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1. 发明公开

US20240309548A1 PROCESSING SYSTEMS, CHAMBERS, AND RELATED METHODS INCLUDING TURBINES FOR ENERGY HARNESSING 审中-公开
公开(公告)号：US20240309548A1
公开(公告)日：2024-09-19
申请号：US18122537
申请日：2023-03-16
申请人： Applied Materials, Inc.
发明人： Awse MA'AYA , Ala MORADIAN
IPC分类号： C30B25/08 , C30B25/10 , C30B25/12 , C30B25/14 , F03G7/00
CPC分类号： C30B25/08 , C30B25/105 , C30B25/12 , C30B25/14 , F03G7/0252
摘要： A processing system including a chamber that includes one or more sidewalls defining an internal volume, one or more heat sources configured to generate heat, a liner disposed in the internal volume and lining one or more sidewalls, and one or more cooling channels. The processing system includes a fluid system in fluid communication with the cooling channels, the fluid system including one or more supply lines configured to supply a fluid to the cooling channels at a first temperature, and one or more return lines configured to flow the fluid from the cooling channels at a second temperature that is higher than the first temperature, and a fluid motor configured to move the fluid. The processing system includes an energy harnessing device configured to harness energy to produce electrical energy, the energy harnessing device including one or more turbines.

2. 发明授权

US12060651B2 Chamber architecture for epitaxial deposition and advanced epitaxial film applications 有权
公开(公告)号：US12060651B2
公开(公告)日：2024-08-13
申请号：US17317363
申请日：2021-05-11
申请人： Applied Materials, Inc.
发明人： Tetsuya Ishikawa , Swaminathan T. Srinivasan , Kartik Bhupendra Shah , Ala Moradian , Manjunath Subbanna , Matthias Bauer , Peter Reimer , Michael R. Rice
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/48 , C30B25/08 , C30B25/10 , C30B25/12 , H01L21/67 , H01L21/677
CPC分类号： C30B25/14 , C23C16/4412 , C23C16/455 , C23C16/45504 , C23C16/4558 , C23C16/46 , C30B25/08 , C30B25/10 , C30B25/12 , H01L21/67115 , H01L21/67742 , C23C16/4411 , C23C16/4584 , C23C16/482 , H01L21/67748
摘要： The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

3. 发明公开

US20240150932A1 METHOD OF PRODUCING EPITAXIAL LAYER WAFERS IN A CHAMBER OF A DEPOSITION REACTOR 审中-公开
公开(公告)号：US20240150932A1
公开(公告)日：2024-05-09
申请号：US18548938
申请日：2022-02-25
申请人： SILTRONIC AG
发明人： Hannes Hecht , Michael Lauer , Korbinian Lichtenegger , Walter Edmaier
IPC分类号： C30B25/08 , C23C16/44 , C30B25/16 , H01L21/02
CPC分类号： C30B25/08 , C23C16/4408 , C30B25/165 , H01L21/0262 , C30B25/20 , H01L21/02381 , H01L21/02532 , H01L21/0254
摘要： A method produces semiconductor wafers in a chamber of a deposition reactor of a plant. The method includes: repeatedly depositing an epitaxial layer on a substrate wafer in the chamber, producing semiconductor wafers, and at the same time: conditioning a replacement chamber outside the plant by purging the replacement chamber with a purge gas; interrupting the deposition of the epitaxial layer; replacing the chamber with the replacement chamber, after the conditioning, the replacement chamber being sealed and transported in a closed state to the plant or after the conditioning, the replacement chamber is transported to the plant and in this process purge gas is passed through the replacement chamber; and continuing the deposition of the epitaxial layer in the replacement chamber, producing a second number of semiconductor wafers.

4. 发明公开

US20240011189A1 GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR SOURCE VESSEL, A GAS DISTRIBUTION SYSTEM, AND A FLANGE ASSEMBLY 审中-公开
公开(公告)号：US20240011189A1
公开(公告)日：2024-01-11
申请号：US18372803
申请日：2023-09-26
申请人： ASM IP Holding B.V.
发明人： John Tolle , Joseph P. Margetis
IPC分类号： C30B25/14 , C30B25/16 , C30B25/18 , C30B25/08 , H01L21/67
CPC分类号： C30B25/14 , C30B25/16 , C30B25/18 , C30B25/08 , H01L21/67011
摘要： Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

5. 发明授权

US11859279B2 Modular reactor for microwave plasma-assisted deposition 有权
公开(公告)号：US11859279B2
公开(公告)日：2024-01-02
申请号：US16467828
申请日：2017-12-08
申请人： DIAM CONCEPT
发明人： Alix Gicquel , François Des Portes
IPC分类号： C23C16/511 , C23C16/27 , C23C16/455 , C23C16/458 , C23C16/46 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/20 , C30B29/04 , H01J37/32
CPC分类号： C23C16/274 , C23C16/4586 , C23C16/45563 , C23C16/466 , C23C16/511 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/20 , C30B29/04 , H01J37/3244 , H01J37/32201 , H01J37/32247 , H01J37/32458 , H01J37/32513 , H01J37/32715 , H01J37/32724 , H01J37/32834 , H01J2237/20214 , H01J2237/20235 , H01J2237/332
摘要： The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device.

