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1. 发明授权

US07828981B2 Semiconductor probe with high resolution resistive tip and method of fabricating the same 有权
标题翻译：具有高分辨率电阻尖端的半导体探针及其制造方法
公开(公告)号：US07828981B2
公开(公告)日：2010-11-09
申请号：US11835874
申请日：2007-08-08
申请人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
发明人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
IPC分类号： C23F1/00
CPC分类号： G01Q60/30 , G01Q60/38
摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
摘要翻译：提供了具有高分辨率尖端的半导体探针及其制造方法。半导体探针包括：掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域，形成在电阻凸部的任一侧上并且重掺杂有第二杂质。

2. 发明申请

US20070267385A1 SEMICONDUCTOR PROBE WITH HIGH RESOLUTION RESISTIVE TIP AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有高分辨率电阻提示的半导体探针及其制造方法
公开(公告)号：US20070267385A1
公开(公告)日：2007-11-22
申请号：US11835874
申请日：2007-08-08
申请人： Ju-hwan JUNG , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
发明人： Ju-hwan JUNG , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
IPC分类号： B44C1/22
CPC分类号： G01Q60/30 , G01Q60/38
摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
摘要翻译：提供了具有高分辨率尖端的半导体探针及其制造方法。半导体探针包括：掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域，形成在电阻凸部的任一侧上并且重掺杂有第二杂质。

3. 发明授权

US07287421B2 Semiconductor probe with high resolution resistive tip and method of fabricating the same 有权
标题翻译：具有高分辨率电阻尖端的半导体探针及其制造方法
公开(公告)号：US07287421B2
公开(公告)日：2007-10-30
申请号：US11482690
申请日：2006-07-10
申请人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
发明人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
IPC分类号： G01R31/02
CPC分类号： G01Q60/30 , G01Q60/38
摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
摘要翻译：提供了具有高分辨率尖端的半导体探针及其制造方法。半导体探针包括：掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域，形成在电阻凸部的任一侧上并且重掺杂有第二杂质。

4. 发明授权

US07602202B2 Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same 失效
标题翻译：具有掺杂控制层的高分辨率电阻尖端的半导体探针及其制造方法
公开(公告)号：US07602202B2
公开(公告)日：2009-10-13
申请号：US11652596
申请日：2007-01-12
申请人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
发明人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
IPC分类号： G01R31/02 , G01R31/26
CPC分类号： G11B9/1409 , B82Y10/00 , G11B9/149
摘要： A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.
摘要翻译：提供半导体探针及其制造方法。半导体探针包括掺杂有第一杂质的悬臂，从悬臂的端部突出并与第二杂质轻微掺杂的电阻尖端，形成在电阻尖端的突出部分两侧的掺杂控制层，以及第一和第二电极形成在掺杂控制层下面并且与第二杂质大量掺杂的区域。

5. 发明申请

US20070176616A1 Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same 失效
标题翻译：具有掺杂控制层的高分辨率电阻尖端的半导体探针及其制造方法
公开(公告)号：US20070176616A1
公开(公告)日：2007-08-02
申请号：US11652596
申请日：2007-01-12
申请人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
发明人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
IPC分类号： G01D21/00 , G01R31/02
CPC分类号： G11B9/1409 , B82Y10/00 , G11B9/149
摘要： A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.
摘要翻译：提供半导体探针及其制造方法。半导体探针包括掺杂有第一杂质的悬臂，从悬臂的端部突出并与第二杂质轻微掺杂的电阻尖端，形成在电阻尖端的突出部分两侧的掺杂控制层，以及第一和第二电极形成在掺杂控制层下面并且与第二杂质大量掺杂的区域。

