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1. 再颁专利

USRE36814E Superconductor 失效
标题翻译：超导体
公开(公告)号：USRE36814E
公开(公告)日：2000-08-08
申请号：US35783
申请日：1998-03-06
申请人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
发明人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
IPC分类号： H01L39/24 , B32B9/00 , H01L39/00
CPC分类号： H01L39/2435 , H01L39/2458 , H01L39/2461 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/265 , Y10T428/31678
摘要： Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.
摘要翻译：在低于700℃的温度下，在金属涂覆的基板上容易制造出高Tc超导体的优良膜。这些金属缓冲膜由Pt，Au，Ag，Pd，Ni或Ti制成。金属缓冲层显着提高了膜的超导性。由于容易在基板上形成该金属涂层，因此本发明可以增加可用的基材例如纤维，无定形固体或半导体的潜在数量。

2. 发明授权

US5661112A Superconductor 失效
标题翻译：超导体
公开(公告)号：US5661112A
公开(公告)日：1997-08-26
申请号：US223016
申请日：1988-07-22
申请人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
发明人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
IPC分类号： H01L39/24 , B32B9/00
CPC分类号： H01L39/2435 , H01L39/2458 , H01L39/2461 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/265 , Y10T428/31678
摘要： Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.
摘要翻译：在低于700℃的温度下，在金属涂覆的基板上容易制造出高Tc超导体的优良膜。这些金属缓冲膜由Pt，Au，Ag，Pd，Ni或Ti制成。金属缓冲层显着提高了膜的超导性。由于容易在基板上形成该金属涂层，因此本发明可以增加可用的基材例如纤维，无定形固体或半导体的潜在数量。

3. 发明授权

US05998337A Superconductor 失效
公开(公告)号：US05998337A
公开(公告)日：1999-12-07
申请号：US188232
申请日：1998-11-09
申请人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
发明人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
IPC分类号： H01L39/24 , H01L39/00
CPC分类号： H01L39/2435 , H01L39/2458 , H01L39/2461 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/265 , Y10T428/31678
摘要： Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.

4. 发明授权

US5047390A Josephson devices and process for manufacturing the same 失效
标题翻译：约瑟夫森设备和制造过程相同
公开(公告)号：US5047390A
公开(公告)日：1991-09-10
申请号：US413174
申请日：1989-09-27
申请人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
发明人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
IPC分类号： H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702 , Y10S505/873 , Y10S505/874
摘要： A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.

5. 发明授权

US4731172A Method for sputtering multi-component thin-film 失效
标题翻译：溅射多组分薄膜的方法
公开(公告)号：US4731172A
公开(公告)日：1988-03-15
申请号：US856783
申请日：1986-04-17
申请人： Hideaki Adachi , Hidetaka Higashino , Tsuneo Mitsuyu , Osamu Yamazaki
发明人： Hideaki Adachi , Hidetaka Higashino , Tsuneo Mitsuyu , Osamu Yamazaki
IPC分类号： C23C14/02 , C23C14/08 , C23C14/22 , C23C14/35 , H01L21/314 , H01L21/316 , C23C14/34
CPC分类号： C23C14/225 , C23C14/024 , C23C14/088 , C23C14/352 , H01L21/02197 , H01L21/02266 , H01L21/31691
摘要： A underlying layer of multi-component material of a first formula is deposited on a substrate by controlling the amounts of sputtering materials evaporated respectively from a plurality of sputtering sources. A transition layer of multi-component material is subsequently formed on the underlying layer by controlling the amounts of the sputtering materials so that the transition layer is given a second, variable formula varying in a range from the first formula at the boundary between the underlying layer and the transition layer to a third formula. An overlying layer of multi-component material of the third formula is subsequently formed on the transition layer by controlling the amounts of the sputtering materials. Specifically, the first formula is [Pb.sub.1-(x/100) La.sub.x/100 ][Zr.sub.y/100 Ti.sub.z/100 ].sub.w O.sub.3, in which 10.ltoreq.x.ltoreq.40, y.ltoreq.5, w=1-(x/400) and y+z=100, and the third formula is [Pb.sub.1-(X/100) La.sub.X/100 ] [Zr.sub.Y/100 Ti.sub.Z/100 ].sub.W O.sub.3, in which X.ltoreq.20, 40.ltoreq.Y.ltoreq.90, W=1-(X/400) and Y+Z=100.
摘要翻译：通过控制分别从多个溅射源蒸发的溅射材料的量，将第一配方的多组分材料的下层沉积在基板上。随后通过控制溅射材料的量，在底层上形成多组分材料的过渡层，使得过渡层被赋予第二个可变公式，其变化范围从第一公式在下层和过渡层到第三个公式。随后通过控制溅射材料的量在过渡层上形成第三配方的多组分材料的上覆层。具体地说，第一公式为[Pb1-（x / 100）Lax / 100] [Zry / 100Tiz / 100] wO3，其中10≤x≤40，y = 5，w = 1-（ x / 400）和y + z = 100，第三式为[Pb1-（X / 100）LaX / 100] [ZrY / 100TiZ / 100] WO3，其中X = 20,40 <

