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1. 发明授权

US4802952A Method for manufacturing semiconductor absolute pressure sensor units 失效
标题翻译：制造半导体绝对压力传感器单元的方法
公开(公告)号：US4802952A
公开(公告)日：1989-02-07
申请号：US158750
申请日：1988-02-22
申请人： Shigeyuki Kobori , Kazuji Yamada , Ryoichi Kobayashi , Atsushi Miyazaki , Seikou Suzuki
发明人： Shigeyuki Kobori , Kazuji Yamada , Ryoichi Kobayashi , Atsushi Miyazaki , Seikou Suzuki
IPC分类号： G01L7/00 , G01L9/00 , G01L9/04 , H01L27/20 , H01L29/84 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L27/20 , G01L9/0042 , H01L29/84 , Y10T29/49103
摘要： A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed therebetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosilicate glass layer (32), the matrix shaped conductive layer (28) is used as a negative electrode during anodic bonding operation so that a high bonding strength is obtained and sodium ions contained in the borosilicate glass layer (32) are kept away from bond regions after completing the anodically bonding operation.

2. 发明授权

US4527428A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4527428A
公开(公告)日：1985-07-09
申请号：US442665
申请日：1982-12-30
申请人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Shigeyuki Kobori , Motohisa Nishihara
发明人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Shigeyuki Kobori , Motohisa Nishihara
IPC分类号： G01L9/00 , G01L13/02 , G01L9/06
CPC分类号： G01L19/147 , G01L13/025 , G01L19/0038 , G01L19/0645 , G01L9/0054
摘要： A semiconductor pressure transducer including a measuring diaphragm of semiconductor material for sensing pressure supported by a support member of the same material. An oxide layer and a thin glass layer are interposed between the measuring diaphragm and the support member.
摘要翻译：一种半导体压力传感器，包括用于感测由相同材料的支撑构件支撑的压力的半导体材料的测量膜。氧化层和薄玻璃层介于测量膜片和支撑件之间。

3. 发明授权

US4550612A Integrated pressure sensor 失效
标题翻译：集成压力传感器
公开(公告)号：US4550612A
公开(公告)日：1985-11-05
申请号：US615524
申请日：1984-05-31
申请人： Kazuji Yamada , Shigeyuki Kobori , Satoshi Shimada , Ryosaku Kanzawa , Ryoichi Kobayashi , Hideo Sato
发明人： Kazuji Yamada , Shigeyuki Kobori , Satoshi Shimada , Ryosaku Kanzawa , Ryoichi Kobayashi , Hideo Sato
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84 , G01L9/06
CPC分类号： H01L29/84 , G01L9/0054
摘要： In an integrated pressure sensor, a silicon chip for pressure detection and a substrate for supporting the silicon chip are made of the same material, the silicon chip has a thin diaphragm portion and a peripheral fixed portion thicker than the diaphragm portion, and the silicon chip is bonded to the substrate through a thin insulating film.
摘要翻译：在集成压力传感器中，用于压力检测的硅芯片和用于支撑硅芯片的基板由相同的材料制成，硅芯片具有薄膜部分和比膜部分厚的周边固定部分，硅芯片通过薄的绝缘膜与基板结合。

4. 发明授权

US4670969A Method of making silicon diaphragm pressure sensor 失效
标题翻译：制造硅膜压力传感器的方法
公开(公告)号：US4670969A
公开(公告)日：1987-06-09
申请号：US694990
申请日：1985-01-25
申请人： Kazuji Yamada , Yutaka Kobayashi , Kanji Kawakami , Satoshi Shimada , Masanori Tanabe , Shigeyuki Kobori
发明人： Kazuji Yamada , Yutaka Kobayashi , Kanji Kawakami , Satoshi Shimada , Masanori Tanabe , Shigeyuki Kobori
IPC分类号： H01L29/84 , G01L9/00 , G01P15/08 , H01L21/428
CPC分类号： G01L9/0042 , G01P15/0802 , G01P2015/084 , Y10S148/012 , Y10S148/159 , Y10S148/168 , Y10T29/42 , Y10T29/49103
摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.
摘要翻译：制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。在氧化物膜上形成多晶硅层。在形成多晶硅层之前可以部分地去除氧化膜。将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。在单晶硅层上可以外延生长另外的单晶硅层。通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

