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1. 发明授权

US5817410A Nonlinear optical composites using linear transparent substances and method for producing the same 失效
标题翻译：使用线性透明物质的非线性光学复合材料及其制造方法
公开(公告)号：US5817410A
公开(公告)日：1998-10-06
申请号：US495186
申请日：1995-06-27
申请人： Ayumu Tsujimura , Masaru Yoshida , Ichiro Tanahashi , Yoshio Manabe , Tsuneo Mitsuyu
发明人： Ayumu Tsujimura , Masaru Yoshida , Ichiro Tanahashi , Yoshio Manabe , Tsuneo Mitsuyu
IPC分类号： G02F1/355 , B32B5/16
CPC分类号： G02F1/3551 , Y10T428/256 , Y10T428/26 , Y10T428/2991
摘要： The present invention relates to nonlinear optical composites for optical devices such as optical switches and to a method for producing the composites. The composites, comprising optically transparent substances exhibiting linear optical response and metal containing particles dispersed therein, utilize the nonlinear optical effect associated with the surface plasma resonance of a metal.
摘要翻译：本发明涉及用于诸如光开关的光学装置的非线性光学复合材料以及一种生产复合材料的方法。包含显示线性光学响应的光学透明物质和分散在其中的含金属颗粒的复合材料利用与金属的表面等离子体共振相关联的非线性光学效应。

2. 发明授权

US5113473A Nonlinear, optical thin-films and manufacturing method thereof 失效
标题翻译：非线性光学薄膜及其制造方法
公开(公告)号：US5113473A
公开(公告)日：1992-05-12
申请号：US752988
申请日：1991-09-03
申请人： Masaru Yoshida , Yoshio Manabe , Tsuneo Mitsuyu , Ichiro Tanahashi
发明人： Masaru Yoshida , Yoshio Manabe , Tsuneo Mitsuyu , Ichiro Tanahashi
IPC分类号： G02F1/35 , G02F1/355 , G02F3/02 , H01L21/208 , H01S3/108
CPC分类号： G02F1/355
摘要： Nonlinear, optical thin-films comprising a plurality of island structures of semiconductor ultra-fine particles and a plurality of continuous films of an optically transparent material, said island structures and said continuous films being applied alternately on a substrate. A method for manufacturing nonlinear, optical thin-films comprising the steps of: (a) providing a substrate; (b) depositing an island structure of semiconductor ultra-fine particles on the substrate or a continuous film; and (c) depositing the continuous film of optically transparent substance on the island structure; (d) the steps (b) and (c) of depositing an island structure and the continuous film being performed alternately.
摘要翻译：包含半导体超细颗粒的多个岛状结构和光学透明材料的多个连续膜的非线性光学薄膜，所述岛结构和所述连续膜交替地施加在基板上。一种制造非线性光学薄膜的方法，包括以下步骤：（a）提供衬底; （b）在衬底上沉积半导体超细颗粒的岛结构或连续膜; 和（c）将光学透明物质的连续膜沉积在岛状结构上; （d）沉积岛状结构的步骤（b）和（c），并且连续膜交替执行。

3. 发明授权

US4276535A Thermistor 失效
标题翻译：热敏电阻
公开(公告)号：US4276535A
公开(公告)日：1981-06-30
申请号：US125231
申请日：1980-02-27
申请人： Tsuneo Mitsuyu , Kiyotaka Wasa , Shigeru Hayakawa
发明人： Tsuneo Mitsuyu , Kiyotaka Wasa , Shigeru Hayakawa
IPC分类号： H01C7/04
CPC分类号： H01C7/041 , H01C7/048
摘要： A high performance, precision thermistor comprising a temperature sensitive resistor in the form of a thin, uniform layer of silicon carbide, deposited on a base support by sputtering, and electrode means attached to the temperature sensitive resistor in electrically connected relation to the temperature sensitive resistor.
摘要翻译：一种高性能精密热敏电阻，其包括通过溅射沉积在基底支撑件上的薄均匀碳化硅层形式的温度敏感电阻器，以及连接到温度敏感电阻器的温度敏感电阻器，该温度敏感电阻器与温度敏感电阻器电连接。

