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1. 发明授权

US10002760B2 Method for manufacturing SiC wafer fit for integration with power device manufacturing technology 有权
公开(公告)号：US10002760B2
公开(公告)日：2018-06-19
申请号：US15061959
申请日：2016-03-04
申请人： Dow Corning Corporation
发明人： Darren Hansen , Mark Loboda , Ian Manning , Kevin Moeggenborg , Stephan Mueller , Christopher Parfeniuk , Jeffrey Quast , Victor Torres , Clinton Whiteley
IPC分类号： C30B23/02 , H01L21/02 , C30B29/36 , C30B25/08 , C30B25/16 , C30B25/20 , C30B33/10
CPC分类号： H01L21/02529 , C30B23/025 , C30B25/08 , C30B25/165 , C30B25/20 , C30B29/36 , C30B33/10 , H01L21/02008 , H01L21/02052
摘要： A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

2. 发明申请

US20180080143A1 GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE 审中-公开
公开(公告)号：US20180080143A1
公开(公告)日：2018-03-22
申请号：US15559446
申请日：2016-03-18
申请人： FREIBERGER COMPOUND MATERIALS GMBH
发明人： Berndt WEINERT , Frank HABEL , Gunnar LEIBIGER
IPC分类号： C30B25/08 , C30B29/40 , C30B25/18
CPC分类号： C30B25/08 , C30B25/02 , C30B25/183 , C30B29/40 , C30B29/406
摘要： The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant. Therein, the compound semiconductor crystal is deposited at a surface of the substrate, while a liquid phase can form on the growing crystal.Further, auxiliary substances may be added, which can also be contained in the liquid phase, but is only incorporated in low amounts into the compound semiconductor crystal.Herein, 3D- and 2D-growth modes can be controlled in a targeted manner.The addition of auxiliary substances and the presence of a liquid phase favour these means.The product is a single crystal of the respective III-V-, IV-IV- or II-VI-compound semiconductor crystal, which, compared to respectively conventional compound semiconductor crystals has a lower concentration of inclusions or precipitates and nevertheless has no or only a very low curvature.

3. 发明申请

US20180033659A1 GAS PURGE SYSTEM AND METHOD FOR OUTGASSING CONTROL 审中-公开
公开(公告)号：US20180033659A1
公开(公告)日：2018-02-01
申请号：US15414326
申请日：2017-01-24
申请人： Applied Materials, Inc.
发明人： Chun YAN , Xinyu BAO
IPC分类号： H01L21/67 , B08B15/00 , C30B33/00 , C30B25/12 , C30B25/08 , C30B25/14
CPC分类号： H01L21/67201 , B08B15/00 , B08B15/02 , B08B2215/003 , C23C16/45508 , C23C16/4551 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/4558 , C30B25/08 , C30B25/12 , C30B25/14 , C30B33/00 , H01L21/67017
摘要： Embodiments disclosed herein generally relate to a system, method, and apparatus for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.

4. 发明授权

US09856580B2 Apparatus for impurity layered epitaxy 有权
公开(公告)号：US09856580B2
公开(公告)日：2018-01-02
申请号：US14444640
申请日：2014-07-28
申请人： Applied Materials, Inc.
发明人： Errol Antonio C. Sanchez , Swaminathan T. Srinivasan
IPC分类号： C30B25/08 , C30B25/14 , C30B25/12 , C30B25/10 , C30B29/06 , C30B29/36 , C30B29/52
CPC分类号： C30B25/08 , C30B25/105 , C30B25/12 , C30B25/14 , C30B29/06 , C30B29/36 , C30B29/52
摘要： Embodiments of the disclosure relate to an apparatus for processing a semiconductor substrate. The apparatus includes a process chamber having a substrate support for supporting a substrate, a lower dome and an upper dome opposing the lower dome, a plurality of gas injects disposed within a sidewall of the process chamber. The apparatus includes a gas delivery system coupled to the process chamber via the plurality of gas injects, the gas delivery system includes a gas conduit providing one or more chemical species to the plurality of gas injects via a first fluid line, a dopant source providing one or more dopants to the plurality of gas injects via a second fluid line, and a fast switching valve disposed between the second fluid line and the process chamber, wherein the fast switching valve switches flowing of the one or more dopants between the process chamber and an exhaust.

