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1. 发明授权

US07078817B2 Multiple copper vias for integrated circuit metallization 失效
标题翻译：用于集成电路金属化的多个铜通孔
公开(公告)号：US07078817B2
公开(公告)日：2006-07-18
申请号：US11010596
申请日：2004-12-13
申请人： Paul S. Ho , Ki-Don Lee , Ennis Ogawa , Hideki Matsuhashi
发明人： Paul S. Ho , Ki-Don Lee , Ennis Ogawa , Hideki Matsuhashi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L22/34 , H01L23/522 , H01L23/5226 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： Electromigration can be reduced in a copper-based metallization of an integrated circuit that includes a first copper-containing via that electrically connects an underlying conductive line and an overlying copper-containing line through an intervening insulating layer. Electromigration can be reduced by forming at least a second copper-containing via that electrically connects the underlying conductive line and the overlying copper-containing line through the intervening insulating layer, in parallel with the first copper-containing via. Multi-vias can provide redundancy to reduce early failure statistics. Moreover, since current is distributed among the vias, the electromigration driving force can be reduced and local Joule heating, in voids at the via interface, also may be reduced. Accordingly, even if via voids are formed, the structure may not fail by catastrophic thermal runaway due to Joule heating.
摘要翻译：可以减少集成电路的铜基金属化中的电迁移，该集成电路包括通过中间绝缘层将下面的导电线与覆盖的含铜线电连接的第一含铜通孔。通过形成至少第二含铜通孔，通过与第一含铜通孔平行地电连接下面的导电线路和覆盖的含铜线路穿过中间绝缘层，可以减少电迁移。多通道可以提供冗余以减少早期故障统计。此外，由于电流分布在通孔中，所以可以减少电迁移驱动力，并且可以减少在通孔接口处的空隙中的局部焦耳加热。因此，即使形成通孔，由于焦耳加热，结构也可能不会由于灾难性热失控而失效。

2. 发明授权

US06919639B2 Multiple copper vias for integrated circuit metallization and methods of fabricating same 失效
标题翻译：用于集成电路金属化的多个铜通孔及其制造方法
公开(公告)号：US06919639B2
公开(公告)日：2005-07-19
申请号：US10271284
申请日：2002-10-15
申请人： Paul S. Ho , Ki-Don Lee , Ennis Ogawa , Hideki Matsuhashi
发明人： Paul S. Ho , Ki-Don Lee , Ennis Ogawa , Hideki Matsuhashi
IPC分类号： H01L23/522 , H01L23/532 , H01L23/544 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L22/34 , H01L23/522 , H01L23/5226 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： Electromigration can be reduced in a copper-based metallization of an integrated circuit that includes a first copper-containing via that electrically connects an underlying conductive line and an overlying copper-containing line through an intervening insulating layer. Electromigration can be reduced by forming at least a second copper-containing via that electrically connects the underlying conductive line and the overlying copper-containing line through the intervening insulating layer, in parallel with the first copper-containing via. Multi-vias can provide redundancy to reduce early failure statistics. Moreover, since current is distributed among the vias, the electromigration driving force can be reduced and local Joule heating, in voids at the via interface, also may be reduced. Accordingly, even if via voids are formed, the structure may not fail by catastrophic thermal runaway due to Joule heating.
摘要翻译：可以减少集成电路的铜基金属化中的电迁移，该集成电路包括通过中间绝缘层将下面的导电线与覆盖的含铜线电连接的第一含铜通孔。通过形成至少第二含铜通孔，通过与第一含铜通孔平行地电连接下面的导电线路和覆盖的含铜线路穿过中间绝缘层，可以减少电迁移。多通道可以提供冗余以减少早期故障统计。此外，由于电流分布在通孔中，所以可以减少电迁移驱动力，并且可以减少在通孔接口处的空隙中的局部焦耳加热。因此，即使形成通孔，由于焦耳加热，结构也可能不会由于灾难性热失控而失效。

