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1. 发明授权

US08575593B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08575593B2
公开(公告)日：2013-11-05
申请号：US13557915
申请日：2012-07-25
申请人： Sang Heon Han , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Sang Heon Han , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法。半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域第一导电型半导体层。

2. 发明申请

US20130026446A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130026446A1
公开(公告)日：2013-01-31
申请号：US13557915
申请日：2012-07-25
申请人： Sang Heon HAN , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Sang Heon HAN , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
IPC分类号： H01L33/04 , H01L33/60
CPC分类号： H01L33/06 , H01L33/32
摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法。半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域第一导电型半导体层。

3. 发明申请

US20120164347A1 SUSCEPTOR FOR CVD APPARATUS, CVD APPARATUS AND SUBSTRATE HEATING METHOD USING THE SAME 审中-公开
标题翻译： CVD装置的SUSCEPTOR，CVD装置和使用该装置的基板加热方法
公开(公告)号：US20120164347A1
公开(公告)日：2012-06-28
申请号：US13331737
申请日：2011-12-20
申请人： Do Young RHEE , Jin Young Lim , Sang Heon Han , Ki Sung Kim , Young Sun Kim , Sung Tae Kim
发明人： Do Young RHEE , Jin Young Lim , Sang Heon Han , Ki Sung Kim , Young Sun Kim , Sung Tae Kim
IPC分类号： C23C16/458 , C08J7/18 , B05C13/02
CPC分类号： H01L21/68757 , H01L21/68771
摘要： Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body.
摘要翻译：提供一种用于化学气相沉积（CVD）设备的感受体，包括：基座主体，其具有与其下表面相对的上表面并由透光材料形成，其上表面具有形成为接收的至少一个凹部其中的基板; 以及由感光体的上表面上的吸光材料形成的光吸收单元。

4. 发明申请

US20110198667A1 VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE 审中-公开
标题翻译：蒸气沉积系统，制造发光装置和发光装置的方法
公开(公告)号：US20110198667A1
公开(公告)日：2011-08-18
申请号：US12940399
申请日：2010-11-05
申请人： Dong Ju LEE , Hyun Wook Shim , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Dong Ju LEE , Hyun Wook Shim , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
IPC分类号： H01L33/30 , H01L33/00 , H01L33/02
CPC分类号： C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.
摘要翻译：提供了蒸镀系统，制造发光器件的方法和发光器件。根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

5. 发明申请

US20120326121A1 VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE 审中-公开
标题翻译：蒸气沉积系统，制造发光装置和发光装置的方法
公开(公告)号：US20120326121A1
公开(公告)日：2012-12-27
申请号：US13603192
申请日：2012-09-04
申请人： Dong Ju LEE , Hyun Wook Shim , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Dong Ju LEE , Hyun Wook Shim , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
IPC分类号： H01L33/04
CPC分类号： C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.
摘要翻译：提供了蒸镀系统，制造发光器件的方法和发光器件。根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

6. 发明申请

US20140224176A1 MOCVD APPARATUS 审中-公开
标题翻译： MOCVD设备
公开(公告)号：US20140224176A1
公开(公告)日：2014-08-14
申请号：US14124190
申请日：2011-08-09
申请人： Do Young Rhee , Young Sun Kim , Sung Tae Kim , Sang Heon Han , Ki Sung Kim
发明人： Do Young Rhee , Young Sun Kim , Sung Tae Kim , Sang Heon Han , Ki Sung Kim
IPC分类号： C30B25/08 , C30B25/12
CPC分类号： C30B25/08 , C23C16/44 , C23C16/4401 , C23C16/4411 , C23C16/45508 , C23C16/4584 , C30B25/12 , C30B25/14
摘要： A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.
摘要翻译：金属有机化学气相沉积（MOCVD）装置包括：反应室，包括形成具有一定体积的内部空间的室主体和密封室主体以保持气密性的室盖; 感受器，其可旋转地设置在所述室主体内并且具有形成在其上表面中的一个或多个容纳部分以容纳晶片; 盖构件，其可拆卸地设置在所述室盖的内表面上，在所述盖构件和所述基座之间形成反作用空间，并且通过联接多个区段构件而形成; 以及气体供应单元，其向所述反应空间供应反应性气体，以允许所述反应性气体在所述基座和所述盖构件之间流动。

7. 发明申请

US20140191192A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20140191192A1
公开(公告)日：2014-07-10
申请号：US14235705
申请日：2011-07-29
申请人： Sang Heon Han , Hyun Wook Shim , Je Won Kim , Chu Young Cho , Seong Ju Park , Sung Tae Kim , Jin Tae Kim , Yong Chun Kim , Sang Jun Lee
发明人： Sang Heon Han , Hyun Wook Shim , Je Won Kim , Chu Young Cho , Seong Ju Park , Sung Tae Kim , Jin Tae Kim , Yong Chun Kim , Sang Jun Lee
IPC分类号： H01L33/00 , H01L33/06
CPC分类号： H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/32
摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.
摘要翻译：提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。

8. 发明申请

US20120104432A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120104432A1
公开(公告)日：2012-05-03
申请号：US13223902
申请日：2011-09-01
申请人： Hyun Wook SHIM , Dong Ju Lee , Sung Tae Kim
发明人： Hyun Wook SHIM , Dong Ju Lee , Sung Tae Kim
IPC分类号： H01L33/42
CPC分类号： H01L33/42
摘要： A semiconductor light emitting device includes: a semiconductor light emission stacked body including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first and second conductive semiconductor layers; and a highly conductive transparent electrode formed on at least one of the first and second conductive semiconductor layers and including a transparent electrode layer formed of at least one of a transparent conductive oxide layer and a transparent conductive nitride and a graphene layer allowing light within the visible spectrum to be transmitted therethrough, the transparent electrode layer and the graphene layer being stacked.
摘要翻译：一种半导体发光器件包括：半导体发光层叠体，包括第一导电半导体层，第二导电半导体层和位于第一和第二导电半导体层之间的有源层; 以及形成在第一和第二导电半导体层中的至少一个上的高导电性透明电极，并且包括由透明导电氧化物层和透明导电氮化物中的至少一种形成的透明电极层和允许可见光内的光的石墨烯层要透射的光谱，透明电极层和石墨烯层被堆叠。

9. 发明授权

US08895356B2 Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same 有权
标题翻译：化学气相沉积装置及使用其形成半导体外延薄膜的方法
公开(公告)号：US08895356B2
公开(公告)日：2014-11-25
申请号：US13173423
申请日：2011-06-30
申请人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
发明人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
IPC分类号： H01L21/00 , H01L21/16 , C23C16/455 , C23C16/458
CPC分类号： H01L33/0075 , C23C16/45502 , C23C16/45517 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558 , C23C16/45591 , C23C16/458 , C23C16/4584 , C23C16/4585 , H01L33/0066 , H01L2933/0016
摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.
摘要翻译：化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构。

10. 发明申请

US20120009697A1 CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME 有权
标题翻译：化学蒸气沉积装置及其形成使用其的半导体外延薄膜的方法
公开(公告)号：US20120009697A1
公开(公告)日：2012-01-12
申请号：US13173423
申请日：2011-06-30
申请人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
发明人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
IPC分类号： H01L33/48 , C23C16/458 , C23C16/44
CPC分类号： H01L33/0075 , C23C16/45502 , C23C16/45517 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558 , C23C16/45591 , C23C16/458 , C23C16/4584 , C23C16/4585 , H01L33/0066 , H01L2933/0016
摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.
摘要翻译：化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构。

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