5. 发明授权

US4291293A Semiconductor absolute pressure transducer assembly and method 失效
标题翻译：半导体绝对压力传感器组件及方法
公开(公告)号：US4291293A
公开(公告)日：1981-09-22
申请号：US76813
申请日：1979-09-19
申请人： Kazuji Yamada , Seiko Suzuki , Motohisa Nishihara , Kanji Kawakami , Hideo Sato , Shigeyuki Kobori , Ryosaku Kanzawa , Minoru Takahashi , Hitoshi Minorikawa
发明人： Kazuji Yamada , Seiko Suzuki , Motohisa Nishihara , Kanji Kawakami , Hideo Sato , Shigeyuki Kobori , Ryosaku Kanzawa , Minoru Takahashi , Hitoshi Minorikawa
IPC分类号： G01L9/04 , G01L9/00 , H01L23/08 , H01L29/84 , G01L1/22
CPC分类号： G01L9/0042 , G01L9/0054
摘要： A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.
摘要翻译：一种半导体压力传感器组件，包括硅膜组件和玻璃覆盖件。硅膜组件具有通过蚀刻形成的薄硅的圆形隔膜部分和其周围的厚的支撑部分。在硅膜组件上形成压阻电桥电路的压阻元件和用于电连接的导电路径。在硅膜组件的表面上形成均匀厚度的二氧化硅钝化层，并且在钝化层的表面上进一步在硅膜组件的支撑部分上形成多晶硅层。在钝化层中，形成接触窗，多晶硅层通过该接触窗电连接到硅膜组件。使用阳极接合方法将具有圆形孔的硼硅酸盐玻璃的覆盖部件安装并接合到与硅多晶硅层接触的硅膜组件上。并且经处理的硅膜组件具有平坦的表面，在其上使用离子注入方法构建压阻元件和导电路径，或者在去除扩散过程中用作掩模的另一二氧化硅层之后重新形成二氧化硅层。

6. 发明授权

US4737787A Two-wire communication system 失效
标题翻译：双线通信系统
公开(公告)号：US4737787A
公开(公告)日：1988-04-12
申请号：US919764
申请日：1986-10-16
申请人： Yukio Ito , Kazuji Yamada , Yasushi Shimizu , Shigeyuki Kobori
发明人： Yukio Ito , Kazuji Yamada , Yasushi Shimizu , Shigeyuki Kobori
IPC分类号： H04J99/00 , G08C19/02 , H04B3/50 , H04B3/54 , H04L5/16 , G08C19/16
CPC分类号： G08C19/02 , H04B3/548 , H04L5/16 , H04B2203/5408 , H04B2203/5458 , H04B2203/547
摘要： A two-wire communication system comprising a transmitting unit having constant current characteristics for controlling an output current thereof on the basis of a signal supplied from a sensor, a receiving unit for receiving a control signal to control the sensor, a load resistor and power supply connected in series with the transmitting unit via a two-wire transmission path, and a communication unit so connected in parallel to the load resistor as to convey the output current of the transmitting unit to the process side and control a current from the power supply transmitted onto the transmission path on the basis of information supplied from the process side. With this configuration, a communication system is provided which makes possible replacing process variable transmitters in a conventional analog control system or installing process variable transmitters in a new analog control system, which makes possible remotely setting and adjusting the transmitter function by the communication unit in the above described system, which makes it possible for the control computer to control as far as terminals, and which facilitates digitization of the system.
摘要翻译：一种双线通信系统，包括具有恒定电流特性的发送单元，用于基于从传感器提供的信号来控制其输出电流;接收单元，用于接收控制信号以控制传感器;负载电阻器和电源通过双线传输路径与发射单元串联连接，以及与负载电阻并联连接的通信单元，以将发送单元的输出电流传送到处理侧，并控制来自发送的电源的电流基于从处理侧提供的信息到传输路径上。利用这种配置，提供了一种通信系统，其使得可以在常规模拟控制系统中替换过程变量发射机或在新的模拟控制系统中安装过程变量发射机，这使得可以通过通信单元远程设置和调整发射机功能上述系统，这使得控制计算机可以控制到终端，并且有助于系统的数字化。

7. 发明授权

US4495820A Capacitive pressure sensor 失效
标题翻译：电容式压力传感器
公开(公告)号：US4495820A
公开(公告)日：1985-01-29
申请号：US426084
申请日：1982-09-28
申请人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Motohisa Nishihara
发明人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Motohisa Nishihara
IPC分类号： G01L9/12 , G01L9/00 , H01G5/16 , H01L27/20 , H01G7/00 , H01L29/84
CPC分类号： H01L27/20 , G01L9/0073 , H01G5/16
摘要： A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.
摘要翻译：公开了一种电容式压力传感器及其制造方法。通过扩散处理在第一半导体衬底的主表面上形成放大器，并且其表面被绝缘膜覆盖。电极沉积在放大器的表面上，并通过形成在绝缘膜上的通孔与放大器电连接。为了形成光阑，第二半导体衬底的与电极相对配置以形成与面向电极的第二半导体衬底的表面相反的电容器的表面被部分蚀刻掉以形成凹陷。使用玻璃层将第一和第二半导体衬底彼此阳极接合。