5. 发明授权

US09580835B2 Multizone control of lamps in a conical lamphead using pyrometers 有权
标题翻译：使用高温计对锥形灯头中的灯进行多区域控制
公开(公告)号：US09580835B2
公开(公告)日：2017-02-28
申请号：US14987446
申请日：2016-01-04
申请人： Applied Materials, Inc.
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
IPC分类号： C30B25/10 , H01L21/67 , H01L21/02 , C30B25/08 , C30B25/14 , C30B25/16 , G01J5/10 , H01L21/66
CPC分类号： C30B25/105 , C23C16/4583 , C23C16/481 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/16 , G01J5/0007 , G01J5/10 , G01J2005/106 , H01L21/0262 , H01L21/67115 , H01L21/67248 , H01L22/10 , H01L22/20
摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
摘要翻译：描述了一种用于处理半导体衬底的方法和设备。该装置是具有光学透明的上部圆顶和下部圆顶的处理室。在处理过程中真空保持在处理室中。通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。散热灯靠近下穹顶定位，热传感器设置在灯之间。灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

6. 发明申请

US20160348274A1 METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基体的方法和装置
公开(公告)号：US20160348274A1
公开(公告)日：2016-12-01
申请号：US14724628
申请日：2015-05-28
申请人： Sumitomo Electric Industries, Ltd.
发明人： Jun GENBA , Taro NISHIGUCHI
IPC分类号： C30B25/08 , C30B29/36 , C23C16/455 , C30B25/10 , C23C16/46 , C23C16/32
CPC分类号： C30B25/08 , C23C16/325 , C23C16/452 , C23C16/45514 , C23C16/45563 , C23C16/46 , C30B25/10 , C30B29/36
摘要： A method for manufacturing a silicon carbide substrate is a method for manufacturing a silicon carbide semiconductor substrate, in which epitaxial growth is carried out in a reaction chamber, and includes the steps of arranging a base substrate composed of silicon carbide in the reaction chamber and forming an epitaxially grown film on the base substrate. In the step of forming an epitaxially grown film, the base substrate is heated while a reaction gas in which a first gas containing ammonia and a second gas containing a halide but not containing ammonia have been mixed with each other is supplied toward the base substrate. The first gas is mixed with the second gas after the first gas is heated no that ammonia contained in the first gas can be thermally decomposed.
摘要翻译：碳化硅基板的制造方法是在反应室中进行外延生长的碳化硅半导体基板的制造方法，其特征在于，包括将由碳化硅构成的基底基板配置在所述反应室内并形成在基底上的外延生长膜。在形成外延生长膜的步骤中，加热基底基板，同时将含有氨和含有卤化物但不含氨的第二气体的第一气体彼此混合的反应气体彼此混合。在第一气体被加热之后，第一气体与第二气体混合，不会使第一气体中含有的氨被热分解。

7. 发明申请

US20160189956A1 METHOD FOR MANUFACTURING SiC WAFER FIT FOR INTEGRATION WITH POWER DEVICE MANUFACTURING TECHNOLOGY 有权
标题翻译：用于与功率器件制造技术集成的SiC波导片的制造方法
公开(公告)号：US20160189956A1
公开(公告)日：2016-06-30
申请号：US15061959
申请日：2016-03-04
申请人： Dow Corning Corporation
发明人： Darren Hansen , Mark Loboda , Ian Manning , Kevin Moeggenborg , Stephan Mueller , Christopher Parfeniuk , Jeffrey Quast , Victor Torres , Clinton Whiteley
IPC分类号： H01L21/02 , C30B33/10 , C30B25/20 , C30B29/36 , C30B25/08 , C30B25/16
CPC分类号： H01L21/02529 , C30B23/025 , C30B25/08 , C30B25/165 , C30B25/20 , C30B29/36 , C30B33/10 , H01L21/02008 , H01L21/02052
摘要： A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.
摘要翻译：一种用于生产碳化硅衬底的方法，其适用于通常用于硅晶片处理的标准外延室中的外延生长。严格限制在通常用于硅衬底的室中进行处理的任何衬底上，以避免硅晶片的污染。为了充分利用标准硅加工设备，SiC基板的直径至少为150mm。为了适当生长SiC棒，生长坩埚的内部容积为该坯料的最终生长体积的6至12倍。此外，使坩埚的内部容积具有0.8至4.0的高宽比。严格限制每个底物中的污染，颗粒和缺陷。

