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1. 发明申请

US20120164347A1 SUSCEPTOR FOR CVD APPARATUS, CVD APPARATUS AND SUBSTRATE HEATING METHOD USING THE SAME 审中-公开
标题翻译： CVD装置的SUSCEPTOR，CVD装置和使用该装置的基板加热方法
公开(公告)号：US20120164347A1
公开(公告)日：2012-06-28
申请号：US13331737
申请日：2011-12-20
申请人： Do Young RHEE , Jin Young Lim , Sang Heon Han , Ki Sung Kim , Young Sun Kim , Sung Tae Kim
发明人： Do Young RHEE , Jin Young Lim , Sang Heon Han , Ki Sung Kim , Young Sun Kim , Sung Tae Kim
IPC分类号： C23C16/458 , C08J7/18 , B05C13/02
CPC分类号： H01L21/68757 , H01L21/68771
摘要： Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body.
摘要翻译：提供一种用于化学气相沉积（CVD）设备的感受体，包括：基座主体，其具有与其下表面相对的上表面并由透光材料形成，其上表面具有形成为接收的至少一个凹部其中的基板; 以及由感光体的上表面上的吸光材料形成的光吸收单元。

2. 发明申请

US20140224176A1 MOCVD APPARATUS 审中-公开
标题翻译： MOCVD设备
公开(公告)号：US20140224176A1
公开(公告)日：2014-08-14
申请号：US14124190
申请日：2011-08-09
申请人： Do Young Rhee , Young Sun Kim , Sung Tae Kim , Sang Heon Han , Ki Sung Kim
发明人： Do Young Rhee , Young Sun Kim , Sung Tae Kim , Sang Heon Han , Ki Sung Kim
IPC分类号： C30B25/08 , C30B25/12
CPC分类号： C30B25/08 , C23C16/44 , C23C16/4401 , C23C16/4411 , C23C16/45508 , C23C16/4584 , C30B25/12 , C30B25/14
摘要： A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.
摘要翻译：金属有机化学气相沉积（MOCVD）装置包括：反应室，包括形成具有一定体积的内部空间的室主体和密封室主体以保持气密性的室盖; 感受器，其可旋转地设置在所述室主体内并且具有形成在其上表面中的一个或多个容纳部分以容纳晶片; 盖构件，其可拆卸地设置在所述室盖的内表面上，在所述盖构件和所述基座之间形成反作用空间，并且通过联接多个区段构件而形成; 以及气体供应单元，其向所述反应空间供应反应性气体，以允许所述反应性气体在所述基座和所述盖构件之间流动。

3. 发明申请

US20130020553A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130020553A1
公开(公告)日：2013-01-24
申请号：US13553344
申请日：2012-07-19
申请人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
发明人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/32
摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.
摘要翻译：提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括带隙能量通过第一斜率减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

4. 发明授权

US08779412B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08779412B2
公开(公告)日：2014-07-15
申请号：US13553344
申请日：2012-07-19
申请人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
发明人： Sang Heon Han , Do Young Rhee , Jong Hyun Lee , Jin Young Lim , Young Sun Kim
IPC分类号： H01L33/00 , H01L29/06
CPC分类号： H01L33/06 , H01L33/32
摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.
摘要翻译：提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括带隙能量通过第一斜率减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

5. 发明授权

US08575593B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08575593B2
公开(公告)日：2013-11-05
申请号：US13557915
申请日：2012-07-25
申请人： Sang Heon Han , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Sang Heon Han , Jong Hyun Lee , Jin Young Lim , Dong Ju Lee , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法。半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域第一导电型半导体层。

6. 发明申请

US20140191192A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20140191192A1
公开(公告)日：2014-07-10
申请号：US14235705
申请日：2011-07-29
申请人： Sang Heon Han , Hyun Wook Shim , Je Won Kim , Chu Young Cho , Seong Ju Park , Sung Tae Kim , Jin Tae Kim , Yong Chun Kim , Sang Jun Lee
发明人： Sang Heon Han , Hyun Wook Shim , Je Won Kim , Chu Young Cho , Seong Ju Park , Sung Tae Kim , Jin Tae Kim , Yong Chun Kim , Sang Jun Lee
IPC分类号： H01L33/00 , H01L33/06
CPC分类号： H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/32
摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.
摘要翻译：提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。

7. 发明授权

US07888670B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07888670B2
公开(公告)日：2011-02-15
申请号：US12081272
申请日：2008-04-14
申请人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
发明人： Sang Heon Han , Sang Won Kang , Jeong Tak Oh , Seung Beom Seo , Dong Joon Kim , Hyun Wook Shim
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/12 , H01L33/30
摘要： There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型半导体区域; 形成在n型半导体区域上的有源层; 形成在有源层上的p型半导体区域; 与n型半导体区域接触的n电极; 形成在p型半导体区域上的p电极; 以及形成在n型半导体区域和p型半导体区域中的至少一个中的至少一个中间层，设置在n电极上方的中间层，其中中间层由多层结构形成，其中在沉积具有彼此不同带隙的至少三层，其中多层结构包括AlGaN层/ GaN层/ InGaN层堆叠和InGaN层/ GaN层/ AlGaN层堆叠之一。

8. 发明申请

US20140103359A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140103359A1
公开(公告)日：2014-04-17
申请号：US14125878
申请日：2011-07-28
申请人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
发明人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/025 , H01L33/20 , H01L33/24
摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.
摘要翻译：提供了一种具有增强的发光效率的半导体发光器件及其制造方法。半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。

9. 发明授权

US09166098B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US09166098B2
公开(公告)日：2015-10-20
申请号：US12338496
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00 , H01S5/30 , H01S5/00 , H01S5/32 , H01L33/06 , H01L33/02 , H01L33/32
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
摘要翻译：提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

10. 发明授权

US07192884B2 Method for manufacturing semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US07192884B2
公开(公告)日：2007-03-20
申请号：US10689629
申请日：2003-10-22
申请人： Dong Joon Kim , Byung Deuk Moon , Sang Heon Han
发明人： Dong Joon Kim , Byung Deuk Moon , Sang Heon Han
IPC分类号： H01L21/302
CPC分类号： H01S5/0421 , H01S5/2081 , H01S5/2206 , H01S5/2231 , H01S2304/00
摘要： Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a first conductive-type semiconductor substrate; (b) forming a ridge structure by selectively etching the second conductive-type clad layer; (c) forming a current blocking layer around the ridge structure, the current blocking layer having protrusions on the upper surface thereof adjacent to the ridge structure, and an amorphous and/or polycrystalline layer on a partial area thereof; and (d) removing at least the amorphous and/or polycrystalline layer from the current blocking layer, and wet-etching the upper surface of the current blocking layer so that the protrusions are reduced in size.
摘要翻译：本发明公开了一种半导体激光器件的制造方法，包括以下步骤：（a）在第一导电型半导体衬底上形成第一导电型覆盖层，有源层和第二导电型覆盖层; （b）通过选择性地蚀刻第二导电型覆盖层形成脊结构; （c）在所述脊结构周围形成电流阻挡层，所述电流阻挡层在其与所述脊结构相邻的上表面上具有突起，以及在其部分区域上的非晶和/或多晶层; 和（d）从电流阻挡层中去除至少非晶和/或多晶层，并且湿蚀刻电流阻挡层的上表面，使得突起的尺寸减小。

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