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1. 发明授权

US06811612B2 Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices 有权
标题翻译：用于MEMS和其他器件的金刚石微结构的纳米晶金刚石膜的图案化
公开(公告)号：US06811612B2
公开(公告)日：2004-11-02
申请号：US10169879
申请日：2002-11-08
申请人： Dieter M. Gruen , Hans-Gerd Busmann , Eva-Maria Meyer , Orlando Auciello , Alan R. Krauss
发明人： Dieter M. Gruen , Hans-Gerd Busmann , Eva-Maria Meyer , Orlando Auciello , Alan R. Krauss
IPC分类号： C30B2304
CPC分类号： C30B33/00 , B81B3/0035 , C30B29/605
摘要： MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.
摘要翻译： MEMS结构以及由平均晶粒尺寸小于约10nm并具有小于约1微米的特征分辨率的超晶体金刚石膜制造它们的方法。通过使碳二聚物与在其上沉积有平均粒径小于约10nm的超微晶金刚石的表面上形成碳化物层的氧化物基底接触来制造MEMS结构。此后，使用微细加工工艺形成具有小于约1微米的特征分辨率的预定形状的结构。

2. 发明授权

US06613601B1 Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor 有权
标题翻译：超晶体金刚石悬臂宽动态范围加速/振动/压力传感器
公开(公告)号：US06613601B1
公开(公告)日：2003-09-02
申请号：US10142814
申请日：2002-05-09
申请人： Alan R. Krauss , Dieter M. Gruen , Michael J. Pellin , Orlando Auciello
发明人： Alan R. Krauss , Dieter M. Gruen , Michael J. Pellin , Orlando Auciello
IPC分类号： H01L2100
CPC分类号： G01H9/00 , B82Y35/00 , G01D5/30 , G01H11/06 , G01L1/005 , G01L1/044 , G01P15/0888 , G01P15/0894 , G01P15/093 , Y10S977/732 , Y10S977/932
摘要： An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/V2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.
摘要翻译：在一个高灵敏度的超小型传感器中，采用悬臂结构形成的超微晶金刚石（UNCD）元件用于在宽动态范围内测量加速度，冲击，振动和静压力。悬臂UNCD元件可以与单个阳极组合使用，测量光学或电容测量。在另一个实施例中，悬臂UNCD元件设置在两个阳极之间，其中DC电压施加到两个阳极。通过施加到UNCD悬臂元件上的小的AC调制电压，并且由于Fowler-Nordheim方程中所施加的电压和阳极 - 阴极间隙距离的对称性，维持指定的所需的阳极电压比V1 / V2的任何变化电流比精确匹配UNCD悬臂元件的任何位移与平衡。通过测量维持指定电流比所需的阳极电压比的变化，可以精确地确定UNCD悬臂的偏转。通过适当地调制在UNCD悬臂与两个阳极之间施加的电压或极限电极，可以精确地独立测量压力，单轴加速度，振动和冲击。本发明还考虑了用于制造用于传感器的悬臂UNCD结构的方法。

3. 发明授权

US06447851B1 Field emission from bias-grown diamond thin films in a microwave plasma 失效
标题翻译：微波等离子体中偏置生长金刚石薄膜的场发射
公开(公告)号：US06447851B1
公开(公告)日：2002-09-10
申请号：US09352063
申请日：1999-07-14
申请人： Dieter M. Gruen , Alan R. Krauss , Ming Q. Ding , Orlando Auciello
发明人： Dieter M. Gruen , Alan R. Krauss , Ming Q. Ding , Orlando Auciello
IPC分类号： H05H124
CPC分类号： C23C16/274 , C23C16/26 , C23C16/279 , H01J9/025 , Y10S427/104
摘要： A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between −100V and −200 are preferred. Carbon sources may be one or more of CH4, C2H2 other hydrocarbons and fullerenes.
摘要翻译：一种制造金刚石或类金刚石膜的方法，其中在微波等离子体化学气相沉积系统中在具有导电表面的基板上建立负偏压。经受微波能量的气氛包括碳源，氮气和氢气。通过膜的成核和生长阶段，在衬底上保持负偏压，直到膜是连续的。 -100V至-200之间的偏压是优选的。碳源可以是CH4，C2H2其他烃和富勒烯中的一种或多种。

