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1. 发明授权

US06521844B1 Through hole in a photoimageable dielectric structure with wired and uncured dielectric 失效
标题翻译：透光电介质结构中的通孔，有线和未固化电介质
公开(公告)号：US06521844B1
公开(公告)日：2003-02-18
申请号：US09430076
申请日：1999-10-29
申请人： Stephen J. Fuerniss , Gary Johansson , Ross W. Keesler , John M. Lauffer , Voya R. Markovich , Peter A. Moschak , David J. Russell , William E. Wilson
发明人： Stephen J. Fuerniss , Gary Johansson , Ross W. Keesler , John M. Lauffer , Voya R. Markovich , Peter A. Moschak , David J. Russell , William E. Wilson
IPC分类号： H05K100
CPC分类号： H05K3/0023 , H05K1/056 , H05K3/445 , H05K3/4641 , H05K2203/1476 , Y10T29/49165
摘要： An electronic structure. The electronic structure comprises a layer. The layer includes: a cylindrical volume; a fully cured annular volume of a photoimageable dielectric (PID) material circumscribing the cylindrical volume; and a partially cured remaining volume of the PID material circumscribing the annular volume. The cylindrical volume may include a via. The structure can include a power plane.
摘要翻译：电子结构。电子结构包括一层。该层包括：圆柱体积; 完全固化的圆环体积的环绕光学成像的电介质（PID）材料; 以及围绕环形体积的PID材料的部分固化的剩余容积。圆柱体积可以包括通孔。该结构可以包括电力平面。

2. 发明授权

US06830875B2 Forming a through hole in a photoimageable dielectric structure 失效
标题翻译：在可光成像的电介质结构中形成通孔
公开(公告)号：US06830875B2
公开(公告)日：2004-12-14
申请号：US10266020
申请日：2002-10-07
申请人： Stephen J. Fuerniss , Gary Johansson , Ross W. Keesler , John M. Lauffer , Voya R. Markovich , Peter A. Moschak , David J. Russell , William E. Wilson
发明人： Stephen J. Fuerniss , Gary Johansson , Ross W. Keesler , John M. Lauffer , Voya R. Markovich , Peter A. Moschak , David J. Russell , William E. Wilson
IPC分类号： G03F700
CPC分类号： H05K3/0023 , H05K1/056 , H05K3/445 , H05K3/4641 , H05K2203/1476 , Y10T29/49165
摘要： A method for forming an electronic structure. Provides is a layer that includes a cylindrical volume of a photoimageable dielectric (PID) material, an annular volume of the PID material circumscribing the cylindrical volume, and a remaining volume of the PID material circumscribing the annular volume. The layer is photolithograhically exposed to radiation. The annular volume is fully cured by the radiation. The remaining volume is partially cured by the remaining volume by said radiation. The method prevents curing of the cylindrical volume, wherein the PID material in the cylindrical volume remains uncured.
摘要翻译：一种形成电子结构的方法。提供是包括可光成像电介质（PID）材料的圆柱体积，围绕圆柱体积的PID材料的环形体积以及围绕环形体积的PID材料的剩余体积的层。该层被光刻地暴露于辐射。环形体积被辐射完全固化。剩余体积由所述辐射的剩余体积部分固化。该方法防止圆柱体积的固化，其中圆柱体积中的PID材料保持未固化。

