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1. 发明授权

US06204152B1 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor 有权
标题翻译：理想的氧气沉淀硅晶片和氧气外扩散工艺
公开(公告)号：US06204152B1
公开(公告)日：2001-03-20
申请号：US09340489
申请日：1999-06-30
申请人： Robert Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
发明人： Robert Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
IPC分类号： H01L21322
CPC分类号： H01L21/3225 , Y10S257/913 , Y10T428/21 , Y10T428/249969
摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, a central plane between the front and back surfaces, and a sink for crystal lattice vacancies at the front surface. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the crystal lattice vacancy sink to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.
摘要翻译：一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。晶片具有前表面，后表面，前表面和后表面之间的中心平面，以及在前表面处用于晶格空位的凹槽。在该过程中，对晶片进行热处理以形成晶格空位，空位形成在大部分硅中。然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到晶格空位宿的速率冷却，以产生具有空位浓度分布的晶片，其中峰值密度处于或接近中心平面，其浓度通常在晶片前表面的方向上减小。

2. 发明授权

US06180220B2 Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor 失效
标题翻译：理想的氧气沉淀硅片及其无氧扩散工艺
公开(公告)号：US06180220B2
公开(公告)日：2001-01-30
申请号：US09030110
申请日：1998-02-25
申请人： Robert Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
发明人： Robert Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
IPC分类号： B32B300
CPC分类号： H01L21/3225 , Y10S257/913 , Y10T428/21 , Y10T428/249969
摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.
摘要翻译：一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。该晶片具有前表面，后表面和在前表面和后表面之间的中心平面。在该过程中，对晶片进行热处理以形成晶格空位，空位形成在大部分硅中。然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到前表面的速率冷却，以产生具有空位浓度分布的晶片，其中峰密度在或者靠近中心平面，其浓度通常在晶片前表面的方向上减小。

3. 发明授权

US5403406A Silicon wafers having controlled precipitation distribution 失效
标题翻译：具有受控沉淀分布的硅晶片
公开(公告)号：US5403406A
公开(公告)日：1995-04-04
申请号：US64013
申请日：1993-05-13
申请人： Robert Falster , Giancarlo Ferrero , Graham Fisher , Massimiliano Olmo , Marco Pagani
发明人： Robert Falster , Giancarlo Ferrero , Graham Fisher , Massimiliano Olmo , Marco Pagani
IPC分类号： C30B33/02 , H01L21/02 , H01L21/26 , H01L21/322 , H01L21/324
CPC分类号： H01L21/3225
摘要： A silicon wafer containing oxygen precipitate nucleation centers (or oxygen precipitates) and having a first face, a second face, and a central plane equidistant between the first and second faces. The nucleation centers (or oxygen precipitates) have a non-uniform distribution between the first and second faces with a maximum density of the nucleation centers (or oxygen precipitates) being in a region which is between the first face and the central plane and nearer to the first face than the central plane. The density of the nucleation centers (or oxygen precipitates) increases from the first face to the region of maximum density and decreasing from the region of maximum density to the central plane.
摘要翻译： PCT No.PCT / IT91 / 00095 Sec。 371日期：1993年5月13日 102（e）日期1993年5月13日PCT 1991年11月11日PCT公布。第WO92 / 09101号公报日期：1992年5月29日。一种含有氧沉淀成核中心（或氧沉淀物）并且具有在第一和第二面之间等距离的第一面，第二面和中心平面的硅晶片。成核中心（或氧沉淀物）在第一和第二面之间具有不均匀的分布，成核中心（或氧沉淀物）的最大密度在第一面和中心平面之间的区域中，并且更接近第一面比中央飞机。成核中心（或氧沉淀物）的密度从第一面增加到最大密度的区域，并从最大密度的区域减小到中心平面。

4. 发明申请

US20070224783A1 PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING SILICON 有权
标题翻译：形成低缺陷密度的方法，理想的氧气预处理硅
公开(公告)号：US20070224783A1
公开(公告)日：2007-09-27
申请号：US11753294
申请日：2007-05-24
申请人： Robert Falster , Joseph Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve Markgraf , Paolo Mutti , Seamus McQuaid , Bayard Johnson
发明人： Robert Falster , Joseph Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve Markgraf , Paolo Mutti , Seamus McQuaid , Bayard Johnson
IPC分类号： H01L21/00
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process either comprises exposing the wafer's front and back surfaces to different atmospheres, or thermally annealing two wafers in a face-to-face arrangement.
摘要翻译：本发明涉及一种用于制造硅晶片的方法，其在基本上任意的任何电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含轴对称区域其基本上没有附聚的固有点缺陷。该方法包括将晶片的前表面和后表面暴露于不同的气氛，或者以面对面的布置热退火两个晶片。

5. 发明授权

US07229693B2 Low defect density, ideal oxygen precipitating silicon 有权
标题翻译：低缺陷密度，理想的氧沉淀硅
公开(公告)号：US07229693B2
公开(公告)日：2007-06-12
申请号：US11058996
申请日：2005-02-16
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： B32B9/04
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.
摘要翻译：本发明涉及一种硅晶片，其在基本上任何任意的电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含基本上为空的轴对称区域的团聚内在点缺陷。

6. 发明申请

US20050170610A1 Low defect density, ideal oxygen precipitating silicon 有权
标题翻译：低缺陷密度，理想的氧沉淀硅
公开(公告)号：US20050170610A1
公开(公告)日：2005-08-04
申请号：US11058996
申请日：2005-02-16
申请人： Robert Falster , Joseph Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve Markgraf , Paolo Mutti , Seamus McQuaid , Bayard Johnson
发明人： Robert Falster , Joseph Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve Markgraf , Paolo Mutti , Seamus McQuaid , Bayard Johnson
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/00 , C30B33/02 , H01L21/322 , H01L21/48 , H01L21/46
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.
摘要翻译：本发明涉及一种硅晶片，其在基本上任何任意的电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含基本上为空的轴对称区域的团聚内在点缺陷。

