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1. 发明申请

US20220058350A1 ELECTRONIC CARD HAVING AN ELECTRONIC INTERFACE 有权
公开(公告)号：US20220058350A1
公开(公告)日：2022-02-24
申请号：US17519732
申请日：2021-11-05
申请人： Apple Inc.
发明人： Peter N. Russell-Clarke , Rafael L. Dionello
IPC分类号： G06K7/00 , G06K19/077 , H01F10/06
摘要： This disclosure is directed to an electronic identification card or electronic card having various features. The electronic card may include an integrated circuit and a contact plate for electrically interfacing with the integrated circuit. The contact plate may include an array of terminal electrodes that are offset with respect to the edges of the contact plate. The electronic card may be coated with a coating layer that extends at least partially over a ferromagnetic element or film. The electronic card may also include a metal substrate having exposed chamfer portions that may provide a visual contrast to the coating layer and also improve the handling and use of the electronic card.

2. 发明授权

US11200385B2 Electronic card having an electronic interface 有权
公开(公告)号：US11200385B2
公开(公告)日：2021-12-14
申请号：US16526814
申请日：2019-07-30
申请人： Apple Inc.
发明人： Peter N. Russell-Clarke , Rafael L. Dionello
IPC分类号： G06K7/00 , G06K19/077 , H01F10/06
摘要： This disclosure is directed to an electronic identification card or electronic card having various features. The electronic card may include an integrated circuit and a contact plate for electrically interfacing with the integrated circuit. The contact plate may include an array of terminal electrodes that are offset with respect to the edges of the contact plate. The electronic card may be coated with a coating layer that extends at least partially over a ferromagnetic element or film. The electronic card may also include a metal substrate having exposed chamfer portions that may provide a visual contrast to the coating layer and also improve the handling and use of the electronic card.

3. 发明授权

US10650948B2 Inductor 有权
公开(公告)号：US10650948B2
公开(公告)日：2020-05-12
申请号：US15675286
申请日：2017-08-11
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hun Kim
IPC分类号： H01F5/00 , H01F17/00 , H01F27/29 , H01F27/32 , H01F5/04 , H01F10/06 , H01F17/04
摘要： An inductor includes: a body including a coil and a magnetic material, and external electrodes disposed on an outer surface of the body. The coil is supported by a support member, and the support member may also support an insulating wall including an open-hole pattern having a shape corresponding to a pattern of the coil. An insulating ribbon formed so that a length thereof is greater than a width thereof may be additionally disposed on at least a portion of an upper surface of the insulating wall.

4. 发明申请

US20180166194A1 INDUCTOR 审中-公开
公开(公告)号：US20180166194A1
公开(公告)日：2018-06-14
申请号：US15675316
申请日：2017-08-11
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Woon Chul CHOI
IPC分类号： H01F5/00 , H01F10/06 , H01F5/04 , H01F17/00
CPC分类号： H01F5/003 , H01F5/04 , H01F10/06 , H01F17/0013 , H01F17/04 , H01F27/323 , H01F27/324 , H01F2005/046 , H01F2017/002 , H01F2017/048
摘要： An inductor includes a support member, a plurality of conductor patterns disposed on at least one surface of the support member and supported by the support member, and an insulating structure interposed between conductor patterns adjacent each other among the plurality of conductor patterns, the insulating structure including a first insulating layer and a second insulating layer disposed on the first insulating layer, the second insulating layer covering side and upper surfaces of the conductor patterns, the second insulating layer being continuously formed along the side and upper surfaces of the conductor pattern, depending on external shapes of the side and upper surfaces of the conductor pattern disposed below the second insulating layer.

5. 发明申请

US20050174701A1 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized against vortex magnetic domains generated by the sense current 失效
标题翻译：电流垂直于平面的磁阻传感器，具有由感应电流产生的涡流磁畴的自由层
公开(公告)号：US20050174701A1
公开(公告)日：2005-08-11
申请号：US10776484
申请日：2004-02-10
申请人： Prakash Kasiraj , Stefan Maat
发明人： Prakash Kasiraj , Stefan Maat
IPC分类号： G11B5/39 , G01R33/09 , G11B5/127 , G11B5/33 , H01F10/06 , H01F41/14 , H01L43/08 , H01L43/12
CPC分类号： G11B5/39 , G11B5/1278
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has additional layers for stabilizing the free layer against sense-current-generated magnetic fields. A ferromagnetic stabilizing layer is spaced from the free layer by a spacer layer and is exchange coupled with a second antiferromagnetic layer, the first antiferromagnetic layer being the conventional one for pinning the pinned layer in the CPP sensor. The stabilizing layer is in a vortex or other non-longitudinal magnetization pattern that is fixed by exchange coupling with the second antiferromagnetic layer. The stabilizing layer is also ferromagnetically coupled to the free layer across the spacer layer so that in the absence of both a sense current and an external magnetic field, the free and stabilization layers have similarly shaped vortex or other non-longitudinal magnetization patterns. The sense current generates a vortex magnetic field in the free layer opposite to the fixed vortex magnetization pattern in the stabilizing layer and essentially erases the effect of the vortex magnetization pattern in the free layer.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有用于使自由层稳定于感测电流产生的磁场的附加层。铁磁稳定层通过间隔层与自由层间隔开并与第二反铁磁层交换耦合，第一反铁磁层是用于固定CPP传感器中被钉扎层的常规的。稳定层是通过与第二反铁磁层的交换耦合固定的涡流或其它非纵向磁化模式。稳定层还通过间隔层铁磁耦合到自由层，使得在不存在感测电流和外部磁场的情况下，自由和稳定层具有类似形状的涡流或其它非纵向磁化模式。感应电流在自由层中产生与稳定层中的固定涡流磁化模式相反的涡流磁场，并且基本上消除了自由层中的涡流磁化模式的影响。