3. 发明授权

US4886681A Metal-polymer adhesion by low energy bombardment 失效
标题翻译：金属 - 聚合物通过低能量轰击粘附
公开(公告)号：US4886681A
公开(公告)日：1989-12-12
申请号：US281960
申请日：1988-12-06
申请人： Joachim G. Clabes , Peter O. Hahn , Paul S. Ho , Haralambos Lefakis , Gary W. Rubloff
发明人： Joachim G. Clabes , Peter O. Hahn , Paul S. Ho , Haralambos Lefakis , Gary W. Rubloff
IPC分类号： C23C14/02 , C23C14/20 , C23C14/22 , H05K3/38
CPC分类号： C23C14/20 , C23C14/022 , C23C14/22 , H05K3/381 , H05K3/388
摘要： A technique is described for improving metal-organic substrate adhesion and for reducing stress between the metal film and the substrate. Low energy reactive ions, electrons, or photons are incident upon the substrate to alter the surface chemistry of the substrate to a depth of from about 10 angstroms to a few hundred angstroms. The energy of the incident reactive ions and electrons is about 50-2000 eV, while the energy of the incident photons is about 0.2-500 eV. Irradiation of the substrate can occur prior to or during metal deposition. For simultaneous metal deposition/particle irradiation, the arrival rates of the metal atoms and the substrate treatment particles are within a few order of magnitude of one another. Room temperatures or elevated temperatures are suitable.
摘要翻译：描述了一种用于改善金属 - 有机衬底粘附和减少金属膜和衬底之间的应力的技术。低能量反应离子，电子或光子入射到衬底上以将衬底的表面化学性质改变到约10埃至几百埃的深度。入射的反应离子和电子的能量约为50-2000eV，入射光子的能量约为0.2-500eV。衬底的照射可以在金属沉积之前或期间发生。为了同时进行金属沉积/颗粒照射，金属原子和基板处理颗粒的到达速率在彼此的几个数量级内。室温或高温适用。

4. 发明申请

US20120177716A1 Methods for Making Controlled Delivery Devices Having Zero Order Kinetics 有权
标题翻译：制造具有零级动力学的受控输送装置的方法
公开(公告)号：US20120177716A1
公开(公告)日：2012-07-12
申请号：US13383820
申请日：2010-07-14
申请人： Paul S. Ho , Salomon Stavchansky , Phillip Bowman , Zhiquan Luo , Zhuojie Wu , Ashish Rastogi
发明人： Paul S. Ho , Salomon Stavchansky , Phillip Bowman , Zhiquan Luo , Zhuojie Wu , Ashish Rastogi
IPC分类号： A61K9/00 , A61P3/10 , A61P9/00 , A61P25/08 , A61P25/16 , A61P29/00 , A61P35/00 , A61P27/02 , A61P31/10 , A61P9/10 , A61P7/02 , G03F7/20 , B29C35/08 , C25F3/00 , A61K31/573
CPC分类号： A61B5/4839 , A61B5/076 , A61B5/686 , A61B17/06166 , A61B90/30 , A61B2560/0219 , A61F2/0063 , A61F2/06 , A61F2/24 , A61F2/82 , A61F2/91 , A61F2/915 , A61F9/0017 , A61F2220/005 , A61F2230/0013 , A61F2230/0054 , A61F2240/001 , A61F2250/0002 , A61F2250/0068 , A61F2310/00017 , A61F2310/00179 , A61F2310/00329 , A61K31/573 , A61L17/005 , A61L27/54 , A61L29/16 , A61L31/06 , A61L31/16 , A61L2300/43 , A61L2300/602 , A61M25/001 , A61M25/0017 , A61M25/0043 , A61M27/002 , A61M2025/0057
摘要： A method of making an injectable or implantable active agent delivery device capable of delivering a diagnostic, therapeutic, and/or prophylactic agent to a desired targeted site having orifice(s) on the surface is disclosed herein providing unidirectional release of the agent at a controlled desirable rate. The agent may include, but is not limited to, drugs, proteins, peptides, biomarkers, bioanalytes, and/or genetic material. The technology of the invention is based on parallel processing to fabricate micro-holes on tubes employing photo-lithography and reactive ion etching techniques and also incorporates a simple molding method to form the micro-holes on flexible polymer tubes, including bio-degradable tubes. The parallel processing method of the instant invention is fast, economical and well suited for mass production. The developed device, due to its composite structure, has the ability to combine several release mechanisms, leading to zero-order release kinetics for most of the time.
摘要翻译：本文公开了一种制备能够将诊断性，治疗性和/或预防性药物递送至表面上具有孔口的所需目标部位的可注射或可植入的活性剂递送装置的方法，其提供了所述药剂在受控制的单向释放理想率。药剂可以包括但不限于药物，蛋白质，肽，生物标志物，生物分析物和/或遗传物质。本发明的技术基于并行处理以在使用光刻和反应离子蚀刻技术的管上制造微孔，并且还包括简单的模制方法以在柔性聚合物管上形成微孔，包括生物可降解管。本发明的并行处理方法快速，经济，适用于批量生产。开发的器件由于其复合结构，具有组合几种释放机制的能力，导致大部分时间的零级释放动力学。