6. 发明授权

US5856204A Tunnel-type Josephson element and method for manufacturing the same 失效
标题翻译：隧道式约瑟夫逊元件及其制造方法
公开(公告)号：US5856204A
公开(公告)日：1999-01-05
申请号：US721976
申请日：1996-09-27
申请人： Masahiro Sakai , Hidetaka Higashino , Hideaki Adachi , Kentaro Setsune
发明人： Masahiro Sakai , Hidetaka Higashino , Hideaki Adachi , Kentaro Setsune
IPC分类号： H01L39/22 , H01L21/00
CPC分类号： H01L39/225
摘要： A plurality of single crystal grains made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 which are heat treated at a temperature that is equal to or higher than the crystallization temperature of an oxide high-temperature superconductor made of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and are surrounded by a grain boundary are formed on a substrate made of a MgO single crystal. A convex portion having a sectional area of 400 .mu.m.sup.2 or less and a height which is equal to or less than ten times as much as a space between block layers of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 is formed on the upper face portion of the single crystal grain. A first electrode made of Au is formed on the upper face of the convex portion of the single crystal grain, and a second electrode is formed in a region other than the convex portion in the single crystal grain. The first electrode is insulated from the second electrode by an insulating film made of CaF.sub.2.
摘要翻译：由Bi2Sr2Ca1Cu2O8制成的多个由Bi2Sr2Ca1Cu2O8构成的氧化物高温超导体的晶化温度以上的温度进行热处理并被晶界包围的单晶粒子形成在由 MgO单晶。在单晶粒的上表面上形成有截面积为400μm或更小的凸部，其高度等于或小于Bi2Sr2Ca1Cu2O8的阻挡层之间的间隔的十倍。在单晶粒的凸部的上表面上形成由Au构成的第一电极，在单晶粒的凸部以外的区域形成第二电极。第一电极通过由CaF 2制成的绝缘膜与第二电极绝缘。

7. 发明授权

US4980339A Superconductor structure 失效
标题翻译：超导体结构
公开(公告)号：US4980339A
公开(公告)日：1990-12-25
申请号：US223658
申请日：1988-07-25
申请人： Kentaro Setsune , Takeshi Kamada , Hideaki Adachi , Kiyotaka Wasa , Takashi Hirao , Osamu Yamazaki , Hidetaka Higashino
发明人： Kentaro Setsune , Takeshi Kamada , Hideaki Adachi , Kiyotaka Wasa , Takashi Hirao , Osamu Yamazaki , Hidetaka Higashino
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.

