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1. 发明授权

US5047390A Josephson devices and process for manufacturing the same 失效
标题翻译：约瑟夫森设备和制造过程相同
公开(公告)号：US5047390A
公开(公告)日：1991-09-10
申请号：US413174
申请日：1989-09-27
申请人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
发明人： Hidetaka Higashino , Koichi Mizuno , Hideaki Adachi , Kentaro Setsune , Akira Enokihara , Shinichiro Hatta , Kiyotaka Wasa , Shigemi Kohiki , Tomoaki Matsushima
IPC分类号： H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702 , Y10S505/873 , Y10S505/874
摘要： A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.

2. 发明授权

US5757243A High frequency system including a superconductive device and temperature controlling apparatus 失效
标题翻译：高频系统包括超导装置和温度控制装置
公开(公告)号：US5757243A
公开(公告)日：1998-05-26
申请号：US649884
申请日：1996-05-13
申请人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H03B15/00 , H03D9/06 , H04B3/18
CPC分类号： H03B15/003 , H03D9/06 , H03B2200/0016 , H03B2200/0076 , H03D2200/0076 , H03D2200/0084
摘要： An effective high frequency oscillator is made of a plurality of Josephson devices. A high frequency converter as a high frequency circuit is made of the high frequency oscillator, nonlinear superconductor devices, and transmission line. Josephson devices are connected in parallel to make a superconductor module. Then superconductive modules are connected in series for high frequency via a phase locking circuit such as a thin film type capacitor to make the high frequency oscillator. Consequently, the high frequency oscillator is used as a local oscillator for a frequency converter. The high frequency system comprises a high frequency package housing a high frequency circuit, a cooling unit including a low temperature stage in thermal contact with the high frequency package, and a shielding case for housing the high frequency circuit and the low temperature stage. The high frequency system of the present invention provides a small-sized and power-saving high frequency circuit having operational stability.
摘要翻译：有效的高频振荡器由多个Josephson器件制成。作为高频电路的高频变频器由高频振荡器，非线性超导体器件和传输线构成。约瑟夫森装置并联连接以制造超导体模块。然后超导模块通过诸如薄膜型电容器之类的锁相电路串联连接成高频振荡器。因此，高频振荡器用作变频器的本地振荡器。高频系统包括容纳高频电路的高频封装，包括与高频封装热接触的低温级的冷却单元和用于容纳高频电路和低温级的屏蔽壳。本发明的高频系统提供了具有操作稳定性的小型和省电的高频电路。

3. 发明授权

US06360111B1 High-frequency circuit element having a superconductive resonator with an electroconductive film about the periphery 有权
标题翻译：具有超导谐振器的高频电路元件，其周围具有导电膜
公开(公告)号：US06360111B1
公开(公告)日：2002-03-19
申请号：US09415117
申请日：1999-10-08
申请人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01P708
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译：在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和所述输入输出端子（13）形成为相对的。通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。

4. 发明授权

US6016434A High-frequency circuit element in which a resonator and input/ouputs are relatively movable 失效
标题翻译：谐振器和输入/输出相对可移动的高频电路元件
公开(公告)号：US6016434A
公开(公告)日：2000-01-18
申请号：US765587
申请日：1996-12-17
申请人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01P1/203 , H01P7/08
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译： PCT No.PCT / JP95 / 01168 Sec。 371日期1996年12月17日第 102（e）日期1996年12月17日PCT提交1995年6月9日PCT公布。公开号WO95 / 35584 日期1995年12月28日在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和所述输入输出端子（13）形成为相对的。通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。

5. 发明授权

US06360112B1 High-frequency circuit element having a superconductive resonator tuned by another movable resonator 有权
标题翻译：具有由另一可动谐振器调谐的超导谐振器的高频电路元件
公开(公告)号：US06360112B1
公开(公告)日：2002-03-19
申请号：US09415153
申请日：1999-10-08
申请人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01P708
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译：在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和所述输入输出端子（13）形成为相对的。通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。

6. 发明授权

US5480859A Bi-Sr-Ca-Cu-O superconductor junction through a Bi-Sr-Cu-O barrier layer 失效
标题翻译： Bi-Sr-Ca-Cu-O超导体结通过Bi-Sr-Cu-O势垒层
公开(公告)号：US5480859A
公开(公告)日：1996-01-02
申请号：US183795
申请日：1994-01-21
申请人： Koichi Mizuno , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01L39/22 , H01L39/24 , H01L39/12
CPC分类号： H01L39/2493 , Y10S505/702
摘要： A superconductor device is provided including a base, a base electrode formed on the base which is made of a Bi-system oxide superconductive material containing an alkaline earth metal, a barrier layer formed on the base electrode which is made of Bi--Sr--Cu--O, a counter electrode formed on the barrier layer which is made of a Bi-system oxide superconductive material containing an alkaline earth metal, a contact electrode formed so as contact with the counter electrode, and a separation layer for separating said contact electrode from said base electrode.
摘要翻译：提供了一种超导体器件，包括基底，形成在基底上的基底电极，其由含有碱土金属的双系氧化物超导材料制成，在基极上形成的阻挡层由Bi-Sr-Cu -O，形成在由含有碱土金属的Bi系氧化物超导材料制成的阻挡层上的对电极，与对电极接触形成的接触电极和用于将接触电极分离的分离层所述基极。

