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1. 发明申请

US20120097525A1 METHOD AND APPARATUS TO CONTROL IONIC DEPOSITION 审中-公开
标题翻译：控制离子沉积的方法和装置
公开(公告)号：US20120097525A1
公开(公告)日：2012-04-26
申请号：US13093775
申请日：2011-04-25
申请人： Samuel D. HARKNESS, IV , Quang N. Tran
发明人： Samuel D. HARKNESS, IV , Quang N. Tran
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , C23C14/0605 , C23C14/3464 , C23C14/352
摘要： A sputtering source having a bias field generated between the substrate and the sputtering source. A conductive louver or grid arrangement is positioned in front of the substrate, and is biased by an RF or DC source. The substrate itself may or may not be biased, as needed. The conductive louvers are rotatable to also function as shutters or collimator to control the flux of the deposited species. The shutter arrangement is mounted onto the sputtering opening of a facing target source (FTS). The shutter is biased by an RF or DC source and the applied power and rotation position of each slat in the shutter are controlled to achieve the desired flux and collimation.
摘要翻译：一种在衬底和溅射源之间产生偏置场的溅射源。导电百叶窗或格栅布置位于基板的前面，并被RF或DC源偏置。根据需要，衬底本身可以或可以不被偏置。导电百叶窗是可旋转的，也可以用作百叶窗或准直器，以控制沉积物质的通量。快门装置安装在面对目标源（FTS）的溅射开口上。快门由RF或DC源偏置，并且控制快门中每个板条的施加的功率和旋转位置以实现期望的通量和准直。

2. 发明授权

US07521136B1 Coupling enhancement for medium with anti-ferromagnetic coupling 失效
标题翻译：具有反铁磁耦合介质的耦合增强
公开(公告)号：US07521136B1
公开(公告)日：2009-04-21
申请号：US11358128
申请日：2006-02-22
申请人： Stella Wu Zhong , Samuel D. Harkness, IV
发明人： Stella Wu Zhong , Samuel D. Harkness, IV
IPC分类号： G11B5/66
CPC分类号： G11B5/7325 , G11B5/656 , G11B5/66 , Y10T428/12465 , Y10T428/12646 , Y10T428/12861 , Y10T428/12868 , Y10T428/12875 , Y10T428/12931 , Y10T428/12986 , Y10T428/24942 , Y10T428/265 , Y10T428/31
摘要： Laminated magnetic recording medium with two Co-containing layers separated by a non-magnetic Ru-containing interlayer is stabilized by Ru-containing layer between the recording layers and Co-containing stabilization layers through anti-ferromagnetic coupling. The insertion of Co layer beneath Ru spacer has resulted in increased coupling, and further coupling enhancement is achieved by low pressure process of Co and Ru layers.
摘要翻译：通过非磁性含Ru中间层分离的具有两个含Co层的层压磁记录介质通过反铁磁耦合在记录层和含Co稳定层之间的含Ru层保持稳定。 Co层下面的Co层的插入导致耦合增加，并且通过Co和Ru层的低压工艺实现进一步的耦合增强。

3. 发明授权

US07235314B2 Inter layers for perpendicular recording media 有权
标题翻译：用于垂直记录介质的层间
公开(公告)号：US07235314B2
公开(公告)日：2007-06-26
申请号：US10797111
申请日：2004-03-11
申请人： Qixu Chen , Chung-Hee Chang , Li-Lien Lee , Samuel D. Harkness, IV
发明人： Qixu Chen , Chung-Hee Chang , Li-Lien Lee , Samuel D. Harkness, IV
IPC分类号： G11B5/66 , G11B5/70
CPC分类号： G11B5/732 , G11B5/65 , G11B5/667 , G11B5/7325
摘要： A magnetic recording medium, the order of layers in which is the substrate, the soft underlayer, the seedlayer, the 1st RuCrx-containing interlayer, the 2nd RuCrx-containing interlayer and the magnetic recording layer with preferably a oxides or nitrides-containing magnetic layer comprising grains, is disclosed. High-chromium ruthenium-chromium alloy used as inter layers significantly enhances coercivity and SMNR preferably due to the improved lattice match between RuCr inter layers and CoPt-based magnetic recording layers, and the surface energy of RuCr layers contributes to the performance improvement with the high-chromium addition into Ru inter layers.
摘要翻译：磁记录介质，层的顺序为衬底，软底层，种子层，含有CrCrNi x的中间层，2层，并且具有优选含有包含晶粒的含氧化物或含氮化物的磁性层的磁记录层被公开。用作层间的高铬钌 - 铬合金显着提高了矫顽力和SMNR，这主要是由于RuCr层间和CoPt基磁记录层之间的晶格匹配得到改善，RuCr层的表面能有助于提高性能 - 铬添加到Ru层间。