6. 发明公开

US20230203713A1 APPARATUS FOR HEATING MULTIPLE CRUCIBLES 审中-公开
公开(公告)号：US20230203713A1
公开(公告)日：2023-06-29
申请号：US17927810
申请日：2021-04-27
申请人： Ebner Industrieofenbau GmbH
发明人： Robert EBNER , Kanaparin ARIYAWONG , Chih-Yung HSIUNG , Ghassan BARBAR
IPC分类号： C30B35/00 , F27B14/14 , C30B23/06 , C30B25/10 , C30B25/08
CPC分类号： C30B35/002 , F27B14/14 , C30B23/066 , C30B25/10 , C30B25/08
摘要： A crucible device includes a heating chamber, at least a first crucible in which a first crystal is growable, and at least a second crucible in which a second crystal is growable. The first crucible and the second crucible are arranged within the heating chamber spaced apart from each other along a horizontal and vertical and any orientational direction. The crucible device further comprises a heating system arranged within the heating chamber, wherein the heating system is configured for adjusting a temperature along the horizontal and vertical and any orientational directions.

7. 发明公开

US20230163019A1 SUBSTRATE LIFT MECHANISM AND REACTOR INCLUDING SAME 审中-公开
公开(公告)号：US20230163019A1
公开(公告)日：2023-05-25
申请号：US18100660
申请日：2023-01-24
申请人： ASM IP Holding B.V.
发明人： Eric Hill , John DiSanto
IPC分类号： H01L21/687 , H01L21/67 , C23C16/458 , C30B25/08 , C30B25/12
CPC分类号： H01L21/68742 , H01L21/67069 , H01L21/67028 , C23C16/4586 , C23C16/4584 , C30B25/08 , H01L21/67248 , C30B25/12 , H01L21/68792 , C23C16/4581 , H01L21/68757 , H01L21/67126
摘要： A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

8. 发明授权

US11649559B2 Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate 有权
公开(公告)号：US11649559B2
公开(公告)日：2023-05-16
申请号：US16266646
申请日：2019-02-04
申请人： Applied Materials, Inc.
发明人： Xinyu Bao , Chun Yan , Hua Chung , Schubert S. Chu
IPC分类号： C30B25/16 , C30B25/08 , C30B25/00 , C30B33/00 , C23C16/44 , C23C16/30 , C23C16/48 , C23C16/56 , C30B25/10 , C30B25/12 , C30B25/14 , C30B29/40 , H01L21/67 , C30B35/00 , H01L21/225 , H01L21/30 , C30B29/06
CPC分类号： C30B25/08 , C23C16/301 , C23C16/4405 , C23C16/481 , C23C16/56 , C30B25/00 , C30B25/105 , C30B25/12 , C30B25/14 , C30B25/165 , C30B29/40 , C30B33/00 , C30B35/00 , H01L21/67167 , H01L21/67196 , H01L21/67207 , H01L21/67253 , C30B29/06 , H01L21/2252 , H01L21/30 , H01L21/67201
摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

9. 发明授权

US10002760B2 Method for manufacturing SiC wafer fit for integration with power device manufacturing technology 有权
公开(公告)号：US10002760B2
公开(公告)日：2018-06-19
申请号：US15061959
申请日：2016-03-04
申请人： Dow Corning Corporation
发明人： Darren Hansen , Mark Loboda , Ian Manning , Kevin Moeggenborg , Stephan Mueller , Christopher Parfeniuk , Jeffrey Quast , Victor Torres , Clinton Whiteley
IPC分类号： C30B23/02 , H01L21/02 , C30B29/36 , C30B25/08 , C30B25/16 , C30B25/20 , C30B33/10
CPC分类号： H01L21/02529 , C30B23/025 , C30B25/08 , C30B25/165 , C30B25/20 , C30B29/36 , C30B33/10 , H01L21/02008 , H01L21/02052
摘要： A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

10. 发明申请

US20180080143A1 GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE 审中-公开
公开(公告)号：US20180080143A1
公开(公告)日：2018-03-22
申请号：US15559446
申请日：2016-03-18
申请人： FREIBERGER COMPOUND MATERIALS GMBH
发明人： Berndt WEINERT , Frank HABEL , Gunnar LEIBIGER
IPC分类号： C30B25/08 , C30B29/40 , C30B25/18
CPC分类号： C30B25/08 , C30B25/02 , C30B25/183 , C30B29/40 , C30B29/406
摘要： The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant. Therein, the compound semiconductor crystal is deposited at a surface of the substrate, while a liquid phase can form on the growing crystal.Further, auxiliary substances may be added, which can also be contained in the liquid phase, but is only incorporated in low amounts into the compound semiconductor crystal.Herein, 3D- and 2D-growth modes can be controlled in a targeted manner.The addition of auxiliary substances and the presence of a liquid phase favour these means.The product is a single crystal of the respective III-V-, IV-IV- or II-VI-compound semiconductor crystal, which, compared to respectively conventional compound semiconductor crystals has a lower concentration of inclusions or precipitates and nevertheless has no or only a very low curvature.

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