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1. 发明授权

US5886459A Enhanced field emission from microtip structures 失效
标题翻译：从微尖端结构增强场发射
公开(公告)号：US5886459A
公开(公告)日：1999-03-23
申请号：US777936
申请日：1996-12-23
申请人： Orlando H. Auciello , Alan R. Krauss , Gary E. McGuire , Dieter M. Gruen
发明人： Orlando H. Auciello , Alan R. Krauss , Gary E. McGuire , Dieter M. Gruen
IPC分类号： H01J9/02
CPC分类号： H01J9/025 , H01J2201/30426
摘要： A method and system for manufacturing a field emission cathode having enhanced electron emission properties. The field emission cathode is prepared by providing a field emission substrate, an alkali metal alloy is formed at and below the exposed surface of the substrate, and a surface layer of alkali metal atoms are formed on the exposed surface by Gibbsian diffusion segregation action. If the monolayer, or surface layer, is desorbed, the diffusion action reestablishes the alkali metal surface layer thereby providing a stable alkali metal layer and enhanced electron emission characteristics.
摘要翻译：一种具有增强的电子发射特性的场致发射阴极的制造方法和系统。通过设置场致发射基板来制备场发射阴极，在基板的暴露表面和下面形成碱金属合金，通过吉布斯扩散分离作用在暴露的表面上形成碱金属原子的表面层。如果单层或表层被解吸，则扩散作用重新建立了碱金属表面层，从而提供稳定的碱金属层和增强的电子发射特性。

2. 发明授权

US06793849B1 N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom 有权
标题翻译：具有氮的纳米晶金刚石薄膜的N型滴下和由其制成的电极
公开(公告)号：US06793849B1
公开(公告)日：2004-09-21
申请号：US10398427
申请日：2003-12-12
申请人： Dieter M. Gruen , Alan R. Krauss , Orlando H. Auciello , John A. Carlisle
发明人： Dieter M. Gruen , Alan R. Krauss , Orlando H. Auciello , John A. Carlisle
IPC分类号： H01B104
CPC分类号： B82Y30/00 , C23C16/274 , C23C16/278 , C30B25/105 , C30B29/04 , C30B29/605 , H01B1/04
摘要： An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 1019 atoms/cm3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.
摘要翻译：公开了具有不小于10 19原子/ cm 3的氮的导电n型超微晶金刚石（UNCD）。制造n掺杂UNCD的方法。还公开了可预测地控制电导率的方法。

3. 发明授权

US5849079A Diamond film growth argon-carbon plasmas 失效
标题翻译：金刚石膜生长氩 - 碳等离子体
公开(公告)号：US5849079A
公开(公告)日：1998-12-15
申请号：US417154
申请日：1995-04-04
申请人： Dieter M. Gruen , Alan R. Krauss , Shengzhong Liu , Xianzheng Pan , Christopher D. Zuiker
发明人： Dieter M. Gruen , Alan R. Krauss , Shengzhong Liu , Xianzheng Pan , Christopher D. Zuiker
IPC分类号： C01B31/06 , C23C14/06 , C23C14/22 , C23C16/27 , C23C16/448 , C30B23/00 , C30B23/02 , C30B25/10 , C30B33/00 , H01J9/02 , C30B29/04
CPC分类号： C01B31/06 , C23C14/0605 , C23C14/0611 , C23C14/221 , C23C16/27 , C23C16/274 , C23C16/277 , C23C16/4481 , C30B23/002 , C30B23/02 , C30B25/105 , C30B29/04 , C30B29/605 , C30B33/00 , H01J9/025
摘要： A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.
摘要翻译：制造金刚石薄膜的方法和系统。该方法包括形成含碳蒸气，提供氩气，氢气和烃的气流，并将气体与碳质蒸气结合，使合并的碳质蒸汽和气体载体物流进入腔室，在室中形成等离子体，从而导致碳质和金刚石膜沉积在基底上。

4. 发明授权

US5772760A Method for the preparation of nanocrystalline diamond thin films 失效
标题翻译：制备纳米晶金刚石薄膜的方法
公开(公告)号：US5772760A
公开(公告)日：1998-06-30
申请号：US540916
申请日：1995-10-11
申请人： Dieter M. Gruen , Alan R. Krauss
发明人： Dieter M. Gruen , Alan R. Krauss
IPC分类号： C01B31/06 , C23C14/06 , C23C14/22 , C23C16/27 , C23C16/448 , C30B23/00 , C30B23/02 , C30B25/10 , C30B33/00 , H01J9/02 , C30B31/06
CPC分类号： C30B23/002 , C01B31/06 , C23C14/0605 , C23C14/0611 , C23C14/221 , C23C16/27 , C23C16/274 , C23C16/277 , C23C16/4481 , C30B23/02 , C30B25/105 , C30B29/04 , C30B29/605 , C30B33/00 , H01J9/025 , Y10S977/843
摘要： A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.
摘要翻译：一种用于在衬底上制造纳米晶金刚石膜的方法和系统，例如场发射尖端。该方法包括形成碳质蒸气，提供氩气，烃和可能的氢气流，并将气体与碳质蒸气结合，使合并的碳质蒸气和气体载体物流进入室，在室内形成等离子体，引起碎片化的碳质蒸气和金刚石膜沉积在场致发射尖端上。