7. 发明授权

US5481119A Superconducting weak-link bridge 失效
标题翻译：超导弱连桥
公开(公告)号：US5481119A
公开(公告)日：1996-01-02
申请号：US926020
申请日：1992-08-07
申请人： Hidetaka Higashino , Koichi Mizuno , Kentaro Setsune
发明人： Hidetaka Higashino , Koichi Mizuno , Kentaro Setsune
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496
摘要： A superconducting element includes a superconducting thin film bridge extending along the surface of a substrate, and a control electrode member for injecting quasi particles into a portion of an intersection region of the superconducting thin film bridge. The intersection region extends across the superconducting thin film bridge in a direction which is perpendicular to the current flow direction of the superconducting thin film bridge. A remaining portion of the intersection region, which is not injected with quasi particles by the control electrode member, operates as a weak-coupling bridge to thereby control the current flow within the superconducting thin film bridge.
摘要翻译：超导元件包括沿着衬底的表面延伸的超导薄膜电桥，以及用于将准微粒注入到超导薄膜桥的交叉区域的一部分中的控制电极构件。交叉区域在垂直于超导薄膜桥的电流流动方向的方向上延伸穿过超导薄膜桥。通过控制电极部件没有注入准粒子的交叉区域的剩余部分作为弱耦合桥作用，从而控制超导薄膜桥内的电流。

8. 发明授权

US5828079A Field-effect type superconducting device including bi-base oxide compound containing copper 失效
标题翻译：场效应型超导器件包括含铜的二基氧化物化合物
公开(公告)号：US5828079A
公开(公告)日：1998-10-27
申请号：US80726
申请日：1993-06-24
申请人： Koichi Mizuno , Hideaki Adachi , Yo Ichikawa , Kentaro Setsune
发明人： Koichi Mizuno , Hideaki Adachi , Yo Ichikawa , Kentaro Setsune
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/146
摘要： A field-effect type superconducting device includes a channel layer. The channel layer includes Bi-based oxide compound containing Cu. A source electrode contacts the channel layer. A drain electrode contacts the channel layer. A gate insulating film made of insulating material extends on on the channel layer. A gate electrode extends on the gate insulating film.
摘要翻译：场效应型超导装置包括沟道层。沟道层包括含有Cu的Bi基氧化物。源电极接触沟道层。漏极接触沟道层。由绝缘材料制成的栅极绝缘膜在沟道层上延伸。栅电极在栅极绝缘膜上延伸。

9. 发明授权

US5462921A Method of forming Hg-containing oxide superconducting films 失效
标题翻译：形成含Hg氧化物超导膜的方法
公开(公告)号：US5462921A
公开(公告)日：1995-10-31
申请号：US239963
申请日：1994-05-09
申请人： Hideaki Adachi , Kentaro Setsune , Koichi Mizuno
发明人： Hideaki Adachi , Kentaro Setsune , Koichi Mizuno
IPC分类号： H01L39/12 , B05D5/12
CPC分类号： H01L39/126 , Y10S505/742
摘要： A method of fabricating a thin-film Hg-containing oxide superconductor is disclosed, which comprises forming a thin film on a substrate, said thin film containing mercury, an alkaline earth element, and copper as main components thereof; and subjecting said substrate with the thin film to a heat treatment in an oxygen-containing atmosphere at an oxygen partial pressure of 1/500 to 1/10 atm, to convert said thin film to the thin-film superconductor.
摘要翻译：公开了一种制造薄膜Hg的氧化物超导体的方法，其包括在衬底上形成薄膜，所述薄膜含有汞，碱土金属元素和铜作为其主要成分; 并在氧分压为1/500至1/10大气压的含氧气氛中对所述薄膜进行热处理，以将所述薄膜转换成薄膜超导体。

10. 发明授权

US5434126A Thin-film high Tc superconductor comprising a ferroelectric buffer layer 失效
标题翻译：包含铁电缓冲层的薄膜高Tc超导体
公开(公告)号：US5434126A
公开(公告)日：1995-07-18
申请号：US217894
申请日：1994-03-25
申请人： Yo Ichikawa , Koichi Mizuno , Toshifumi Sato , Hideaki Adachi , Kentaro Setsune
发明人： Yo Ichikawa , Koichi Mizuno , Toshifumi Sato , Hideaki Adachi , Kentaro Setsune
IPC分类号： C01G1/00 , C30B23/08 , C30B25/06 , C30B29/22 , H01B12/06 , H01L39/02 , H01L39/24 , B32B9/00
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/702
摘要： A thin-film superconductor includes a substrate, a ferroelectric film, and a superconducting oxide film. The ferroelectric film extends on the substrate. The ferroelectric film is made of a crystal contains Bi and O. The superconducting oxide film extends on the ferroelectric film, and containing Bi, Cu, and an alkaline-earth metal element. The superconducting oxide film may contain at least two different alkaline-earth metal elements.
摘要翻译：薄膜超导体包括基板，铁电体膜和超导氧化物膜。铁电膜在基板上延伸。铁电体膜由含有Bi和O的晶体制成。超导氧化物膜在铁电体膜上延伸，并含有Bi，Cu和碱土金属元素。超导氧化物膜可以含有至少两种不同的碱土金属元素。

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