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1. 发明授权

US06692619B1 Sputtering target and method for making composite soft magnetic films 失效
标题翻译：复合软磁膜的溅射靶和方法
公开(公告)号：US06692619B1
公开(公告)日：2004-02-17
申请号：US10067833
申请日：2002-02-08
申请人： Qixu Chen , Fernando Anaya Chavez , Charles Frederick Brucker , Rajiv Yadav Ranjan
发明人： Qixu Chen , Fernando Anaya Chavez , Charles Frederick Brucker , Rajiv Yadav Ranjan
IPC分类号： C23C1434
CPC分类号： H01J37/3429 , C23C14/14 , C23C14/3407 , G11B5/8404 , H01J37/3405
摘要： A high-saturation magnetization composite soft magnetic film can be deposited by magnetron co-sputtering of two or more kinds of materials using targets which have a lower saturation magnetization than that of a single target, which otherwise will be used to produce the resulting composite soft magnetic film. The composite film has a substantially uniform composition and thickness.
摘要翻译：可以通过使用具有比单个靶的饱和磁化强度更低的目标的两种或更多种材料的磁控管共溅射来沉积高饱和磁化复合软磁膜，否则将用于产生所得到的复合软磁性膜。复合膜具有基本均匀的组成和厚度。

2. 发明授权

US06641936B1 Magnetic media with high Cr content, non-magnetic CoCrPt intermediate layers 失效
标题翻译：具有高Cr含量的磁性介质，非磁性CoCrPt中间层
公开(公告)号：US06641936B1
公开(公告)日：2003-11-04
申请号：US10020847
申请日：2001-12-18
申请人： Qixu Chen , Shanghsien Rou , Samuel D. Harkness, IV , Rajiv Yadav Ranjan
发明人： Qixu Chen , Shanghsien Rou , Samuel D. Harkness, IV , Rajiv Yadav Ranjan
IPC分类号： G11B566
CPC分类号： G11B5/732 , G11B5/656 , G11B5/7325 , G11B5/851 , Y10S428/90 , Y10T428/12465 , Y10T428/12854 , Y10T428/265
摘要： A magnetic recording medium comprises, in overlying sequence from a surface of a non-magnetic substrate: at least one Cr-containing or B2-structured underlayer; a substantially non-magnetic CoCrPt alloy intermediate layer; and at least one CoCrPtB ferromagnetic alloy recording layer; wherein the intermediate layer of substantially non-magnetic CoCrPt alloy has a composition which facilitates Co (11.0) or (10.0) crystallographic orientation of the at least one CoCrPtB ferromagnetic alloy recording layer.
摘要翻译：磁记录介质以非磁性基板的表面叠层：至少一个含Cr或B2结构的底层;基本上非磁性的CoCrPt合金中间层; 和至少一个CoCrPtB铁磁合金记录层;其中基本上非磁性的CoCrPt合金的中间层具有促进至少一种CoCrPtB铁磁性合金记录层的Co（11.0）或（10.0）晶体取向的组成。

3. 发明授权

US06482301B1 Target shields for improved magnetic properties of a recording medium 有权
标题翻译：用于提高记录介质的磁性能的目标屏蔽
公开(公告)号：US06482301B1
公开(公告)日：2002-11-19
申请号：US09326245
申请日：1999-06-04
申请人： Qixu Chen , Charles Leu , Mark Anthony Shows , Paul Stephen McLeod , Rajiv Yadav Ranjan
发明人： Qixu Chen , Charles Leu , Mark Anthony Shows , Paul Stephen McLeod , Rajiv Yadav Ranjan
IPC分类号： C23C1432
CPC分类号： G11B5/851 , C23C14/34 , H01J37/34 , H01J37/3447
摘要： A collimator system is disclosed for use in an in-line pass-by sputtering system during the fabrication of recording media to improve the data storage density and read/write performance characteristics of the media. The collimator system includes a collimator shield and a collimator honeycomb. The shield includes a rectangular tube having a flange and a frame at inner and outer ends, respectively. The various components of the shield in part serve to prevent possible contamination of substrates due to target atom accumulation on the chamber walls during the sputtering process. The collimator honeycomb is provided for blocking target atoms from contacting the substrate at low incident angles. The collimator honeycomb is comprised of a plurality of collimators which are identical to each other. In a preferred embodiment, the collimators have a hexagonal cross-section taken from a perspective perpendicular to the substrate. The collimators may also have other geometric shapes. It is also contemplated that more than one collimator honeycomb level be used in alternative embodiments.
摘要翻译：在制造记录介质期间公开了一种用于在线传递溅射系统的准直器系统，以改善数据存储密度和读/写性能特性。准直仪系统包括准直器屏蔽和准直器蜂窝。护罩包括分别在内端和外端具有凸缘和框架的矩形管。屏蔽件的各种部件部分地用于防止在溅射过程期间由于靶室原子在室壁上的积聚而引起的基板的可能污染。提供准直器蜂窝用于阻止目标原子以低入射角接触基板。准直器蜂窝体由多个彼此相同的准直器构成。在优选实施例中，准直器具有垂直于衬底的透视图的六边形截面。准直器也可以具有其他几何形状。还可以想到，在替代实施例中可以使用多于一个准直器蜂窝等级。