4. 发明授权

US06422077B1 Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor 有权
标题翻译：超晶体金刚石悬臂宽动态范围加速/振动/压力传感器
公开(公告)号：US06422077B1
公开(公告)日：2002-07-23
申请号：US09543992
申请日：2000-04-06
申请人： Alan R. Krauss , Dieter M. Gruen , Michael J. Pellin , Orlando Auciello
发明人： Alan R. Krauss , Dieter M. Gruen , Michael J. Pellin , Orlando Auciello
IPC分类号： G01P1508
CPC分类号： G01H9/00 , B82Y35/00 , G01D5/30 , G01H11/06 , G01L1/005 , G01L1/044 , G01P15/0888 , G01P15/0894 , G01P15/093 , Y10S977/732 , Y10S977/932
摘要： An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/N2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.
摘要翻译：在一个高灵敏度的超小型传感器中，采用悬臂结构形成的超微晶金刚石（UNCD）元件用于在宽动态范围内测量加速度，冲击，振动和静压力。悬臂UNCD元件可以与单个阳极组合使用，测量光学或电容测量。在另一个实施例中，悬臂UNCD元件设置在两个阳极之间，其中DC电压施加到两个阳极。通过施加到UNCD悬臂元件的小的AC调制电压，并且由于Fowler-Nordheim方程中施加的电压和阳极 - 阴极间隙距离的对称性，维持指定的阳极电压比V1 / N2的任何变化电流比精确匹配UNCD悬臂元件的任何位移与平衡。通过测量维持指定电流比所需的阳极电压比的变化，可以精确地确定UNCD悬臂的偏转。通过适当地调制在UNCD悬臂与两个阳极之间施加的电压或极限电极，可以精确地独立测量压力，单轴加速度，振动和冲击。本发明还考虑了用于制造用于传感器的悬臂UNCD结构的方法。

5. 发明授权

US07556982B2 Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates 有权
标题翻译：在低温和高沉积速率下生长纯纳米晶金刚石薄膜的方法
公开(公告)号：US07556982B2
公开(公告)日：2009-07-07
申请号：US10892736
申请日：2004-07-15
申请人： John A. Carlisle , Dieter M. Gruen , Orlando Auciello , Xingcheng Xiao
发明人： John A. Carlisle , Dieter M. Gruen , Orlando Auciello , Xingcheng Xiao
IPC分类号： H01L21/00
CPC分类号： C23C16/274 , C23C16/277 , Y10T428/30
摘要： A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 1010sites/cm2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500° C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500° C.-4 hours or less onto a variety of substrates such as MEMS devices.
摘要翻译：在衬底温度小于约500℃下以不小于约0.2微米/小时的速度在衬底上沉积纳米晶金刚石膜的方法。该方法包括将纳米晶体金刚石粉末的衬底表面接种到不是小于约1010sites / cm2，并且使接种的底物表面与约99体积％的除氦之外的惰性气体和约1体积％的甲烷或氢气以及一种或多种乙炔，富勒烯和蒽的惰性气体接触微波诱导的等离子体的存在，同时保持衬底温度低于约500℃，以不小于约0.2微米/小时的速率将纳米晶体金刚石沉积在接种的衬底表面上。平均粒径小于约20纳米的纳米晶体金刚石的涂层可以以500℃-4小时以下的热预算沉积到诸如MEMS器件的各种基板上。

6. 发明授权

US4923585A Sputter deposition for multi-component thin films 失效
标题翻译：多组分薄膜的溅射沉积
公开(公告)号：US4923585A
公开(公告)日：1990-05-08
申请号：US266196
申请日：1988-11-02
申请人： Alan R. Krauss , Orlando Auciello
发明人： Alan R. Krauss , Orlando Auciello
IPC分类号： C23C14/04 , C23C14/46 , C23C14/54
CPC分类号： C23C14/54 , C23C14/042 , C23C14/46 , Y10S505/786
摘要： Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.
摘要翻译：使用单个离子束和多组分靶的离子束溅射诱导沉积能够可再现地产生任意组成的薄膜，包括接近化学计量的薄膜。该溅射沉积方法使用石英晶体沉积监测器和计算机控制的聚焦良好的离子束，能够生产超晶格型金属氧化物超导体和半导体，例如GaAs-AlGaAs以及层状金属/氧化物/半导体/ 超导体结构。通过根据已知的溅射产率和每种材料的所需层厚来编程每个靶的停留时间，可以将来自良好控制的亚单层的复合膜沉积到仅由可用的沉积时间确定的厚度。在一个实施例中，离子束通过一组X-Y静电偏转板顺序指向三个或更多个不同元素或化合物靶，其是所需膜的成分。在另一个实施例中，离子束被引导通过沉积板中的孔，并在计算机控制下移位，以提供对沉积层的高度控制。在另一个实施例中，单个固定离子束以顺序方式被引导到多个溅射靶上，其中目标在计算机控制下各自与光束对准地移动以形成多层薄膜。这种受控的溅射沉积方法也可以与激光和电子束一起使用。

