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1. 发明授权

US06522014B1 Fabrication of a metalized blind via 有权
标题翻译：金属化盲孔的制造
公开(公告)号：US06522014B1
公开(公告)日：2003-02-18
申请号：US09670968
申请日：2000-09-27
申请人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , David E. Houser , Mark L. Janecek , Thomas E. Kindl , Jeffrey A. Knight , Stephen W. MacQuarrie , Voya R. Markovich , Luis J. Matienzo , Amarjit S. Rai , David J. Russell , William T. Wike
发明人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , David E. Houser , Mark L. Janecek , Thomas E. Kindl , Jeffrey A. Knight , Stephen W. MacQuarrie , Voya R. Markovich , Luis J. Matienzo , Amarjit S. Rai , David J. Russell , William T. Wike
IPC分类号： H01L2348
CPC分类号： H01L21/486 , H01L23/49827 , H01L2224/16225 , H05K3/0032 , H05K3/0035 , H05K3/424 , H05K2201/0323 , H05K2203/1136
摘要： A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, then the blind via may have any cross-sectional shape, such as circular or non-circular, a rectangular channel, or a combination thereof.
摘要翻译：用于形成金属化盲孔的方法和结构。在金属层上形成电介质层，随后在电介质层中激光钻出凹陷，使得在凹陷的侧壁上形成包含碳的碳膜。如果激光钻孔不暴露金属层，则可以使用诸如反应离子蚀刻（RIE）的各向异性等离子体蚀刻来清洁和暴露金属层的表面。电介质层包括具有碳基聚合物材料的介电材料，例如永久性光致抗蚀剂，聚酰亚胺和先进的焊接掩模（ASM）。金属层包括金属材料，例如铜，铝和金。碳膜与金属层导电接触，并且碳膜具有足够的导电性，以允许直接在碳膜上电镀连续的金属层（例如铜），而不需要在电镀层下面的无电镀层。激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。凹陷可以具有任何横截面形状和深度的任何空间分布。作为示例，凹陷可以包括盲孔，则盲孔可以具有任何横截面形状，例如圆形或非圆形，矩形通道或其组合。

2. 发明授权

US06576549B2 Fabrication of a metalized blind via 失效
标题翻译：金属化盲孔的制造
公开(公告)号：US06576549B2
公开(公告)日：2003-06-10
申请号：US10282275
申请日：2002-10-28
申请人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , David E. Houser , Mark L. Janecek , Thomas E. Kindl , Jeffrey A. Knight , Stephen W. MacQuarrie , Voya R. Markovich , Luis J. Matienzo , Amarjit S. Rai , David J. Russell , William T. Wike
发明人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , David E. Houser , Mark L. Janecek , Thomas E. Kindl , Jeffrey A. Knight , Stephen W. MacQuarrie , Voya R. Markovich , Luis J. Matienzo , Amarjit S. Rai , David J. Russell , William T. Wike
IPC分类号： H01L2131
CPC分类号： H01L21/486 , H01L23/49827 , H01L2224/16225 , H05K3/0032 , H05K3/0035 , H05K3/424 , H05K2201/0323 , H05K2203/1136
摘要： A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer includes a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, a rectangular channel, or a combination thereof.
摘要翻译：用于形成金属化盲孔的方法和结构。在金属层上形成电介质层，随后在电介质层中激光钻出凹陷，使得在凹陷的侧壁上形成包含碳的碳膜。如果激光钻孔不暴露金属层，则可以使用诸如反应离子蚀刻（RIE）的各向异性等离子体蚀刻来清洁和暴露金属层的表面。电介质层包括具有碳基聚合物材料的电介质材料，例如永久性光致抗蚀剂，聚酰亚胺和高级阻焊剂（ASM）。金属层包括金属材料，例如铜，铝和金。碳膜与金属层导电接触，并且碳膜具有足够的导电性，以允许直接在碳膜上电镀连续的金属层（例如铜），而不需要在电镀层下面的无电镀层。激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。凹陷可以具有任何横截面形状和深度的任何空间分布。作为示例，凹陷可以包括盲孔，矩形通道或其组合。

