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1. 发明授权

US4231816A Amorphous metallic and nitrogen containing alloy films 失效
标题翻译：无定形金属和含氮合金膜
公开(公告)号：US4231816A
公开(公告)日：1980-11-04
申请号：US866115
申请日：1977-12-30
申请人： Jerome J. Cuomo , Amitava Gangulee , John Kobliska
发明人： Jerome J. Cuomo , Amitava Gangulee , John Kobliska
IPC分类号： C22C1/00 , C22C45/04 , C23C14/00 , C23C14/14 , C23C30/00 , H01C7/00 , H01F10/12 , H01F10/13 , H01F10/14 , H01F41/18 , C04B35/00
CPC分类号： C22C45/04 , C23C14/0036 , C23C30/00 , H01C7/006 , H01F10/131 , Y10T428/31522
摘要： These amorphous metal-alloy films include nitrogen, greater than about one atomic percent at least one transition metal selected from Cr, Fe, Co and Ni with at least one element forming an amorphous alloy therewith, selected from the "glass forming" elements, i.e., B, Si, Al, C and P. The alloys can be formed by deposition in a vacuum chamber. When films are sputtered, the target is composed of the above alloy elements with at least one element selected from each of the transition metal and glass forming element groups. Sputtering occurs in an atmosphere above about 2% vol. N.sub.2 gas mixed with an inert gas, e.g., Ar. Alloys produced include N, i.e., (Co-Fe-B)N and (Fe-B)N. Above about 2 atomic % N in the film, films have lower values of saturation magnetization 4.pi.M.sub.s. Above a 2% vol. N.sub.2 gas in the plasma, electrical resistivity increases. Over 0.5% vol. N.sub.2 gas in the plasma, the film's effective perpendicular anisotropy field H.sub.k.sup.* increases. For (Co-Fe-B)N, the anisotropy direction moves from in plane to perpendicular above 2% vol. N.sub.2 plasmas. For (Fe-B)N, H.sub.k.sup.* increases with N.sub.2 up to 10% vol. N.sub.2 plasma. The N% in a film varies linearly with the log of N.sub.2 % vol. Films show markedly improved adhesion, corrosion resistance and hardness. Magnetic thermal stability increases with N.sub.2 above about 5% vol. N.sub.2 in a plasma. Structural and magnetic properties are stable for annealing up to 400.degree. C.
摘要翻译：这些非晶金属合金膜包括大于约1原子％的选自Cr，Fe，Co和Ni中的至少一种过渡金属与选自“玻璃形成”元素的至少一种元素形成非晶合金的氮，即，B，Si，Al，C和P.合金可以通过沉积在真空室中形成。当溅射薄膜时，靶材由上述合金元素组成，其中至少一种元素选自过渡金属和玻璃形成元素组。溅射发生在高于约2％vol的气氛中。与惰性气体混合的N 2气体，例如Ar。所生产的合金包括N，即（Co-Fe-B）N和（Fe-B）N。膜中的约2原子％N以上，膜具有较低的饱和磁化强度，等离子体中的N2气体，电阻率增加。超过0.5％等离子体中的N2气体，膜的有效垂直各向异性场Hk *增加。对于（Co-Fe-B）N，各向异性方向从平面延伸到垂直于2％vol以上。 N2等离子体。对于（Fe-B）N，Hk *随着N2增加至10体积％。 N2等离子体。膜中的N％随着N2％体积的对数线性变化。膜显示出显着改善的附着力，耐腐蚀性和硬度。磁性热稳定性随着N2高于约5％vol而增加。 N2在等离子体中。结构和磁性能在400℃退火时是稳定的。