5. 发明授权

US4622205A Electromigration lifetime increase of lead base alloys 失效
标题翻译：铅基合金的电迁移寿命增加
公开(公告)号：US4622205A
公开(公告)日：1986-11-11
申请号：US722631
申请日：1985-04-12
申请人： David P. Fouts , Devandra Gupta , Paul S. Ho , Jasvir S. Jaspal , James R. Lloyd, Jr. , James M. Oberschmidt , Kris V. Srikrishnan , Michael J. Sullivan
发明人： David P. Fouts , Devandra Gupta , Paul S. Ho , Jasvir S. Jaspal , James R. Lloyd, Jr. , James M. Oberschmidt , Kris V. Srikrishnan , Michael J. Sullivan
IPC分类号： B23K1/00 , B23K35/26 , C22C1/00 , C22C11/06 , H01B1/02 , H01B13/00
CPC分类号： C22C11/06 , B23K35/268
摘要： Electromigration activity is decreased and lifetime is extended in solder stripes employed as conductors and terminals on microelectronic devices by forming an alloy of a solute element, such as copper, with tin in a lead/tin solder and providing a substantially uniform distribution of particles of the intermetallic compound in the solder. The concentration of the solute element is maintained at less than about three times the tin concentration and less than about 10% of the amount of the solder.
摘要翻译：通过在铅/锡焊料中形成诸如铜的溶质元素的合金和锡，并且提供基本上均匀分布的微粒子的微粒子的电子迁移活性降低，并且在微电子器件上用作导体和端子的焊料条中延长寿命焊料中的金属间化合物。溶质元素的浓度保持在小于锡浓度的约三倍且小于焊料量的约10％。

6. 发明授权

US4166279A Electromigration resistance in gold thin film conductors 失效
标题翻译：金薄膜电导率的电阻率
公开(公告)号：US4166279A
公开(公告)日：1979-08-28
申请号：US865810
申请日：1977-12-30
申请人： Amitava Gangulee , Paul S. Ho , James K. Howard
发明人： Amitava Gangulee , Paul S. Ho , James K. Howard
IPC分类号： H05K1/09 , B41J2/335 , H01B1/02 , H01B5/14 , H01F10/06 , H01L21/3205 , H01L23/532 , H01L23/48 , H01L29/46 , H01L29/54
CPC分类号： H01L21/32051 , H01B5/14 , H01F10/06 , H01L23/53242 , H01L23/53247 , H01L2924/0002
摘要： A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, and magnetic bubble structures, is set forth. The conductive stripe includes gold with at least one transition metal from the group niobium, zirconium and hafnium. The gold and at least one transition metal are deposited onto a supporting body. The deposited metallic material is then annealed at a temperature between about 200.degree. C. and 500.degree. C. for a time sufficient to form a gold-transition metal compound within a gold matrix. The conductive stripes are formed by masking and removing portions of the annealed metallic material to produce conductive stripes which may have a width of 6.times.10.sup.-4 inches or less. These stripes have significantly improved electromigration performance and do not have significantly increased resistance.

