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1. 发明授权

US08142960B2 Exposure method, mask data producing method, and semiconductor device manufacturing method 有权
标题翻译：曝光方法，掩模数据制作方法以及半导体装置的制造方法
公开(公告)号：US08142960B2
公开(公告)日：2012-03-27
申请号：US12536758
申请日：2009-08-06
申请人： Satoshi Nagai , Kazuya Fukuhara
发明人： Satoshi Nagai , Kazuya Fukuhara
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F7/70433
摘要： An exposure method has irradiating a mask with light based on an exposure performing condition, a first mask pattern and a second mask pattern being formed in the mask, and projecting images of the first mask pattern and second mask pattern onto a wafer through a projection lens, a lower-layer film material and a photoresist being sequentially laminated on the wafer, wherein the exposure performing condition is a condition on which, when exposure is performed on a predetermined exposure condition, the predetermined exposure condition is adjusted such that a difference between a wafer position at which a best focus is obtained for the image of the first mask pattern and a wafer position at which a best focus is obtained for the image of the second mask pattern falls within a predetermined range, the wafer position of the first mask pattern and the wafer position of the second mask pattern being predicted using film thicknesses and optical characteristics of the photoresist and the lower-layer film material.
摘要翻译：曝光方法基于曝光执行条件照射具有光的掩模，在掩模中形成第一掩模图案和第二掩模图案，并且通过投影透镜将第一掩模图案和第二掩模图案的图像投影到晶片上，下层薄膜材料和光致抗蚀剂依次层压在晶片上，其中曝光执行条件是当在预定曝光条件下进行曝光时，调整预定曝光条件使得在对于第一掩模图案的图像获得最佳聚焦的晶片位置和对于第二掩模图案的图像获得最佳聚焦的晶片位置落在预定范围内，第一掩模图案的晶片位置并且使用光致抗蚀剂和下层的膜厚度和光学特性来预测第二掩模图案的晶片位置层膜材料。

2. 发明授权

US07960075B2 Photomask unit, exposing method and method for manufacturing semiconductor device 有权
标题翻译：光掩模单元，制造半导体器件的曝光方法和方法
公开(公告)号：US07960075B2
公开(公告)日：2011-06-14
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G02B5/08
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护所述掩模基板的防护薄膜组件，其中，所述防护薄膜组件使得入射角的入射光的透射率; （0°<θ; <90°）高于入射角0°的入射光的透射率。

3. 发明申请

US20100028789A1 METHOD OF CONTROLLING EXPOSURE DEVICE, METHOD OF FABRICATING SEMICONDUCTOR, AND PHOTOMASK 审中-公开
标题翻译：控制曝光装置的方法，制造半导体的方法和光电子
公开(公告)号：US20100028789A1
公开(公告)日：2010-02-04
申请号：US12533182
申请日：2009-07-31
申请人： Satoshi NAGAI , Kazuya Fukuhara
发明人： Satoshi NAGAI , Kazuya Fukuhara
IPC分类号： G03F1/00 , H01L21/027
CPC分类号： G03F7/70566 , G03F1/44
摘要： A method of controlling exposure device according to an embodiment includes preparing a photomask in which a check pattern is formed, wherein the check pattern comprising a plurality of patterns which have a first diameter and a second diameter and have pattern dimensions being changeable after being transferred according to polarization degree of exposure light are arranged in the second diameter direction, irradiating the photomask with the exposure light having a predetermined polarization degree so as to transfer the check pattern to a transferred object, and measuring the dimensions of the images of the check pattern transferred to the transferred object so as to obtain the polarization degree.
摘要翻译：根据实施例的控制曝光装置的方法包括制备其中形成有支票图案的光掩模，其中所述支票图案包括多个图案，所述多个图案具有第一直径和第二直径，并且具有根据将偏光度曝光光排列在第二直径方向上，用具有预定偏振度的曝光光照射光掩模，以将检查图案转印到被转印物体上，并测量转印的检查图案的图像的尺寸以获得偏光度。