2. 发明授权

US4319264A Nickel-gold-nickel conductors for solid state devices 失效
标题翻译：用于固态器件的镍 - 镍镍导体
公开(公告)号：US4319264A
公开(公告)日：1982-03-09
申请号：US103970
申请日：1979-12-17
申请人： Amitava Gangulee , Paul S. Ho , James K. Howard , Robert J. Miller
发明人： Amitava Gangulee , Paul S. Ho , James K. Howard , Robert J. Miller
IPC分类号： H01L21/3205 , H01L23/482 , H01L23/532 , H01L23/48 , H01L29/46 , H01L29/54
CPC分类号： H01L23/53242 , H01L21/32051 , H01L23/4827 , H01L23/53252 , H01L2924/0002
摘要： A laminated conductor includes a lower thin film of nickel deposited upon a substrate containing silicon. Upon the film of nickel, a thicker film of gold is deposited as the conductive portion of the conductor. On the upper surface of the gold layer is deposited a thin film of nickel. Failure of the conductor because of electromigration is reduced dramatically as compared with use of molybdenum instead of nickel in the laminated structure.
摘要翻译：叠层导体包括沉积在含有硅的衬底上的镍的下部薄膜。在镍膜上沉积较厚的金膜作为导体的导电部分。在金层的上表面上沉积镍薄膜。与在层压结构中使用钼代替镍相比，由于电迁移导体导体的故障显着降低。

3. 发明授权

US4236946A Amorphous magnetic thin films with highly stable easy axis 失效
标题翻译：非晶磁性薄膜具有高度稳定的易轴
公开(公告)号：US4236946A
公开(公告)日：1980-12-02
申请号：US886020
申请日：1978-03-13
申请人： Joseph A. Aboaf , Jerome J. Cuomo , Amitava Gangulee , Robert J. Kobliska
发明人： Joseph A. Aboaf , Jerome J. Cuomo , Amitava Gangulee , Robert J. Kobliska
IPC分类号： C23C14/00 , C21D6/00 , C22F1/00 , C23C14/14 , C23C14/58 , H01F10/12 , H01F10/13 , H01F10/14 , H01F41/14 , C21D1/04
CPC分类号： C23C14/5806 , C23C14/14 , C23C14/58 , C23C14/584 , H01F10/132 , Y10S428/90
摘要： A sputtered thin film of an amorphous material composed of a magnetic transition metal X and element Y plus possibly an element Z has low coercivity for domains in the plane, has a well defined and stable magnetic easy axis which is extremely stable without heating above the Curie point, with a high and flat value of permeability from low frequencies to greater than 10 megahertz. Metal X can include at least one of Fe, Ni, and Co. Element Y can include at least one of Si and B. Element Z can be included composed of Cr, for example.
摘要翻译：由磁性过渡金属X和元素Y以及可能的元素Z组成的非晶材料的溅射薄膜对于平面中的畴具有低矫顽力，具有良好限定且稳定的易磁化轴，其非常稳定而不加热居里具有从低频到大于10兆赫的高平坦的磁导率值。金属X可以包括Fe，Ni和Co中的至少一种。元素Y可以包括Si和B中的至少一种。元素Z可以包括例如由Cr构成。

4. 发明授权

US4166279A Electromigration resistance in gold thin film conductors 失效
标题翻译：金薄膜电导率的电阻率
公开(公告)号：US4166279A
公开(公告)日：1979-08-28
申请号：US865810
申请日：1977-12-30
申请人： Amitava Gangulee , Paul S. Ho , James K. Howard
发明人： Amitava Gangulee , Paul S. Ho , James K. Howard
IPC分类号： H05K1/09 , B41J2/335 , H01B1/02 , H01B5/14 , H01F10/06 , H01L21/3205 , H01L23/532 , H01L23/48 , H01L29/46 , H01L29/54
CPC分类号： H01L21/32051 , H01B5/14 , H01F10/06 , H01L23/53242 , H01L23/53247 , H01L2924/0002
摘要： A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, and magnetic bubble structures, is set forth. The conductive stripe includes gold with at least one transition metal from the group niobium, zirconium and hafnium. The gold and at least one transition metal are deposited onto a supporting body. The deposited metallic material is then annealed at a temperature between about 200.degree. C. and 500.degree. C. for a time sufficient to form a gold-transition metal compound within a gold matrix. The conductive stripes are formed by masking and removing portions of the annealed metallic material to produce conductive stripes which may have a width of 6.times.10.sup.-4 inches or less. These stripes have significantly improved electromigration performance and do not have significantly increased resistance.