8. 发明授权

US4480478A Pressure sensor employing semiconductor strain gauge 失效
标题翻译：采用半导体应变片的压力传感器
公开(公告)号：US4480478A
公开(公告)日：1984-11-06
申请号：US466027
申请日：1983-02-14
申请人： Hideo Sato , Motohisa Nishihara , Kazuji Yamada , Seikou Suzuki
发明人： Hideo Sato , Motohisa Nishihara , Kazuji Yamada , Seikou Suzuki
IPC分类号： G01L9/04 , G01B7/16 , G01D3/028 , G01L9/00 , G01L9/06 , G01L19/04 , H01L29/84
CPC分类号： G01L9/065
摘要： Four semiconductor strain gauges constitute a bridge circuit. This bridge circuit and a sensitivity temperature compensation circuit are connected in series, and a constant voltage is applied to the series circuit. The sensitivity temperature compensation circuit varies a voltage across the bridge circuit, depending upon temperatures. The constant voltage is divided to produce a predetermined voltage. The predetermined voltage is selected to be equal to the voltage of one output side node of the bridge circuit at the time when the semiconductor strain gauges are unstrained and at a predetermined temperature. The point of this voltage and the output side node are connected through a resistor so as to perform zero-point temperature compensation.
摘要翻译：四个半导体应变计构成桥接电路。该桥式电路和灵敏度温度补偿电路串联连接，并向串联电路施加恒定电压。灵敏度温度补偿电路根据温度改变桥接电路两端的电压。将恒定电压分压以产生预定电压。选择预定电压等于当半导体应变计未受限制并处于预定温度时桥接电路的一个输出侧节点的电压。该电压和输出侧节点通过电阻连接，以进行零点温度补偿。

9. 发明授权

US4404539A Semiconductor strain gauge 失效
标题翻译：半导体应变计
公开(公告)号：US4404539A
公开(公告)日：1983-09-13
申请号：US236934
申请日：1981-02-23
申请人： Kazuji Yamada , Motohisa Nishihara , Hideo Sato , Seiko Suzuki , Ryoichi Kobayashi
发明人： Kazuji Yamada , Motohisa Nishihara , Hideo Sato , Seiko Suzuki , Ryoichi Kobayashi
IPC分类号： G01L9/04 , G01L9/00 , G01L9/06 , H01L29/84 , G01L1/22
CPC分类号： G01L9/0054 , G01L9/065
摘要： A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.
摘要翻译：半导体应变仪布置为具有四个压阻元件的桥，每个压阻元件包括低杂质浓度扩散部分和重掺杂扩散部分。在桥中彼此相对的两个低杂质浓度扩散部分的电阻值大于其它两个较低杂质浓度部分的电阻值。选择重掺杂扩散部分的电阻，使得压阻元件的电阻相等。然而，由于低杂质部分的电阻温度系数大于高杂质部分的电阻温度系数，所以桥臂的整体电阻温度系数将不同。这允许桥接器的零点电压总是随着温度的升高而增加。

10. 发明授权

US4591780A Constant current source device having a ratio metricity between supply voltage and output current 失效
标题翻译：恒流源装置具有电源电压和输出电流之间的比率
公开(公告)号：US4591780A
公开(公告)日：1986-05-27
申请号：US559467
申请日：1983-12-08
申请人： Kazuji Yamada , Ryoichi Kobayashi , Yasuo Nagai , Isao Shimizu , Kanji Kawakami
发明人： Kazuji Yamada , Ryoichi Kobayashi , Yasuo Nagai , Isao Shimizu , Kanji Kawakami
IPC分类号： H03F3/343 , G05F3/26 , G05F3/30 , H03F3/34 , H03F3/347 , G05F3/20
CPC分类号： G05F3/30 , G05F3/265
摘要： A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage. The ratio between a voltage drop caused across the second resistor by a reference current flowing through the first resistor, the collector and emitter of the first transistor and the second resistor, and a voltage drop caused across the third resistor by an emitter current of the second transistor, which is substantially equal to a collector current of the second transistor flowing through the load, is set to a predetermined value. The emitter area of the second transistor is enlarged beyond that of the first transistor to obtain a sufficiently large output current.
摘要翻译：电流源装置控制流过负载的电流的变化率，使得电流的变化率等于电源电压波动的变化率。第一晶体管经由连接到其集电极的第一电阻器和连接到其发射极的第二电阻器馈送电源电压。第二晶体管具有连接到第一晶体管的基极的基极，连接到第三电阻器的发射极和连接到负载的集电极。通过负载，第二晶体管的集电极和发射极以及第三电阻从供电电压馈送到负载的电流。第一晶体管的集电极和基极分别连接到具有馈送有电源电压的集电极的第三晶体管的基极和发射极。通过流过第一电阻器的参考电流，第一晶体管的集电极和发射极以及第二电阻器在第二电阻器之间引起的电压降之间的比率以及由第二电阻器的发射极电流引起的第三电阻器的电压降基本上等于流过负载的第二晶体管的集电极电流的晶体管被设定为预定值。第二晶体管的发射极面积比第一晶体管的发射极面积增大，以获得足够大的输出电流。

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