4. 发明申请

US20090258319A1 EXPOSURE METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：曝光方法和半导体器件制造方法
公开(公告)号：US20090258319A1
公开(公告)日：2009-10-15
申请号：US12423595
申请日：2009-04-14
申请人： Satoshi NAGAI , Kazuya Fukuhara
发明人： Satoshi NAGAI , Kazuya Fukuhara
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , G03F7/70216 , G03F7/70341
摘要： In an exposure method, an anti-reflection film and a photoresist are stacked in order on the surface of a substrate. A periodic pattern of a pitch P is formed on a pattern surface of a photomask. A medium having a refractive index n is present between a projection lens having a numerical aperture NAp and the substrate. The refractive index, coefficient of extinction and thickness of the anti-reflection film are selected so that the reflectance of exposure light of a wavelength λ at an interface between the photoresist and the anti-reflection film is less than or equal to a desired value when an angle of incidence θ is within a range determined by λ/P−NAp≦n×sin θ≦NAp. The angle of incidence θ is formed to a perpendicular line in the medium by light incident on the surface of the substrate.
摘要翻译：在曝光方法中，在基板的表面上依次层叠防反射膜和光致抗蚀剂。在光掩模的图案表面上形成间距P的周期性图案。具有折射率n的介质存在于具有数值孔径NAp的投影透镜和基板之间。选择抗反射膜的折射率，消光系数和厚度，使得在光致抗蚀剂和防反射膜之间的界面处的波长λ的曝光光的反射率小于或等于期望值，当入射角θ在由λ/ P-NAp <=nxsinθ<= NAp确定的范围内。通过入射在基板表面上的光，入射角θ在介质中形成为垂直线。

5. 发明申请

US20100144148A1 METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20100144148A1
公开(公告)日：2010-06-10
申请号：US12613213
申请日：2009-11-05
申请人： Kazuya Fukuhara , Satoshi Nagai
发明人： Kazuya Fukuhara , Satoshi Nagai
IPC分类号： H01L21/308 , G06F17/50
CPC分类号： G03F7/70608
摘要： A semiconductor device manufacturing method includes designing a resist structure including a film having antireflection function for exposure light and a resist on the film to be formed on a substrate, designing an exposure condition of the resist obtained by exposing and developing the resist such that a resist pattern is finished as designed, obtaining criteria value for estimating influence of a resist pattern upon a dimension or shape of a device pattern, the resist pattern being obtained by exposing the resist under the designed exposure condition and developing the exposed resist, the device pattern being obtained by etching the resist structure using the resist pattern as a mask, determining whether the designed exposure condition is acceptable or not based on the criteria value, and redesigning the exposure condition of the resist without changing the designed resist structure when the designed exposure condition is determined not acceptable.
摘要翻译：半导体器件制造方法包括设计包括具有用于曝光光的抗反射功能的膜的抗蚀剂结构和在要形成在衬底上的膜上的抗蚀剂，设计通过曝光和显影抗蚀剂获得的抗蚀剂的曝光条件，使得抗蚀剂图案按照设计完成，获得用于估计抗蚀剂图案对器件图案的尺寸或形状的影响的标准值，抗蚀剂图案通过在设计的曝光条件下曝光抗蚀剂并显影曝光的抗蚀剂获得，器件图案为通过使用抗蚀剂图案作为掩模蚀刻抗蚀剂结构而获得，基于标准值确定设计的曝光条件是否可接受，并且当设计的曝光条件为设计的曝光条件是否改变设计的抗蚀剂结构时，重新设计抗蚀剂的曝光条件决定不接受。

6. 发明申请

US20100035167A1 EXPOSURE METHOD, MASK DATA PRODUCING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：曝光方法，掩模数据生产方法和半导体器件制造方法
公开(公告)号：US20100035167A1
公开(公告)日：2010-02-11
申请号：US12536758
申请日：2009-08-06
申请人： Satoshi Nagai , Kazuya Fukuhara
发明人： Satoshi Nagai , Kazuya Fukuhara
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70433
摘要： An exposure method has irradiating a mask with light based on an exposure performing condition, a first mask pattern and a second mask pattern being formed in the mask, and projecting images of the first mask pattern and second mask pattern onto a wafer through a projection lens, a lower-layer film material and a photoresist being sequentially laminated on the wafer, wherein the exposure performing condition is a condition on which, when exposure is performed on a predetermined exposure condition, the predetermined exposure condition is adjusted such that a difference between a wafer position at which a best focus is obtained for the image of the first mask pattern and a wafer position at which a best focus is obtained for the image of the second mask pattern falls within a predetermined range, the wafer position of the first mask pattern and the wafer position of the second mask pattern being predicted using film thicknesses and optical characteristics of the photoresist and the lower-layer film material.
摘要翻译：曝光方法基于曝光执行条件照射具有光的掩模，在掩模中形成第一掩模图案和第二掩模图案，并且通过投影透镜将第一掩模图案和第二掩模图案的图像投影到晶片上，下层薄膜材料和光致抗蚀剂依次层压在晶片上，其中曝光执行条件是当在预定曝光条件下进行曝光时，调整预定曝光条件使得在对于第一掩模图案的图像获得最佳聚焦的晶片位置和对于第二掩模图案的图像获得最佳聚焦的晶片位置落在预定范围内，第一掩模图案的晶片位置并且使用光致抗蚀剂和下层的膜厚度和光学特性来预测第二掩模图案的晶片位置层膜材料。