4. 发明授权

US06348276B1 Magnetic recording media with a surface-oxidized nial sub-seedlayer 失效
标题翻译：具有表面氧化的Nial子种子层的磁记录介质
公开(公告)号：US06348276B1
公开(公告)日：2002-02-19
申请号：US09382581
申请日：1999-08-25
申请人： Qixu Chen , Zhong Wu , Samuel Dacke Harkness, IV , Charles Leu , Rajiv Yadav Ranjan
发明人： Qixu Chen , Zhong Wu , Samuel Dacke Harkness, IV , Charles Leu , Rajiv Yadav Ranjan
IPC分类号： G11B566
CPC分类号： G11B5/732 , C23C14/025 , G11B5/66 , G11B5/7325 , G11B5/8404
摘要： Magnetic recording media with high coercivity and low noise, suitable for high density longitudinal recording, are formed with a surface oxidized sub-seedlayer between a non-magnetic substrate and seedlayer. Embodiments include depositing a NiAl sub-seedlayer on a glass or glass-ceramic substrate, oxidizing the surface of the NiAl sub-seedlayer, and then sequentially depositing a NiAl seedlayer, Cr or Cr alloy underlayer, e.g., CrMo, an optional intermediate CoCrTa alloy layer, a magnetic layer, e.g., a Co-alloy magnetic layer, and a protective overcoat, e.g., a carbon-containing protective overcoat.
摘要翻译：在非磁性基材和籽晶层之间形成表面氧化亚子层，适用于高密度纵向记录的具有高矫顽力和低噪声的磁记录介质。实施例包括在玻璃或玻璃陶瓷基片上沉积NiAl亚子层，氧化NiAl亚子层的表面，然后依次沉积NiAl种子层，Cr或Cr合金底层，例如CrMo，任选的中间CoCrTa合金层，磁性层，例如Co合金磁性层和保护性外涂层，例如含碳保护性外涂层。

5. 发明授权

US06242086B1 High coercivity, low noise magnetic recording medium comprising an intermediate cocrtaox layer 失效
标题翻译：高矫顽力，低噪声磁记录介质，包括中间共沉淀层
公开(公告)号：US06242086B1
公开(公告)日：2001-06-05
申请号：US09188682
申请日：1998-11-10
申请人： Xing Song , Qixu Chen , Charles Leu , Rajiv Yadav Ranjan
发明人： Xing Song , Qixu Chen , Charles Leu , Rajiv Yadav Ranjan
IPC分类号： G11B5738
CPC分类号： G11B5/66 , G11B5/851 , Y10S428/90 , Y10T428/265
摘要： High areal density magnetic recording media are formed with a thin CoCrTaOx intermediate layer which provides appropriate crystalline orientation and surface morphology for the nucleation and growth of a magnetic layer thereon having increased coercivity and high squareness, while avoiding high substrate heating temperatures. Embodiments include sputter depositing an intermediate layer comprising Co, about 10 to about 20 atomic % Cr and about 1 to about 6 atomic % Ta, at a thickness of about 1.5 to about 18 Å on a Cr or Cr alloy underlayer, allowing partial oxidation of the surface of the intermediate layer by residual oxygen in the sputtering system, and then sputter depositing a CoCrPtTa magnetic alloy layer thereon.
摘要翻译：高密度磁记录介质用薄的CoCrTaOx中间层形成，其提供适当的结晶取向和表面形态，用于其上具有增强矫顽力和高矩形度的磁性层的成核和生长，同时避免高的基板加热温度。实施方案包括在Cr或Cr合金底层上以约1.5至约18的厚度溅射沉积包含Co，约10至约20原子％Cr和约1至约6原子％Ta的中间层，允许部分氧化中间层的表面通过溅射系统中的残余氧，然后在其上溅射沉积CoCrPtTa磁性合金层。

