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1. 发明申请

US20140284753A1 Thermal Air Flow Sensor 有权
标题翻译：热空气流量传感器
公开(公告)号：US20140284753A1
公开(公告)日：2014-09-25
申请号：US14355104
申请日：2011-11-28
申请人： Norio Ishitsuka , Keiji Hanzawa , Yasuo Onose , Noriyuki Sakuma
发明人： Norio Ishitsuka , Keiji Hanzawa , Yasuo Onose , Noriyuki Sakuma
IPC分类号： G01F1/69
CPC分类号： G01F1/69 , G01F1/692
摘要： A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure.
摘要翻译：提供了产生较少测量误差的热空气流量传感器。热空气流量传感器包括：半导体衬底; 加热电阻器，电阻温度检测器和包括氧化硅膜的电绝缘体，其中在半导体衬底上形成有加热电阻器，电阻温度检测器和电绝缘体; 以及通过去除半导体衬底的一部分而形成的膜片部分。加热电阻器和电阻温度检测器形成在隔膜部分上。热空气流量传感器还包括形成为加热电阻器上方的电绝缘体的电阻温度检测器的氮化硅膜。氮化硅膜具有符合加热电阻器和电阻温度检测器的图案的步骤。氮化硅膜具有多层结构。

2. 发明授权

US09766106B2 Thermal air flow sensor 有权
公开(公告)号：US09766106B2
公开(公告)日：2017-09-19
申请号：US14355104
申请日：2011-11-28
申请人： Norio Ishitsuka , Keiji Hanzawa , Yasuo Onose , Noriyuki Sakuma
发明人： Norio Ishitsuka , Keiji Hanzawa , Yasuo Onose , Noriyuki Sakuma
IPC分类号： G01F1/692 , G01F1/69
CPC分类号： G01F1/69 , G01F1/692
摘要： A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure.

3. 发明授权

US08723287B2 Thermal airlflow sensor 有权
标题翻译：热气流传感器
公开(公告)号：US08723287B2
公开(公告)日：2014-05-13
申请号：US13810814
申请日：2011-07-06
申请人： Norio Ishitsuka , Rintaro Minamitani , Keiji Hanzawa
发明人： Norio Ishitsuka , Rintaro Minamitani , Keiji Hanzawa
IPC分类号： H01L31/058
CPC分类号： H01L37/00 , B81C1/00793 , G01F1/6845 , G01F1/692
摘要： An object of the present invention is to provide a thermal airflow sensor that prevents moisture absorption by a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), and that reduces a measuring error. In order to attain the foregoing object, the thermal airflow sensor according to the present invention applies an ion implantation to a silicon oxide film 4, formed closest to a surface (formed to be located on an uppermost portion), by using an atom or molecule selected from at least any one of silicon, oxygen, and an inert element such as argon or nitrogen, in order to increase a concentration of an atom contained in the silicon oxide film 4 more than that before the ion implantation.
摘要翻译：本发明的目的是提供一种热气流传感器，其防止由最靠近表面（形成在最上部的部分）形成的氧化硅膜吸湿，并且减少了测量误差。为了实现上述目的，根据本发明的热气流传感器通过使用原子或分子将离子注入施加到最靠近表面（形成在最上部）的氧化硅膜4上选自硅，氧和惰性元素如氩或氮中的至少一种，以便增加氧化硅膜4中包含的原子的浓度比离子注入之前的浓度更高。

4. 发明申请

US20130119504A1 Thermal Airlflow Sensor 有权
标题翻译：热气流传感器
公开(公告)号：US20130119504A1
公开(公告)日：2013-05-16
申请号：US13810814
申请日：2011-07-06
申请人： Norio Ishitsuka , Rintaro Minamitani , Keiji Hanzawa
发明人： Norio Ishitsuka , Rintaro Minamitani , Keiji Hanzawa
IPC分类号： H01L37/00
CPC分类号： H01L37/00 , B81C1/00793 , G01F1/6845 , G01F1/692
摘要： An object of the present invention is to provide a thermal airflow sensor that prevents moisture absorption by a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), and that reduces a measuring error. In order to attain the foregoing object, the thermal airflow sensor according to the present invention applies an ion implantation to a silicon oxide film 4, formed closest to a surface (formed to be located on an uppermost portion), by using an atom or molecule selected from at least any one of silicon, oxygen, and an inert element such as argon or nitrogen, in order to increase a concentration of an atom contained in the silicon oxide film 4 more than that before the ion implantation.
摘要翻译：本发明的目的是提供一种热气流传感器，其防止由最靠近表面（形成在最上部的部分）形成的氧化硅膜吸湿，并且减少了测量误差。为了实现上述目的，根据本发明的热气流传感器通过使用原子或分子将离子注入施加到最靠近表面（形成在最上部）的氧化硅膜4上选自硅，氧和惰性元素如氩或氮中的至少一种，以便增加氧化硅膜4中包含的原子的浓度比离子注入之前的浓度更高。

5. 发明申请

US20050196935A1 Semiconductor device and process for producing the same 有权
公开(公告)号：US20050196935A1
公开(公告)日：2005-09-08
申请号：US11108827
申请日：2005-04-19
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

