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1. 发明授权

US09267200B2 Method for supplying sequential power impulses 有权
标题翻译：提供顺序电源脉冲的方法
公开(公告)号：US09267200B2
公开(公告)日：2016-02-23
申请号：US14112757
申请日：2012-04-04
申请人： Siegfried Krassnitzer , Daniel Lendi , Markus Lechthaler , Kurt Ruhm
发明人： Siegfried Krassnitzer , Daniel Lendi , Markus Lechthaler , Kurt Ruhm
IPC分类号： C23C14/34 , H01J37/34 , C23C14/35
CPC分类号： C23C14/3485 , C23C14/3407 , C23C14/3492 , C23C14/352 , H01J37/3467
摘要： The invention relates to a method for supplying power impulses for PVD sputtering cathodes subdivided into partial cathodes. In said method, the power impulse intervals acting on the partial cathodes are selected in such a way as to overlap, thereby dispensing with the need to interrupt the drawing of power supplied by the generator.
摘要翻译：本发明涉及一种为分散为部分阴极的PVD溅射阴极提供电源脉冲的方法。在所述方法中，作用在部分阴极上的功率脉冲间隔以重叠的方式进行选择，从而不需要中断由发电机提供的功率的绘制。

2. 发明申请

US20140190819A1 METHOD FOR SUPPLYING SEQUENTIAL POWER IMPULSES 有权
标题翻译：供应顺序功率的方法
公开(公告)号：US20140190819A1
公开(公告)日：2014-07-10
申请号：US14112757
申请日：2012-04-04
申请人： Siegfried Krassnitzer , Daniel Lendi , Markus Lechthaler , Kurt Ruhm
发明人： Siegfried Krassnitzer , Daniel Lendi , Markus Lechthaler , Kurt Ruhm
IPC分类号： C23C14/34
CPC分类号： C23C14/3485 , C23C14/3407 , C23C14/3492 , C23C14/352 , H01J37/3467
摘要： The invention relates to a method for supplying power impulses for PVD sputtering cathodes subdivided into partial cathodes. In said method, the power impulse intervals acting on the partial cathodes are selected in such a way as to overlap, thereby dispensing with the need to interrupt the drawing of power supplied by the generator.
摘要翻译：本发明涉及一种为分散为部分阴极的PVD溅射阴极提供电源脉冲的方法。在所述方法中，作用在部分阴极上的功率脉冲间隔以重叠的方式进行选择，从而不需要中断由发电机提供的功率的绘制。

3. 发明授权

US09376745B2 High-power sputtering source 有权
标题翻译：大功率溅射源
公开(公告)号：US09376745B2
公开(公告)日：2016-06-28
申请号：US14112618
申请日：2012-03-30
申请人： Siegfried Krassnitzer , Kurt Ruhm
发明人： Siegfried Krassnitzer , Kurt Ruhm
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： C23C14/35 , C23C14/352 , H01J37/3405 , H01J37/3444 , H01J37/3464 , H01J37/3467 , H01J37/3497
摘要： The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.
摘要翻译：本发明涉及一种磁控溅射工艺，其允许材料以目标表面溅射，使得高比例的溅射材料以离子的形式提供。根据本发明，使用简单的发生器实现所述目的，其功率被馈送到在多个时间间隔内分布的多个磁控溅射源，即在一个时间间隔期间将最大功率提供给一个溅射源，并且最大值在随后的时间间隔内向下一个溅射源供电，从而获得大于0.2A / cm 2的放电电流密度。溅射靶可以在关闭时间内冷却，从而防止超出温度限制。

