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1. 发明授权

US07027364B2 Information storage apparatus using a magnetic medium coated with a wear-resistant thin film 失效
标题翻译：使用涂有耐磨薄膜的磁性介质的信息存储装置
公开(公告)号：US07027364B2
公开(公告)日：2006-04-11
申请号：US10232326
申请日：2002-09-03
申请人： Seung-bum Hong , Jong Up Jeon , Hyun-jung Shin
发明人： Seung-bum Hong , Jong Up Jeon , Hyun-jung Shin
IPC分类号： G11B11/00
CPC分类号： G11B9/08 , B82Y10/00 , G11B5/58 , G11B5/596 , G11B9/14 , G11B11/08 , G11B13/00
摘要： There is provided an information storage apparatus including recording medium and a head. The recording medium has an electrode layer, a magnetic layer that is stacked on the electrode layer, and a wear-resistant thin film that is stacked on the magnetic layer. The head has a conductive probe for injecting charge to record information and sensing the charge injected into the recording medium to reproduce information in a state that the conductive probe contacts the recording medium. A magnetic medium, which is coated with a wear-resistant thin film, stores charges to record information and reproduce information using an electrostatic force. Thus, it is possible to stably store highly integrated information. Also, a probe contacts a recording medium to record and reproduce information at a high speed. Thus, sensitivity and resolution can be improved.
摘要翻译：提供了一种包括记录介质和头部的信息存储装置。记录介质具有电极层，堆叠在电极层上的磁性层和堆叠在磁性层上的耐磨薄膜。头具有用于注入电荷以记录信息并感测注入到记录介质中的电荷的导电探针，以在导电探针接触记录介质的状态下再现信息。涂有耐磨薄膜的磁性介质存储电荷以记录信息并使用静电力再现信息。因此，可以稳定地存储高度集成的信息。此外，探针接触记录介质以高速记录和再现信息。因此，可以提高灵敏度和分辨率。

2. 发明授权

US06696833B2 Lorentz force microscope and method of measuring magnetic domain using Lorentz force 有权
标题翻译：洛仑兹力显微镜和使用洛伦兹力测量磁畴的方法
公开(公告)号：US06696833B2
公开(公告)日：2004-02-24
申请号：US10138643
申请日：2002-05-06
申请人： Seung-bum Hong , Jong Up Jeon , Hyun-jung Shin
发明人： Seung-bum Hong , Jong Up Jeon , Hyun-jung Shin
IPC分类号： G01R3302
CPC分类号： G01Q60/54 , G01R33/0385
摘要： A Lorentz force microscope and a method of measuring magnetic domains using Lorentz force are provided. The Lorentz force microscope includes: a conductive probe which is actuated by Lorentz force occurring due to the interaction between a magnetic field of the magnetic medium and current applied into the magnetic field; a bottom electrode which is prepared on one side of the magnetic medium, for charging the magnetic field with electricity; a scanner for supporting the magnetic medium on which the bottom electrode is prepared and actuating the magnetic medium when the conductive probe opposite to a record of the magnetic medium scans the record of the magnetic medium; and an information detector for controlling the scanner and detecting information on magnetization of the magnetic medium from motion components of the conductive probe. Directions of Lorentz force which is applied to the conductive probe are sensed in a state that the conductive probe contacts or does not contact the magnetic medium to detect magnetization directions of the magnetic domains. Thus, a magnetic domain distribution map having improved resolution can be obtained.
摘要翻译：提供洛伦兹力显微镜和使用洛伦兹力测量磁畴的方法。洛伦兹力显微镜包括：由于磁介质的磁场和施加到磁场中的电流之间的相互作用而产生的由洛伦兹力驱动的导电探针; 制备在磁介质一侧的用于对电磁场充电的底电极; 用于支撑制备底部电极的磁性介质的扫描器，当与磁性介质的记录相对的导电探针扫描磁性介质的记录时，致动磁性介质; 以及信息检测器，用于控制扫描仪并且从导电探针的运动分量检测关于磁介质的磁化的信息。在导电探针接触或不接触磁介质以检测磁畴的磁化方向的状态下感测施加到导电探针的洛伦兹力的方向。因此，可以获得具有改善的分辨率的磁畴分布图。

3. 发明授权

US06854648B2 Information storage apparatus using semiconductor probe 失效
标题翻译：使用半导体探针的信息存储装置
公开(公告)号：US06854648B2
公开(公告)日：2005-02-15
申请号：US10232621
申请日：2002-09-03
申请人： Seung-bum Hong , Jong Up Jeon , Hyun-jung Shin
发明人： Seung-bum Hong , Jong Up Jeon , Hyun-jung Shin
IPC分类号： G01Q70/10 , G01Q70/14 , G01Q80/00 , G11B9/00 , G11B9/02 , G11B9/08 , G11B9/12 , G11B9/14 , G11B11/08 , G06K7/08
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/08 , G11B9/14 , G11B9/1409 , G11B9/1463 , G11B9/149 , G11B11/08
摘要： An information storage apparatus includes a recording medium and a head. The recording medium has an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film. The head has a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium. Thus, it is possible to manufacture a small-sized information storage apparatus which is capable of repeatedly recording and reproducing information at a high speed.
摘要翻译：信息存储装置包括记录介质和磁头。记录介质具有层叠在电极层上的电极层，铁电体膜和层叠在强电介质膜上的半导体层。头部具有用于在铁电体膜上形成电介质极化的半导体探针，通过与记录介质形成p-n结，在铁电体膜上通过介电极化记录信息和再现信息。因此，可以制造能够高速重复地记录和再现信息的小型信息存储装置。