5. 发明授权

US4012756A Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith 失效
标题翻译：从而抑制膜和膜中的小丘形成的方法和其多层结构
公开(公告)号：US4012756A
公开(公告)日：1977-03-15
申请号：US544462
申请日：1975-01-27
申请人： Praveen Chaudhari , Francois M. D'Heurle , Amitava Gangulee
发明人： Praveen Chaudhari , Francois M. D'Heurle , Amitava Gangulee
IPC分类号： H01B1/00 , H01F10/06 , H01F10/10 , H01L21/00 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L39/24 , H01L27/12
CPC分类号： H01L39/2493 , H01B1/00 , H01F10/06 , H01F10/10 , H01L21/00 , H01L21/32051 , H01L21/76886 , H01L23/53209 , H01L23/53219 , H01L39/24 , H01L2924/0002 , H01L2924/3011 , Y10S505/874
摘要： In accordance with the disclosure, certain impurities, e.g., alloying additions, are introduced in thin metal film to negate the driving force or the effect of the driving force which causes the hillock formation. Such thin metallic films are usually fabricated on the substrates which have different thermal coefficients of expansion than the film itself, and during thermal cycling stresses can be introduced into the film. This stress may serve as a driving force for atom movement and, therefore, to the formation of hillocks. The vehicle by which the induced stress in a film effects the requisite atom movement is via defect movement, and when the force is compressive this gives rise to hillocks. In the practice of this disclosure, impurity additions introduced into a film affect hillock growth by their interaction with the defects which give rise to the requisite atom movement. Systematically selected impurity additions are introduced into a film during fabrication thereof which inhibit the defect movement in the class consisting of a migration of point defects, linear defects and planar defects wherein the linear defects are dislocations and the planar defects are grain boundaries. Usually, the addition of impurities into a metal film is termed alloying and the resultant film is termed an alloyed film. The alloying addition may be either soluble or insoluble in the film. This will determine the choice of possible modes of fabrication. When the alloy addition is soluble, it is included within the limits of solubility at the temperature at which it is introduced. When the alloy addition is insoluble, it is introduced during fabrication and quantity thereof may be significantly better than the quantity capable of being sustained were the alloying addition and the film to be in thermal equilibrium.
摘要翻译：根据本公开内容，在薄金属膜中引入某些杂质，例如合金化添加物，以消除导致小丘形成的驱动力或驱动力的影响。这种薄金属膜通常制造在具有不同于膜本身的不同热膨胀系数的基板上，并且在热循环过程中可以将应力引入膜中。这种压力可能作为原子运动的驱动力，因此可能是形成小丘。通过缺陷运动，膜中的诱发应力导致必需的原子运动的载体，并且当力被压缩时，这引起小丘。在本公开的实践中，引入膜中的杂质添加物通过与引起必需原子运动的缺陷的相互作用影响小丘生长。在其制造期间，将系统选择的杂质添加物引入到膜中，其抑制由缺陷偏移，线性缺陷和平面缺陷组成的类别中的缺陷运动，其中线性缺陷是位错并且平面缺陷是晶界。通常，将杂质添加到金属膜中称为合金化，所得到的膜称为合金膜。合金添加可以是可溶的或不溶于膜。这将决定可能的制造方式的选择。当合金添加是可溶的时，它被包括在其引入温度下的溶解度范围内。当合金添加不溶时，其在制造过程中被引入，并且其量可以显着地优于合金添加和处于热平衡的膜中能够持续的量。

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