4. 发明申请

US20120152726A1 METHOD AND APPARATUS TO PRODUCE HIGH DENSITY OVERCOATS 审中-公开
标题翻译：生产高密度过氧化物的方法和装置
公开(公告)号：US20120152726A1
公开(公告)日：2012-06-21
申请号：US13094779
申请日：2011-04-26
申请人： Samuel D. HARKNESS IV , Terry Bluck , Michael A. Russak , Quang N. Tran
发明人： Samuel D. HARKNESS IV , Terry Bluck , Michael A. Russak , Quang N. Tran
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , H01J37/3405 , H01J37/3417 , H01J37/345
摘要： A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.
摘要翻译：提供了一种沉积系统，其中具有相似组成的导电靶位于彼此相对的位置。该系统与衬底平行排列，衬底位于所得到的等离子体的外部，其主要被限制在两个阴极之间。形成“等离子体笼”，其中碳原子与加速电子碰撞并被高度电离。电子被捕获在等离子体笼内，而电离的碳原子沉积在衬底的表面上。由于电子被限制在等离子体笼中，所以不会发生衬底损坏或加热。另外，用于点燃和维持等离子体并从靶上溅射碳原子的氩原子不会到达衬底，以避免损坏衬底。

5. 发明授权

US07968792B2 Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same 有权
标题翻译：量子点敏化宽带隙半导体光电器件及其制造方法
公开(公告)号：US07968792B2
公开(公告)日：2011-06-28
申请号：US11713652
申请日：2007-03-05
申请人： Samuel D. Harkness, IV , Hans J. Richter
发明人： Samuel D. Harkness, IV , Hans J. Richter
IPC分类号： H01L31/0328 , H01L31/0352
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译：宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。活性PV层包括具有Eg≥2.0eV的宽带隙（WBG）半导体材料，其形式为限定至少两个开放空间的2维矩阵，以及具有Eg <2.0eV的较窄带隙半导体材料，形式为的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。活性PV层的％。

6. 发明授权

US08975513B2 Quantum dot-sensitized wide bandgap semiconductor heterojunction photovoltaic devices 有权
标题翻译：量子点敏化宽带隙半导体异质结光伏器件
公开(公告)号：US08975513B2
公开(公告)日：2015-03-10
申请号：US13171356
申请日：2011-06-28
申请人： Samuel D. Harkness, IV , Hans J. Richter
发明人： Samuel D. Harkness, IV , Hans J. Richter
IPC分类号： H01L31/032 , H01L31/0352 , H01L31/06
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译：宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。活性PV层包括具有Eg≥2.0eV的宽带隙（WBG）半导体材料，其形式为限定至少两个开放空间的2维矩阵，以及具有Eg <2.0eV的较窄带隙半导体材料，形式为的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。活性PV层的％。

7. 发明授权

US08673466B2 CoPtCr-based bit patterned magnetic media 有权
标题翻译：基于CoPtCr的位图形磁介质
公开(公告)号：US08673466B2
公开(公告)日：2014-03-18
申请号：US11525958
申请日：2006-09-25
申请人： Dieter K. Weller , Hans J. Richter , Samuel D. Harkness, IV , Erol Girt
发明人： Dieter K. Weller , Hans J. Richter , Samuel D. Harkness, IV , Erol Girt
IPC分类号： G11B5/66
CPC分类号： G11B5/656 , G11B5/667 , G11B5/732 , G11B5/855
摘要： A bit patterned magnetic recording medium comprises a substrate having a surface, and a plurality of spaced apart magnetic elements on the surface, each element constituting a discrete magnetic domain or bit of the same structure and comprised of a stack of thin film layers including in order from the substrate surface: a seed layer; and a perpendicular magnetic recording layer in contact with a surface of the seed layer and comprising a Co 1-x-yPtxCry alloy material, where 0.05≦x≦0.35 and 0≦y≦0.15. The Co1-x-yPtxCry alloy material has a first order magnetic anisotropy constant K1 up to about 2×107 erg/cm3, a saturation magnetization Ms up to about 1200 emu/cm3, an anisotropy field HK=2K1/Ms up to about 35 kOe, a hexagonal (0001) crystal structure with c-axis perpendicular to a surface thereof, and an X-Ray diffraction (XRD) rocking curve with a full width at half maximum (FWHM) of ˜5° or less.
摘要翻译：位图形磁记录介质包括具有表面的基板和表面上的多个间隔开的磁性元件，每个元件构成相同结构的离散磁畴或位，并且包括一层薄层，从基底表面：种子层; 以及与种子层的表面接触并包括Co 1-x-yPt x Cry合金材料的垂直磁记录层，其中0.05≤x≤0.35和0≤y≤0.15。 Co1-x-yPtxCry合金材料具有高达约2×107erg / cm3的一阶磁各向异性常数K1，高达约1200emu / cm3的饱和磁化强度Ms，高达约35的各向异性磁场HK = 2K1 / Ms kOe，具有垂直于其表面的c轴的六边形（0001）晶体结构，以及具有约5°或更小的全半宽度（FWHM）的X射线衍射（XRD）摇摆曲线。

