetic heads 有权
标题翻译： CMP用于磁头的无腐蚀CoFe元件
公开(公告)号：US07144518B2
公开(公告)日：2006-12-05
申请号：US10734361
申请日：2003-12-11
申请人： Christopher W. Bergevin , Hung-Chin Guthrie , Tom King Harris, III , Ming Jiang , John Jaekoyun Yang
发明人： Christopher W. Bergevin , Hung-Chin Guthrie , Tom King Harris, III , Ming Jiang , John Jaekoyun Yang
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , B24B37/044 , C09K3/1472
摘要： A method of manufacture of magnetic heads which include CoFe elements using CMP is presented. The method includes providing a slurry of Al2O3, adjusting the concentration of H2O2 in said slurry to within a range of 6–12% by volume and balancing mechanical polishing action. The balancing is done by adjusting the table speed of a mechanical polisher to within a range of 55–90 rpm, and adjusting polishing pressure to within a range of 5–7 psi. Also a magnetic head having elements made of CoFe material made by this method is disclosed.
摘要翻译：提出了使用CMP制造包括CoFe元素的磁头的制造方法。该方法包括提供Al 2 N 3 O 3的浆料，调节所述的二氧化钛的浓度浆料在6-12体积％的范围内，并平衡机械抛光作用。通过将机械抛光机的工作台速度调节到55-90rpm的范围内并且将抛光压力调节到5-7psi的范围内来进行平衡。还公开了一种具有由该方法制成的由CoFe材料制成的元件的磁头。

4. 发明授权

US07287314B2 One step copper damascene CMP process and slurry 失效
标题翻译：一步铜镶嵌CMP工艺和浆料
公开(公告)号：US07287314B2
公开(公告)日：2007-10-30
申请号：US10789777
申请日：2004-02-27
申请人： Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
发明人： Hung-Chin Guthrie , Ming Jiang , John Jaekoyun Yang
IPC分类号： G11B5/17 , H01L21/461
CPC分类号： H01L21/3212 , C23F3/04 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful for obtaining a substantially planar surface of several materials while avoiding corrosion of Cu coil and NiFe structure.
摘要翻译：化学机械抛光（CMP）工艺和浆料，因此能够以基本相同的速率去除NiFe，SiO 2，光致抗蚀剂，Ta，氧化铝和Cu。该浆料可用于获得几种材料的基本平坦的表面，同时避免Cu线圈和NiFe结构的腐蚀。

5. 发明授权

US06984613B1 Post chemical mechanical polishing cleaning solution for 2.45T CoFeNi structures of thin film magnetic heads 失效
标题翻译：用于2.45T薄膜磁头的CoFeNi结构的化学机械抛光清洗溶液
公开(公告)号：US06984613B1
公开(公告)日：2006-01-10
申请号：US10931385
申请日：2004-08-31
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
IPC分类号： C11D17/00
CPC分类号： C11D3/0073 , C11D9/007 , C11D9/30 , C11D11/0047
摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.1% to 10% by volume of the cleaning solution.
摘要翻译：本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）。本发明的氧化铝填充物中的CoFeNi结构的清洗液优选含有浓度范围为1％〜5％的4-甲基-1H-苯并三唑，浓度范围为1％〜5％的5-甲基-1H-苯并三唑 5％的浓度范围为1％至5％的氢化的4-甲基-1H-苯并三唑，浓度范围为1％至5％的氢化的5-甲基-1H-苯并三唑，浓度范围为 5％至10％，浓度范围为65％至95％的水。清洁溶液通常与去离子水一起使用以产生具有0.1至10体积％范围的清洁溶液的施用溶液。

6. 发明申请

US20060042173A1 Chemical mechanical polishing process for 2.45T CoFeNi structures of thin film magnetic heads 失效
标题翻译： 2.45T CoFeNi薄膜磁头结构的化学机械抛光工艺
公开(公告)号：US20060042173A1
公开(公告)日：2006-03-02
申请号：US10931846
申请日：2004-08-31
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
IPC分类号： B24D3/02 , B24B7/30 , C09C1/68
CPC分类号： C09K3/1463 , C09G1/02
摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2) in a concentration working range of 4% to 12%. In a preferred embodiment the H2O2 concentration is approximately 6% and the pH is approximately 4.0 at polishing pressure 6 psi. A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole, 5-Methyl-1H-Benzotriazole, hydrogenated 4-Methyl-1H-Benzotriazole, hydrogenated 5-Methyl-1H-Benzotriazole, sodium octanoate, and water.
摘要翻译：本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨料颗粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）浓度范围为4％〜12％。在优选的实施方案中，在抛光压力6psi下，H 2 O 2 O 2浓度为约6％，pH为约4.0。本发明的氧化铝填充物中的CoFeNi结构的清洗液优选包括4-甲基-1H-苯并三唑，5-甲基-1H-苯并三唑，氢化的4-甲基-1H-苯并三唑，氢化的5-甲基-1H-苯并三唑，钠辛酸盐和水。