7. 发明申请

US20080124633A1 PHOTOMASK UNIT, EXPOSING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：光电单元，制造半导体器件的曝光方法和方法
公开(公告)号：US20080124633A1
公开(公告)日：2008-05-29
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G03F7/20 , G03F7/26
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle ↓(0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护掩模基板的防护薄膜组件，其中防护薄膜组件使入射角↓（0°<90°）的入射光的透射率高于入射角0°的入射光的透射率。

8. 发明授权

US08293456B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08293456B2
公开(公告)日：2012-10-23
申请号：US12390157
申请日：2009-02-20
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

9. 发明授权

US08085393B2 Exposure apparatus inspection method and method for manufacturing semiconductor device 失效
标题翻译：曝光装置检查方法及制造半导体装置的方法
公开(公告)号：US08085393B2
公开(公告)日：2011-12-27
申请号：US12554782
申请日：2009-09-04
申请人： Kentaro Kasa , Takashi Sato , Kazuya Fukuhara
发明人： Kentaro Kasa , Takashi Sato , Kazuya Fukuhara
IPC分类号： G01N11/00
CPC分类号： G03F7/70641
摘要： A mask pattern includes a first pattern having a line-and-space pattern extending in a first direction, a second pattern formed as a line-and-space pattern having a larger period than the first pattern and extending in the first direction, a third pattern having a line-and-space pattern extending in a second direction, and a fourth pattern formed as a line-and-space pattern having a larger period than the third pattern and extending in the second direction. Illumination light is obliquely incident on the first pattern and the second pattern from a first oblique direction, illumination light is obliquely incident on the third pattern and the fourth pattern from a second oblique direction, and a relative distance from the first pattern to the second pattern transferred on to an image receptor and a relative distance from the third pattern to the fourth pattern transferred onto the image receptor are measured and an optical characteristic of an exposure apparatus is ascertained based on the relative distances.
摘要翻译：掩模图案包括具有沿第一方向延伸的线间距图案的第一图案，形成为具有比第一图案更长的周期并沿第一方向延伸的线间距图案的第二图案，第三图案图案具有沿第二方向延伸的线间距图案，以及形成为具有比第三图案更大的周期并沿第二方向延伸的线间距图案的第四图案。照明光从第一倾斜方向倾斜入射在第一图案和第二图案上，照明光从第二倾斜方向倾斜入射在第三图案和第四图案上，并且从第一图案到第二图案的相对距离转印到图像接收器上，并且测量从第三图案到转印到图像接收器上的第四图案的相对距离，并且基于相对距离确定曝光设备的光学特性。

10. 发明申请

US20110298116A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110298116A1
公开(公告)日：2011-12-08
申请号：US13118401
申请日：2011-05-28
申请人： Shinya MIZUSAKI , Kazuya Fukuhara
发明人： Shinya MIZUSAKI , Kazuya Fukuhara
IPC分类号： H01L23/495 , H01L21/78
CPC分类号： H01L23/49541 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L23/544 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68327 , H01L2223/54413 , H01L2223/54433 , H01L2223/54486 , H01L2224/05554 , H01L2224/27013 , H01L2224/32057 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83001 , H01L2224/83385 , H01L2224/85001 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： An object of the present invention is to improve the quality control of a semiconductor device. By forming an inscription comprising a culled or pixel skipping pattern of dimples on the upper surface of a die pad in a QFN, it is possible to confirm the inscription by X-ray inspection or the like even after individuation and specify a cavity of a resin molding die. Further, it is possible to specify the position of a device region in a lead frame. As a result, when a defect appears, it is possible to sort a defective QFN by appearance inspection and improve quality control in the assembly of a QFN.
摘要翻译：本发明的目的在于提高半导体器件的质量控制。通过在QFN中在芯片垫的上表面上形成包括凹陷的剔除或像素跳过图案的题字，即使在个体化之后也可以通过X射线检查等来确认题字，并指定树脂的空腔成型模具。此外，可以指定引线框架中的器件区域的位置。结果，当出现缺陷时，可以通过外观检查对有缺陷的QFN进行分类，并提高组装QFN的质量控制。

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