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1. 发明授权

US06793849B1 N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom 有权
标题翻译：具有氮的纳米晶金刚石薄膜的N型滴下和由其制成的电极
公开(公告)号：US06793849B1
公开(公告)日：2004-09-21
申请号：US10398427
申请日：2003-12-12
申请人： Dieter M. Gruen , Alan R. Krauss , Orlando H. Auciello , John A. Carlisle
发明人： Dieter M. Gruen , Alan R. Krauss , Orlando H. Auciello , John A. Carlisle
IPC分类号： H01B104
CPC分类号： B82Y30/00 , C23C16/274 , C23C16/278 , C30B25/105 , C30B29/04 , C30B29/605 , H01B1/04
摘要： An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 1019 atoms/cm3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.
摘要翻译：公开了具有不小于10 19原子/ cm 3的氮的导电n型超微晶金刚石（UNCD）。制造n掺杂UNCD的方法。还公开了可预测地控制电导率的方法。

2. 发明授权

US5886459A Enhanced field emission from microtip structures 失效
标题翻译：从微尖端结构增强场发射
公开(公告)号：US5886459A
公开(公告)日：1999-03-23
申请号：US777936
申请日：1996-12-23
申请人： Orlando H. Auciello , Alan R. Krauss , Gary E. McGuire , Dieter M. Gruen
发明人： Orlando H. Auciello , Alan R. Krauss , Gary E. McGuire , Dieter M. Gruen
IPC分类号： H01J9/02
CPC分类号： H01J9/025 , H01J2201/30426
摘要： A method and system for manufacturing a field emission cathode having enhanced electron emission properties. The field emission cathode is prepared by providing a field emission substrate, an alkali metal alloy is formed at and below the exposed surface of the substrate, and a surface layer of alkali metal atoms are formed on the exposed surface by Gibbsian diffusion segregation action. If the monolayer, or surface layer, is desorbed, the diffusion action reestablishes the alkali metal surface layer thereby providing a stable alkali metal layer and enhanced electron emission characteristics.
摘要翻译：一种具有增强的电子发射特性的场致发射阴极的制造方法和系统。通过设置场致发射基板来制备场发射阴极，在基板的暴露表面和下面形成碱金属合金，通过吉布斯扩散分离作用在暴露的表面上形成碱金属原子的表面层。如果单层或表层被解吸，则扩散作用重新建立了碱金属表面层，从而提供稳定的碱金属层和增强的电子发射特性。

3. 发明申请

US20070220959A1 Novel ultrananocrystalline diamond probes for high-resolution low-wear nanolithographic techniques 审中-公开
标题翻译：用于高分辨率低磨损纳米光刻技术的新型超微晶金刚石探针
公开(公告)号：US20070220959A1
公开(公告)日：2007-09-27
申请号：US11542812
申请日：2006-10-04
申请人： Anirudha V. Sumant , Robert W. Carpick , Orlando H. Auciello , John A. Carlisle
发明人： Anirudha V. Sumant , Robert W. Carpick , Orlando H. Auciello , John A. Carlisle
IPC分类号： G01B5/28
CPC分类号： G01Q60/38 , G01Q70/14
摘要： A monolithically integrated 3-D membrane or diaphragm/tip (called 3-D tip) of substantially all UNCD having a tip with a radius of about less than 50 nm capable of measuring forces in all three dimensions or being used as single tips or in large arrays for imprint of data on memory media, fabrication of nanodots of different materials on different substrates and many other uses such as nanolithography production of nanodots of biomaterials on substrates, etc. A method of molding UNCD is disclosed including providing a substrate with a predetermined pattern and depositing an oxide layer prior to depositing a carbide-forming metallic seed layer, followed by seeding with diamond nano or micropowder in solvent suspension, or mechanically polishing with diamond powder, or any other seeding method, followed by UNCD film growth conforming to the predetermined pattern. Thereafter, one or more steps of masking and/or etching and/or coating and/or selective removal and/or patterning and/or electroforming and/or lapping and/or polishing are used in any combination to form the tip or probe.
摘要翻译：基本上所有UNCD具有半径约小于50nm的尖端的能够测量所有三维尺寸的力或用作单个尖端的基本上所有UNCD的单片集成的3-D膜或膜片/尖端（称为3-D尖端）用于记录介质上的数据压印的大型阵列，不同衬底上的不同材料的纳米点的制造以及许多其他用途，例如在衬底上的生物材料的纳米点的纳米光刻生产。公开了一种模制UNCD的方法，包括提供具有预定在沉积形成碳化物的金属种子层之前沉积氧化物层，然后在溶剂悬浮液中用金刚石纳米或微粉子接种，或用金刚石粉末机械抛光，或任何其他播种方法，随后是符合预定模式。此后，以任何组合使用掩蔽和/或蚀刻和/或涂覆和/或选择性去除和/或图案化和/或电铸和/或研磨和/或抛光的一个或多个步骤以形成尖端或探针。