8. 发明申请

US20150259825A1 METHOD AND APPARATUS FOR THE FABRICATION OF NANOSTRUCTURES, NETWORK OF INTERCONNECTED NANOSTRUCTURES AND NANOSTRUCTURE 审中-公开
标题翻译：用于制造纳米结构的方法和装置，互连的纳米结构和纳米结构的网络
公开(公告)号：US20150259825A1
公开(公告)日：2015-09-17
申请号：US14424633
申请日：2013-09-04
申请人： MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.
发明人： Zumin Wang
IPC分类号： C30B25/08 , C30B25/18 , C30B25/04 , C30B25/10
CPC分类号： C30B25/08 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C14/14 , C23C16/24 , C30B25/04 , C30B25/10 , C30B25/18 , H01L29/0665 , H01L29/0669 , H01L29/16 , Y10T428/249921
摘要： The present invention relates to a method for the fabrication of nanostructures, comprising the steps of: a) providing a substrate having a polycrystalline film on at least a surface thereof, wherein the polycrystalline film is a film having grain boundaries; and b) exposing the polycrystalline film to a vapor flux at a temperature equal to or above ambient temperature, wherein at least one element which is included in the vapor diffuses into the grain boundaries of the polycrystalline film resulting in growth of nanostructures at said grain boundaries. The invention further relates to a network of interconnected nanostructures, to a nanostructure, as well as to an apparatus for the fabrication of nanostructures and networks of interconnected nanostructures.
摘要翻译：本发明涉及一种制造纳米结构的方法，包括以下步骤：a）在至少其表面上提供具有多晶膜的基板，其中所述多晶膜是具有晶界的膜; 以及b）在等于或高于环境温度的温度下将所述多晶膜暴露于蒸气通量，其中包含在所述蒸气中的至少一种元素扩散到所述多晶膜的晶界中，导致在所述晶界处的纳米结构的生长。本发明还涉及互连纳米结构的网络，纳米结构的网络，以及用于制造互连纳米结构的纳米结构和网络的装置。

9. 发明授权

US08932405B2 Apparatus for low-temperature epitaxy on a plurality semiconductor substrates 有权
标题翻译：用于在多个半导体衬底上进行低温外延的装置
公开(公告)号：US08932405B2
公开(公告)日：2015-01-13
申请号：US11579276
申请日：2005-05-10
申请人： Thomas Grabolla , George Ritter , Bernd Tillack
发明人： Thomas Grabolla , George Ritter , Bernd Tillack
IPC分类号： C23C16/00 , C23C16/54 , C30B25/08
CPC分类号： C23C16/54 , C30B25/08
摘要： A reactor arrangement for layer deposition on a plurality of substrates (hereafter substrates) comprising a first reactor chamber for simultaneous cleaning the substrates, at least one second reactor chamber for depositing at least one layer on each of the substrates, a first heating device for setting the substrate temperature of the substrates in the first reactor chamber, a second heating device for setting the substrate temperature of the substrates in the second reactor chamber, a device for producing a gas atmosphere of predetermined composition and predetermined pressure, a transport device for transporting the substrates simultaneously from the first to the second reactor chamber, and a control device for controlling the heating devices and device for producing the gas atmosphere in such a way that the substrates are moved or stored in an interruption-free manner in a reducing gas atmosphere as long as the substrate temperature is above critical temperature Tc.
摘要翻译：一种反应器装置，用于在多个基板（以下称为基板）上层压沉积，该基板包括用于同时清洁基板的第一反应器室，用于在每个基板上沉积至少一层的至少一个第二反应室，用于设定的第一加热装置第一反应器室中的基板的基板温度，用于设定第二反应器室中的基板的基板温度的第二加热装置，用于制造预定组成和预定压力的气体气氛的装置，用于输送基板同时从第一反应室到第二反应室，以及控制装置，用于控制加热装置和用于产生气体气氛的装置，使得基板在还原气体气氛中以无中断的方式移动或储存，如只要衬底温度高于临界温度Tc。

10. 发明申请

US20140346638A1 Single-Crystalline Aluminum Nitride Substrate and a Manufacturing Method Thereof 有权
标题翻译：单晶氮化铝基板及其制造方法
公开(公告)号：US20140346638A1
公开(公告)日：2014-11-27
申请号：US14366020
申请日：2011-12-22
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Yuki Hiraren
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Yuki Hiraren
IPC分类号： H01L33/34 , H01L33/00
CPC分类号： H01L33/343 , C30B23/00 , C30B25/02 , C30B25/08 , C30B29/403 , H01L21/0254 , H01L33/0054
摘要： The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms/cm3 or more and less than 3×1017 atoms/cm3, a chlorine concentration is 1×1014 to 1×1017 atoms/cm3, and an absorption coefficient at 265 nm wavelength is 40 cm−1 or less.
摘要翻译：本发明涉及碳浓度为1×1014原子/ cm3以上且小于3×1017原子/ cm3，氯浓度为1×1014〜1×1017原子/ cm3的单晶氮化铝，以及在265nm波长处的吸收系数为40cm -1以下。

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