3. 发明授权

US07084509B2 Electronic package with filled blinds vias 有权
标题翻译：带盲孔通孔的电子包装
公开(公告)号：US07084509B2
公开(公告)日：2006-08-01
申请号：US10263909
申请日：2002-10-03
申请人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , Voya R. Markovich , Manh-Quan Tam Nguyen
发明人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , Voya R. Markovich , Manh-Quan Tam Nguyen
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H05K1/115 , H01L21/486 , H01L23/49827 , H01L2924/0002 , H05K3/4602 , H05K2201/09509 , H05K2201/09554 , H05K2201/096 , H05K2203/0733 , H01L2924/00
摘要： The density of electronic packaging and the electrical reliability of the sub-assemblies utilizing stacked blind vias are improved by providing a blind, landless via in a first dielectric layer laminated to a conductive metal core serving as a ground plane or a power plane. A hole is provided through the dielectric layer extending to the core. A metal, such as copper, is deposited electrolytically using the metal core as the cathode, or electrolessly without seeding into the hole. The metal is deposited on the core and progressively builds in the hole to the depth required for the via. A second dielectric layer is laminated to the first, and is provided with a second layer blind via aligned with the first via. This second via may be formed by conventional plating techniques. Multiple dielectric layers with stacked blind vias can be assembled in this manner.
摘要翻译：通过在层叠到用作接地平面或电源平面的导电金属芯的第一介电层中提供盲目的无地通孔来改善电子封装的密度和利用堆叠盲孔的子组件的电可靠性。通过延伸到芯的电介质层提供孔。使用金属芯作为阴极电解沉积诸如铜的金属，或者无电渗入孔中。金属沉积在芯上并逐渐建立在孔中以达到通孔所需的深度。第二电介质层被层压到第一电介质层，并且具有与第一通孔对准的第二层盲孔。该第二通孔可以由常规电镀技术形成。可以以这种方式组装具有堆叠的盲孔的多个电介质层。

4. 发明授权

US06924224B2 Method of forming filled blind vias 有权
标题翻译：形成填充盲孔的方法
公开(公告)号：US06924224B2
公开(公告)日：2005-08-02
申请号：US10729174
申请日：2003-12-05
申请人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , Voya R. Markovich , Manh-Quan Tam Nguyen
发明人： Frank D. Egitto , Elizabeth Foster , Raymond T. Galasco , Voya R. Markovich , Manh-Quan Tam Nguyen
IPC分类号： H01L21/48 , H01L23/498 , H05K1/11 , H05K3/46 , H01L21/4762 , H01L21/44
CPC分类号： H05K1/115 , H01L21/486 , H01L23/49827 , H01L2924/0002 , H05K3/4602 , H05K2201/09509 , H05K2201/09554 , H05K2201/096 , H05K2203/0733 , H01L2924/00
摘要： The density of electronic packaging and the electrical reliability of the sub-assemblies utilizing stacked blind vias are improved by providing a blind, landless via in a first dielectric layer laminated to a conductive metal core serving as a ground plane or a power plane. A hole is provided through the dielectric layer extending to the core. A metal, such as copper, is deposited electrolytically using the metal core as the cathode, or electrolessly without seeding into the hole. The metal is deposited on the core and progressively builds in the hole to the depth required for the via. A second dielectric layer is laminated to the first, and is provided with a second layer blind via aligned with the first via. This second via may be formed by conventional plating techniques. Multiple dielectric layers with stacked blind vias can be assembled in this manner.
摘要翻译：通过在层叠到用作接地平面或电源平面的导电金属芯的第一电介质层中提供盲目的无地通孔来改善电子封装的密度和利用堆叠盲孔的子组件的电可靠性。通过延伸到芯的电介质层提供孔。使用金属芯作为阴极电解沉积诸如铜的金属，或者化学镀而不接合到孔中。金属沉积在芯上并逐渐建立在孔中以达到通孔所需的深度。第二电介质层被层压到第一电介质层，并且具有与第一通孔对准的第二层盲孔。该第二通孔可以由常规电镀技术形成。可以以这种方式组装具有堆叠的盲孔的多个电介质层。

