专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08895356B2 Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same 有权
标题翻译：化学气相沉积装置及使用其形成半导体外延薄膜的方法
公开(公告)号：US08895356B2
公开(公告)日：2014-11-25
申请号：US13173423
申请日：2011-06-30
申请人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
发明人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
IPC分类号： H01L21/00 , H01L21/16 , C23C16/455 , C23C16/458
CPC分类号： H01L33/0075 , C23C16/45502 , C23C16/45517 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558 , C23C16/45591 , C23C16/458 , C23C16/4584 , C23C16/4585 , H01L33/0066 , H01L2933/0016
摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.
摘要翻译：化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构。

2. 发明申请

US20120009697A1 CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME 有权
标题翻译：化学蒸气沉积装置及其形成使用其的半导体外延薄膜的方法
公开(公告)号：US20120009697A1
公开(公告)日：2012-01-12
申请号：US13173423
申请日：2011-06-30
申请人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
发明人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
IPC分类号： H01L33/48 , C23C16/458 , C23C16/44
CPC分类号： H01L33/0075 , C23C16/45502 , C23C16/45517 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558 , C23C16/45591 , C23C16/458 , C23C16/4584 , C23C16/4585 , H01L33/0066 , H01L2933/0016
摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.
摘要翻译：化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构。

3. 发明申请

US20130020555A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITING DEVICE 有权
标题翻译：基于氮化物的半导体照明器件
公开(公告)号：US20130020555A1
公开(公告)日：2013-01-24
申请号：US13555370
申请日：2012-07-23
申请人： Jong Sun Maeng , Bum Joon Kim , Ki Sung Kim , Suk Ho Yoon , Sung Tae Kim
发明人： Jong Sun Maeng , Bum Joon Kim , Ki Sung Kim , Suk Ho Yoon , Sung Tae Kim
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12
摘要： A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.
摘要翻译：氮化物系半导体发光元件包括具有Al x Ga 1-x N（0.01＆amp; N e; x＆amp; In; 0.04）的组成的抗弯曲层，以及形成在抗弯曲层上并包括第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。

4. 发明授权

US08822338B2 CVD apparatus and method of forming semiconductor superlattice structure using the same 有权
标题翻译： CVD装置及使用其形成半导体超晶格结构的方法
公开(公告)号：US08822338B2
公开(公告)日：2014-09-02
申请号：US13276729
申请日：2011-10-19
申请人： Jong Sun Maeng , Ki Sung Kim , Bum Joon Kim , Suk Ho Yoon , Hyun Seok Ryu , Sung Tae Kim
发明人： Jong Sun Maeng , Ki Sung Kim , Bum Joon Kim , Suk Ho Yoon , Hyun Seok Ryu , Sung Tae Kim
IPC分类号： H01L21/44
CPC分类号： C23C16/303 , C23C16/45574 , C23C16/45578 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.
摘要翻译：提供了一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内管，以及外管，其构造成覆盖内管以保持其密封状态; 设置在所述内管内并且容纳堆叠在其中的多个晶片的晶片保持器; 以及气体供给器，其包括设置在反应室外侧的至少一个杆管，以便向其供应反应性气体;多个分支管，连接到杆管，以将反应气体从反应室的外部引入到反应室，以及设置有分支管的多个喷嘴，以将反应气体喷射到多个相应的晶片。

5. 发明授权

US08884269B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US08884269B2
公开(公告)日：2014-11-11
申请号：US13555370
申请日：2012-07-23
申请人： Jong Sun Maeng , Bum Joon Kim , Ki Sung Kim , Suk Ho Yoon , Sung Tae Kim
发明人： Jong Sun Maeng , Bum Joon Kim , Ki Sung Kim , Suk Ho Yoon , Sung Tae Kim
IPC分类号： H01L29/06 , H01L31/00 , H01L33/32 , H01L33/12 , H01L33/02
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12
摘要： A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.
摘要翻译：氮化物系半导体发光元件包括具有Al x Ga 1-x N（0.01＆amp; N e; x＆amp; In; 0.04）的组成的抗弯曲层，以及形成在抗弯曲层上并包括第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。

6. 发明授权

US08859314B2 Method of manufacturing semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08859314B2
公开(公告)日：2014-10-14
申请号：US13523571
申请日：2012-06-14
申请人： Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
发明人： Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/007 , H01L21/67109 , H01L21/68764 , H01L21/68771 , H01L33/0079
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

7. 发明授权

US06987070B2 Method for forming low-k dielectric layer of semiconductor device 有权
标题翻译：用于形成半导体器件的低k电介质层的方法
公开(公告)号：US06987070B2
公开(公告)日：2006-01-17
申请号：US10874928
申请日：2004-06-23
申请人： Jong Sun Maeng
发明人： Jong Sun Maeng
IPC分类号： H01L21/31
CPC分类号： H01L21/02107 , C23C4/01 , C23C4/18 , C23C24/04 , H01L21/02203 , H01L21/02282 , H01L21/31695 , H01L21/7682
摘要： Disclosed is a method for forming a low-k dielectric layer of a semiconductor device. The method includes a step providing a semiconductor substrate having a predetermined pattern, a step coating porous powders having a micro size on the semiconductor by spraying the porous powders, and a step performing a heat treatment process with respect to a resultant structure, thereby forming the low-k dielectric layer. After micro-sized porous powders are coated on a semiconductor substrate, a heat treatment process is performed, so that powders are bonded to each other, thereby forming a low-k dielectric layer even if the dielectric layer has a dielectric constant equal to or less than 2.8. A signal delay time is reduced by depositing the low-k dielectric layer on the semiconductor substrate.
摘要翻译：公开了一种用于形成半导体器件的低k电介质层的方法。该方法包括提供具有预定图案的半导体衬底的步骤，通过喷射多孔粉末在半导体上阶式涂覆具有微小尺寸的多孔粉末，以及对所得结构进行热处理工艺的步骤，从而形成低k电介质层。将微尺寸多孔粉末涂覆在半导体衬底上之后，进行热处理工艺，使得粉末彼此结合，从而形成低k电介质层，即使电介质层的介电常数等于或等于比2.8。通过在半导体衬底上沉积低k电介质层来减小信号延迟时间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式