3. 发明授权

US06391210B2 Process for manufacturing a multi-layer circuit board 失效
标题翻译：制造多层电路板的工艺
公开(公告)号：US06391210B2
公开(公告)日：2002-05-21
申请号：US09901848
申请日：2001-07-09
申请人： Bernd K. Appelt , John M. Lauffer , Voya R. Markovich , Irving Memis , David J. Russell
发明人： Bernd K. Appelt , John M. Lauffer , Voya R. Markovich , Irving Memis , David J. Russell
IPC分类号： H01B1300
CPC分类号： H05K3/4652 , H05K3/0023 , H05K3/0035 , H05K2203/0508 , H05K2203/0554
摘要： A circuit board having a structure including a permanent photoimageable dielectric material suitable for fabrication of vias both by laser ablation, plasma ablation, or mechanical drilling techniques and by photoimaging techniques. A process is also disclosed for the manufacture of a multi-level circuit on a substrate having a first-level circuitry pattern on at least one side. The process comprises applying a permanent photoimageable dielectric over the first-level circuitry pattern; exposing the permanent photoimageable dielectric to radiation; laminating a conductive metal layer to the dielectric; making holes in the conductive metal layer and dielectric by mechanical drilling or by laser or plasma ablation; and making a second-level circuitry pattern and filling the holes with a conductive material to electrically connect the first and second layers of circuitry. A further process is claimed for designing a multi-level circuit board product comprising making a prototype having the above structure in which the holes are manufactured by mechanical drilling or by laser or plasma ablation, evaluating the prototype, and then manufacturing a commercial circuit board having essentially the same structure and materials of construction as the prototype, but wherein the holes are manufactured by photoimaging techniques.
摘要翻译：一种电路板，其结构包括适用于通过激光烧蚀，等离子体消融或机械钻孔技术制造通孔的永久可光成像介电材料，以及通过光成像技术。还公开了一种用于在至少一侧具有第一级电路图案的衬底上制造多电平电路的工艺。该过程包括在第一级电路图案上施加永久可光成像电介质; 将永久可光成像电介质暴露于辐射; 将导电金属层层叠到电介质上; 通过机械钻孔或通过激光或等离子体消融在导电金属层和电介质中形成孔; 以及制作二级电路图案，并用导电材料填充所述孔，以电连接所述第一和第二层电路。要求设计多级电路板产品的另一方法包括制造具有上述结构的原型，其中通过机械钻孔或通过激光或等离子体烧蚀制造孔，评估原型，然后制造商业电路板，其具有基本上与原型相同的结构和结构材料，但是其中孔通过光成像技术制造。

4. 发明授权

US06290860B1 Process for design and manufacture of fine line circuits on planarized thin film dielectrics and circuits manufactured thereby 有权
标题翻译：在平面化薄膜电介质和由此制造的电路上设计和制造细线电路的方法
公开(公告)号：US06290860B1
公开(公告)日：2001-09-18
申请号：US09283679
申请日：1999-04-01
申请人： Bernd K. Appelt , John M. Lauffer , Voya R. Markovich , Irving Memis , David J. Russell
发明人： Bernd K. Appelt , John M. Lauffer , Voya R. Markovich , Irving Memis , David J. Russell
IPC分类号： H01B1300
CPC分类号： H05K3/4652 , H05K3/0023 , H05K3/0035 , H05K2203/0508 , H05K2203/0554
摘要： A circuit board having a structure including a permanent photoimageable dielectric material suitable for fabrication of vias both by laser ablation, plasma ablation, or mechanical drilling techniques and by photoimaging techniques. A process is also disclosed for the manufacture of a multi-level circuit on a substrate having a first-level circuitry pattern on at least one side. The process comprises applying a permanent photoimageable dielectric over the first-level circuitry pattern; exposing the permanent photoimageable dielectric to radiation; laminating a conductive metal layer to the dielectric; making holes in the conductive metal layer and dielectric by mechanical drilling or by laser or plasma ablation; and making a second-level circuitry pattern and filling the holes with a conductive material to electrically connect the first and second layers of circuitry. A further process is claimed for designing a multi-level circuit board product comprising making a prototype having the above structure in which the holes are manufactured by mechanical drilling or by laser or plasma ablation, evaluating the prototype, and then manufacturing a commercial circuit board having essentially the same structure and materials of construction as the prototype, but wherein the holes are manufactured by photoimaging techniques.
摘要翻译：一种电路板，其结构包括适用于通过激光烧蚀，等离子体消融或机械钻孔技术制造通孔的永久可光成像介电材料，以及通过光成像技术。还公开了一种用于在至少一侧具有第一级电路图案的衬底上制造多电平电路的工艺。该过程包括在第一级电路图案上施加永久可光成像电介质; 将永久可光成像电介质暴露于辐射; 将导电金属层层叠到电介质上; 通过机械钻孔或通过激光或等离子体消融在导电金属层和电介质中形成孔; 以及制作二级电路图案，并用导电材料填充所述孔，以电连接所述第一和第二层电路。要求设计多级电路板产品的另一方法包括制造具有上述结构的原型，其中通过机械钻孔或通过激光或等离子体烧蚀制造孔，评估原型，然后制造商业电路板，其具有基本上与原型相同的结构和结构材料，但是其中孔通过光成像技术制造。

