会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Semiconductor pressure transducer
    • 半导体压力传感器
    • US4065971A
    • 1978-01-03
    • US701531
    • 1976-07-01
    • Michitaka ShimazoeKousuke NakamuraYasuo MatsushitaSatoshi ShimadaKazuji YamadaYukio Takahashi
    • Michitaka ShimazoeKousuke NakamuraYasuo MatsushitaSatoshi ShimadaKazuji YamadaYukio Takahashi
    • H01L29/84G01L9/00G01L9/06
    • G01L9/0054
    • A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.
    • 半导体压力传感器包括其外边缘固定的单晶半导体膜片。 当经受压力时,换能器在其中心部分产生相反极性的径向应变,并且围绕中心部分的部分靠近应变诱导区域的边缘产生。 隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。 位于彼此靠近的单个组的电阻以桥的形式组合。 形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。 然而,形成桥的相对臂的单独的电阻组的纵向方向在方向上,使得它们不会彼此正交相交。