7. 发明授权

US07306638B2 Chemical mechanical polishing process for 2.45T CoFeNi structures of thin film magnetic heads 失效
标题翻译： 2.45T CoFeNi薄膜磁头结构的化学机械抛光工艺
公开(公告)号：US07306638B2
公开(公告)日：2007-12-11
申请号：US10931846
申请日：2004-08-31
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： C09K3/1463 , C09G1/02
摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2) in a concentration working range of 4% to 12%. In a preferred embodiment the H2O2 concentration is approximately 6% and the pH is approximately 4.0 at polishing pressure 6 psi. A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole, 5-Methyl-1H-Benzotriazole, hydrogenated 4-Methyl-1H-Benzotriazole, hydrogenated 5-Methyl-1H-Benzotriazole, sodium octanoate, and water.
摘要翻译：本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨料颗粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）浓度范围为4％〜12％。在优选的实施方案中，在抛光压力6psi下，H 2 O 2 O 2浓度为约6％，pH为约4.0。本发明的氧化铝填充物中的CoFeNi结构的清洗液优选包括4-甲基-1H-苯并三唑，5-甲基-1H-苯并三唑，氢化的4-甲基-1H-苯并三唑，氢化的5-甲基-1H-苯并三唑，钠辛酸盐和水。

8. 发明申请

US20070181151A1 System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication 失效
标题翻译：在薄膜磁头晶片制造过程中清洗化学和加工的系统和方法
公开(公告)号：US20070181151A1
公开(公告)日：2007-08-09
申请号：US11350643
申请日：2006-02-09
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Yang
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Yang
IPC分类号： C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： C23G1/26 , G11B5/3163 , G11B5/3169 , Y10S134/902
摘要： A solution of ammonium citrate and benzotriazole (BTA) is used to clean thin film magnetic head wafers. When used with brushing, the solution is a highly efficient process for removing particles, such as those generated during chemical-mechanical polishing (CMP), without causing corrosion and roughness. This process may be used on all CMP layers in thin film magnetic head wafer fabrication.
摘要翻译：柠檬酸铵和苯并三唑（BTA）的溶液用于清洗薄膜磁头晶片。当与刷涂一起使用时，该溶液是用于去除颗粒的高效方法，例如在化学机械抛光（CMP）期间产生的颗粒，而不会引起腐蚀和粗糙度。该方法可用于薄膜磁头晶片制造中的所有CMP层。

9. 发明授权

US07804662B2 Perpendicular magnetic recording head including wrap around shield with notched top write gap and method of fabricating the same 有权
标题翻译：垂直磁记录头包括带有凹口顶部写入间隙的屏蔽罩及其制造方法
公开(公告)号：US07804662B2
公开(公告)日：2010-09-28
申请号：US11645390
申请日：2006-12-26
申请人： Tsung Yuan Chen , Hung-Chin Guthrie , Yimin Hsu , Ming Jiang
发明人： Tsung Yuan Chen , Hung-Chin Guthrie , Yimin Hsu , Ming Jiang
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163
摘要： In a perpendicular recording head, a notch is formed in the top write gap at a location on top of the main pole. A perpendicular head with this notched top write gap structure has less transition curvature and better writability while reducing the adjacent track interference (ATI). Also, the process used to fabricate the head ensures that the trailing edge (writing edge) of the main pole is extremely flat with no corner rounding.
摘要翻译：在垂直记录头中，在主极顶部的位置处，在顶部写入间隙中形成凹口。具有该切口顶部写入间隙结构的垂直头部具有较小的转变曲率和较好的可编写性，同时减小了相邻的轨道干涉（ATI）。此外，用于制造头的过程确保主极的后缘（书写边缘）非常平坦，没有圆角。

10. 发明授权

US07722436B2 Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model 有权
标题翻译：基于中心到边缘模型的用于CMP径向均匀性优化的背侧压力的运行控制控制
公开(公告)号：US07722436B2
公开(公告)日：2010-05-25
申请号：US11832455
申请日：2007-08-01
申请人： Hung-Chin Guthrie , Ming Jiang , Yeak-Chong Wong
发明人： Hung-Chin Guthrie , Ming Jiang , Yeak-Chong Wong
IPC分类号： B24B49/00
CPC分类号： B24B49/03 , B24B37/042
摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.
摘要翻译：在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“后侧压力”的化学机械抛光的参数。背面压力在一些实施例中通过基于中心到边缘轮廓模型，模型的确定系数R平方和背侧压力的当前值。注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。如R平方所示大于预定极限。接下来，将从模型确定的背面压力用于平面化后续晶片。

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