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1. 发明授权

US06835245B2 Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor 有权
标题翻译：制造外延晶片的方法及其制造方法
公开(公告)号：US06835245B2
公开(公告)日：2004-12-28
申请号：US09883922
申请日：2001-06-20
申请人： Toshiaki Ono , Tadami Tanaka , Eiichi Asayama , Hideshi Nishikawa , Masataka Horai
发明人： Toshiaki Ono , Tadami Tanaka , Eiichi Asayama , Hideshi Nishikawa , Masataka Horai
IPC分类号： C30B3302
CPC分类号： C30B29/06 , C30B15/206
摘要： Epitaxial wafers showing marked IG effects can be manufactured from silicon single crystals doped or not doped with nitrogen without requiring any additional heat treatment process step while reducing the density of epitaxial layer defects. According to the first manufacturing method, an epitaxial layer is allowed to grow on the surface of a wafer sliced from a single crystal produced by employing a cooling rate of not less than 7.3° C./min in the temperature range of 1200-1050° C. in the step of pulling up thereof. According to the second manufacturing method, an epitaxial layer is allowed to grow on the surface of a silicon wafer sliced from a silicon single crystal doped with 1×1012 atoms/cm3 to 1×1014 atoms/cm3 as produced by employing a cooling rate of not less than 2.7° C./min in the temperature range of 1150-1020° C. and then a cooling rate of not more than 1.2° C./min in the temperature range of 1000-850° C. in the step of pulling up thereof.
摘要翻译：显示出显着的IG效应的外延晶片可以由掺杂或不掺杂氮的单晶硅制造，而不需要任何额外的热处理工艺步骤，同时降低外延层缺陷的密度。根据第一种制造方法，允许外延层在从在1200-1050°的温度范围内采用不低于7.3℃/分钟的冷却速率制备的单晶切片的晶片的表面上生长 C.在拉起它的步骤。根据第二制造方法，允许外延层在从掺杂有1×10 12原子/ cm 3至1×10 14原子/ cm 3的硅单晶切片的硅晶片的表面上生长，通过在1150-1020℃的温度范围内使用不低于2.7℃/分钟的冷却速率，然后在1000℃的温度范围内的冷却速度不超过1.2℃/ 850℃。

2. 发明授权

US06793731B2 Method for recrystallizing an amorphized silicon germanium film overlying silicon 失效
标题翻译：将硅非晶硅化硅膜再结晶的方法
公开(公告)号：US06793731B2
公开(公告)日：2004-09-21
申请号：US10098757
申请日：2002-03-13
申请人： Sheng Teng Hsu , Jong-Jan Lee , Jer-shen Maa , Douglas J. Tweet
发明人： Sheng Teng Hsu , Jong-Jan Lee , Jer-shen Maa , Douglas J. Tweet
IPC分类号： C30B3302
CPC分类号： H01L21/26506 , C30B1/023 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02513 , H01L21/02532 , H01L21/02694
摘要： A method is provided for forming a relaxed single-crystal silicon germanium film on a silicon substrate. Also provided is a film structure with a relaxed layer of graded silicon germanium on a silicon substrate. The method comprises: providing a silicon (Si) substrate with a top surface; growing a graded layer of strained single-crystal Si1−xGex having a bottom surface overlying the Si substrate top surface and a top surface, where x increases with the Si1−xGex layer thickness in the range between 0.03 and 0.5, wherein the Si1−xGex layer has a thickness in the range of 2500 Å to 5000 Å; implanting hydrogen ions; penetrating the Si substrate with the hydrogen ions a depth in the range of 300 Å to 1000 Å; implanting heavy ions, such as Si or Ge, into the Si1−xGex; in response to the heavy ion implantation, amorphizing a first region of the Si1−xGex layer adjacent the Si substrate; annealing; in response to the annealing, forming a hydrogen platelets layer between the Si substrate and the Si1−xGex layer; forming a silicon layer with a high density of hydrogen underlying the hydrogen platelets layer; and, forming a relaxed single-crystal Si1−xGex region, free of defects.
摘要翻译：提供了一种在硅衬底上形成松弛的单晶硅锗膜的方法。还提供了在硅衬底上具有缓和的渐变硅锗层的膜结构。该方法包括：提供具有顶表面的硅（Si）衬底; 生长具有覆盖Si衬底顶表面的底表面和顶表面的应变单晶Si1-xGex的分级层，其中x随着Si1-xGex层厚度在0.03和0.5之间的范围增加，其中Si1-xGex 层的厚度在2500埃至5000埃的范围内; 植入氢离子; 用氢离子穿透Si衬底，深度在300埃至1000埃的范围内; 将诸如Si或Ge的重离子注入到Si1-xGex中; 响应于重离子注入，使与Si衬底相邻的Si1-xGex层的第一区域非晶化; 退火; 响应于退火，在Si衬底和Si1-xGex层之间形成氢血小板层; 在氢薄膜层下形成具有高密度氢的硅层; 并形成松弛的单晶Si1-xGex区域，没有缺陷。