8. 发明授权

US08119263B2 Tuning exchange coupling in magnetic recording media 有权
标题翻译：调谐磁记录介质中的交换耦合
公开(公告)号：US08119263B2
公开(公告)日：2012-02-21
申请号：US11231796
申请日：2005-09-22
申请人： Thomas Patrick Nolan , Samuel D. Harkness, IV
发明人： Thomas Patrick Nolan , Samuel D. Harkness, IV
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11B5/65 , G11B5/851
摘要： A magnetic recording medium having a substrate, a first magnetic layer and a second magnetic layer, in this order, wherein an exchange coupling in the first magnetic layer is lower than an exchange coupling in the second magnetic layer, and the first and second magnetic layers are in a film stack so that magnetic grains in the first magnetic layer are exchange coupled by a pathway through the second magnetic layer is disclosed. A method of manufacturing a magnetic recording medium by obtaining a substrate, depositing a first magnetic layer at a first sputter gas pressure and depositing a second magnetic layer at a second sputter gas pressure, in this order, wherein the first sputter gas pressure is higher than the second sputter gas pressure, and an exchange coupling in the first magnetic layer is lower than an exchange coupling in the second magnetic layer is also disclosed.
摘要翻译：一种具有基板，第一磁性层和第二磁性层的磁记录介质，其中第一磁性层中的交换耦合低于第二磁性层中的交换耦合，第一和第二磁性层公开了通过第二磁性层的路径将第一磁性层中的磁性颗粒交换耦合的薄膜叠层。一种通过获得衬底制造磁记录介质的方法，以第一溅射气体压力沉积第一磁性层并以第二溅射气体压力沉积第二磁性层，其中第一溅射气体压力高于第二溅射气体压力和第一磁性层中的交换耦合也低于第二磁性层中的交换耦合。

9. 发明授权

US06936353B1 Tilted recording medium design with (101-2) orientation 失效
标题翻译：（101-2）方向的倾斜记录介质设计
公开(公告)号：US06936353B1
公开(公告)日：2005-08-30
申请号：US10611308
申请日：2003-07-02
申请人： Zhong Stella Wu , Qixu David Chen , Samuel D. Harkness, IV
发明人： Zhong Stella Wu , Qixu David Chen , Samuel D. Harkness, IV
IPC分类号： G11B5/64 , G11B5/66
CPC分类号： G11B5/64 , G11B5/012 , G11B5/1278 , G11B5/656 , G11B5/667 , G11B5/82 , Y10T428/12465 , Y10T428/12868 , Y10T428/12875 , Y10T428/12986 , Y10T428/24942
摘要： Magnetic recording media having a magnetic layer with an easy magnetization axis lying about 45° out of plane of the magnetic layer is disclosed. SMNR from this media could be greatly improved from conventional longitudinal and perpendicular recording, because of an increase in the grain anisotropy that could be effectively written due to the angled recording configuration, resulting also in higher thermal stability, therefore, suitable for higher areal density recording.
摘要翻译：公开了具有磁性层的磁记录介质，其易磁化轴位于磁性层的平面外约45°。由于由于成角度的记录结构而可以有效地写入的晶粒各向异性的增加，所以来自该介质的SMNR可以从传统的纵向和垂直记录中大大改进，从而导致较高的热稳定性，因此适用于较高的面密度记录。

10. 发明授权

US06908689B1 Ruthenium-aluminum underlayer for magnetic recording media 失效
标题翻译：用于磁记录介质的钌铝底层
公开(公告)号：US06908689B1
公开(公告)日：2005-06-21
申请号：US10022728
申请日：2001-12-20
申请人： Qixu Chen , Zhong Wu , Samuel D. Harkness, IV , Rajiv Y. Ranjan
发明人： Qixu Chen , Zhong Wu , Samuel D. Harkness, IV , Rajiv Y. Ranjan
IPC分类号： G11B5/64 , G11B5/73 , G11B5/66
CPC分类号： G11B5/7325 , G11B5/656 , Y10T428/12465 , Y10T428/12743 , Y10T428/1275 , Y10T428/12931 , Y10T428/26 , Y10T428/31
摘要： A magnetic recording medium containing a B-2 structured ruthenium-aluminum underlayer comprising a (200) crystallographic orientation with a thickness from about 50 Å to about 800 Å, and a magnetic layer with a Co(11.0) crystallographic orientation, and a method of making the same are disclosed. The medium deposited on mechanically textured and surface-oxidized NiP film has a relatively high remanent coercivity and a relatively high signal to medium noise ratio even at low OR-Mrt.
摘要翻译：一种含有B层结构的钌 - 铝底层的磁记录介质，其包含厚度为约至约800埃的（200）结晶取向和具有Co（11.0）结晶取向的磁性层，以及一种做出相同的披露。沉积在机械织构和表面氧化的NiP膜上的介质具有相对较高的残余矫顽力和甚至在低OR-Mrt时相对较高的信噪比。

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