7. 发明授权

US4154874A Method for forming intermetallic layers in thin films for improved electromigration resistance 失效
标题翻译：在薄膜中形成金属间化合物以提高电迁移率的方法
公开(公告)号：US4154874A
公开(公告)日：1979-05-15
申请号：US765491
申请日：1977-02-04
申请人： James K. Howard , Paul S. Ho
发明人： James K. Howard , Paul S. Ho
IPC分类号： G11C11/14 , A01K1/01 , B41J2/335 , C22C21/00 , C23C14/00 , C23C14/16 , C23C14/58 , G11B5/31 , H01B1/02 , H01F10/06 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L23/532 , H01L29/43 , H05K1/09 , B05D5/12
CPC分类号： C23C14/16 , C23C14/58 , C23C14/5806 , C23C14/5893 , H01B1/023 , H01F10/06 , H01L21/32051 , H01L23/532 , H01L23/53219 , H01L23/53223 , H01L2924/0002 , Y10S148/02 , Y10T29/49121 , Y10T29/49204 , Y10T428/12486
摘要： A method for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200.degree. C. and 525.degree. C. for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6.times.10.sup.-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.
摘要翻译：用于形成窄的金属间条纹的方法，其将在诸如半导体，集成电路，磁性气泡结构等的体上携带高电流。导电条包括具有至少一种过渡金属的铝或铝铜。在基本上无氧的高真空中，铝和至少一种过渡金属以非常低的压力沉积在支撑体上。然后将复合材料在约200℃至525℃之间的温度下退火足以在铝内形成铝和过渡金属化合物的时间。然后通过掩蔽和去除退火金属材料的部分来形成导电条纹。所得到的导电条纹可以具有大约6×10 -4英寸或更小的宽度，具有显着改善的电迁移性能，而不会显着增加导电条纹中的电阻。

8. 发明授权

US09005649B2 Methods for making controlled delivery devices having zero order kinetics 有权
标题翻译：制备具有零级动力学的受控递送装置的方法
公开(公告)号：US09005649B2
公开(公告)日：2015-04-14
申请号：US13383820
申请日：2010-07-14
申请人： Paul S. Ho , Salomon Stavchansky , Phillip Bowman , Zhiquan Luo , Zhuojie Wu , Ashish Rastogi
发明人： Paul S. Ho , Salomon Stavchansky , Phillip Bowman , Zhiquan Luo , Zhuojie Wu , Ashish Rastogi
IPC分类号： A61F2/00 , A61F2/82 , A61F2/91 , A61F2/915 , A61L17/00 , A61L27/54 , A61L29/16 , A61L31/16 , A61M25/00
CPC分类号： A61B5/4839 , A61B5/076 , A61B5/686 , A61B17/06166 , A61B90/30 , A61B2560/0219 , A61F2/0063 , A61F2/06 , A61F2/24 , A61F2/82 , A61F2/91 , A61F2/915 , A61F9/0017 , A61F2220/005 , A61F2230/0013 , A61F2230/0054 , A61F2240/001 , A61F2250/0002 , A61F2250/0068 , A61F2310/00017 , A61F2310/00179 , A61F2310/00329 , A61K31/573 , A61L17/005 , A61L27/54 , A61L29/16 , A61L31/06 , A61L31/16 , A61L2300/43 , A61L2300/602 , A61M25/001 , A61M25/0017 , A61M25/0043 , A61M27/002 , A61M2025/0057
摘要： A method of making an injectable or implantable active agent delivery device capable of delivering a diagnostic, therapeutic, and/or prophylactic agent to a desired targeted site having orifice(s) on the surface is disclosed herein providing unidirectional release of the agent at a controlled desirable rate. The agent may include, but is not limited to, drugs, proteins, peptides, biomarkers, bioanalytes, and/or genetic material. The technology of the invention is based on parallel processing to fabricate micro-holes on tubes employing photo-lithography and reactive ion etching techniques and also incorporates a simple molding method to form the micro-holes on flexible polymer tubes, including bio-degradable tubes. The parallel processing method of the instant invention is fast, economical and well suited for mass production. The developed device, due to its composite structure, has the ability to combine several release mechanisms, leading to zero-order release kinetics for most of the time.
摘要翻译：本文公开了一种制备能够将诊断性，治疗性和/或预防性药物递送至表面上具有孔口的所需目标部位的可注射或可植入的活性剂递送装置的方法，其提供了所述药剂在受控制的单向释放理想率。药剂可以包括但不限于药物，蛋白质，肽，生物标志物，生物分析物和/或遗传物质。本发明的技术基于并行处理以在使用光刻和反应离子蚀刻技术的管上制造微孔，并且还包括简单的模制方法以在柔性聚合物管上形成微孔，包括生物可降解管。本发明的并行处理方法快速，经济，适用于批量生产。开发的器件由于其复合结构，具有组合几种释放机制的能力，导致大部分时间的零级释放动力学。