3. 发明授权

US06814801B2 Method for producing semi-insulating resistivity in high purity silicon carbide crystals 有权
标题翻译：在高纯度碳化硅晶体中生产半绝缘电阻率的方法
公开(公告)号：US06814801B2
公开(公告)日：2004-11-09
申请号：US10064232
申请日：2002-06-24
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Mueller , Valeri F. Tsvetokov
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Mueller , Valeri F. Tsvetokov
IPC分类号： C30B3302
CPC分类号： H01L21/324 , C30B29/36 , C30B33/00
摘要： A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defect related deep level states to a temperature above the temperatures required for CVD growth of silicon carbide from source gases, but less than the sublimation temperature of silicon carbide under the ambient conditions to thereby thermodynamically increase the number of point defects and resulting states in the crystal, and then cooling the heated crystal to approach room temperature at a sufficiently rapid rate to maintain a concentration of point defects in the cooled crystal that remains greater than the first concentration.
摘要翻译：公开了一种在没有相关量的深层捕获元件的情况下生产高质量半绝缘碳化硅晶体的方法。本发明包括以下步骤：将具有与点缺陷有关的深层次状态的第一浓度的碳化硅晶体加热到高于来自源气体的碳化硅的CVD生长所需温度的温度，但小于碳化硅的升华温度从而热力学地增加晶体中的点缺陷数量和结果状态，然后以足够快的速率将加热的晶体冷却至接近室温，以保持冷却的晶体中的点缺陷的浓度保持大于第一浓度。

4. 发明授权

US06599359B2 Method for manufacturing a semiconductor device 失效
公开(公告)号：US06599359B2
公开(公告)日：2003-07-29
申请号：US09734034
申请日：2000-12-12
申请人： Hiroki Adachi , Akira Takenouchi , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Yasuhiko Takemura
IPC分类号： C30B3302
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026
摘要： A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.

5. 发明授权

US06702891B2 Method of heat treating fluoride crystal 失效
标题翻译：氟化物晶体热处理方法
公开(公告)号：US06702891B2
公开(公告)日：2004-03-09
申请号：US09521381
申请日：2000-03-08
申请人： Takao Chiba
发明人： Takao Chiba
IPC分类号： C30B3302
CPC分类号： C30B33/00 , C30B29/12
摘要： In order to shorten the annealing time to thereby reduce the production cost of a fluoride crystal, the method of heat treating a fluoride crystal of the present invention comprises the steps of: raising the temperature of a fluoride crystal; reducing the raised temperature of the fluoride crystal at a first temperature reducing rate; and then reducing the temperature of the fluoride crystal at a second temperature reducing rate which is larger than the first temperature reducing rate.
摘要翻译：为了缩短退火时间从而降低氟化物晶体的生产成本，本发明的氟化物晶体的热处理方法包括以下步骤：提高氟化物晶体的温度; 在第一降温速率下降低氟化物晶体的升高温度; 然后以比第一降温率大的第二降温速率降低氟化物晶体的温度。

6. 发明授权

US06503594B2 Silicon wafers having controlled distribution of defects and slip 有权
标题翻译：硅晶片具有受控的缺陷分布和滑动
公开(公告)号：US06503594B2
公开(公告)日：2003-01-07
申请号：US09893804
申请日：2001-06-28
申请人： Jea-gun Park
发明人： Jea-gun Park
IPC分类号： C30B3302
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10S117/911 , Y10T117/1004 , Y10T117/1008 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088 , Y10T428/12458 , Y10T428/12528 , Y10T428/21
摘要： A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere comprising ammonia (NH3) and argon (Ar) at temperatures below about 1200° C. Using such a rapid thermal annealing process, slip dislocation can be reduced in the device regions of the wafer, and silicon dioxide sublimation on the rapid thermal annealing chamber also can be reduced.
摘要翻译：提供了具有受控的缺陷分布的硅晶片，其中具有从晶片表面向内的足够深度的裸露区域在晶片的主体区域中与高吸杂效应组合。在硅晶片中，作为固有吸气部位的氧析出物显示垂直分布。从晶片的顶表面到底表面的氧沉淀浓度分布包括在晶片的顶表面和底表面的第一和第二预定深度处的第一和第二峰，在晶片的顶表面和底表面之间的裸露区域第一和第二峰，以及在第一和第二峰之间的对应于晶片的体区的凹区。对于这样的氧沉淀浓度分布，在低于约1200℃的温度下，在包含氨（NH 3）和氩（Ar）的气体混合气体中将晶片暴露于快速热退火工艺。使用这种快速热退火工艺，滑动可以在晶片的器件区域中减少位错，并且可以减少快速热退火室上的二氧化硅升华。

7. 发明授权

US06432197B1 Process for the preparation of non-oxygen precipitating Czochralski silicon wafers 有权
公开(公告)号：US06432197B1
公开(公告)日：2002-08-13
申请号：US09929585
申请日：2001-08-14
申请人： Robert J. Falster
发明人： Robert J. Falster
IPC分类号： C30B3302
摘要： The present invention relates to a process for the treatment of Czochralski single crystal silicon wafers to dissolve existing oxygen clusters and precipitates, while preventing their formation upon a subsequent oxygen precipitation heat treatment. The process comprises rapid thermal annealing the wafer to dissolve existing oxygen clusters and precipitates. The rapid thermal anneal is performed in an atmosphere capable of oxidizing the surface of the wafer thereby causing an inward flux of silicon self-interstitial atoms in order to reduce the number density of vacancies in the single crystal silicon to a value such that oxygen precipitates will not form if the wafer is subsequently subjected to an oxygen precipitation heat-treatment.