6. 发明授权

US07671616B2 Semiconductor probe having embossed resistive tip and method of fabricating the same 有权
标题翻译：具有压电电阻端头的半导体探针及其制造方法
公开(公告)号：US07671616B2
公开(公告)日：2010-03-02
申请号：US11772441
申请日：2007-07-02
申请人： Ju-hwan Jung , Jae-hong Lee , Hyung-cheol Shin , Jun-soo Kim , Seung-bum Hong
发明人： Ju-hwan Jung , Jae-hong Lee , Hyung-cheol Shin , Jun-soo Kim , Seung-bum Hong
IPC分类号： G01R31/02 , G01N23/00
CPC分类号： G01Q60/30
摘要： A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.
摘要翻译：提供具有压花电阻端头的半导体探针和制造半导体探针的方法。半导体探针包括突起部，该突起部在与悬臂的长度方向交叉的第一方向上在悬臂上突出规定的高度，形成在突出部上的压电电阻端子以及形成在突起部的相反侧的第一和第二半导体电极区域在突出部分处的压电电阻尖端，其中所述悬臂掺杂有第一掺杂剂，所述第一和第二半导体电极区域和所述压电电阻尖端掺杂有与所述第一掺杂剂具有不同极性的第二掺杂剂，并且所述压花电阻尖端掺杂浓度低于第一和第二半导体电极区域。

7. 发明申请

US20070051169A1 Semiconductor probe with high resolution resistive tip and method of fabricating the same 有权
公开(公告)号：US20070051169A1
公开(公告)日：2007-03-08
申请号：US11482690
申请日：2006-07-10
申请人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
发明人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
IPC分类号： G01B5/28
CPC分类号： G01Q60/30 , G01Q60/38
摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

8. 发明授权

US5872391A Bipolar junction transistors having an increased safe operating area 失效
标题翻译：具有增加的安全操作区域的双极结晶体管
公开(公告)号：US5872391A
公开(公告)日：1999-02-16
申请号：US674092
申请日：1996-07-01
申请人： Sang-yong Lee , Soo-seong Kim , Jun-soo Kim
发明人： Sang-yong Lee , Soo-seong Kim , Jun-soo Kim
IPC分类号： H01L29/73 , H01L21/266 , H01L21/331 , H01L29/08 , H01L29/732 , H01L27/082 , H01L27/02 , H01L29/70
CPC分类号： H01L29/66295 , H01L21/266 , H01L29/0804 , H01L29/732
摘要： A bipolar junction transistor includes a semiconductor substrate having a surface, a base region of first conductivity type in the substrate, and an emitter region of second conductivity type extending from the surface into the base region to form a generally concave semiconductor junction having an apex oriented towards the surface. The emitter region preferably includes a plurality of contiguous emitter subregions extending from the surface into the base region in an arcuate manner and merging to form the generally concave semiconductor junction. The transistor preferably includes an emitter terminal electrically contacting the emitter region at an emitter contact area on the surface, the emitter contact area having a central portion substantially centered with respect to the apex of the semiconductor junction. To produce the bipolar junction transistor, a base layer of first conductivity type is provided in a semiconductor substrate, ions of second conductivity type implanted through the base layer surface in portions of the base layer surface increasing in area from a central portion of the base layer surface laterally towards outer portions of the base layer surface, and the implanted ions diffused into the base layer to thereby create the emitter region and the concave semiconductor junction. Preferably, the ions are implanted by depositing an oxide or other masking layer on the base layer, selectively etching the masking layer to expose the plurality of surface portions, and then implanting the ions into the exposed surface portions.
摘要翻译：双极结晶体管包括具有表面的半导体衬底，衬底中的第一导电类型的基极区域和从表面延伸到基极区域的第二导电类型的发射极区域，以形成具有顶点取向的大致凹入的半导体结朝向表面。发射极区域优选地包括多个连续的发射极子区域，其以弓形方式从表面延伸到基极区域并且合并以形成大体上凹的半导体结。晶体管优选地包括在表面上的发射极接触区域处电接触发射极区域的发射极端子，发射极接触区域具有基本上相对于半导体结的顶点居中的中心部分。为了制造双极结型晶体管，在半导体衬底中设置第一导电型的基极层，从基底层表面的基底层表面的部分注入的基底层表面的部分的离子从基底层的中心部分增加的第二导电型离子表面横向朝向基底层表面的外部部分，并且注入的离子扩散到基底层中，从而产生发射极区域和凹入的半导体结。优选地，通过在基底层上沉积氧化物或其它掩蔽层来注入离子，选择性地蚀刻掩模层以暴露多个表面部分，然后将离子注入到暴露的表面部分中。