4. 发明授权

US4236095A Surface acoustic wave device comprising piezoelectric substrate having zinc oxide layer on .alpha.-alumina layer 失效
标题翻译：表面声波装置包括在α-氧化铝层上具有氧化锌层的压电基片
公开(公告)号：US4236095A
公开(公告)日：1980-11-25
申请号：US30906
申请日：1979-04-17
申请人： Shusuke Ono , Tsuneo Mitsuyu , Osamu Yamazaki , Kiyotaka Wasa
发明人： Shusuke Ono , Tsuneo Mitsuyu , Osamu Yamazaki , Kiyotaka Wasa
IPC分类号： H03H9/145 , G10K11/36 , H03H3/08 , H03H9/25 , H01L41/18
CPC分类号： G10K11/36 , H03H3/08
摘要： A surface acoustic wave device comprising a piezoelectric substrate which comprises an .alpha.-alumina layer as a base region and a zinc oxide layer as a surface region formed on the .alpha.-alumina layer. Preferably the two layers are each made of a single crystal, and the thickness of the zinc oxide layer and an angle between a crystallographic axis of the zinc oxide single crystal and the direction of wave propagation are determined so as to fall within optimum ranges, respectively. This device features an increased phase velocity and an augmented value for the electromechanical coupling coefficient and accordingly is of use at very-high to ultra-high frequencies.
摘要翻译：一种表面声波装置，包括压电基片，其包含作为基底区域的α-氧化铝层和形成在所述α-氧化铝层上的表面区域的氧化锌层。优选地，两层各自由单晶制成，并且氧化锌层的厚度和氧化锌单晶的结晶轴与波传播方向之间的角度分别被确定为在最佳范围内。该装置具有增加的相速度和机电耦合系数的增加值，并因此在非常高到超高频率下使用。

5. 发明授权

US07313080B2 Information recording medium and its production method, and optical information recording reproducing apparatus 失效
标题翻译：信息记录介质及其制造方法以及光信息记录重放装置
公开(公告)号：US07313080B2
公开(公告)日：2007-12-25
申请号：US10510400
申请日：2003-04-07
申请人： Teruhiro Shiono , Hiroaki Yamamoto , Seiji Nishino , Tsuneo Mitsuyu
发明人： Teruhiro Shiono , Hiroaki Yamamoto , Seiji Nishino , Tsuneo Mitsuyu
IPC分类号： G11B7/24
CPC分类号： G11B7/243 , B82Y10/00 , B82Y30/00 , G11B7/00455 , G11B7/24038 , G11B7/251 , G11B7/2533 , G11B7/2534 , G11B7/2538 , G11B7/2542 , G11B7/257 , G11B7/258 , G11B7/266 , G11B2007/24304 , G11B2007/24306 , G11B2007/2431 , G11B2007/24312 , G11B2007/2432 , G11B2007/24324
摘要： An information recording medium has a recording portion where three-dimensional information can be recorded. The recording portion includes at least one particle-containing layer (recording layer or a recording auxiliary layer) containing particles absorbing at least a part of light having a predetermined wavelength and substantially transparent to a recording light and a reproducing light having a wavelength longer than the predetermined wavelength and a particle holding material substantially transparent to the recording and reproducing lights. The mean particle size of the particles is preferably shorter than the wavelengths of the recording and reproducing lights.
摘要翻译：信息记录介质具有记录三维信息的记录部分。记录部分包括至少一个含有颗粒的层（记录层或记录辅助层），其含有吸收具有预定波长的至少一部分光并且对记录光基本透明的颗粒和具有比该预定波长和对记录和再现光基本上透明的颗粒保持材料。颗粒的平均粒度优选比记录和再现光的波长短。

6. 发明授权

US06577386B2 Method and apparatus for activating semiconductor impurities 失效
标题翻译：激活半导体杂质的方法和装置
公开(公告)号：US06577386B2
公开(公告)日：2003-06-10
申请号：US09852656
申请日：2001-05-11
申请人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
发明人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
IPC分类号： H01L21263
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要翻译：用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。

7. 发明授权

US5492080A Crystal-growth method and semiconductor device production method using the crystal-growth method 失效
标题翻译：晶体生长法和半导体器件生产方法采用晶体生长法
公开(公告)号：US5492080A
公开(公告)日：1996-02-20
申请号：US360642
申请日：1994-12-21
申请人： Kazuhiro Ohkawa , Tsuneo Mitsuyu
发明人： Kazuhiro Ohkawa , Tsuneo Mitsuyu
IPC分类号： C30B23/02 , C30B25/18
CPC分类号： C30B23/02 , C30B23/002 , C30B29/48
摘要： A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0 1 and 0 1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
摘要翻译：晶体生长方法包括分别填充三种材料的方法，一种选自Mg，MgS和MgSe化合物，另外两种是ZnSe和ZnS化合物，在它们各自的渗出电池中，通过控制渗出电池的温度和分子束强度，在加热的基底上的Zn1-YMgYSZSe1-Z（0＆lt; 1＆gt; 1和0Z）单晶薄膜的生长过程。