7. 发明申请

US20130225906A1 MATERIAL FOR MEDICAL USE COMPRISING NANOPARTICLES WITH SUPERPARAMAGNETIC PROPERTIES AND ITS UTILIZATION IN SURGERY 有权
标题翻译：医疗用途包含纳米颗粒超临界特性的材料及其在手术中的应用
公开(公告)号：US20130225906A1
公开(公告)日：2013-08-29
申请号：US13825176
申请日：2011-09-09
申请人： Roberto Zysler , Alejandro Berra , Pablo Gurman , Orlando Auciello , Mario Joaquin Saravia
发明人： Roberto Zysler , Alejandro Berra , Pablo Gurman , Orlando Auciello , Mario Joaquin Saravia
IPC分类号： A61F9/007
CPC分类号： A61F9/007 , A61F9/00727 , A61K9/0048 , A61K9/0051 , A61K9/5094 , A61K9/5115 , A61K9/5146 , A61L27/042 , A61L27/54 , A61L2300/44 , A61L2400/06 , A61L2400/12 , A61L2430/16
摘要： This invention relates to a material for medical use that comprises biocompatible nanoparticles having superparamagnetic properties, where the superparamagnetic properties of said nanoparticles are used to localize their action on a determined space or tissue. In particular, said nanoparticles having superparamagnetic properties are composed of magnetite. The material according to the invention has various applications, both in surgical and in therapeutic treatments.
摘要翻译：本发明涉及用于医疗用途的材料，其包含具有超顺磁性质的生物相容性纳米颗粒，其中所述纳米颗粒的超顺磁性质用于在其确定的空间或组织上定位其作用。特别地，具有超顺磁特性的所述纳米颗粒由磁铁矿构成。根据本发明的材料在外科和治疗方面都有各种应用。

8. 发明申请

US20050031785A1 Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates 有权
标题翻译：在低温和高沉积速率下生长纯纳米晶金刚石薄膜的方法
公开(公告)号：US20050031785A1
公开(公告)日：2005-02-10
申请号：US10892736
申请日：2004-07-15
申请人： John Carlisle , Dieter Gruen , Orlando Auciello , Xingcheng Xiao
发明人： John Carlisle , Dieter Gruen , Orlando Auciello , Xingcheng Xiao
IPC分类号： C23C16/27 , C23C16/00 , B32B9/00
CPC分类号： C23C16/274 , C23C16/277 , Y10T428/30
摘要： A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 1010sites/cm2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500° C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500° C.-4 hours or less onto a variety of substrates such as MEMS devices.
摘要翻译：在衬底温度小于约500℃下以不小于约0.2微米/小时的速度在衬底上沉积纳米晶金刚石膜的方法。该方法包括将纳米晶体金刚石粉末的衬底表面接种到不是小于约10 <10个位点/ cm 2，并且使接种的底物表面与约99体积％的除氦和约1体积％的甲烷或氢气之外的惰性气体和一个或多个的乙炔，富勒烯和蒽在微波诱导的等离子体的存在下，同时保持衬底温度低于约500℃，以便以不小于约0.2微米/小时的速率将纳米晶体金刚石沉积在接种的衬底表面上。平均粒径小于约20纳米的纳米晶体金刚石的涂层可以以500℃-4小时以下的热预算沉积到诸如MEMS器件的各种基板上。

9. 发明申请

US20080246368A1 Integration of dissimilar materials for advanced multfunctional devices 有权
标题翻译：集成不同材质的高级多功能设备
公开(公告)号：US20080246368A1
公开(公告)日：2008-10-09
申请号：US11607581
申请日：2006-11-30
申请人： Orlando Auciello , John Carlisle , Jennifer Gerbi , James Birrell
发明人： Orlando Auciello , John Carlisle , Jennifer Gerbi , James Birrell
IPC分类号： H01L41/00 , H01L29/04 , H01L21/316
CPC分类号： C23C28/343 , B82Y10/00 , B82Y30/00 , C23C14/024 , C23C14/08 , C23C16/0272 , C23C16/40 , C23C28/321 , C23C28/322 , C23C28/341 , C23C28/345 , C23C28/3455 , C23C28/36 , G01N33/5438 , G01N33/551 , H01L21/0425 , H01L21/3146 , H01L28/60 , H01L41/094 , H03H9/2452
摘要： A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.
摘要翻译：包括具有含氧材料的层状异质结构的装置，具有保护碳层免受氧气蚀刻的碳层和无定形氧扩散阻挡层的装置。金属，碳化物或氧化物中的一种或多种可以与在器件中具有最低的氧化物形成自由能的无定形氧扩散阻挡层接触。各种装置被公开为碳同素异形体的品种。还公开了在诸如器件制造的工艺中从氧蚀刻保护碳如金刚石的方法。

10. 发明授权

US07128889B2 Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries 有权
公开(公告)号：US07128889B2
公开(公告)日：2006-10-31
申请号：US10845867
申请日：2004-05-13
申请人： John A. Carlisle , Orlando Auciello , James Birrell
发明人： John A. Carlisle , Orlando Auciello , James Birrell
IPC分类号： C01B31/06
CPC分类号： C23C16/274 , C23C16/277 , C23C16/279
摘要： An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm.A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

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