5. 发明授权

US06852152B2 Colloidal seed formulation for printed circuit board metallization 失效
标题翻译：用于印刷电路板金属化的胶体种子配方
公开(公告)号：US06852152B2
公开(公告)日：2005-02-08
申请号：US10253679
申请日：2002-09-24
申请人： Raymond T. Galasco , Roy H. Magnuson , Voya R. Markovich , Thomas R. Miller , Anita Sargent , William E. Wilson
发明人： Raymond T. Galasco , Roy H. Magnuson , Voya R. Markovich , Thomas R. Miller , Anita Sargent , William E. Wilson
IPC分类号： C23C18/28 , H05K3/18 , C23C18/30
CPC分类号： C23C18/28 , H05K3/181
摘要： A colloidal metal seed formulation useful for catalytically activating a surface of a non-conductive dielectric substrate in an electroless plating process is provided. The colloidal metal seed formulation includes stannous chloride, palladium chloride, HCl and a surfactant selected from a diphenyloxide disulfonic acid or alkali or alkaline earth metal salt thereof, C30H50O10, an alcohol alkoxylate and mixtures thereof. A method of electroless plating of a conductive metal onto a non-conductive dielectric substrate using the colloidal metal seed formulation is also provided.
摘要翻译：提供了一种用于在非电镀过程中催化活化非导电电介质基片的表面的胶态金属种子制剂。胶态金属种子制剂包括氯化亚锡，氯化钯，HCl和选自二苯氧基二磺酸或其碱金属或碱土金属盐，C30H50O10，醇烷氧基化物及其混合物的表面活性剂。还提供了使用胶体金属种子制剂将导电金属化学镀在非导电电介质基底上的方法。

6. 发明授权

US5472735A Method for forming electrical connection to the inner layers of a multilayer circuit board 失效
标题翻译：用于形成与多层电路板的内层的电连接的方法
公开(公告)号：US5472735A
公开(公告)日：1995-12-05
申请号：US351819
申请日：1994-12-08
申请人： Christina M. Boyko , Richard W. Carpenter , Raymond T. Galasco , Krystyna W. Semkow , Herbert Wegener
发明人： Christina M. Boyko , Richard W. Carpenter , Raymond T. Galasco , Krystyna W. Semkow , Herbert Wegener
IPC分类号： C25F3/02 , H05K3/07 , B05D5/12 , C25D5/34 , C25F3/14
CPC分类号： H05K3/07 , C25F3/02 , H05K2203/1152 , Y10S204/07
摘要： The present invention relates to a method for selectively electroetching a metal from an electrical device having the steps of: immersing the electrical device in an etching solution; immersing a cathode in the etching solution; applying an etching potential to a preselected area of the metal; and maintaining a passivation potential at the metal to remain unetched. The metal to remain unetched is not electrically connected to the preselected area and the passivation potential does not equal the etching potential.The present invention further relates to a method of forming an electrical connection to the inner layers of a multilayer circuit board having a copper foil surface layer and copper containing inner layers.
摘要翻译：本发明涉及一种从电气设备中选择性地电蚀金属的方法，其特征在于具有以下步骤：将电气设备浸入蚀刻液中; 将阴极浸入蚀刻溶液中; 将蚀刻电位施加到金属的预选区域; 并且保持在金属处的钝化电位以保持未蚀刻。保持未蚀刻的金属不与预选区域电连接，并且钝化电势不等于蚀刻电位。本发明还涉及一种形成与具有铜箔表面层和含铜内层的多层电路板的内层的电连接的方法。