5. 发明授权

US06592839B2 Tailoring nanocrystalline diamond film properties 失效
标题翻译：裁剪纳米晶金刚石膜性能
公开(公告)号：US06592839B2
公开(公告)日：2003-07-15
申请号：US09255919
申请日：1999-02-23
申请人： Dieter M. Gruen , Thomas G. McCauley , Dan Zhou , Alan R. Krauss
发明人： Dieter M. Gruen , Thomas G. McCauley , Dan Zhou , Alan R. Krauss
IPC分类号： B01J306
CPC分类号： C30B23/005 , C01B32/25 , C23C14/0605 , C23C14/0611 , C23C14/221 , C23C16/27 , C23C16/274 , C23C16/277 , C23C16/4481 , C30B23/00 , C30B23/002 , C30B23/02 , C30B25/105 , C30B29/04 , C30B29/605 , C30B33/00 , H01J9/025
摘要： A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.
摘要翻译：用于控制等离子体沉积的金刚石膜的微晶尺寸和生长速率的方法。在超过约55托的压力下建立等离子体，控制浓度高达约98体积％的氢化物，至多约3体积％的未取代烃和惰性气体和氮气中的一种或多种的惰性气体高达约98％。惰性气体与氢气的体积比优选保持在大于约4°，以将金刚石膜沉积在合适的基底上。金刚石膜以预定的微晶尺寸和预定的生长速率沉积。

6. 发明授权

US06422077B1 Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor 有权
标题翻译：超晶体金刚石悬臂宽动态范围加速/振动/压力传感器
公开(公告)号：US06422077B1
公开(公告)日：2002-07-23
申请号：US09543992
申请日：2000-04-06
申请人： Alan R. Krauss , Dieter M. Gruen , Michael J. Pellin , Orlando Auciello
发明人： Alan R. Krauss , Dieter M. Gruen , Michael J. Pellin , Orlando Auciello
IPC分类号： G01P1508
CPC分类号： G01H9/00 , B82Y35/00 , G01D5/30 , G01H11/06 , G01L1/005 , G01L1/044 , G01P15/0888 , G01P15/0894 , G01P15/093 , Y10S977/732 , Y10S977/932
摘要： An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/N2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.
摘要翻译：在一个高灵敏度的超小型传感器中，采用悬臂结构形成的超微晶金刚石（UNCD）元件用于在宽动态范围内测量加速度，冲击，振动和静压力。悬臂UNCD元件可以与单个阳极组合使用，测量光学或电容测量。在另一个实施例中，悬臂UNCD元件设置在两个阳极之间，其中DC电压施加到两个阳极。通过施加到UNCD悬臂元件的小的AC调制电压，并且由于Fowler-Nordheim方程中施加的电压和阳极 - 阴极间隙距离的对称性，维持指定的阳极电压比V1 / N2的任何变化电流比精确匹配UNCD悬臂元件的任何位移与平衡。通过测量维持指定电流比所需的阳极电压比的变化，可以精确地确定UNCD悬臂的偏转。通过适当地调制在UNCD悬臂与两个阳极之间施加的电压或极限电极，可以精确地独立测量压力，单轴加速度，振动和冲击。本发明还考虑了用于制造用于传感器的悬臂UNCD结构的方法。

7. 发明授权

US5620512A Diamond film growth from fullerene precursors 失效
标题翻译：富勒烯前体金刚石膜生长
公开(公告)号：US5620512A
公开(公告)日：1997-04-15
申请号：US143866
申请日：1993-10-27
申请人： Dieter M. Gruen , Shengzhong Liu , Alan R. Krauss , Xianzheng Pan
发明人： Dieter M. Gruen , Shengzhong Liu , Alan R. Krauss , Xianzheng Pan
IPC分类号： C01B31/06 , C23C14/06 , C23C16/27 , C30B23/02 , C30B25/10 , C30B33/00 , H01J9/02 , C30B29/04
CPC分类号： C23C16/274 , C01B31/06 , C23C14/0605 , C23C14/0611 , C23C16/27 , C23C16/277 , C30B23/02 , C30B25/105 , C30B29/04 , C30B33/00 , H01J9/025
摘要： A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.
摘要翻译：制造金刚石薄膜的方法和系统。该方法包括形成富勒烯蒸汽，提供惰性气体流并将气体与富勒烯蒸汽组合，将富勒烯蒸气和惰性气体载体流合并到室中，在室中形成等离子体，引起富勒烯的碎裂和沉积在基板上的金刚石膜。