4. 发明申请

US20140061030A1 HIGH-POWER SPUTTERING SOURCE 有权
标题翻译：大功率溅射源
公开(公告)号：US20140061030A1
公开(公告)日：2014-03-06
申请号：US14112618
申请日：2012-03-30
申请人： Siegfried Krassnitzer , Kurt Ruhm
发明人： Siegfried Krassnitzer , Kurt Ruhm
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/352 , H01J37/3405 , H01J37/3444 , H01J37/3464 , H01J37/3467 , H01J37/3497
摘要： The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.
摘要翻译：本发明涉及一种磁控溅射工艺，其允许材料以目标表面溅射，使得高比例的溅射材料以离子的形式提供。根据本发明，使用简单的发生器实现所述目的，其功率被馈送到在多个时间间隔内分布的多个磁控溅射源，即在一个时间间隔期间将最大功率提供给一个溅射源，并且最大值在随后的时间间隔内向下一个溅射源供电，从而获得大于0.2A / cm 2的放电电流密度。溅射靶可以在关闭时间内冷却，从而防止超出温度限制。

5. 发明授权

US09226379B2 Plasma source 有权
标题翻译：等离子体源
公开(公告)号：US09226379B2
公开(公告)日：2015-12-29
申请号：US14343549
申请日：2012-08-29
申请人： Siegfried Krassnitzer , Daniel Lendi , Juerg Hagmann
发明人： Siegfried Krassnitzer , Daniel Lendi , Juerg Hagmann
IPC分类号： H01J61/00 , H05H1/24 , H01J27/02 , H01J37/32
CPC分类号： H05H1/24 , H01J27/022 , H01J37/32045 , H01J37/32064
摘要： The present invention relates to a plasma source which is arranged in floating fashion on a vacuum chamber, wherein the plasma source comprises a source housing, and a filament is provided in the source housing and is arranged so as to be insulated therefrom, wherein means for measuring the potential drop between the source housing and the filament are provided. The measured potential drop can be used for regulating the voltage heating the filament. According to the invention, corresponding means are provided.
摘要翻译：本发明涉及一种以浮动方式设置在真空室上的等离子体源，其中等离子体源包括源壳体，并且灯丝设置在源壳体中并且被布置成与其绝缘，其中用于提供测量源壳体和灯丝之间的电位降。测量的电位降可用于调节灯丝的电压加热。根据本发明，提供了相应的装置。

6. 发明申请

US20140217892A1 PLASMA SOURCE 有权
标题翻译：等离子体源
公开(公告)号：US20140217892A1
公开(公告)日：2014-08-07
申请号：US14343549
申请日：2012-08-29
申请人： Siegfried Krassnitzer , Daniel Lendi , Juerg Hagmann
发明人： Siegfried Krassnitzer , Daniel Lendi , Juerg Hagmann
IPC分类号： H05H1/24
CPC分类号： H05H1/24 , H01J27/022 , H01J37/32045 , H01J37/32064
摘要： The present invention relates to a plasma source which is arranged in floating fashion on a vacuum chamber, wherein the plasma source comprises a source housing, and a filament is provided in the source housing and is arranged so as to be insulated therefrom, wherein means for measuring the potential drop between the source housing and the filament are provided. The measured potential drop can be used for regulating the voltage heating the filament. According to the invention, corresponding means are provided.
摘要翻译：本发明涉及一种以浮动方式设置在真空室上的等离子体源，其中等离子体源包括源壳体，并且灯丝设置在源壳体中并且被布置成与其绝缘，其中用于提供测量源壳体和灯丝之间的电位降。测量的电位降可用于调节灯丝的电压加热。根据本发明，提供了相应的装置。

7. 发明授权

US09657389B2 Target for spark vaporization with physical limiting of the propagation of the spark 有权
公开(公告)号：US09657389B2
公开(公告)日：2017-05-23
申请号：US13641499
申请日：2011-01-10
申请人： Siegfried Krassnitzer , Juerg Hagmann
发明人： Siegfried Krassnitzer , Juerg Hagmann
IPC分类号： C23C14/00 , C23C14/32 , H01J37/305 , H01J37/32
CPC分类号： C23C14/325 , H01J37/305 , H01J37/32614
摘要： The present invention relates to a target for an ARC source having a first body (3) of a material to be vaporized, which essentially comprises in one plane a surface which is intended to be vaporized, wherein the surface surrounds in this plane a central area, characterized in that in the central area a second body (7) is provided, which is preferably in the form of a disk and is electrically isolated from the first body (3), in such a way that the second body (7) can essentially provide no electrons for maintaining a spark.

