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    • 1. 发明申请
    • High repetition rate laser produced plasma EUV light source
    • US20080197297A1
    • 2008-08-21
    • US11471434
    • 2006-06-20
    • Robert P. AkinsRichard L. SandstromWilliam N. PartloIgor V. FomenkovThomas D. SteigerJohn Martin AlgotsNorbert BoweringRobert N. JacquesFrederick PalenschatJun Song
    • Robert P. AkinsRichard L. SandstromWilliam N. PartloIgor V. FomenkovThomas D. SteigerJohn Martin AlgotsNorbert BoweringRobert N. JacquesFrederick PalenschatJun Song
    • G01J3/10
    • B82Y10/00G03F7/70033H05G2/003H05G2/008
    • An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.
    • 2. 发明授权
    • High repetition rate laser produced plasma EUV light source
    • US07087914B2
    • 2006-08-08
    • US10803526
    • 2004-03-17
    • Robert P. AkinsRichard L. SandstromWilliam N. PartloIgor V. FomenkovJohn Martin AlgotsRobert N. JacquesFrederick PalenschatJun Song
    • Robert P. AkinsRichard L. SandstromWilliam N. PartloIgor V. FomenkovJohn Martin AlgotsRobert N. JacquesFrederick PalenschatJun Song
    • H01J35/20
    • B82Y10/00G03F7/70033H05G2/003H05G2/008
    • An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.
    • 3. 发明授权
    • High repetition rate laser produced plasma EUV light source
    • 高重复率激光产生等离子体EUV光源
    • US07361918B2
    • 2008-04-22
    • US11471258
    • 2006-06-20
    • Robert P. AkinsRichard L. SandstromWilliam N. PartloIgor V. Fomenkov
    • Robert P. AkinsRichard L. SandstromWilliam N. PartloIgor V. Fomenkov
    • H01J35/20
    • B82Y10/00G03F7/70033H05G2/003H05G2/008
    • An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap.
    • 公开了一种EUV光源装置和方法,其可以包括脉冲激光,其以所选择的脉冲重复频率提供激光脉冲,聚焦在期望的目标点火部位; 目标形成系统,以与激光脉冲重复率配合的选定间隔提供离散目标; 目标转向系统在目标地层系统和期望的目标点火站点之间; 以及目标跟踪系统,其提供关于目标形成系统和目标转向系统之间的目标移动的信息,使得目标转向系统能够将目标定向到期望的目标点火点。 该装置和方法可以包括具有中间壁的容器和具有低压阱的容器,其允许EUV光通过并且保持横跨低压阱的压差。
    • 10. 发明授权
    • EUV collector debris management
    • EUV收集器碎片管理
    • US08075732B2
    • 2011-12-13
    • US10979945
    • 2004-11-01
    • William N. PartloRichard L. SandstromIgor V. FomenkovAlexander I. ErshovWilliam OldhamWilliam F. MarxOscar Hemberg
    • William N. PartloRichard L. SandstromIgor V. FomenkovAlexander I. ErshovWilliam OldhamWilliam F. MarxOscar Hemberg
    • C23F1/00
    • B08B7/00
    • A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
    • 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。