6. 发明授权

US06572958B1 Magnetic recording media comprising a silicon carbide corrosion barrier layer and a c-overcoat 失效
标题翻译：磁记录介质包括碳化硅腐蚀阻挡层和c覆盖层
公开(公告)号：US06572958B1
公开(公告)日：2003-06-03
申请号：US09621530
申请日：2000-07-21
申请人： Kueir-Weei Chour , Liji Huang , Jie-Ming Yu , Kuo-Hsing Hwang , Chung Shih , Lin Huang , Charles Leu , Qixu Chen , Rajiv Yadav Ranjan
发明人： Kueir-Weei Chour , Liji Huang , Jie-Ming Yu , Kuo-Hsing Hwang , Chung Shih , Lin Huang , Charles Leu , Qixu Chen , Rajiv Yadav Ranjan
IPC分类号： G11B572
CPC分类号： G11B5/8408 , G11B5/72 , Y10T428/2495 , Y10T428/265
摘要： A magnetic recording medium is provided with a dual layer protective overcoat system comprising a SiC corrosion barrier layer and a carbon-containing protective overcoat thereon. The SiC layer effectively prevents or significantly reduces Co and Ni diffusion to the medium surface. Embodiments include magnetic recording media comprising a SiC corrosion barrier layer over a magnetic layer, an overlying protective layer of amorphous hydrogenated carbon, amorphous nitrogenated carbon or amorphous hydrogen-nitrogenated carbon, and a lubricant topcoat thereon. Embodiments of the present invention further include magnetic recording media comprising Ni—P plated aluminum, Ni-plated glass or non-conductive substrates including glass, glass-ceramic and ceramic materials. Embodiments of the present invention further include a dual protective overcoat system having a combined thickness less than about 100 Å, such as less than about 75 Å, e.g., less than about 50 Å, with the SiC corrosion barrier layer having a thickness ranging from 1 Å to 40 Å.
摘要翻译：磁记录介质设置有双层保护外涂层系统，其包括SiC腐蚀阻挡层和其上的含碳保护外涂层。 SiC层有效地防止或显着减少Co和Ni扩散到介质表面。实施例包括在磁性层上包含SiC腐蚀阻挡层的磁记录介质，无定形氢化碳的上覆保护层，无定形氮化碳或无定形氢化氮，以及其上的润滑剂面涂层。本发明的实施例还包括包含Ni-P镀铝，镀Ni玻璃或包括玻璃，玻璃 - 陶瓷和陶瓷材料的非导电衬底的磁记录介质。本发明的实施方案还包括双重保护外涂层系统，其具有小于约，例如小于约，例如小于约50埃的组合厚度，其中SiC腐蚀阻挡层的厚度范围为1 Å至40Å。

7. 发明授权

US6146754A Substantially isotropic magnetic recording medium comprising a seedlayer 有权
标题翻译：包括种子层的基本上各向同性的磁记录介质
公开(公告)号：US6146754A
公开(公告)日：2000-11-14
申请号：US145762
申请日：1998-09-02
申请人： Xing Song , Qixu Chen , Charles Leu , Rajiv Yadav Ranjan
发明人： Xing Song , Qixu Chen , Charles Leu , Rajiv Yadav Ranjan
IPC分类号： G11B5/73 , G11B5/84 , G11B5/66
CPC分类号： G11B5/732 , G11B5/8404 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A high areal density magnetic recording medium exhibiting high Hc, high SNR, high S* and substantially isotropic magnetic properties is achieved by depositing a thin seedlayer before depositing the underlayer. Embodiments include heating the seedlayer under vacuum in the presence of residual oxygen to induce appropriate crystalline orientation and surface morphology for nucleation and growth of the underlayer and magnetic layer having substantially isotropic magnetic properties.
摘要翻译：通过在沉积底层之前沉积薄的种子层，实现了表现出高Hc，高SNR，高S *和基本上各向同性磁性的高密度磁记录介质。实施方案包括在存在残余氧的情况下在真空下加热种子层，以诱导适当的晶体取向和表面形态，用于具有基本上各向同性磁性的底层和磁性层的成核和生长。