8. 发明申请

US20130126347A1 ARC DEPOSITION SOURCE HAVING A DEFINED ELECTRIC FIELD 审中-公开
标题翻译：具有定义电场的ARC沉积源
公开(公告)号：US20130126347A1
公开(公告)日：2013-05-23
申请号：US13805730
申请日：2011-06-03
申请人： Siegfried Krassnitzer , Juerg Hagmann
发明人： Siegfried Krassnitzer , Juerg Hagmann
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/0089 , C23C14/021 , C23C14/325 , C23C14/5873 , H01J37/32055
摘要： The invention relates to an arc deposition device, comprising a cathode, an anode, as well as a voltage source for putting the anode at positive potential relative to the cathode. The device also comprises magnetic elements, which cause a magnetic field over the cathode surface, wherein the anode is arranged in the vicinity of the cathode in such a way that the magnetic field lines exiting from the cathode surface hit the anode.
摘要翻译：本发明涉及一种电弧沉积装置，其包括阴极，阳极以及用于将阳极相对于阴极置于正电位的电压源。该装置还包括在阴极表面上产生磁场的磁性元件，其中阳极被布置在阴极附近，使得从阴极表面离开的磁场线撞击阳极。

9. 发明申请

US20090107396A1 Vacuum chamber on a frame basis for coating installations 有权
标题翻译：真空室用于涂装设备
公开(公告)号：US20090107396A1
公开(公告)日：2009-04-30
申请号：US12259910
申请日：2008-10-28
申请人： Fredy Zund , Marco Mayer , Siegfried Krassnitzer , Jurgen Gwehenberger
发明人： Fredy Zund , Marco Mayer , Siegfried Krassnitzer , Jurgen Gwehenberger
IPC分类号： C23C14/00
CPC分类号： C23C16/44 , C23C14/22
摘要： The present invention relates to a vacuum chamber and to its production. According to the invention, the vacuum chamber comprises a frame into which insert plates are placed. The insert plates form together with the frame a closed space in which a vacuum can be created. Preferably, the shell of the frame is extracted from an integrally formed metal piece, with a large portion of material being removed, leading to openings for the insert plates to be created. This has among others the advantage that no welding seams are necessary where the individual plates are inserted.
摘要翻译：本发明涉及真空室及其生产。根据本发明，真空室包括其中放置有插入板的框架。插入板与框架一起形成封闭空间，其中可以产生真空。优选地，框架的外壳从整体形成的金属件中取出，大部分材料被移除，导致用于插入板的产生的开口。这其中还有一个优点是在插入单个板时不需要焊缝。

10. 发明授权

US06860977B2 Method for manufacturing a workpiece using a magnetron sputter source 有权
标题翻译：使用磁控溅射源制造工件的方法
公开(公告)号：US06860977B2
公开(公告)日：2005-03-01
申请号：US10703217
申请日：2003-11-06
申请人： Bernd Heinz , Martin Dubs , Thomas Eisenhammer , Pius Grunenfelder , Walter Haag , Stanislav Kadlec , Siegfried Krassnitzer
发明人： Bernd Heinz , Martin Dubs , Thomas Eisenhammer , Pius Grunenfelder , Walter Haag , Stanislav Kadlec , Siegfried Krassnitzer
IPC分类号： C23C14/35 , G11B7/26 , H01J37/34
CPC分类号： H01J37/3408
摘要： A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life, and a concave sputter face in a configuration with small target-to-workpiece distance is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is stationary and an eccentrically disposed inner pole with a second outer pole part is rotatable about the central source axis.
摘要翻译：使用具有优化的溅射材料产量以及靶的使用寿命的磁控管源来制造工件。获得在整个目标使用寿命上稳定的工件上的良好的分布值，并且具有小的目标到工件距离的构造中的凹形溅射面与磁体系统组合以形成磁控管电子阱其中磁控管电子阱的外极是静止的，并且具有第二外极部分的偏心设置的内极可以围绕中心源轴线旋转。

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