7. 发明授权

US06228246B1 Removal of metal skin from a copper-Invar-copper laminate 失效
标题翻译：从铜Inv铜层压板去除金属表皮
公开(公告)号：US06228246B1
公开(公告)日：2001-05-08
申请号：US09347581
申请日：1999-07-01
申请人： Madhav Datta , Raymond T. Galasco , Lawrence P. Lehman , Roy H. Magnuson , Robin A. Susko , Robert D. Topa
发明人： Madhav Datta , Raymond T. Galasco , Lawrence P. Lehman , Roy H. Magnuson , Robin A. Susko , Robert D. Topa
IPC分类号： C25F300
CPC分类号： H05K3/44 , C25F3/00 , H05K3/07 , H05K2201/0338 , H05K2201/0347 , H05K2203/0285 , H05K2203/0361
摘要： A method of removing a metal skin from a through-hole surface of a copper-Invar-copper (CIC) laminate without causing differential etchback of the laminate. The metal skin includes debris deposited on the through-hole surface as the through hole is being formed by laser or mechanical drilling of a substrate that includes the laminate as an inner plane. Removing the metal skin combines electrochemical polishing (ECP) with ultrasonics. ECP dissolves the metal skin in an acid solution, while ultrasonics agitates and circulates the acid solution to sweep the metal skin out of the through hole. ECP is activated when a pulse power supply is turned on and generates a periodic voltage pulse from a pulse power supply whose positive terminal is coupled to the laminate and whose negative terminal is coupled to a conductive cathode. After the metal skin is removed, the laminate is differentially etched such that the copper is etched at a faster rate than the Invar. To prevent the differential etching, a copper layer is formed on a surface of the substrate with an electrical resistance R1 between the copper layer and the positive terminal of the pulse power supply. Additionally, an electrical resistance R2 is formed between the laminate and the positive terminal of the pulse power supply. Adjustment of R1 and R2 controls the relative etch rates of the copper and the Invar.
摘要翻译：从铜 - 堇青铜（CIC）层压板的通孔表面去除金属表皮而不会引起层压板的不均匀回蚀的方法。金属皮肤包括沉积在通孔表面上的碎屑，因为通孔是通过激光或机械钻孔形成的，所述基底包括层压体作为内平面。去除金属皮肤结合电化学抛光（ECP）与超声波。 ECP将金属皮肤溶解在酸性溶液中，同时超声波搅拌并循环酸溶液以将金属皮肤从通孔中扫出。当脉冲电源接通时，ECP被激活，并从脉冲电源产生周期性的电压脉冲，该脉冲电源的正极端子耦合到层压板并且其负极端子连接到导电阴极。在去除金属表皮之后，层压体被差异蚀刻，使得以比Invar更快的速度蚀刻铜。为了防止差分蚀刻，在衬底的表面上在铜层和脉冲电源的正端之间具有电阻R1形成铜层。此外，在层压体和脉冲电源的正极端之间形成电阻R2。 R1和R2的调整控制铜和殷钢的相对蚀刻速率。

8. 发明授权

US06935018B2 Copper plated invar with acid preclean 失效
标题翻译：镀铜搪瓷与酸预清洗
公开(公告)号：US06935018B2
公开(公告)日：2005-08-30
申请号：US10281450
申请日：2002-10-25
申请人： Raymond T. Galasco , Bonnie S. McClure , Craig W. Richards
发明人： Raymond T. Galasco , Bonnie S. McClure , Craig W. Richards
IPC分类号： H05K1/05 , H05K3/44 , H01R43/00
CPC分类号： H05K1/05 , H05K1/056 , H05K3/445 , H05K2201/0347 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913
摘要： A method for forming a copper-Invar-copper (CIC) laminate having an intermetallic layer of negligible thickness, and a structure associated with the CIC laminate. Starting with a block of Invar, the method includes a cleaning step followed by an electroplating step. The cleaning step electrochemically cleans the block of Invar with an acid solution while applying a negative voltage bias to the block of Invar. The electroplating step electroplates copper on the block of Invar, resulting in the block of Invar being sandwiched between two layers of copper, such that an intermetallic layer of zero or negligible thickness is disposed between the block of Invar and each layer of copper. Each layer of copper has a uniform thickness. If the starting block of Invar contains a through hole, then the electroplating step will plate a ring of copper on the through hole wall. The ring of copper makes a seamless connection with the two layers of copper, because the ring of copper and the two layers of copper each have the same grain structure.
摘要翻译：一种用于形成具有可忽略的厚度的金属间化合物的铜 - 阴模铜（CIC）层压体的方法和与CIC层压体相关联的结构。从一块Invar开始，该方法包括一个清洁步骤，然后是电镀步骤。清洁步骤用酸溶液电化学地清洗Invar块，同时对Invar的块施加负电压偏压。电镀步骤将铜镀在Invar块上，导致Invar块被夹在两层铜之间，使得在Invar块和每层铜之间设置零或可忽略的厚度的金属间层。铜层每层厚度均匀。如果Invar的起始块包含一个通孔，则电镀步骤将在通孔壁上镀一个铜环。由于铜环和两层铜都具有相同的晶粒结构，铜环与两层铜无缝连接。