4. 发明授权

US06784475B2 Thermally stable ferroelectric memory 失效
标题翻译：热稳定铁电存储器
公开(公告)号：US06784475B2
公开(公告)日：2004-08-31
申请号：US10325731
申请日：2002-12-23
申请人： Seung-bum Hong , Hyun-jung Shin
发明人： Seung-bum Hong , Hyun-jung Shin
IPC分类号： H01L2972
CPC分类号： G11C11/22
摘要： A thermally-stable ferroelectric memory is provided. The ferroelectric memory includes a lower electrode and a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. Accordingly, a non-volatile ferroelectric memory which is thermally stable is provided, thereby realizing a reliable memory which can store information at high speed and high density and has improved memory retention.
摘要翻译：提供了热稳定的铁电存储器。铁电存储器包括形成在下电极的顶表面上的下电极和铁电层，使得具有介电极化的区域被设置为位。铁电层的厚度不大于钻头的尺寸。因此，提供了热稳定的非挥发性铁电存储器，从而实现了可以以高速度和高密度存储信息的可靠的存储器，并且具有改善的存储器保持。

5. 发明授权

US08523555B2 Apparatus comprising substrate and conductive layer 有权
标题翻译：装置包括基底和导电层
公开(公告)号：US08523555B2
公开(公告)日：2013-09-03
申请号：US13621204
申请日：2012-09-15
申请人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
发明人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
IPC分类号： B29C59/00
CPC分类号： G03F1/14 , B29C59/002 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24917
摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.
摘要翻译：提供了纳米压印母版及其制造方法。该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

6. 发明授权

US08248906B2 Ferroelectric hard disk system 失效
标题翻译：铁电硬盘系统
公开(公告)号：US08248906B2
公开(公告)日：2012-08-21
申请号：US11964328
申请日：2007-12-26
申请人： Seung-bum Hong , Sung-hoon Choa , Ju-hwan Jung , Hyoung-soo Ko , Yong Kwan Kim
发明人： Seung-bum Hong , Sung-hoon Choa , Ju-hwan Jung , Hyoung-soo Ko , Yong Kwan Kim
IPC分类号： G11B9/00
CPC分类号： G11B9/02
摘要： A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.
摘要翻译：提供了一种铁电硬盘装置，包括：铁电介质，具有设置在底部电极上的底部电极和铁电体层; 以及形成在铁电介质上方的头部，头部用于在铁电层上写入和再现信息。

7. 发明授权

US08206803B2 Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage medium 有权
标题翻译：使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置
公开(公告)号：US08206803B2
公开(公告)日：2012-06-26
申请号：US11854124
申请日：2007-09-12
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： B32B3/02
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

8. 发明授权

US07852738B2 Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatus 失效
标题翻译：提高电场传感器的灵敏度的方法，包括电场传感器的存储装置以及再现存储装置的信息的方法
公开(公告)号：US07852738B2
公开(公告)日：2010-12-14
申请号：US11965836
申请日：2007-12-28
申请人： Dae-young Jeon , Dong-ki Min , Hyoung-soo Ko , Seung-bum Hong
发明人： Dae-young Jeon , Dong-ki Min , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： G11B9/00
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1409
摘要： A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.
摘要翻译：存储装置包括铁电记录介质，电场传感器，其包括源极区域，漏极区域和将源极区域电连接到漏极区域并具有电阻的电阻区域，该电阻器根据电场的强度而变化至所述记录介质的电畴的极化电压，在所述源极区域和所述漏极区域之间施加漏极电压的电压施加单元，以及再现信号检测单元，所述再现信号检测单元包括安装在连接所述漏极区域，并且检测漏极区域和至少一个负电阻器之间的电压变化。

9. 发明授权

US07828981B2 Semiconductor probe with high resolution resistive tip and method of fabricating the same 有权
标题翻译：具有高分辨率电阻尖端的半导体探针及其制造方法
公开(公告)号：US07828981B2
公开(公告)日：2010-11-09
申请号：US11835874
申请日：2007-08-08
申请人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
发明人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
IPC分类号： C23F1/00
CPC分类号： G01Q60/30 , G01Q60/38
摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
摘要翻译：提供了具有高分辨率尖端的半导体探针及其制造方法。半导体探针包括：掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域，形成在电阻凸部的任一侧上并且重掺杂有第二杂质。

10. 发明授权

US07820311B2 Ferroelectric recording medium and writing method for the same 失效
标题翻译：铁电记录介质和写入方法相同
公开(公告)号：US07820311B2
公开(公告)日：2010-10-26
申请号：US11348485
申请日：2006-02-07
申请人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo Ko , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： G11B5/64
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

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