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1. 发明申请

US20190148622A9 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：US20190148622A9
公开(公告)日：2019-05-16
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H01L43/02
摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

2. 发明授权

US09019758B2 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers 有权
标题翻译：具有垂直磁各向异性多层的自旋转矩磁性随机存取存储器
公开(公告)号：US09019758B2
公开(公告)日：2015-04-28
申请号：US13225338
申请日：2011-09-02
申请人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
发明人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
IPC分类号： G11C11/15 , G11C11/16 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.
摘要翻译：自旋传递转矩磁随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层。复合自由层和固定层中的每一个的磁化方向基本上垂直于衬底的平面。复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调节在使磁化具有与膜平面垂直的优选方向的范围内的磁性层组成。

3. 发明授权

US08565010B2 Magnetic random access memory with field compensating layer and multi-level cell 有权
标题翻译：具有场补偿层和多级单元的磁随机存取存储器
公开(公告)号：US08565010B2
公开(公告)日：2013-10-22
申请号：US13099321
申请日：2011-05-02
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , H01L43/02
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

4. 发明授权

US08492860B2 Magnetic random access memory with switching assist layer 有权
标题翻译：具有开关辅助层的磁性随机存取存储器
公开(公告)号：US08492860B2
公开(公告)日：2013-07-23
申请号：US13289372
申请日：2011-11-04
申请人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10
摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化反平行耦合。在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且第一自由层开关的磁化方向。当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

5. 发明申请

US20120087185A1 MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM) 有权
标题翻译：磁性锁定磁条随机存取存储器（MRAM）
公开(公告)号：US20120087185A1
公开(公告)日：2012-04-12
申请号：US13035857
申请日：2011-02-25
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
摘要翻译：自旋转移磁力随机存取存储器（STTMRAM）元件被配置为存储当电流被施加到其上时的状态。 STTMRAM元件包括第一和第二自由层，每个自由层具有定义STTMRAM元件的状态的相关联的磁化方向。在向STTMRAM元件施加电流之前，第一和第二自由层的磁化方向各自在平面内，并且在向STTMRAM元件施加电流之后，第二自由层的磁化方向变得基本上标题为平面外和第一自由层开关的磁化方向。在断电的情况下，第二自由层的磁化方向保持在与第一自由层基本相反的方向。

6. 发明授权

US08598576B2 Magnetic random access memory with field compensating layer and multi-level cell 有权
标题翻译：具有场补偿层和多级单元的磁随机存取存储器
公开(公告)号：US08598576B2
公开(公告)日：2013-12-03
申请号：US13029054
申请日：2011-02-16
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L29/66984 , B82Y40/00 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括在基板上形成的具有固定的垂直磁性部件的参考层。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

7. 发明授权

US08574928B2 MRAM fabrication method with sidewall cleaning 有权
标题翻译： MRAM制造方法与侧壁清洁
公开(公告)号：US08574928B2
公开(公告)日：2013-11-05
申请号：US13443818
申请日：2012-04-10
申请人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , H01L43/12
摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.
摘要翻译：描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。本发明的各种实施方案包括增强或优化方法的方法。如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

8. 发明授权

US08885395B2 Magnetoresistive logic cell and method of use 有权
标题翻译：磁阻逻辑单元及其使用方法
公开(公告)号：US08885395B2
公开(公告)日：2014-11-11
申请号：US13402123
申请日：2012-02-22
申请人： Yuchen Zhou , Zihui Wang , Yiming Huai , Rajiv Yadav Ranjan , Roger K. Malmhall
发明人： Yuchen Zhou , Zihui Wang , Yiming Huai , Rajiv Yadav Ranjan , Roger K. Malmhall
IPC分类号： G11C11/00
CPC分类号： G11C11/00 , G11C11/161 , G11C11/1673 , H01L27/222 , H01L43/08
摘要： A magnetoresistive logic cell (MRLC) is described that includes two MTJs in series that share a common free layer (CFL). The relative magnetization orientations of the CFL and the switchable reference layer (SRL) in MTJ-1 dominate the overall resistance of the MRLC without regard to the fixed magnetization orientation of the nonswitchable reference layer in MTJ-2. The high resistance state of the MRLC occurs when the switchable reference and common free layers have opposite magnetization orientations. The low resistance state occurs when the orientations are the same. This behavior allows the MRLC to be used as a logical comparator. The CFL is switched by STT effect by application of selected relatively short voltage pulses that do not switch the SRL. The SRL is switched with reference to the CFL by a voltage effect generated by a selected longer voltage pulse that does not switch the CFL.
摘要翻译：描述了包含共享共同自由层（CFL）的两个串联MTJ的磁阻逻辑单元（MRLC）。 MTJ-1中CFL和可切换参考层（SRL）的相对磁化取向主导了MRLC的总体电阻，而不考虑MTJ-2中不可切换参考层的固定磁化方向。当可切换参考和公共自由层具有相反的磁化方向时，MRLC的高电阻状态发生。当取向相同时，发生低电阻状态。此行为允许将MRLC用作逻辑比较器。通过施加不切换SRL的选定的相对较短的电压脉冲，通过STT效应来切换CFL。通过由不会切换CFL的选定的较长电压脉冲产生的电压效应，SRL将根据CFL进行切换。

9. 发明申请

US20130119498A1 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：具有热稳定性的磁铁隧道结（MEM）的存储系统及其制造方法
公开(公告)号：US20130119498A1
公开(公告)日：2013-05-16
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
摘要翻译：用于存储基于自由层的磁取向的状态的自旋转矩传递磁随机存取存储器（STTMRAM）元件，STTMRAM元件由包括第一垂直增强层（PEL）的第一垂直自由层（PFL））。第一个PFL形成在种子层的顶部。 STTMRAM元件还包括形成在第一PFL的顶部上的阻挡层和具有第二PEL的第二垂直参考层（PRL），第二PRL形成在阻挡层的顶部上。 STTMRAM元件还包括形成在第二PRL的顶部上的封盖层。

10. 发明申请

US20130001717A1 PERPENDICULAR MRAM WITH MTJ INCLUDING LAMINATED MAGNETIC LAYERS 审中-公开
标题翻译：具有MTJ的全面MRAM，包括层压磁性层
公开(公告)号：US20130001717A1
公开(公告)日：2013-01-03
申请号：US13538863
申请日：2012-06-29
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： H01F10/3236 , H01F10/3286 , H01L43/10
摘要： Thin film perpendicular magnetic multilayer structures which can be used in various thin film magnetic structures are described. One multilayer structure embodiment is formed by interlacing a soft magnetic layer and a FePt based magnetic layer in N repeats, where N is a positive integer. Various MRAM MTJ structures are described using multilayer structure embodiments for a free layer, a reference layer, and a pinned layer according to the invention.
摘要翻译：描述了可用于各种薄膜磁性结构的薄膜垂直磁性多层结构。一个多层结构实施例通过在N个重复中交织软磁层和基于FePt的磁性层来形成，其中N是正整数。使用根据本发明的自由层，参考层和钉扎层的多层结构实施例描述了各种MRAM MTJ结构。

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