7. 发明授权

US06896728B2 Process for producing low defect density, ideal oxygen precipitating silicon 有权
标题翻译：生产低缺陷密度的工艺，理想的氧沉淀硅
公开(公告)号：US06896728B2
公开(公告)日：2005-05-24
申请号：US10373899
申请日：2003-02-25
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/00 , C30B33/02 , H01L21/322 , C30B15/04 , C30B25/16
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process including growing a single crystal silicon ingot from molten silicon, and as part of the growth process, controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and (iii) a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. A silicon wafer is then sliced from the ingot, subjected to a heat-treatment to form crystal lattice vacancies in the front surface and bulk layers of the wafer and cooled at a rate sufficient to cause a non-uniform vacancy concentration profile in the wafer such that a thermal treatment at a temperature in excess of 750° C., is capable of forming in the wafer a denuded zone in the front surface layer and oxygen clusters or precipitates in the bulk zone with the concentration of the oxygen clusters or precipitates in the bulk layer being primarily dependant upon the concentration of vacancies.
摘要翻译：本发明涉及一种用于制造硅晶片的方法，其在基本上任意的任何电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含轴对称区域其基本上没有附聚的固有点缺陷。该方法包括从熔融硅生长单晶硅锭，并且作为生长过程的一部分，控制（i）恒定直径部分生长期间的生长速度v，（ii）平均轴向温度梯度G0 的晶体在从凝固到不低于约1325℃的温度的温度范围内，和（iii）晶体从固化温度至约1050℃的冷却速率，以便形成基本上没有凝聚的固有点缺陷的轴对称段。然后将硅晶片从锭切片，进行热处理以在晶片的前表面和本体层中形成晶格空位，并以足以在晶片中引起不均匀的空位浓度分布的速率冷却，如在超过750℃的温度下的热处理能够在晶片中形成前表面层中的剥离区域，并且在本体区域中的氧簇或沉淀物中的氧簇或沉淀物的浓度在主体层主要取决于空位的浓度。

8. 发明授权

US06849119B2 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor 有权
标题翻译：理想的氧气沉淀硅晶片和氧气外扩散工艺
公开(公告)号：US06849119B2
公开(公告)日：2005-02-01
申请号：US10430798
申请日：2003-05-06
申请人： Robert J. Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
发明人： Robert J. Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
IPC分类号： C30B29/06 , H01L21/26 , H01L21/322 , C30B1/02
CPC分类号： H01L21/3225 , Y10S257/913 , Y10T428/21 , Y10T428/249969
摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.
摘要翻译：一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。该晶片具有前表面，后表面和在前表面和后表面之间的中心平面。在该过程中，对晶片进行热处理以形成晶格空位，空位形成在大部分硅中。然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到前表面的速率冷却，以产生具有空位浓度分布的晶片，其中峰密度在或者靠近中心平面，其浓度通常在晶片前表面的方向上减小。

9. 发明授权

US06306733B1 Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor 有权
标题翻译：理想的氧气沉淀外延硅晶片和氧气外扩散工艺
公开(公告)号：US06306733B1
公开(公告)日：2001-10-23
申请号：US09626635
申请日：2000-07-27
申请人： Robert Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
发明人： Robert Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
IPC分类号： H01L21322
CPC分类号： H01L21/3225 , Y10S257/913 , Y10T428/21 , Y10T428/249969
摘要： A process for preparing an silicon epitaxial wafer. The wafer has a front surface having an epitaxial layer deposited thereon, a back surface, and a bulk region between the front and back surfaces, wherein the bulk region contains a concentration of oxygen precipitates. In the process, a wafer having interstitial oxygen atoms is first subjected to an oxygen precipitation heat treatment to cause the nucleation and growth of oxygen precipitates to a size sufficient to stabilize the oxygen precipitates. An epitaxial layer is then deposited on the surface of the oxygen precipitate stabilized wafer.
摘要翻译：一种制备硅外延晶片的方法。晶片具有在其上沉积有外延层的前表面，后表面和前表面和后表面之间的主体区域，其中主体区域含有氧沉淀物的浓度。在此过程中，首先对具有间隙氧原子的晶片进行氧沉淀热处理，使氧析出物的成核和生长达到足以稳定氧析出物的尺寸。然后在氧沉淀稳定晶片的表面上沉积外延层。

10. 发明授权

US06586068B1 Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof 有权
标题翻译：具有不对称空位浓度分布的理想氧沉淀硅晶片及其制备方法
公开(公告)号：US06586068B1
公开(公告)日：2003-07-01
申请号：US09704893
申请日：2000-11-02
申请人： Robert Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
发明人： Robert Falster , Marco Cornara , Daniela Gambaro , Massimiliano Olmo
IPC分类号： C03B3306
CPC分类号： H01L21/3225 , Y10S257/913 , Y10T428/21 , Y10T428/249969
摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies in the wafer. During the heat-treatment, the front and back surfaces of the wafer are each exposed to either a nitriding or non-nitriding gas. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile determined in part by the gas that each surface is exposed to and in part by the cooling rate.
摘要翻译：一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。该晶片具有前表面，后表面和在前表面和后表面之间的中心平面。在该过程中，对晶片进行热处理以在晶片中形成晶格空位。在热处理期间，晶片的前表面和后表面均暴露于氮化或非氮化气体中。然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到前表面的速率冷却，以产生具有部分由气体确定的空位浓度分布的晶片，每个表面暴露于部分冷却速率。

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