4. 发明申请

US20120193685A1 RF-MEMS Capacitive Switches With High Reliability 有权
标题翻译： RF-MEMS电容开关具有高可靠性
公开(公告)号：US20120193685A1
公开(公告)日：2012-08-02
申请号：US13081683
申请日：2011-04-07
申请人： Charles L. Goldsmith , Orlando H. Auciello , John A. Carlisle , Suresh Sampath , Anirudha V. Sumant , Robert W. Carpick , James Hwang , Derrick C. Mancini , Chris Gudeman
发明人： Charles L. Goldsmith , Orlando H. Auciello , John A. Carlisle , Suresh Sampath , Anirudha V. Sumant , Robert W. Carpick , James Hwang , Derrick C. Mancini , Chris Gudeman
IPC分类号： H01L27/20 , H03K17/975 , B82Y15/00
CPC分类号： H03K17/975 , H01H59/0009
摘要： A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.
摘要翻译：可靠的长寿命的RF-MEMS电容开关设置有包括“快速放电金刚石介电层”的介电层，并能实现快速的开关恢复，电介质层充电和放电，这是有效和有效的，使RF-MEMS开关操作能够大于或等于1000亿次循环。

5. 发明授权

US08525185B2 RF-MEMS capacitive switches with high reliability 有权
标题翻译： RF-MEMS电容开关具有高可靠性
公开(公告)号：US08525185B2
公开(公告)日：2013-09-03
申请号：US13081683
申请日：2011-04-07
申请人： Charles L. Goldsmith , Orlando H. Auciello , John A. Carlisle , Suresh Sampath , Anirudha V. Sumant , Robert W. Carpick , James Hwang , Derrick C. Mancini , Chris Gudeman
发明人： Charles L. Goldsmith , Orlando H. Auciello , John A. Carlisle , Suresh Sampath , Anirudha V. Sumant , Robert W. Carpick , James Hwang , Derrick C. Mancini , Chris Gudeman
IPC分类号： G01L9/00
CPC分类号： H03K17/975 , H01H59/0009
摘要： A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.
摘要翻译：可靠的长寿命的RF-MEMS电容开关设置有包括“快速放电金刚石介电层”的介电层，并能实现快速的开关恢复，电介质层充电和放电，这是有效和有效的，使RF-MEMS开关操作能够大于或等于1000亿次循环。