5. 发明授权

US6121069A Interconnect structure for joining a chip to a circuit card 有权
标题翻译：用于将芯片连接到电路卡的互连结构
公开(公告)号：US6121069A
公开(公告)日：2000-09-19
申请号：US390084
申请日：1999-09-03
申请人： Christina M. Boyko , Anthony P. Ingraham , Voya R. Markovich , David J. Russell
发明人： Christina M. Boyko , Anthony P. Ingraham , Voya R. Markovich , David J. Russell
IPC分类号： H01L21/60 , H01L23/485 , H05K3/34 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L24/10 , H01L24/13 , H01L24/81 , H05K3/3436 , H01L2224/13 , H01L2224/13023 , H01L2224/13099 , H01L2224/13111 , H01L2224/13609 , H01L2224/16 , H01L2224/16225 , H01L2224/274 , H01L2224/81801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K2203/0435 , H05K2203/073 , H05K3/3463 , Y02P70/613
摘要： A solder interconnection uses preferably lead-rich balls for making a low temperature chip attachment directly to any of the higher levels of packaging substrate. After a solder ball has been formed using standard processes, a ball limiting metal mask is formed using photoresist. A thin cap layer of preferably pure tin is deposited on a surface of the solder balls using a tin aqueous immersion process.
摘要翻译：焊料互连优选地使用富铅球，以将低温芯片附接到任何更高级别的封装衬底上。在使用标准工艺形成焊球之后，使用光致抗蚀剂形成球限制金属掩模。使用锡水溶液浸渍法将优选纯锡的薄盖层沉积在焊球的表面上。

6. 发明授权

US5953623A Ball limiting metal mask and tin enrichment of high melting point solder for low temperature interconnection 失效
标题翻译：用于低温互连的高熔点焊料的极限金属掩模和锡富集
公开(公告)号：US5953623A
公开(公告)日：1999-09-14
申请号：US835690
申请日：1997-04-10
申请人： Christina M. Boyko , Anthony P. Ingraham , Voya R. Markovich , David J. Russell
发明人： Christina M. Boyko , Anthony P. Ingraham , Voya R. Markovich , David J. Russell
IPC分类号： H01L21/60 , H01L23/485 , H05K3/34 , H01L21/44
CPC分类号： H01L24/10 , H01L24/13 , H01L24/81 , H05K3/3436 , H01L2224/13 , H01L2224/13023 , H01L2224/13099 , H01L2224/13111 , H01L2224/13609 , H01L2224/16 , H01L2224/16225 , H01L2224/274 , H01L2224/81801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K2203/0435 , H05K2203/073 , H05K3/3463 , Y02P70/613
摘要： A solder interconnection uses preferably lead-rich balls for making a low temperature chip attachment directly to any of the higher levels of packaging substrate. After a solder ball has been formed using standard processes, a ball limiting metal mask is formed using photoresist. A thin cap layer of preferably pure tin is deposited on a surface of the solder balls using a tin aqueous immersion process.
摘要翻译：焊料互连优选地使用富铅球，以将低温芯片附接到任何更高级别的封装衬底上。在使用标准工艺形成焊球之后，使用光致抗蚀剂形成球限制金属掩模。使用锡水溶液浸渍法将优选纯锡的薄盖层沉积在焊球的表面上。