9. 发明申请

US20150054135A1 SELF-ALIGNED MASKS AND METHODS OF USE 有权
标题翻译：自对准掩模和使用方法
公开(公告)号：US20150054135A1
公开(公告)日：2015-02-26
申请号：US14466059
申请日：2014-08-22
申请人： Paul S. Ho , Zhuojie Wu
发明人： Paul S. Ho , Zhuojie Wu
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/027
CPC分类号： B81C1/00 , H01L21/0337 , H01L21/3086 , H01L21/31116 , H01L21/31122
摘要： The disclosure relates to a method for forming a nanoscale structure by forming a pattern on a selectively etched layer located on top of a substrate using lithography, wherein the pattern results a gap having sidewalls, performing RIE on the gap having sidewalls, wherein RIE results in the formation of a self-aligned mask on the bottom wall of the gap with unprotected regions on the bottom wall of the gap near the junctions with the sidewalls, and wet etching the gap having a self-aligned mask and unprotected regions to remove the substrate under the unprotected regions to form a nanoscale structure in the substrate.The disclosure also relates to a nanoscale structure array including a plurality of nanotrenches, nanochannels or nanofins having a width of 50 nm or less and an average variation in width of 5% or less along the entire length of each nanotrench, nanochannel or nanofin.
摘要翻译：本公开涉及一种用于通过使用光刻在位于衬底顶部的选择性蚀刻层上形成图案形成纳米尺度结构的方法，其中所述图案形成具有侧壁的间隙，在具有侧壁的间隙上执行RIE，其中RIE导致在与侧壁接合的间隙的底壁上的未保护区域的间隙的底壁上形成自对准掩模，并且湿蚀刻具有自对准掩模和未保护区域的间隙以去除衬底在未保护的区域下，在衬底中形成纳米尺度结构。本公开还涉及纳米尺度结构阵列，其包括沿着每个纳米管，纳米通道或纳米芬的整个长度的宽度为50nm或更小的宽度为5％或更小的多个纳米管，纳米通道或纳米线。

10. 发明授权

US4316209A Metal/silicon contact and methods of fabrication thereof 失效
标题翻译：金属/硅接触及其制造方法
公开(公告)号：US4316209A
公开(公告)日：1982-02-16
申请号：US071528
申请日：1979-08-31
申请人： Paul S. Ho , Uwe Koster , Tung-Sheng Kuan , Iwao Ohdomari , Arnold Reisman
发明人： Paul S. Ho , Uwe Koster , Tung-Sheng Kuan , Iwao Ohdomari , Arnold Reisman
IPC分类号： H01L29/43 , H01L21/28 , H01L21/285 , H01L29/45 , H01L29/47 , H01L29/872 , H01L23/48 , H01L29/46 , H01L29/62
CPC分类号： H01L21/28518 , H01L21/28537 , H01L29/456 , H01L29/47
摘要： Methods and resulting structures for thermally stable metal/silicon contacts are described. The resulting contacts are aluminum which is alloyed with at least one noble metal from the group of Pd and Pt wherein at least one region of the contact is further alloyed with silicon.
摘要翻译：描述了用于热稳定的金属/硅接触的方法和结果。所得到的触点是铝，其与至少一种来自Pd和Pt的贵金属合金化，其中接触的至少一个区域进一步与硅合金化。

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