8. 发明授权

US5464991A Nonlinear optical materials and their manufacturing method 失效
标题翻译：非线性光学材料及其制造方法
公开(公告)号：US5464991A
公开(公告)日：1995-11-07
申请号：US332469
申请日：1994-10-31
申请人： Yoshio Manabe , Ichiro Tanahashi , Tsuneo Mitsuyu
发明人： Yoshio Manabe , Ichiro Tanahashi , Tsuneo Mitsuyu
IPC分类号： G02F1/35 , G02F1/355 , H01S3/108 , H01L29/04
CPC分类号： G02F1/3551
摘要： Non-linear optical materials are formed from amorphous thin films having semiconductor microcrystallites dispersed therein. Amorphous thin films of nitrides or carbides are selected that have a larger bandgap than the bandgap of the semiconductor materials which form the dispersed microcrystallites in order to prevent the surfaces of the microcrystallites from undergoing chemical reactions such as oxidation and the like. The non-linear optical materials are prepared by a sputtering method in which a target formed from the semiconductor material and a separate target formed from the nitrides or carbides are sputtered to produce the non-linear optical material.
摘要翻译：非线性光学材料由分散有半导体微晶的无定形薄膜形成。选择氮化物或碳化物的无定形薄膜，其具有比形成分散的微晶的半导体材料的带隙更大的带隙，以防止微晶的表面经历诸如氧化等的化学反应。非线性光学材料通过溅射法制备，其中由半导体材料形成的靶和由氮化物或碳化物形成的单独靶被溅射以产生非线性光学材料。

9. 发明授权

US5339326A Reflector for semiconductor laser end-face and method of manufacturing the same 失效
标题翻译：半导体激光端面反射板及其制造方法
公开(公告)号：US5339326A
公开(公告)日：1994-08-16
申请号：US112978
申请日：1993-08-30
申请人： Ayumu Tsujimura , Kazuhiro Ohkawa , Yoshii Shigeo , Tsuneo Mitsuyu
发明人： Ayumu Tsujimura , Kazuhiro Ohkawa , Yoshii Shigeo , Tsuneo Mitsuyu
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028
摘要： The invention provides a reflector for a semiconductor device which oscillates in the region from the near infrared region to the visible and short wavelength region, and a method of manufacturing the reflector. With an RF magnetron sputtering apparatus, a dielectric reflector of deposited films is formed on an end-face of a ZnSe semiconductor laser device. The deposited films are formed by 3 repetitions of alternately depositing an SiO.sub.2 film and a TiO.sub.2 film which each has an optical thickness of a quarter of the oscillating wavelength of the semiconductor laser device such that a reflectance at the oscillating wavelength of the laser device is over 90%. The dielectric reflector improves current--light output characteristics of the laser device compared to a conventional semiconductor laser device provided with no dielectric reflector.
摘要翻译：本发明提供一种用于在从近红外区到可见光短波长区域的区域中振荡的半导体器件的反射器，以及制造反射器的方法。使用RF磁控溅射装置，在ZnSe半导体激光装置的端面上形成沉积膜的电介质反射体。沉积膜通过3次重复交替沉积SiO 2膜和TiO 2膜形成，每个SiO 2膜和TiO 2膜的半导体激光器件的振荡波长的光学厚度为四分之一，使得激光器件的振荡波长的反射率超过 90％。与没有介质反射器的常规半导体激光器件相比，介质反射器改善了激光器件的电流 - 光输出特性。

10. 发明授权

US5396862A Method of manufacturing a compound semiconductor 失效
标题翻译：化合物半导体的制造方法
公开(公告)号：US5396862A
公开(公告)日：1995-03-14
申请号：US151894
申请日：1993-11-15
申请人： Kazuhiro Okawa , Shigeo Hayashi , Takeshi Karasawa , Tsuneo Mitsuyu
发明人： Kazuhiro Okawa , Shigeo Hayashi , Takeshi Karasawa , Tsuneo Mitsuyu
IPC分类号： H01L21/306 , H01L21/363 , H01L21/465 , H01L21/20
CPC分类号： H01L21/02046 , H01L21/02395 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/0262 , H01L21/02631 , H01L21/02661 , H01L21/465 , Y10S438/906 , Y10S438/913 , Y10S438/93
摘要： A compound semiconductor thin film is grown on a compound semiconductor surface, which is cleaned by irradiating the surface with gas containing at least hydrogen molecules and by efficiently removing contaminant on the surface at low temperature. A beam containing at least hydrogen molecules is irradiated from a plasma generating room attached to a MBE chamber, and cleans the surface of a compound semiconductor at low temperature. By an additional mechanism attached to the MBE chamber, a compound semiconductor thin film of high quality is grown on the cleaned surface of the compound semiconductor.
摘要翻译：化合物半导体薄膜生长在化合物半导体表面上，该化合物半导体表面通过用至少含有氢分子的气体照射表面并通过在低温下有效去除表面上的污染物进行清洁。至少含有氢分子的光束从附着于MBE室的等离子体发生室照射，并在低温下清洗化合物半导体的表面。通过附加到MBE室的附加机构，在化合物半导体的清洁表面上生长高质量的化合物半导体薄膜。

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