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1. 发明授权

US06409826B2 Low defect density, self-interstitial dominated silicon 有权
标题翻译：用于生产低缺陷密度，自我间质主导硅的方法，其中V / Go通过控制熔体/固体界面处的热传递来控制
公开(公告)号：US06409826B2
公开(公告)日：2002-06-25
申请号：US09816015
申请日：2001-03-23
申请人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10T117/1004 , Y10T428/21
摘要： The present invention relates a process for the preparation of single crystal silicon, which contains an axially symmetric region which is free of agglomerated intrinsic point defects. The process for growing the single crystal silicon including controlling the ratio v/G0, where v is the growth velocity and G0 is the average axial temperature gradient during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. The control of V/G0 accomplished by controlling heat transfer at the melt/solid interface.
摘要翻译：本发明涉及一种制备单晶硅的方法，该方法含有一个没有聚集的固有点缺陷的轴向对称区域。生长单晶硅的过程包括控制比例v / G0，其中v是生长速度，G0是在从凝固到温度的温度范围内晶体的恒定直径部分生长期间的平均轴向温度梯度不低于约1325℃，以及晶体从凝固温度至约1050℃的冷却速率，以形成基本上没有团聚的固有点缺陷的轴对称段。通过控制熔体/固体界面处的热传递来实现V / G0的控制。

2. 发明授权

US06379642B1 Vacancy dominated, defect-free silicon 有权
标题翻译：空缺占主导地位，无缺陷硅
公开(公告)号：US06379642B1
公开(公告)日：2002-04-30
申请号：US09270366
申请日：1999-03-16
申请人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B3302
CPC分类号： C30B29/06 , C30B15/20 , C30B15/203 , C30B15/206 , C30B15/22 , C30B33/00 , C30B33/02 , H01L21/3225 , Y10T428/12528
摘要： The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region has a width which is at least about 50% of the length of the radius of the ingot, and a process for the preparation thereof.
摘要翻译：本发明涉及以锭或晶片形式的单晶硅，其包含轴向对称区域，其中空位是主要的固有点缺陷，并且基本上没有附聚的空位固有点缺陷，其中第一轴对称区域具有宽度为锭的半径长度的至少约50％，以及其制备方法。

3. 发明授权

US06632278B2 Low defect density epitaxial wafer and a process for the preparation thereof 有权
标题翻译：低缺陷密度外延晶片及其制备方法
公开(公告)号：US06632278B2
公开(公告)日：2003-10-14
申请号：US10135597
申请日：2002-04-30
申请人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B2906
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10T117/1004 , Y10T428/21
摘要： The present invention relates to an epitaxial wafer comprising single crystal silicon substrate and an epitaxial layer deposited thereon. The substrate comprises an axially symmetric region which is free of agglomerated intrinsic point defects and wherein silicon self-interstitials are the predominant intrinsic point defect in the axially symmetric region. The present invention further relates to a process for producing such an epitaxial wafer.
摘要翻译：本发明涉及包含单晶硅衬底和沉积在其上的外延层的外延晶片。衬底包括轴向对称区域，其不具有附聚的固有点缺陷，并且其中硅自填隙是轴向对称区域中的主要固有点缺陷。本发明还涉及一种用于制造这种外延晶片的方法

4. 发明授权

US06254672B1 Low defect density self-interstitial dominated silicon 失效
标题翻译：低缺陷密度自间隙主导硅
公开(公告)号：US06254672B1
公开(公告)日：2001-07-03
申请号：US09057801
申请日：1998-04-09
申请人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10T117/1004 , Y10T428/21
摘要： The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and (iii) a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. This axially symmetric region extends inwardly from the circumferential edge of the ingot, has a width as measured from the circumferential edge radially toward the central axis of the ingot which is at least about three-tenths the length of the radius of the ingot, and has a length as measured along the central axis of at least about two-tenths the length of the constant diameter portion of the ingot.
摘要翻译：本发明涉及晶锭或晶片形式的单晶硅，其包含不具有附聚固有点缺陷的轴对称区域及其制备方法。用于生长单晶硅锭的方法包括：在凝固的恒定直径部分的晶体生长过程中控制（i）生长速度v，（ii）平均轴向温度梯度G0，温度不低于约1325℃，和（iii）晶体从凝固温度至约1050℃的冷却速率，以便形成基本上不含附聚本征的轴对称段点缺陷。该轴向对称区域从锭的圆周边缘向内延伸，具有从晶锭的径向向中心轴线的圆周边缘测量的宽度，其至少为锭半径的大约三分之一十分之一，并具有沿着中心轴测量的长度至少为锭的恒定直径部分的长度的大约十分之二。