6. 发明授权

US06882509B2 GMR configuration with enhanced spin filtering 有权
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06882509B2
公开(公告)日：2005-04-19
申请号：US10791021
申请日：2004-03-02
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/00 , H01F10/06 , H01F10/12 , H01F10/14 , H01F10/16 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译：公开了一种制造SVGMR传感器元件的方法。在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。金属氧化物缓冲层增强了镜面散射。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

7. 发明授权

US4578321A Altering the switching threshold of a magnetic material 失效
标题翻译：改变磁性材料的切换阈值
公开(公告)号：US4578321A
公开(公告)日：1986-03-25
申请号：US503404
申请日：1983-06-13
申请人： William E. Ross , Bruce E. MacNeal
发明人： William E. Ross , Bruce E. MacNeal
IPC分类号： G02F1/09 , G11C11/14 , H01F10/06 , H01F10/08 , H01F10/30
CPC分类号： G02F1/09 , G11C11/14 , H01F10/06 , H01F10/08 , H01F10/30 , Y10S428/90
摘要： A low-anisotropy magnetic material is exchange coupled in juxtaposition with a compatible body of high-anisotropy magnetic material so that a reduced external magnetic field is required for the nucleation and passage of a domain wall from the low-anisotropy material, through the interface between the low- and high-anisotropy materials, and into the high-anisotropy material. The propagation of the domain wall continues to affect a reversal in the direction of magnetization in the high-anisotropy material.
摘要翻译：低各向异性磁性材料与高度各向异性磁性材料的兼容体并置地交换耦合，从而需要减小的外部磁场，使畴壁从低各向异性材料的成核和通过，通过低，高各向异性材料，并进入高各向异性材料。畴壁的传播继续影响高各向异性材料中磁化方向的反转。

8. 发明授权

US4417323A Bubble memory conductor pattern with heat sink 失效
标题翻译：泡沫记忆导体图案带散热片
公开(公告)号：US4417323A
公开(公告)日：1983-11-22
申请号：US234630
申请日：1981-02-17
申请人： Atsushi Asano , Masatoshi Takeshita , Hideki Nishida , Ryo Suzuki , Toshio Futami
发明人： Atsushi Asano , Masatoshi Takeshita , Hideki Nishida , Ryo Suzuki , Toshio Futami
IPC分类号： G11C11/14 , G11C19/08 , H01F10/06 , H01L21/3205 , H01L23/34 , H01L23/52 , H05K1/02
CPC分类号： H05K1/0209 , G11C19/085 , H01F10/06 , H01L2924/0002 , H05K2201/0769 , H05K2201/09781
摘要： A micro-pattern element has a heat discharge pattern formed on a fine line portion of a conductor pattern. Breakage caused by temperature elevation of the conductor pattern in response to the application of an electric current and resulting electromigration can be effectively prevented by the heat-discharge pattern formed on the fine line portion of the conductor pattern; thus, the reliability of the micro-pattern element can be remarkably improved.
摘要翻译：微图案元件具有形成在导体图案的细线部分上的放热图案。可以通过形成在导体图案的细线部分上的放热图案，有效地防止导体图案由于施加电流而导致的温度升高导致的破坏，导致电迁移; 因此，可以显着提高微图案元件的可靠性。

9. 发明授权

US4272348A Bubble device fabrication 失效
标题翻译：气泡装置制造
公开(公告)号：US4272348A
公开(公告)日：1981-06-09
申请号：US962251
申请日：1978-11-20
申请人： Daniel E. Cox , Susan M. Kane , John V. Powers
发明人： Daniel E. Cox , Susan M. Kane , John V. Powers
IPC分类号： G11C11/14 , G11C19/08 , H01F10/06 , H01F10/12 , H01F10/13 , H01F41/14 , H01F41/34 , C23C15/00 , C23F1/02
CPC分类号： H01F41/34 , G11C19/0808 , H01F10/06 , Y10T29/49069
摘要： A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.
摘要翻译：用于产生需要非常细线宽的微电子结构的单层掩模工艺，例如磁性气泡域装置。这是使用非常薄的附加电镀掩模的减法干法，以获得最佳的光刻分辨率。使用非常薄的电镀掩模消除了对分辨率的不利影响的厚抗蚀剂层的需要。在一个实例中，使用薄的Ti（或Cr）掩模来图案化包括导体层（例如Au）和上覆的软磁性层（例如NiFe）的双层冶金。使用NiFe掩模对Ti掩模进行减法图案化，NiFe掩模本身通过电镀通过薄的抗蚀剂层进行图案化。将双层NiFe / Au结构图案化以提供具有高纵横比，良好图案敏锐度和均匀厚度的器件，其中最小特征为1微米或更小。

10. 发明授权

US4094002A Sacrificial arc suppressors in magnetic bubble memories 失效
标题翻译：磁性气泡存储器中的牺牲电弧抑制器
公开(公告)号：US4094002A
公开(公告)日：1978-06-06
申请号：US779839
申请日：1977-03-21
申请人： Andrew Henry Bobeck
发明人： Andrew Henry Bobeck
IPC分类号： G11C19/08 , H01F10/06 , H01F41/34
CPC分类号： H01F10/06 , G11C19/085 , H01F41/34
摘要： Magnetic bubble memory chips herein are characterized by circuits of permalloy and/or electrical conductors which include patterns designed to be sacrificed if electrical charges build up during processing or handling. Improved chip yield results.
摘要翻译：这里的磁性气泡存储器芯片的特征在于坡莫合金和/或电导体的电路，其包括设计为在加工或处理期间电荷积聚时被牺牲的图案。提高芯片产量结果。

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