6. 发明授权

US08834757B2 Method for making particle/polymer composites and applications 有权
标题翻译：制备颗粒/聚合物复合材料和应用的方法
公开(公告)号：US08834757B2
公开(公告)日：2014-09-16
申请号：US13250527
申请日：2011-09-30
申请人： Orlando H. Auciello , Pablo Gurman , Alejandro Berra
发明人： Orlando H. Auciello , Pablo Gurman , Alejandro Berra
IPC分类号： B32B3/02 , C08K3/04 , C04B35/64 , B32B27/06
CPC分类号： B32B3/02 , B32B27/06 , C04B35/64 , C08K3/02 , C08K3/04 , C08K3/08 , C08K2003/023 , C08K2003/0881 , Y10T428/23
摘要： The invention provides a method for producing bioinert biocompatible diamond particles/polymer composites or any other matrix (e.g. glass, metal, plastic, ceramic and more)/diamond particle composites, even if not biocompatible with outstanding mechanical, tribological, and biological properties, the method comprising selecting a polymer having a melting temperature below about 300 C; mixing diamond particles with the polymer to form a liquid mixture, poring the liquid diamond particle/polymer or any other diamond particle/matrix composite in liquid form into a mold and then causing the composite to sinter with the diamond particles densely and uniformly distributed through the bulk and surface of the composite, such that the diamond particles distributed on the surface can form a diamond layer covering the surface.
摘要翻译：本发明提供了用于生产生物惰性生物相容性金刚石颗粒/聚合物复合材料或任何其它基质（例如玻璃，金属，塑料，陶瓷和更多）/金刚石颗粒复合材料的方法，即使不是具有出色的机械，摩擦学和生物学特性的生物相容性，方法包括选择熔点低于约300℃的聚合物; 将金刚石颗粒与聚合物混合以形成液体混合物，将液体金刚石颗粒/聚合物或液体形式的任何其它金刚石颗粒/基质复合物浸入模具中，然后使复合材料与金刚石颗粒一起烧结，密度均匀地分布在复合物的体积和表面，使得分布在表面上的金刚石颗粒可以形成覆盖表面的金刚石层。

7. 发明授权

US08424175B2 Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory 有权
标题翻译：用于制造与铁电或相变介质集成的压电致动超晶体金刚石尖端阵列用于高密度存储器的工艺
公开(公告)号：US08424175B2
公开(公告)日：2013-04-23
申请号：US12556771
申请日：2009-09-10
申请人： Orlando H. Auciello
发明人： Orlando H. Auciello
IPC分类号： H04R17/10 , H04R31/00
CPC分类号： G11C11/22 , B82Y10/00 , G11C13/0004 , H01L27/20 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/144 , Y10T29/42 , Y10T29/49005 , Y10T29/49146 , Y10T29/49156
摘要： A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material is ultrananocrystalline diamond (UNCD), ta-C, or diamond-like carbon films; and forming an oxygen diffusion barrier layer by deposition of a TiAl, TaAl, or any other oxygen diffusion barrier layer material on the nanocarbon film.
摘要翻译：一种用于制造具有尖端阵列和存储介质的压电存储装置的方法，其包括但不限于：蚀刻硅晶片表面上的区域以通过各向异性蚀刻或用氢氧化钾进行化学蚀刻来产生基本上锥形的蚀刻坑（KOH）; 在硅晶片的顶表面上和在基本上锥形的蚀刻坑中生长氧化物层，以产生基本上锥形的蚀刻坑的氧化锐化; 通过沉积形成纳米结构碳材料的纳米碳膜的导电尖端阵列，其中纳米结构碳材料是超晶体金刚石（UNCD），ta-C或类金刚石碳膜; 以及通过在所述纳米碳膜上沉积TiAl，TaAl或任何其它氧扩散阻挡层材料形成氧扩散阻挡层。