6. 发明授权

US06881646B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06881646B2
公开(公告)日：2005-04-19
申请号：US10392916
申请日：2003-03-21
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤。通过减小半导体衬底上的元件隔离槽的槽上边缘周围的应力产生，从而优化元件隔离槽的形状并使器件更精细并提高器件电气特性来制造器件。

7. 发明申请

US20050079667A1 Semiconductor device and production method therefor 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050079667A1
公开(公告)日：2005-04-14
申请号：US10503350
申请日：2003-02-05
申请人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
发明人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8244 , H01L21/8247 , H01L27/11 , H01L27/115 , H01L29/49 , H01L29/78 , H01L29/788 , H01L29/792 , H01L21/425 , H01L21/8234 , H01L21/8238 , H01L29/76 , H01L29/94
CPC分类号： H01L29/6659 , H01L21/26513 , H01L29/4925 , H01L29/4983 , H01L29/7833
摘要： A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026 atoms/m3 or more and 1027 atoms/m3 or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.
摘要翻译：提供了具有高可靠性的半导体器件。本发明的第二个目的是提供一种高产率的半导体器件。半导体包括硅衬底，形成在硅衬底的一个主表面上的栅极电介质膜，通过层叠在栅极电介质膜上形成的栅电极和含有砷和磷的扩散层。砷的最高浓度部分的浓度和磷的最高浓度部分的浓度分别为10 26个/ m 3以上且10 27个/ m 3以下，并且来自硅衬底的表面的磷的最高浓度部分的深度小于砷的最高浓度部分的深度。

8. 发明授权

US06348396B1 Semiconductor device and production thereof 失效
标题翻译：半导体器件及其制造
公开(公告)号：US06348396B1
公开(公告)日：2002-02-19
申请号：US09702786
申请日：2000-11-01
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Yasuko Yoshida
IPC分类号： H01L2176
CPC分类号： H01L21/76232
摘要： A semiconductor device having a SGI structure produced by selecting D, T and R values for satisfying the formula: D
摘要翻译：具有SGI结构的半导体器件通过选择满足下式的D，T和R值产生：其中D是元件形成区域的宽度，T是以微米为单位的槽的热氧化量，R是在槽的端部底部的曲率半径具有优异的性能，例如在硅衬底中的凹槽底部产生的应力减小，并且不产生异常结漏电流。

9. 发明授权

US07674668B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07674668B2
公开(公告)日：2010-03-09
申请号：US12005444
申请日：2007-12-26
申请人： Norio Ishitsuka , Nobuyoshi Hattori , Tomio Iwasaki
发明人： Norio Ishitsuka , Nobuyoshi Hattori , Tomio Iwasaki
IPC分类号： H01L21/336 , H01L21/265
CPC分类号： H01L21/26506 , H01L21/26513 , H01L29/6653 , H01L29/6656 , H01L29/6659
摘要： After a gate electrode is formed on a main surface of a semiconductor substrate, low concentration layers are formed on the main surface of the semiconductor substrate by implanting impurities therein, with using the gate electrode as a mask. Thereafter, first sidewalls and second sidewalls are formed on the both side surfaces of the gate electrode. Subsequently, nitrogen or the like is ion-implanted into the semiconductor substrate, with using the first sidewalls, the second sidewalls and the gate electrode as a mask, thereby forming a crystallization-control region (CCR) on the main surface of the semiconductor substrate. Then, after the second sidewalls are removed, high concentration layers for a source and a drain are formed on the main surface of the semiconductor substrate.
摘要翻译：在半导体衬底的主表面上形成栅电极之后，通过使用栅电极作为掩模，在半导体衬底的主表面上注入杂质，形成低浓度层。此后，在栅电极的两个侧表面上形成第一侧壁和第二侧壁。随后，使用第一侧壁，第二侧壁和栅电极作为掩模，将氮等离子注入到半导体衬底中，从而在半导体衬底的主表面上形成结晶化控制区域（CCR）。然后，在去除第二侧壁之后，在半导体衬底的主表面上形成用于源极和漏极的高浓度层。

10. 发明申请

US20090029524A1 METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A TRENCH 审中-公开
标题翻译：制造具有TRENCH的半导体集成电路装置的方法
公开(公告)号：US20090029524A1
公开(公告)日：2009-01-29
申请号：US12244621
申请日：2008-10-02
申请人： Kenji KANAMITSU , Kouzou Watanabe , Norio Suzuki , Norio Ishitsuka
发明人： Kenji KANAMITSU , Kouzou Watanabe , Norio Suzuki , Norio Ishitsuka
IPC分类号： H01L21/762
CPC分类号： H01L21/823878 , H01L21/28061 , H01L21/76232 , H01L21/823481 , H01L27/10814 , H01L27/10855 , H01L27/10873 , H01L29/4941 , H01L29/6659
摘要： A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.
摘要翻译：一种半导体集成电路器件及其制造方法。由元件隔离沟槽围绕的有源区的基板的表面在有源区的中心部分水平平坦，但是朝向有源区的肩部中的元件隔离沟的侧壁落下。该倾斜面包含两个具有不同倾斜角的倾斜面。有源区的中心部附近的第一倾斜面比较陡，元件隔离沟的侧壁附近的第二倾斜面比第一倾斜面更平缓。有源区的肩部中的基板的表面完全是圆形的，并且没有角部。

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