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1. 发明申请

US20140103359A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140103359A1
公开(公告)日：2014-04-17
申请号：US14125878
申请日：2011-07-28
申请人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
发明人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/025 , H01L33/20 , H01L33/24
摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.
摘要翻译：提供了一种具有增强的发光效率的半导体发光器件及其制造方法。半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。

2. 发明授权

US07301173B2 Group III-nitride light emitting device 有权
标题翻译： III族氮化物发光器件
公开(公告)号：US07301173B2
公开(公告)日：2007-11-27
申请号：US11313967
申请日：2005-12-22
申请人： Hyun Wook Shim , Suk Kil Yoon , Joong Seo Kang , Jong Hak Won
发明人： Hyun Wook Shim , Suk Kil Yoon , Joong Seo Kang , Jong Hak Won
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/32 , H01S5/22 , H01S5/305 , H01S5/3213 , H01S5/3216 , H01S5/32341 , H01S2301/173
摘要： The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.
摘要翻译：本发明提供了改善工作电压和静电放电特性的III族氮化物发光器件。 III族氮化物发光器件包括在衬底上依次形成的下n型覆盖层，电流扩展层，上n型覆盖层，有源层和p型覆盖层。电流扩展层包括SiC层。

3. 发明申请

US20060192207A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060192207A1
公开(公告)日：2006-08-31
申请号：US11247152
申请日：2005-10-12
申请人： Hyun Wook Shim , Jong Hak Won , Jin Sub Park , Joong Seo Kang , Hyun Jin Lee
发明人： Hyun Wook Shim , Jong Hak Won , Jin Sub Park , Joong Seo Kang , Hyun Jin Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/04 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and a p-type clad layer formed on the active layer. The current diffusion layer is formed by alternately stacking at least one first InAlGaN layer having a higher electron concentration than that of the n-side contact layer and at least one second InAlGaN layer having a lower electron concentration than that of the n-side contact layer.
摘要翻译：提供了具有增强的输出功率和耐静电放电的氮化物半导体发光器件。发光器件包括形成在衬底上的n侧接触层，形成在n侧接触层上的电流扩散层，形成在电流扩散层上的有源层和形成在有源层上的p型覆盖层层。通过交替堆叠具有比n侧接触层的电子浓度高的至少一个第一InAlGaN层和比n侧接触层的电子浓度低的至少一个第二InAlGaN层形成电流扩散层。

4. 发明申请

US20090173965A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED USING THE METHOD 有权
标题翻译：使用该方法制造的氮化物半导体发光器件和氮化物半导体发光器件的制造方法
公开(公告)号：US20090173965A1
公开(公告)日：2009-07-09
申请号：US12249049
申请日：2008-10-10
申请人： Hyun Wook Shim , Yong Chun Kim , Joong Seo Kang
发明人： Hyun Wook Shim , Yong Chun Kim , Joong Seo Kang
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L33/20
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和使用其制造的氮化物半导体发光器件。根据本发明的一个方面的制造氮化物半导体发光器件的方法包括：在衬底上形成掩模层; 去除掩模层的一部分以形成设置为形成发光结构的区域的开口; 通过在掩模层的每个开口上顺序地生长第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，从而形成发光结构; 以及分别形成与第一和第二导电型氮化物半导体层电连接的第一和第二电极。

5. 发明授权

US07462876B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07462876B2
公开(公告)日：2008-12-09
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

6. 发明申请

US20080251781A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20080251781A1
公开(公告)日：2008-10-16
申请号：US12081272
申请日：2008-04-14
申请人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
发明人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/12 , H01L33/30
摘要： There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型半导体区域; 形成在n型半导体区域上的有源层; 形成在有源层上的p型半导体区域; 与n型半导体区域接触的n电极; 形成在p型半导体区域上的p电极; 以及形成在n型半导体区域和p型半导体区域中的至少一个中的至少一个中间层，设置在n电极上方的中间层，其中中间层由多层结构形成，其中在沉积具有彼此不同带隙的至少三层，其中多层结构包括AlGaN层/ GaN层/ InGaN层堆叠和InGaN层/ GaN层/ AlGaN层堆叠之一。

7. 发明授权

US07297988B2 Flip chip type nitride semiconductor light emitting device 有权
标题翻译：倒装芯片型氮化物半导体发光器件
公开(公告)号：US07297988B2
公开(公告)日：2007-11-20
申请号：US11319343
申请日：2005-12-28
申请人： Seung Wan Chae , Suk Kil Yoon , Kun Yoo Ko , Hyun Wook Shim , Bong Il Yi
发明人： Seung Wan Chae , Suk Kil Yoon , Kun Yoo Ko , Hyun Wook Shim , Bong Il Yi
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
摘要翻译：本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

8. 发明申请

US20070145406A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070145406A1
公开(公告)日：2007-06-28
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

9. 发明授权

US08643037B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08643037B2
公开(公告)日：2014-02-04
申请号：US13441562
申请日：2012-04-06
申请人： Hyun Wook Shim , Suk Ho Yoon , Tan Sakong , Je Won Kim , Ki Sung Kim
发明人： Hyun Wook Shim , Suk Ho Yoon , Tan Sakong , Je Won Kim , Ki Sung Kim
IPC分类号： H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度活动层

10. 发明申请

US20120261687A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20120261687A1
公开(公告)日：2012-10-18
申请号：US13441562
申请日：2012-04-06
申请人： Hyun Wook SHIM , Suk Ho YOON , Tan SAKONG , Je Won KIM , Ki Sung KIM
发明人： Hyun Wook SHIM , Suk Ho YOON , Tan SAKONG , Je Won KIM , Ki Sung KIM
IPC分类号： H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度活动层

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