8. 发明授权

US08343425B1 Multi-layer micro/nanofluid devices with bio-nanovalves 有权
标题翻译：具有生物纳米阀的多层微/纳流体装置
公开(公告)号：US08343425B1
公开(公告)日：2013-01-01
申请号：US12391486
申请日：2009-02-24
申请人： Hao Li , Leonidas E. Ocola , Orlando H. Auciello , Millicent A. Firestone
发明人： Hao Li , Leonidas E. Ocola , Orlando H. Auciello , Millicent A. Firestone
IPC分类号： B01L99/00
CPC分类号： B01F13/0061 , B01L3/50273 , B01L3/502738 , B01L2200/027 , B01L2300/0867 , B01L2300/0874 , B01L2300/0896 , B01L2400/0415 , B01L2400/0487 , B01L2400/0627 , B01L2400/0633 , F16K99/0003 , F16K99/0042 , F16K2099/0073 , Y10T137/206
摘要： A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.
摘要翻译：提供用户友好的多层微/纳流体流动装置和微/纳米制造工艺用于许多用途。多层微/纳流体流动装置可以包括：衬底，例如氧化铟锡涂层玻璃（ITO玻璃）; 铁电材料的导电层，优选地包括位于基底上的锆钛酸铅（PZT）的PZT层; 连接到导电层的电极; 定位在导电层上并限定纳米通道的纳米流体层; 位于纳米流体层上并限定微通道的微流体层; 和生物分子纳米阀提供可从关闭位置移动到打开位置的生物纳米阀，以控制纳米尺度的流体流动。

9. 发明授权

US5453661A Thin film ferroelectric flat panel display devices, and methods for operating and fabricating same 失效
标题翻译：薄膜铁电平板显示装置及其操作和制造方法
公开(公告)号：US5453661A
公开(公告)日：1995-09-26
申请号：US228116
申请日：1994-04-15
申请人： Orlando H. Auciello , Gary E. McGuire
发明人： Orlando H. Auciello , Gary E. McGuire
IPC分类号： H01J1/312 , H01J63/00 , H01J23/34
CPC分类号： B82Y10/00 , H01J1/312 , H01J63/00 , H01J2201/306 , H01J2329/00
摘要： A flat panel display includes a ferroelectric thin film between first and second spaced apart electrodes. The ferroelectric thin film emits electrons upon application of a predetermined voltage between the first and second spaced apart electrodes. The electrons are emitted in an electron emission path and impinge upon a luminescent layer such as a phosphor layer, which produces luminescence upon impingement upon the emitter electrodes. The ferroelectric thin film is preferably about 2 .mu.m or less in thickness and is preferably a polycrystalline ferroelectric thin film. More preferably, the thin ferroelectric film is a highly oriented, polycrystalline thin ferroelectric film. Most preferably, highly oriented ferroelectric thin film has a preferred (001) crystal orientation and is about 2 .mu.m or less in thickness. A flat panel display may be formed of arrays of such display elements. Top and bottom electrodes or side electrodes may be used. The display may be formed using conventional microelectronic fabrication steps.
摘要翻译：平板显示器包括在第一和第二间隔开的电极之间的铁电薄膜。铁电薄膜在第一和第二间隔开的电极之间施加预定电压时发射电子。电子在电子发射路径中发射并撞击在诸如荧光体层的发光层上，其在撞击发射极电极时产生发光。铁电薄膜的厚度优选为2μm以下，优选为多晶铁电薄膜。更优选地，薄铁电体膜是高取向多晶薄铁电体膜。最优选地，高取向铁电薄膜具有优选的（001）晶体取向，并且厚度为约2μm或更小。平板显示器可以由这种显示元件的阵列形成。可以使用顶部和底部电极或侧面电极。显示器可以使用常规的微电子制造步骤形成。

10. 发明授权

US09269519B2 Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches 有权
公开(公告)号：US09269519B2
公开(公告)日：2016-02-23
申请号：US14731830
申请日：2015-06-05
申请人： Anirudha V. Sumant , Orlando H. Auciello , Derrick C. Mancini
发明人： Anirudha V. Sumant , Orlando H. Auciello , Derrick C. Mancini
IPC分类号： H01L29/84 , H01H59/00 , H01L27/20 , H03K17/975
CPC分类号： H01H59/0009 , B82Y30/00 , B82Y40/00 , H01H2059/0081 , H01H2209/014 , H01H2209/046 , H01H2209/07 , H01H2239/004 , H01H2239/006 , H01L27/13 , H01L27/20 , H03K17/975 , Y10T29/49105
摘要： An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

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