5. 发明授权

US06190631B1 Low defect density, ideal oxygen precipitating silicon 失效
标题翻译：低缺陷密度，理想的氧沉淀硅
公开(公告)号：US06190631B1
公开(公告)日：2001-02-20
申请号：US09057800
申请日：1998-04-09
申请人： Robert A. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C01B3302
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： A single crystal silicon wafer which, during the heat treatment cycles of essentially any electronic device manufacturing process, will form an ideal, non-uniform depth distribution of oxygen precipitates. The wafer is characterized in that is has a non-uniform distribution of crystal lattice vacancies, the concentration of vacancies in the bulk layer being greater than the concentration of vacancies in the surface layer and the vacancies having a concentration profile in which the peak density of the vacancies is at or near a central plane with the concentration generally decreasing from the position of peak density in the direction of a front surface of the wafer. In one embodiment, the wafer is further characterized in that it has a first axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects, wherein the first axially symmetric region comprises a central axis or has a width of at least about 15 mm. In another embodiment, the wafer is further characterized in that it has an axially symmetric region which is substantially free of agglomerated intrinsic point defects, the axially symmetric region extending radially inwardly from a circumferential edge of the wafer and having a width, as measured from the circumferential edge radially toward a center axis, which is at least about 40% the length of a radius of the wafer.
摘要翻译：在基本上任何电子器件制造过程的热处理循环期间，将形成氧沉淀物的理想的，不均匀的深度分布的单晶硅晶片。晶片的特征在于具有晶格空位不均匀的分布，体层中的空位浓度大于表面层中的空位浓度，而具有浓度分布的空位具有峰值密度空位在中心平面处或附近，其浓度通常从晶片前表面方向的峰值密度位置减小。在一个实施例中，晶片的特征还在于其具有第一轴对称区域，其中空位是主要的固有点缺陷，并且基本上没有附聚的固有点缺陷，其中第一轴对称区域包括中心轴线或具有至少约15mm的宽度。在另一个实施例中，晶片的特征还在于其具有基本上没有附聚固有点缺陷的轴向对称区域，该轴向对称区域从晶片的圆周边缘径向向内延伸并且具有从圆周边缘径向朝向中心轴线，其为晶片半径的至少约40％。

6. 发明授权

US06840997B2 Vacancy, dominsated, defect-free silicon 有权
标题翻译：空缺占主导地位，无缺陷硅
公开(公告)号：US06840997B2
公开(公告)日：2005-01-11
申请号：US10000545
申请日：2001-10-24
申请人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B15/00 , C30B15/20 , C30B15/22 , C30B29/06 , C30B33/00 , H01L21/322 , H01L29/12 , C30B31/00
CPC分类号： C30B29/06 , C30B15/20 , C30B15/203 , C30B15/206 , C30B15/22 , C30B33/00 , C30B33/02 , H01L21/3225 , Y10T428/12528
摘要： The present invention relates to a process for growing a single crystal silicon. The process including controlling a growth velocity, v, and an average axial temperature gradient, G0, during the growth of the constant diameter portion of the crystal over the temperature range from solidification to a temperature of no less than about 1325° C., to cause the formation of a first axially symmetrical region in which vacancies, upon cooling of the ingot from the solidification temperature, are the predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects, wherein the first axially symmetric region has a width of at least about 50% of the radius of the constant diameter portion of the ingot.
摘要翻译：本发明涉及生长单晶硅的方法。该方法包括在从固化到不低于约1325℃的温度的温度范围内在晶体的恒定直径部分生长期间控制生长速度v和平均轴向温度梯度G0至导致形成第一轴向对称区域，其中在从固化温度冷却锭时，空位是主要的固有点缺陷，并且基本上没有附聚的固有点缺陷，其中第一轴对称区域的宽度为至少约50％的锭的恒定直径部分的半径。