9. 发明申请

US20060102624A1 Microwave oven having an illuminated guide line 有权
标题翻译：具有照明引导线的微波炉
公开(公告)号：US20060102624A1
公开(公告)日：2006-05-18
申请号：US11208649
申请日：2005-08-23
申请人： Han-gyu Ryu , Jun-soo Kim , Hyang-ki Kim , Sang-hoon Paik
发明人： Han-gyu Ryu , Jun-soo Kim , Hyang-ki Kim , Sang-hoon Paik
IPC分类号： H05B6/64
CPC分类号： H05B6/6435 , H01H9/161 , H01H9/182 , H01H2219/039 , H01H2219/0622 , H05B6/6402
摘要： A microwave oven includes a main body, a door opening and closing the main body, and a control panel placed in one side of the main body and provided with a plurality of function operators. A guide line is provided on the control panel and lights up to guide manipulation order of the function operator.
摘要翻译：一种微波炉，包括：主体，开闭主体的门;以及设置在主体一侧并具有多个功能操作器的控制面板。在控制面板上提供引导线，并点亮，以指导功能操作员的操作顺序。

10. 发明授权

US6114212A Methods of fabricating bipolar junction transistors having an increased safe operating area 有权
标题翻译：制造具有增加的安全操作区域的双极结型晶体管的方法
公开(公告)号：US6114212A
公开(公告)日：2000-09-05
申请号：US152945
申请日：1998-09-14
申请人： Sang-yong Lee , Soo-seong Kim , Jun-soo Kim
发明人： Sang-yong Lee , Soo-seong Kim , Jun-soo Kim
IPC分类号： H01L29/73 , H01L21/266 , H01L21/331 , H01L29/08 , H01L29/732
CPC分类号： H01L29/66295 , H01L21/266 , H01L29/0804 , H01L29/732
摘要： A bipolar junction transistor includes a semiconductor substrate having a surface, a base region of first conductivity type in the substrate, and an emitter region of second conductivity type extending from the surface into the base region to form a generally concave semiconductor junction having an apex oriented towards the surface. The emitter region preferably includes a plurality of contiguous emitter subregions extending from the surface into the base region in an arcuate manner and merging to form the generally concave semiconductor junction. The transistor preferably includes an emitter terminal electrically contacting the emitter region at an emitter contact area on the surface, the emitter contact area having a central portion substantially centered with respect to the apex of the semiconductor junction. To produce the bipolar junction transistor, a base layer of first conductivity type is provided in a semiconductor substrate, ions of second conductivity type implanted through the base layer surface in portions of the base layer surface increasing in area from a central portion of the base layer surface laterally towards outer portions of the base layer surface, and the implanted ions diffused into the base layer to thereby create the emitter region and the concave semiconductor junction. Preferably, the ions are implanted by depositing an oxide or other masking layer on the base layer, selectively etching the masking layer to expose the plurality of surface portions, and then implanting the ions into the exposed surface portions.
摘要翻译：双极结晶体管包括具有表面的半导体衬底，衬底中的第一导电类型的基极区域和从表面延伸到基极区域的第二导电类型的发射极区域，以形成具有顶点取向的大致凹入的半导体结朝向表面。发射极区域优选地包括多个连续的发射极子区域，其以弓形方式从表面延伸到基极区域并且合并以形成大体上凹的半导体结。晶体管优选地包括在表面上的发射极接触区域处电接触发射极区域的发射极端子，发射极接触区域具有基本上相对于半导体结的顶点居中的中心部分。为了制造双极结型晶体管，在半导体衬底中设置第一导电型的基极层，从基底层表面的基底层表面的部分注入的基底层表面的部分的离子从基底层的中心部分增加的第二导电型离子表面横向朝向基底层表面的外部部分，并且注入的离子扩散到基底层中，从而产生发射极区域和凹入的半导体结。优选地，通过在基底层上沉积氧化物或其它掩蔽层来注入离子，选择性地蚀刻掩模层以暴露多个表面部分，然后将离子注入到暴露的表面部分中。

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