7. 发明授权

US06522014B1 Fabrication of a metalized blind via 有权
标题翻译：金属化盲孔的制造
公开(公告)号：US06522014B1
公开(公告)日：2003-02-18
申请号：US09670968
申请日：2000-09-27
申请人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , David E. Houser , Mark L. Janecek , Thomas E. Kindl , Jeffrey A. Knight , Stephen W. MacQuarrie , Voya R. Markovich , Luis J. Matienzo , Amarjit S. Rai , David J. Russell , William T. Wike
发明人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , David E. Houser , Mark L. Janecek , Thomas E. Kindl , Jeffrey A. Knight , Stephen W. MacQuarrie , Voya R. Markovich , Luis J. Matienzo , Amarjit S. Rai , David J. Russell , William T. Wike
IPC分类号： H01L2348
CPC分类号： H01L21/486 , H01L23/49827 , H01L2224/16225 , H05K3/0032 , H05K3/0035 , H05K3/424 , H05K2201/0323 , H05K2203/1136
摘要： A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, then the blind via may have any cross-sectional shape, such as circular or non-circular, a rectangular channel, or a combination thereof.
摘要翻译：用于形成金属化盲孔的方法和结构。在金属层上形成电介质层，随后在电介质层中激光钻出凹陷，使得在凹陷的侧壁上形成包含碳的碳膜。如果激光钻孔不暴露金属层，则可以使用诸如反应离子蚀刻（RIE）的各向异性等离子体蚀刻来清洁和暴露金属层的表面。电介质层包括具有碳基聚合物材料的介电材料，例如永久性光致抗蚀剂，聚酰亚胺和先进的焊接掩模（ASM）。金属层包括金属材料，例如铜，铝和金。碳膜与金属层导电接触，并且碳膜具有足够的导电性，以允许直接在碳膜上电镀连续的金属层（例如铜），而不需要在电镀层下面的无电镀层。激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。凹陷可以具有任何横截面形状和深度的任何空间分布。作为示例，凹陷可以包括盲孔，则盲孔可以具有任何横截面形状，例如圆形或非圆形，矩形通道或其组合。

8. 发明授权

US06576549B2 Fabrication of a metalized blind via 失效
标题翻译：金属化盲孔的制造
公开(公告)号：US06576549B2
公开(公告)日：2003-06-10
申请号：US10282275
申请日：2002-10-28
申请人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , David E. Houser , Mark L. Janecek , Thomas E. Kindl , Jeffrey A. Knight , Stephen W. MacQuarrie , Voya R. Markovich , Luis J. Matienzo , Amarjit S. Rai , David J. Russell , William T. Wike
发明人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , David E. Houser , Mark L. Janecek , Thomas E. Kindl , Jeffrey A. Knight , Stephen W. MacQuarrie , Voya R. Markovich , Luis J. Matienzo , Amarjit S. Rai , David J. Russell , William T. Wike
IPC分类号： H01L2131
CPC分类号： H01L21/486 , H01L23/49827 , H01L2224/16225 , H05K3/0032 , H05K3/0035 , H05K3/424 , H05K2201/0323 , H05K2203/1136
摘要： A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer includes a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, a rectangular channel, or a combination thereof.
摘要翻译：用于形成金属化盲孔的方法和结构。在金属层上形成电介质层，随后在电介质层中激光钻出凹陷，使得在凹陷的侧壁上形成包含碳的碳膜。如果激光钻孔不暴露金属层，则可以使用诸如反应离子蚀刻（RIE）的各向异性等离子体蚀刻来清洁和暴露金属层的表面。电介质层包括具有碳基聚合物材料的电介质材料，例如永久性光致抗蚀剂，聚酰亚胺和高级阻焊剂（ASM）。金属层包括金属材料，例如铜，铝和金。碳膜与金属层导电接触，并且碳膜具有足够的导电性，以允许直接在碳膜上电镀连续的金属层（例如铜），而不需要在电镀层下面的无电镀层。激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。凹陷可以具有任何横截面形状和深度的任何空间分布。作为示例，凹陷可以包括盲孔，矩形通道或其组合。