7. 发明授权

US06555194B1 Process for producing low defect density, ideal oxygen precipitating silicon 有权
标题翻译：生产低缺陷密度的工艺，理想的氧沉淀硅
公开(公告)号：US06555194B1
公开(公告)日：2003-04-29
申请号：US09705092
申请日：2000-11-02
申请人： Robert A. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B3306
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process including growing a single crystal silicon ingot from molten silicon, and as part of the growth process, controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and (iii) a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. A silicon wafer is then sliced from the ingot, subjected to a heat-treatment to form crystal lattice vacancies in the front surface and bulk layers of the wafer and cooled at a rate sufficient to cause a non-uniform vacancy concentration profile in the wafer such that a thermal treatment at a temperature in excess of 750° C., is capable of forming in the wafer a denuded zone in the front surface layer and oxygen clusters or precipitates in the bulk zone with the concentration of the oxygen clusters or precipitates in the bulk layer being primarily dependant upon the concentration of vacancies.
摘要翻译：本发明涉及一种用于制造硅晶片的方法，其在基本上任意的任何电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含轴对称区域其基本上没有附聚的固有点缺陷。该方法包括从熔融硅生长单晶硅锭，并且作为生长过程的一部分，控制（i）恒定直径部分生长期间的生长速度v，（ii）平均轴向温度梯度G0 的晶体在从凝固到不低于约1325℃的温度的温度范围内，和（iii）晶体从固化温度至约1050℃的冷却速率，以便形成基本上没有凝聚的固有点缺陷的轴对称段。然后将硅晶片从锭切片，进行热处理以在晶片的前表面和本体层中形成晶格空位，并以足以在晶片中引起不均匀的空位浓度分布的速率冷却，如在超过750℃的温度下的热处理能够在晶片中形成前表面层中的剥离区域，并且在本体区域中的氧簇或沉淀物中的氧簇或沉淀物的浓度在主体层主要取决于空位的浓度。

8. 发明授权

US5919302A Low defect density vacancy dominated silicon 失效
标题翻译：低缺陷密度空位主导硅
公开(公告)号：US5919302A
公开(公告)日：1999-07-06
申请号：US57851
申请日：1998-04-09
申请人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/20 , C30B15/22 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B33/00 , H01L21/322 , H01L21/324 , C30B33/06
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10T117/1004 , Y10T428/21
摘要： The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region comprises the central axis or has a width of at least about 15 mm, and a process for the preparation thereof.
摘要翻译：本发明涉及以锭或晶片形式的单晶硅，其包含轴向对称区域，其中空位是主要的固有点缺陷，并且基本上没有附聚的空位固有点缺陷，其中第一轴对称区域包括中心轴线或具有至少约15mm的宽度，以及其制备方法。

9. 发明授权

US07442253B2 Process for forming low defect density, ideal oxygen precipitating silicon 有权
标题翻译：形成低缺陷密度的工艺，理想的氧沉淀硅
公开(公告)号：US07442253B2
公开(公告)日：2008-10-28
申请号：US11753294
申请日：2007-05-24
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B25/12
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process either comprises exposing the wafer's front and back surfaces to different atmospheres, or thermally annealing two wafers in a face-to-face arrangement.
摘要翻译：本发明涉及一种用于制造硅晶片的方法，其在基本上任意的任何电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含轴对称区域其基本上没有附聚的固有点缺陷。该方法包括将晶片的前表面和后表面暴露于不同的气氛，或者以面对面的布置热退火两个晶片。

10. 发明授权

US07229693B2 Low defect density, ideal oxygen precipitating silicon 有权
标题翻译：低缺陷密度，理想的氧沉淀硅
公开(公告)号：US07229693B2
公开(公告)日：2007-06-12
申请号：US11058996
申请日：2005-02-16
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： B32B9/04
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.
摘要翻译：本发明涉及一种硅晶片，其在基本上任何任意的电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含基本上为空的轴对称区域的团聚内在点缺陷。

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