8. 发明授权

US07323259B2 Multilayer perpendicular media with high-boron or high-carbon additives to CoCr films 有权
标题翻译：多层垂直介质与高硼或高碳添加剂CoCr膜
公开(公告)号：US07323259B2
公开(公告)日：2008-01-29
申请号：US10402772
申请日：2003-03-28
申请人： Qixu Chen , Charles Brucker , Rajiv Yadav Ranjan
发明人： Qixu Chen , Charles Brucker , Rajiv Yadav Ranjan
IPC分类号： G11B5/66 , G11B5/70
CPC分类号： G11B5/667 , G11B5/656 , G11B5/66 , G11B5/7325 , Y10T428/265
摘要： Carbon or boron is added into the CoCr layers of a multiplayer perpendicular magnetic media structure to reduce media noise. The perpendicular magnetic media structure has sharp interfaces between Co-alloy layers and Pd or Pt layers and significantly reduced exchange coupling. In accordance with one embodiment of the invention, the perpendicular magnetic media structure with carbon or boron additives is 700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/158 Å FeCo30.8B12/17 Å Ta/49 Å ITO/33 Å CoCr37Ru10/2.5 Å COy/2.5 Å C/[(CoCr9)C6.8/Pd]19/50 Å CHN. [(CoCr9)C6.8/Pd]19 means 19 layers of the bi-layer stack (CoCr9)C6.8/Pd. TaOx stands for surface-oxidized Ta and COy stands for C oxides. ITO stands for Indium Tin Oxide and consists of In2O3 and Sn2O5 at 80 and 20 molecular percent respectively. CHN refers to hydrogenated and nitrogenated carbon.
摘要翻译：将碳或硼添加到多玩家垂直磁性介质结构的CoCr层中以降低介质噪声。垂直磁介质结构在Co合金层和Pd或Pt层之间具有明显的界面，并显着降低了交换耦合。根据本发明的一个实施方案，具有碳或硼添加剂的垂直磁性介质结构是700埃，30.8×12/20埃， 30/100FeCo 30.8 B 12/20Åx xÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅB B B B B B B B B B B B > 12/20ÅTaO x / 158ÅFeCo 30.8 B 12/17Å/ 49ITO / 33Å CoCr / / / / / / / /（（C）Cr C > 6.8 / Pd] 19/50埃。 [（CoCr 9）C 6.8 / Pd] 19表示19层双层堆叠（CoCr 9 / / SUB >）C 6.8 / Pd。 TaO x代表表面氧化的Ta，CO 2代表C氧化物。 ITO代表氧化铟锡，由80和20组成的In 2 N 2 O 3和Sn 2 O 5 O 5组成。分子百分比。 CHN是指氢化和氮化的碳。

9. 发明授权

US08598576B2 Magnetic random access memory with field compensating layer and multi-level cell 有权
标题翻译：具有场补偿层和多级单元的磁随机存取存储器
公开(公告)号：US08598576B2
公开(公告)日：2013-12-03
申请号：US13029054
申请日：2011-02-16
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L29/66984 , B82Y40/00 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括在基板上形成的具有固定的垂直磁性部件的参考层。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

10. 发明授权

US08574928B2 MRAM fabrication method with sidewall cleaning 有权
标题翻译： MRAM制造方法与侧壁清洁
公开(公告)号：US08574928B2
公开(公告)日：2013-11-05
申请号：US13443818
申请日：2012-04-10
申请人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , H01L43/12
摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.
摘要翻译：描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。本发明的各种实施方案包括增强或优化方法的方法。如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

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