9. 发明授权

US5374338A Selective electroetch of copper and other metals 失效
标题翻译：铜和其他金属的选择性电镀
公开(公告)号：US5374338A
公开(公告)日：1994-12-20
申请号：US143819
申请日：1993-10-27
申请人： Christina M. Boyko , Richard W. Carpenter , Raymond T. Galasco , Krystyna W. Semkow , Herbert Wegener
发明人： Christina M. Boyko , Richard W. Carpenter , Raymond T. Galasco , Krystyna W. Semkow , Herbert Wegener
IPC分类号： C25F3/02 , H05K3/07 , C25F3/04 , C25F3/06 , C25F3/14
CPC分类号： H05K3/07 , C25F3/02 , H05K2203/1152 , Y10S204/07
摘要： The present invention relates to a method for selectively electroetching a metal from an electrical device having the steps of: immersing the electrical device in an etching solution; immersing a cathode in the etching solution; applying an etching potential to a preselected area of the metal; and maintaining a passivation potential at the metal to remain unetched. The metal to remain unetched is not electrically connected to the preselected area and the passivation potential does not equal the etching potential.The present invention further relates to a method of forming an electrical connection to the inner layers of a multilayer circuit board having a copper foil surface layer and copper containing inner layers.
摘要翻译：本发明涉及一种从电气设备中选择性地电蚀金属的方法，其特征在于具有以下步骤：将电气设备浸入蚀刻液中; 将阴极浸入蚀刻溶液中; 将蚀刻电位施加到金属的预选区域; 并且保持在金属处的钝化电位以保持未蚀刻。保持未蚀刻的金属不与预选区域电连接，并且钝化电势不等于蚀刻电位。本发明还涉及一种形成与具有铜箔表面层和含铜内层的多层电路板的内层的电连接的方法。

10. 发明授权

US4540473A Copper plating bath having increased plating rate, and method 失效
标题翻译：具有提高电镀速率的镀铜浴和方法
公开(公告)号：US4540473A
公开(公告)日：1985-09-10
申请号：US554484
申请日：1983-11-22
申请人： Perminder S. Bindra , Allan P. David , Raymond T. Galasco , Charles E. Gasdik , David N. Light , Paul B. Pickar
发明人： Perminder S. Bindra , Allan P. David , Raymond T. Galasco , Charles E. Gasdik , David N. Light , Paul B. Pickar
IPC分类号： C25D3/38
CPC分类号： C25D3/38
摘要： A copper plating bath containing a sulfur-containing anion other than sulfate anion and/or a selenium-containing anion other than a selenate anion and/or a tellurium-containing anion other than a tellurate anion in an amount sufficient to increase the plating rate, and method for electroplating copper onto a substrate with the plating bath.
摘要翻译：含有除硫酸根阴离子以外的含硫阴离子和/或硒酸根阴离子以外的含硒阴离子和/或除了碲化阴离子以外的含碲阴离子的含量足以提高电镀率的镀铜浴，以及使用电镀液将铜电镀到基板上的方法。

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