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1. 发明授权

US08206803B2 Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage medium 有权
标题翻译：使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置
公开(公告)号：US08206803B2
公开(公告)日：2012-06-26
申请号：US11854124
申请日：2007-09-12
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： B32B3/02
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

2. 发明申请

US20120267703A1 Information Storage Medium Using Nanocrystal Particles, Method of Manufacturing the Information Storage Apparatus Including the Information Storage Medium 有权
标题翻译：使用纳米晶粒子的信息存储介质，包括信息存储介质的信息存储设备的制造方法
公开(公告)号：US20120267703A1
公开(公告)日：2012-10-25
申请号：US13533717
申请日：2012-06-26
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： H01L29/792 , H01L21/28 , B82Y10/00 , B82Y40/00
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

3. 发明申请

US20080186837A1 INFORMATION STORAGE MEDIUM USING NANOCRYSTAL PARTICLES, METHOD OF MANUFACTURING THE INFORMATION STORAGE MEDIUM, AND INFORMATION STORAGE APPARATUS INCLUDING THE INFORMATION STORAGE MEDIUM 有权
标题翻译：使用纳米颗粒的信息存储介质，信息存储介质的制造方法和包括信息存储介质的信息存储设备
公开(公告)号：US20080186837A1
公开(公告)日：2008-08-07
申请号：US11854124
申请日：2007-09-12
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： G11B3/70 , G11B5/84
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

4. 发明授权

US08642155B2 Information storage medium using nanocrystal particles, method of manufacturing the information storage apparatus including the information storage medium 有权
标题翻译：使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置
公开(公告)号：US08642155B2
公开(公告)日：2014-02-04
申请号：US13533717
申请日：2012-06-26
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoond Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoond Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： G11B7/24
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

5. 发明申请

US20080205252A1 FERROELECTRIC INFORMATION STORAGE MEDIUM AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电磁信息存储介质及其制造方法
公开(公告)号：US20080205252A1
公开(公告)日：2008-08-28
申请号：US11872059
申请日：2007-10-15
申请人： Simon Buehlmann , Eun-joo Jang , Shin-ae Jun , Seung-bum Hong , Yong-kwan Kim
发明人： Simon Buehlmann , Eun-joo Jang , Shin-ae Jun , Seung-bum Hong , Yong-kwan Kim
IPC分类号： G11B9/02
CPC分类号： G11B9/02
摘要： A ferroelectric information storage medium having ferroelectric nanodots and a method of manufacturing the ferroelectric information storage medium are provided. The ferroelectric information storage medium includes a substrate, an electrode formed on the substrate, and ferroelectric nanodots formed on the electrode, wherein the ferroelectric nanodots are separated from each other, and a plurality of the ferroelectric nanodots form a single bit region.
摘要翻译：提供具有铁电纳米点的铁电信息存储介质和制造铁电信息存储介质的方法。铁电信息存储介质包括基板，形成在基板上的电极和形成在电极上的铁电纳米点，其中铁电纳米点彼此分离，并且多个铁电纳米点形成单个位区域。

6. 发明授权

US08248906B2 Ferroelectric hard disk system 失效
标题翻译：铁电硬盘系统
公开(公告)号：US08248906B2
公开(公告)日：2012-08-21
申请号：US11964328
申请日：2007-12-26
申请人： Seung-bum Hong , Sung-hoon Choa , Ju-hwan Jung , Hyoung-soo Ko , Yong Kwan Kim
发明人： Seung-bum Hong , Sung-hoon Choa , Ju-hwan Jung , Hyoung-soo Ko , Yong Kwan Kim
IPC分类号： G11B9/00
CPC分类号： G11B9/02
摘要： A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.
摘要翻译：提供了一种铁电硬盘装置，包括：铁电介质，具有设置在底部电极上的底部电极和铁电体层; 以及形成在铁电介质上方的头部，头部用于在铁电层上写入和再现信息。

7. 发明申请

US20080247085A1 FERROELECTRIC HARD DISK SYSTEM 失效
标题翻译：电磁硬盘系统
公开(公告)号：US20080247085A1
公开(公告)日：2008-10-09
申请号：US11964328
申请日：2007-12-26
申请人： Seung-bum Hong , Sung-hoon Choa , Ju-hwan Jung , Hyoung-soo Ko , Yong Kwan Kim
发明人： Seung-bum Hong , Sung-hoon Choa , Ju-hwan Jung , Hyoung-soo Ko , Yong Kwan Kim
IPC分类号： G11B5/127
CPC分类号： G11B9/02
摘要： A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.
摘要翻译：提供了一种铁电硬盘装置，包括：铁电介质，具有设置在底部电极上的底部电极和铁电体层; 以及形成在铁电介质上方的头部，头部用于在铁电层上写入和再现信息。

8. 发明授权

US08523555B2 Apparatus comprising substrate and conductive layer 有权
标题翻译：装置包括基底和导电层
公开(公告)号：US08523555B2
公开(公告)日：2013-09-03
申请号：US13621204
申请日：2012-09-15
申请人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
发明人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
IPC分类号： B29C59/00
CPC分类号： G03F1/14 , B29C59/002 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24917
摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.
摘要翻译：提供了纳米压印母版及其制造方法。该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

9. 发明授权

US07490016B2 Method and apparatus for calibrating position of image sensor, and method of detecting position of image sensor 有权
标题翻译：用于校准图像传感器位置的方法和装置，以及检测图像传感器位置的方法
公开(公告)号：US07490016B2
公开(公告)日：2009-02-10
申请号：US11828516
申请日：2007-07-26
申请人： Dong-ki Min , Sung-hoon Choa , Seung-bum Hong
发明人： Dong-ki Min , Sung-hoon Choa , Seung-bum Hong
IPC分类号： G01C25/00
CPC分类号： H04N5/349
摘要： A method and apparatus for calibrating a position of an image sensor, and a method of detecting the position of an image sensor are provided. The method of calibrating the position of an image sensor includes: obtaining first image information corresponding to a first position of the image sensor and obtaining second image information corresponding to a second position of the image sensor, calculating cross-correlation values between the obtained first image information and second image information; determining whether or not the calculated cross-correlation values are symmetrical; setting a driving power value of the image sensor for moving the image sensor the distance between the first position to the second position as a reference driving power value for moving the image sensor one-pixel distance, if it is determined that the cross-correlation values are not symmetrical; and calibrating the position of the image sensor by using the set driving power value.
摘要翻译：提供了用于校准图像传感器的位置的方法和装置以及检测图像传感器的位置的方法。校准图像传感器的位置的方法包括：获得与图像传感器的第一位置相对应的第一图像信息，并获得与图像传感器的第二位置对应的第二图像信息，计算所获得的第一图像之间的互相关值信息和第二图像信息; 确定所计算的互相关值是否对称; 设置图像传感器的驱动功率值，用于将图像传感器的距离移动到第一位置与第二位置之间，作为用于使图像传感器移动一像素距离的基准驱动功率值，如果确定互相关值不对称并使用设定的驱动功率值来校准图像传感器的位置。

10. 发明申请

US20130064918A1 Apparatus comprising substrate and conductive layer 有权
公开(公告)号：US20130064918A1
公开(公告)日：2013-03-14
申请号：US13621204
申请日：2012-09-15
申请人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
发明人： Hae-sung Kim , Hyoung-soo Ko , Seung-bum Hong , Jin-seung Sohn , Sung-hoon Choa , Chee-kheng Lim
IPC分类号： B29C59/00
CPC分类号： G03F1/14 , B29C59/002 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24917
摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

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