8. 发明授权

US08393719B2 Piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element 有权
标题翻译：压电膜，喷墨头，通过喷墨头形成图像的方法，角速度传感器，角速度传感器测量角速度的方法，压电发生元件以及使用压电发生元件产生电力的方法
公开(公告)号：US08393719B2
公开(公告)日：2013-03-12
申请号：US13280022
申请日：2011-10-24
申请人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
发明人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
IPC分类号： B41J2/045 , H01L41/00 , H02N2/00
CPC分类号： H01L41/187 , B41J2/14032 , G01C19/5621 , G01C19/5628 , H01L41/0478 , H01L41/0815 , H01L41/0973 , H01L41/1136 , H01L41/316
摘要： The purpose of the present invention is to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film.The present invention is directed to a piezoelectric film comprising a NaxLa1-xNiO3-x layer with a (001) orientation and a (Na,Bi)TiO3—BaTiO3 layer with a (001) orientation, wherein x is not less than 0.01 and not more than 0.1, and the NaxLa1-xNiO3-x layer (0.01≦x≦0.1) and the (Na,Bi)TiO3—BaTiO3 layer are laminated.
摘要翻译：本发明的目的是提供一种包含无铅铁电材料的无铅压电膜，其具有与PZT相当的低介电损耗和高压电性能，以及制造无铅压电膜的方法。本发明涉及一种包括具有（001）取向的NaxLa1-xNiO3-x层和（001）取向的（Na，Bi）TiO3-BaTiO3层的压电膜，其中x不小于0.01而不是大于0.1，NaxLa1-xNiO3-x层（0.01＆nlE; x＆nlE; 0.1）和（Na，Bi）TiO3-BaTiO3层层叠。

9. 发明授权

US08390179B2 Piezoelectric film and method of manufacturing the same, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element 有权
标题翻译：压电膜及其制造方法，喷墨头，通过喷墨头形成图像的方法，角速度传感器，角速度传感器测量角速度的方法，压电发生元件以及使用该方法产生电力的方法压电发电元件
公开(公告)号：US08390179B2
公开(公告)日：2013-03-05
申请号：US13551018
申请日：2012-07-17
申请人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
发明人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
IPC分类号： H01L41/08
CPC分类号： C01G23/006 , B41J2/14274 , C01G29/006 , C01P2002/50 , C01P2002/52 , C01P2002/72 , C01P2006/32 , C01P2006/40 , C23C14/0021 , C23C14/025 , C23C14/088 , G01C19/5621 , G01C19/5628 , H01L41/0973 , H01L41/1136 , H01L41/1871
摘要： It is an object of the present invention to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film.The present invention is directed to a piezoelectric film comprising a (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer with a (111) orientation, where 0.30≦x≦0.46 and 0.51≦y≦0.62.
摘要翻译：本发明的目的是提供一种无铅压电薄膜，其包括无铅铁电材料，并且具有与PZT相当的低介电损耗和高压电性能，以及制造无铅压电薄膜的方法。本发明涉及一种包括具有（111）取向的（NaxBiy）TiO0.5x + 1.5y + 2-BaTiO3层的压电膜，其中0.30和n1E; x和nlE; 0.46和0.51≤n1E; y＆nlE; 0.62。

10. 发明申请

US20120043857A1 ACTUATOR AND METHOD FOR DRIVING ACTUATOR 有权
标题翻译：执行器和驱动执行器的方法
公开(公告)号：US20120043857A1
公开(公告)日：2012-02-23
申请号：US13282089
申请日：2011-10-26
申请人： Michihito UEDA , Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
发明人： Michihito UEDA , Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
IPC分类号： H01L41/18
CPC分类号： H01L41/094 , H01L41/042 , H01L41/187 , H01L41/316
摘要： The purpose of the present invention is to provide a method for driving an actuator in which unnecessary deformation is suppressed.The present invention provides a method for driving an actuator, comprising the following steps (a) and (b): a step (a) of preparing the actuator, wherein the actuator comprises a first electrode, a piezoelectric layer composed of (Bi,Na,Ba)TiO3, and a second electrode, the piezoelectric layer is interposed between the first electrode and the second electrode, +X direction, +Y direction, and +Z direction denote [100] direction, [01-1] direction, and [011] direction, respectively, and the piezoelectric layer is preferentially oriented along the +Z direction; and a step (b) of applying a potential difference between the first electrode and the second electrode to drive the actuator.
摘要翻译：本发明的目的是提供一种驱动致动器的方法，其中不必要的变形被抑制。本发明提供一种用于驱动致动器的方法，包括以下步骤（a）和（b）：制备致动器的步骤（a），其中致动器包括第一电极，由（Bi，Na ，Ba）TiO 3和第二电极，压电层插入在第一电极和第二电极之间，+ X方向，+ Y方向和+ Z方向表示[100]方向，[01-1]方向，以及方向，并且压电层优先沿着+ Z方向取向; 以及在第一电极和第二电极之间施加电位差以驱动致动器的步骤（b）。

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