9. 发明授权

US06519843B2 Method of forming a chip carrier by joining a laminate layer and stiffener 失效
标题翻译：通过接合层压层和加强件形成芯片载体的方法
公开(公告)号：US06519843B2
公开(公告)日：2003-02-18
申请号：US09772418
申请日：2001-01-30
申请人： John M. Lauffer , Heike Marcello , David J. Russell
发明人： John M. Lauffer , Heike Marcello , David J. Russell
IPC分类号： H05K334
CPC分类号： H05K3/0061 , H01L21/4803 , H01L23/36 , H01L2924/0002 , H05K1/183 , H05K3/0023 , H05K3/386 , Y10T29/49126 , Y10T29/4913 , Y10T29/49131 , Y10T29/49144 , Y10T29/49155 , Y10T29/53178 , Y10T156/1798 , H01L2924/00
摘要： A cavity-type chip module. The module is formed with an adhesive joining layer of photoimageable material interposed between a metal stiffener and a laminate top layer with a central aperture defined in the top layer. The photoimageable material is exposed to actinic radiation, except for an area corresponding to the aperture in the top layer. The unexposed area of photoimageable material is developed away to form a window in the joining layer. The top layer, joining layer, and stiffener are laminated together with the window and aperture aligned, and with a portion of the stiffener spanning the aperture to define a cavity in the resulting substrate. The removal of the unexposed photoimageable material, and the selective exposure of the joining layer to actinic radiation, keep the cavity free of photoimageable material and inhibit bleeding of the photoimageable material into the cavity from its inner edge. As a result, a semiconductor component can be flush mounted in the cavity with optimal thermal conductivity to the metal stiffener.
摘要翻译：腔型芯片模块。该模块形成有介于金属加强件和层压顶层之间的可光成像材料的粘合剂接合层，中间孔限定在顶层中。可光成像材料暴露于光化辐射，除了与顶层中的孔相对应的区域之外。可光成像材料的未曝光区域被开发出来以在接合层中形成窗口。将顶层，接合层和加强件层压在一起，窗口和孔对齐，并且加强件的一部分跨越孔以在所得到的基底中限定空腔。未曝光的可光成像材料的去除以及将接合层选择性地暴露于光化辐射，保持空腔不含可光成像的材料并且抑制可光成像材料从其内边缘渗入空腔。结果，半导体部件可以齐平地安装在空腔中，对金属加强件具有最佳的导热性。

10. 发明授权

US06689543B2 Laser ablatable material and its use 失效
标题翻译：激光可烧蚀材料及其用途
公开(公告)号：US06689543B2
公开(公告)日：2004-02-10
申请号：US10073558
申请日：2002-02-11
申请人： John S. Kresge , John M. Lauffer , David J. Russell
发明人： John S. Kresge , John M. Lauffer , David J. Russell
IPC分类号： G03C556
CPC分类号： H05K3/0032 , B23K2103/42 , B23K2103/50 , B41M5/24 , H05K1/0326 , H05K1/0373 , H05K2201/0112 , Y10S430/146
摘要： An epoxy based resin which exhibits good laser ablation and good adherence to a substrate such a copper is provided by adding to the resin a dye or dyes having substantial energy absorption at the emission wave lengths of lasers used to laser ablate the resin. The resin with the dye or dyes included is coated onto a substrate and cured, or laminated onto a substrate in the cured condition. The required openings are formed in the cured film by laser ablation. This allows for the use of optimum techniques to be used to form micro vias.
摘要翻译：通过向树脂中添加染料或染料，在用于激光烧蚀树脂的激光器的发射波长处具有显着的能量吸收，提供了表现出良好的激光烧蚀和对衬底的良好粘合性的环氧树脂。将含有染料或染料的树脂涂覆在基材上并固化，或在固化条件下层压到基材上。通过激光烧蚀在所述固化膜中形成所需的开口。这允许使用最佳技术来形成微通孔。

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