8. 发明授权

US06447851B1 Field emission from bias-grown diamond thin films in a microwave plasma 失效
标题翻译：微波等离子体中偏置生长金刚石薄膜的场发射
公开(公告)号：US06447851B1
公开(公告)日：2002-09-10
申请号：US09352063
申请日：1999-07-14
申请人： Dieter M. Gruen , Alan R. Krauss , Ming Q. Ding , Orlando Auciello
发明人： Dieter M. Gruen , Alan R. Krauss , Ming Q. Ding , Orlando Auciello
IPC分类号： H05H124
CPC分类号： C23C16/274 , C23C16/26 , C23C16/279 , H01J9/025 , Y10S427/104
摘要： A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between −100V and −200 are preferred. Carbon sources may be one or more of CH4, C2H2 other hydrocarbons and fullerenes.
摘要翻译：一种制造金刚石或类金刚石膜的方法，其中在微波等离子体化学气相沉积系统中在具有导电表面的基板上建立负偏压。经受微波能量的气氛包括碳源，氮气和氢气。通过膜的成核和生长阶段，在衬底上保持负偏压，直到膜是连续的。 -100V至-200之间的偏压是优选的。碳源可以是CH4，C2H2其他烃和富勒烯中的一种或多种。

9. 发明授权

US06008491A Time-of-flight SIMS/MSRI reflectron mass analyzer and method 失效
标题翻译：飞行时间SIMS / MSRI反射体质量分析仪和方法
公开(公告)号：US06008491A
公开(公告)日：1999-12-28
申请号：US953792
申请日：1997-10-15
申请人： Vincent S. Smentkowski , Dieter M. Gruen , Alan R. Krauss , J. Albert Schultz , John C. Holecek
发明人： Vincent S. Smentkowski , Dieter M. Gruen , Alan R. Krauss , J. Albert Schultz , John C. Holecek
IPC分类号： G01Q60/00 , H01J49/40 , H01J37/08 , B01D59/44 , H01J49/00
CPC分类号： H01J49/405 , H01J2237/2527
摘要： A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSRI) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle .theta., where .theta. is the angle between the horizontal axis of the mass analyzer and the undeflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, .theta. is less than or equal to about 120.degree. and, more preferably, equal to 74.degree.. For positive ion analysis, the extractor, lens, and front ring of the reflectron are set at negative high voltages (-HV). The back ring of the reflectron is set at greater than about +700V for MSRI measurements and between the range of about +15 V and about +50V for SIMS measurements. The method further comprises inverting the polarity of the potentials applied to the extractor, lens, front ring, and back ring to obtain negative ion SIMS and/or MSRI data.
摘要翻译：提供了通过二次离子质谱（SIMS）和回收离子质谱（MSRI）分析样品的表面特性的方法和装置。该方法包括通过离子束表面分析技术检测背散射的一次离子，低能量喷射物质和高能量喷射物质，包括以预定角度θ定位ToF SIMS / MSRI质量分析器，其中θ是水平轴质量分析器和未偏转的一次离子束线，并向分析器的背环施加特定电压。 θ优选小于或等于约120°，更优选等于74°。对于正离子分析，反射器的提取器，透镜和前环设置为负高电压（-HV）。对于MSRI测量，反射镜的背环设置为大于约+ 700V，对于SIMS测量，反射镜的背环设置在大约+ 70V和约+ 50V的范围之间。该方法还包括反转施加到提取器，透镜，前环和后环的电位的极性，以获得负离子SIMS和/或MSRI数据。

10. 发明授权

US06811612B2 Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices 有权
标题翻译：用于MEMS和其他器件的金刚石微结构的纳米晶金刚石膜的图案化
公开(公告)号：US06811612B2
公开(公告)日：2004-11-02
申请号：US10169879
申请日：2002-11-08
申请人： Dieter M. Gruen , Hans-Gerd Busmann , Eva-Maria Meyer , Orlando Auciello , Alan R. Krauss
发明人： Dieter M. Gruen , Hans-Gerd Busmann , Eva-Maria Meyer , Orlando Auciello , Alan R. Krauss
IPC分类号： C30B2304
CPC分类号： C30B33/00 , B81B3/0035 , C30B29/605
摘要： MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.
摘要翻译： MEMS结构以及由平均晶粒尺寸小于约10nm并具有小于约1微米的特征分辨率的超晶体金刚石膜制造它们的方法。通过使碳二聚物与在其上沉积有平均粒径小于约10nm的超微晶金刚石的表面上形成碳化物层的氧化物基底接触来制造MEMS结构。此后，使用微细加工工艺形成具有小于约1微米的特征分辨率的预定形状的结构。

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