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    • 1. 发明授权
    • Time-of-flight SIMS/MSRI reflectron mass analyzer and method
    • 飞行时间SIMS / MSRI反射体质量分析仪和方法
    • US06008491A
    • 1999-12-28
    • US953792
    • 1997-10-15
    • Vincent S. SmentkowskiDieter M. GruenAlan R. KraussJ. Albert SchultzJohn C. Holecek
    • Vincent S. SmentkowskiDieter M. GruenAlan R. KraussJ. Albert SchultzJohn C. Holecek
    • G01Q60/00H01J49/40H01J37/08B01D59/44H01J49/00
    • H01J49/405H01J2237/2527
    • A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSRI) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle .theta., where .theta. is the angle between the horizontal axis of the mass analyzer and the undeflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, .theta. is less than or equal to about 120.degree. and, more preferably, equal to 74.degree.. For positive ion analysis, the extractor, lens, and front ring of the reflectron are set at negative high voltages (-HV). The back ring of the reflectron is set at greater than about +700V for MSRI measurements and between the range of about +15 V and about +50V for SIMS measurements. The method further comprises inverting the polarity of the potentials applied to the extractor, lens, front ring, and back ring to obtain negative ion SIMS and/or MSRI data.
    • 提供了通过二次离子质谱(SIMS)和回收离子质谱(MSRI)分析样品的表面特性的方法和装置。 该方法包括通过离子束表面分析技术检测背散射的一次离子,低能量喷射物质和高能量喷射物质,包括以预定角度θ定位ToF SIMS / MSRI质量分析器,其中θ是水平轴 质量分析器和未偏转的一次离子束线,并向分析器的背环施加特定电压。 θ优选小于或等于约120°,更优选等于74°。 对于正离子分析,反射器的提取器,透镜和前环设置为负高电压(-HV)。 对于MSRI测量,反射镜的背环设置为大于约+ 700V,对于SIMS测量,反射镜的背环设置在大约+ 70V和约+ 50V的范围之间。 该方法还包括反转施加到提取器,透镜,前环和后环的电位的极性,以获得负离子SIMS和/或MSRI数据。
    • 2. 发明授权
    • Method for lubrication of diamond-like carbon surfaces
    • 类金刚石表面的润滑方法
    • US5698272A
    • 1997-12-16
    • US764392
    • 1996-12-11
    • Vincent S. SmentkowskiJohn T. Yates, Jr.
    • Vincent S. SmentkowskiJohn T. Yates, Jr.
    • B05D3/06B05D5/08C01B31/06C04B41/50C23C16/26C23C16/56G11B5/725G11B5/84
    • B05D3/06B05D5/08C01B31/065C04B41/5019C04B41/5093C23C16/26C23C16/56G11B5/725G11B5/8408
    • An improved method for the lubrication of diamond-like carbon surfaces comprises condensing a layer of perflourinated alkyl halides of the formula C.sub.n F.sub.2n+1 X, wherein n is a positive integer from 1 to 13 and X is selected from I, Br and Cl, on the diamond-like carbon surface. Perflourinated alkyl free radicals are then produced by photodecomposing C--X bonds of said perflourinated alkyl halides on the surface. The diamond-like carbon surface is reacted with photochemically produced perflourinated alkyl radicals thereby anchoring photochemically induced photofragments of the perflourinated alkyl halides to the surface forming a perflourinated alkyl layer. The perfluorinated alkyl layer is preferably decomposed on the diamond-like carbon surface to cause the fluorination of the surface by atomic F. The method preferably achieves greater than one fluorine atom per surface carbon atom chemisorbed on the diamond-like carbon. The fluorination process produces lubricated diamond-like carbon surfaces that are particularly suitable for computer hard disks.
    • 用于润滑类金刚石碳表面的改进方法包括将式CnF2n + 1X的全氟化烷基卤化物层,其中n是1至13的正整数,X选自I,Br和Cl, 类金刚石表面。 然后通过在所述表面上光刻分解所述全氟化烷基卤化物的C-X键来产生经过饱和的烷基自由基。 将类金刚石碳表面与光化学产生的全氟化烷基反应,从而将全氟化烷基卤化物的光化学诱导的光片锚定到形成全氟化烷基层的表面。 全氟化烷基层优选在类金刚石碳表面上分解,以通过原子F使表面氟化。该方法优选在金刚石状碳上化学吸附表面碳原子上大于一个氟原子。 氟化过程产生特别适用于计算机硬盘的润滑的类金刚石碳表面。
    • 5. 发明授权
    • Method for fluorination of diamond surfaces and associated product
    • 金刚石表面及相关产品的氟化方法
    • US5840426A
    • 1998-11-24
    • US798311
    • 1997-02-07
    • Vincent S. SmentkowskiJohn T. Yates, Jr.
    • Vincent S. SmentkowskiJohn T. Yates, Jr.
    • B05D3/06B05D5/08C01B31/06C04B41/50C23C16/26C23C16/56G11B5/725G11B5/84B32B9/00
    • C23C16/26B05D3/06B05D5/08C01B31/065C04B41/5019C04B41/5093C23C16/56G11B5/725G11B5/8408Y10T428/30
    • An improved method for the fluorination of a diamond surfaces comprises condensing a layer of perfluorinated alkyl iodides consisting of C.sub.n F.sub.2n+1 I (where n is a positive integer from 1 to 13) on the diamond surface, producing perfluorinated alkyl free radicals by photodecomposing C--I bonds of said perfluorinated alkyl iodides on the diamond surface, reacting the diamond surface with photochemically produced perfluorinated alkyl radicals thereby anchoring photochemically induced photofragments of the perfluorinated alkyl iodides to the diamond surface forming a perfluorinated alkyl layer, and decomposing the perfluorinated alkyl layer on the diamond surface to cause the fluorination of the diamond surface by atomic F. The method achieves greater than one fluorine atom per surface carbon atom chemisorbed on the diamond using C.sub.4 F.sub.9 I. A fluorinated diamond made by the above method is also disclosed wherein a fluorinating perfluoroalkyl iodide, C.sub.n F.sub.2n+1 I, is selected from the group consisting of n=1 to 5. In one case, the fluorinating perfluoroalkyl iodide is C.sub.4 F.sub.9 I. In another case, it is CF.sub.3 I.
    • 用于金刚石表面氟化的改进方法包括将由CnF2n + 1I(其中n为1至13的正整数)组成的全氟化烷基碘层凝集在金刚石表面上,通过光致分解CI键来产生全氟化烷基自由基 所述金刚石表面上的全氟化烷基碘化物使金刚石表面与光化学产生的全氟化烷基反应,从而将全氟化烷基碘化物的光化学诱导的光致斑片锚定到形成全氟化烷基层的金刚石表面,并将金刚石表面上的全氟化烷基层分解成 导致金刚石表面被原子F氟化。该方法使用C4F9I在金刚石上化学吸附表面碳原子上大于一个氟原子。 还公开了通过上述方法制备的氟化金刚石,其中氟化全氟烷基碘CnF2n + 1I选自n = 1至5.在一种情况下,氟化全氟烷基碘为C 4 F 9 I。 在另一种情况下,它是CF3I。