8. 发明授权

US06379642B1 Vacancy dominated, defect-free silicon 有权
标题翻译：空缺占主导地位，无缺陷硅
公开(公告)号：US06379642B1
公开(公告)日：2002-04-30
申请号：US09270366
申请日：1999-03-16
申请人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B3302
CPC分类号： C30B29/06 , C30B15/20 , C30B15/203 , C30B15/206 , C30B15/22 , C30B33/00 , C30B33/02 , H01L21/3225 , Y10T428/12528
摘要： The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region has a width which is at least about 50% of the length of the radius of the ingot, and a process for the preparation thereof.
摘要翻译：本发明涉及以锭或晶片形式的单晶硅，其包含轴向对称区域，其中空位是主要的固有点缺陷，并且基本上没有附聚的空位固有点缺陷，其中第一轴对称区域具有宽度为锭的半径长度的至少约50％，以及其制备方法。

9. 发明授权

US06811606B2 Manufacturing method for calcium fluoride and calcium fluoride for photolithography 有权
公开(公告)号：US06811606B2
公开(公告)日：2004-11-02
申请号：US09982834
申请日：2001-10-22
申请人： Shigeru Sakuma , Tsutomu Mizugaki , Kazuo Kimura , Shuuichi Takano
发明人： Shigeru Sakuma , Tsutomu Mizugaki , Kazuo Kimura , Shuuichi Takano
IPC分类号： C30B3302
CPC分类号： G03F7/70958 , C30B29/12 , C30B33/00 , G02B1/02 , G03F7/70966 , Y10S117/906
摘要： A manufacturing method for a single crystal of calcium fluoride by which it is possible to obtain a single crystal of calcium fluoride with adequately small double refraction, which can be used in optical systems for photolithography, and in particular, a single crystal of calcium fluoride with a large diameter (ø200 mm or larger) having superior optical properties, which can be used for photolithography with a wavelength of 250 nm or less. A manufacturing method for a single crystal of calcium fluoride, having its optical properties improved through an annealing process in which a single crystal of calcium fluoride is contained in a sealable container, and said container is sealed and vacuumed, followed by, a process of heating with a heater arranged external to said container so that the temperature inside said container is raised to a first temperature, which is lower than the melting point of said single crystal of calcium fluoride, a process by which the temperature inside said container is maintained at said first temperature for a designated period of time, and a process by which the temperature inside said container is lowered to room temperature, wherein, the maximum temperature of the annealing process is set to be a first temperature within the range of 1020 to 1150° C. Also provided is a manufacturing method for a single crystal of calcium fluoride having its optical properties improved through an annealing process such that, its maximum temperature during the thermal process is set to a first temperature which is within the range of 1020 to 1150° C., and which is maintained for a designated period of time, and its cooling speed for reaching a second temperature, which is in the range of (or around) 600 to 800° C., from said first temperature is set to be 1.2° C./hour or less, or its cooling speed for reaching a second temperature, which is in the range of (or around) 700 to 900° C., from said first temperature is set to be 1.2° C./hour or less.

10. 发明授权

US06689209B2 Process for preparing low defect density silicon using high growth rates 有权
标题翻译：使用高增长率制备低缺陷密度硅的工艺
公开(公告)号：US06689209B2
公开(公告)日：2004-02-10
申请号：US09871255
申请日：2001-05-31
申请人： Robert J. Falster , Vladimir Voronkov
发明人： Robert J. Falster , Vladimir Voronkov
IPC分类号： C30B3302
CPC分类号： C30B15/203 , A61K31/427 , A61K31/513 , A61K31/675 , A61K31/7008 , A61K31/704 , C30B29/06
摘要： The present invention relates to a process for growing a single crystal silicon ingot which contains an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process comprises (i) forming a region within the constant diameter portion in which vacancies are the predominant intrinsic point defect; (ii) heating the lateral surface of the ingot to cause a thermally induced inward flux of silicon self interstitial atoms into the region from the heated surface which reduces the concentration of vacancies in the region; and (iii) maintaining the temperature of the region in excess of the temperature, TA, at which agglomeration of vacancy point defects into agglomerated defects occurs during the period of time between the formation of the region and the reduction of the concentration of vacancies in the region.
摘要翻译：本发明涉及一种用于生长单晶硅锭的方法，该方法包含基本上没有聚集的固有点缺陷的轴对称区域。该方法包括（i）在恒定直径部分内形成空位是主要固有点缺陷的区域; （ii）加热锭的侧表面以引起热自发的向内通过的硅自间隙原子进入到加热表面的区域中，这降低了该区域中的空位浓度; 并且（iii）保持该区域的温度超过温度TA，其中在形成该区域期间的时间段内空位点缺陷的附聚发生在聚集缺陷中，并且在地区。

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