专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4857769A Threshold voltage fluctuation compensation circuit for FETS 失效
标题翻译： FETS的阈值电压波动补偿电路
公开(公告)号：US4857769A
公开(公告)日：1989-08-15
申请号：US143385
申请日：1988-01-13
申请人： Nobuo Kotera , Kiichi Yamashita , Taizo Kinoshita , Hirotoshi Tanaka , Satoshi Tanaka , Minoru Nagata
发明人： Nobuo Kotera , Kiichi Yamashita , Taizo Kinoshita , Hirotoshi Tanaka , Satoshi Tanaka , Minoru Nagata
IPC分类号： H03K19/003
CPC分类号： H03K19/00384
摘要： This invention relates to a threshold voltage detection circuit for detecting the threshold voltage of field effect transistors (FETs) and to a semiconductor circuit capable of a stable operation irrespective of the fluctuation of the threshold voltage by utilizing this threshold voltage detection circuit. The source-drain path of first FET is connected in series with that of second FET having substantially the same threshold voltage as that of the first FET and the conductances of these first and second FETs are set to a predetermined ratio to generate a voltage drop associated with the threshold voltage in the first FET. This voltage drop can be used for detecting the threshold voltage and for level-shifting. The output of the series connection of the first and second FETs is applied to the gate of a constant current FET having the same threshold voltage as that of the first and second FETs and the drain current of the constant current FET can thus be set irrespective of the fluctuation of the threshold voltage.
摘要翻译：本发明涉及一种阈值电压检测电路，用于通过利用该阈值电压检测电路来检测场效应晶体管（FET）的阈值电压和能够稳定工作的半导体电路，而与阈值电压的波动无关。第一FET的源极 - 漏极路径与具有与第一FET基本相同的阈值电压的第二FET的源极 - 漏极路径串联连接，并且将这些第一和第二FET的电导设置为预定的比率以产生相关的电压降与第一FET中的阈值电压。该电压降可用于检测阈值电压和电平转换。第一和第二FET的串联连接的输出被施加到具有与第一和第二FET相同的阈值电压的恒流FET的栅极，因此可以设定恒定电流FET的漏极电流，而不管阈值电压的波动。

2. 发明授权

US4847550A Semiconductor circuit 失效
标题翻译：半导体电路
公开(公告)号：US4847550A
公开(公告)日：1989-07-11
申请号：US143802
申请日：1988-01-14
申请人： Satoshi Tanaka , Hirotoshi Tanaka , Taizo Kinoshita , Nobuo Kotera , Minoru Nagata , Kiichi Yamashita , Tomoyuki Watanabe
发明人： Satoshi Tanaka , Hirotoshi Tanaka , Taizo Kinoshita , Nobuo Kotera , Minoru Nagata , Kiichi Yamashita , Tomoyuki Watanabe
IPC分类号： G05F3/24
CPC分类号： G05F3/245 , G05F3/247
摘要： A constant voltage circuit according to this invention comprises first means attenuating or dividing fluctuating voltage and an amplifying FET, to the gate of which the output attenuated or divided by the first means is applied and whose drain is connected with the fluctuating voltage through load means. The attenuation ratio or division ratio of the first means, the mutual conductance of the amplifying FET and the impedance of the load means are so set that the voltage drop across the load means cancels the fluctuating amount of the fluctuating voltage. Consequently an output voltage, which is maintained substantially constant, is obtained at the drain of the amplifying FET, independently of fluctuations in the fluctuating voltage, and thus a constant voltage circuit can be obtained. A constant current circuit according to this invention utilizes the constant voltage circuit described above. The output voltage of the constant voltage circuit is supplied to the gate of the constant current FET. Consequently a current, which is maintained substantially constant, flows through the drain-source path of this constant current FET and thus a constant current circuit can be obtained.

3. 发明授权

US5166553A Current mirror circuit employing depletion mode FETs 失效
标题翻译：采用耗尽型FET的电流镜电路
公开(公告)号：US5166553A
公开(公告)日：1992-11-24
申请号：US364461
申请日：1989-06-12
申请人： Nobuo Kotera , Kiichi Yamashita , Hirotoshi Tanaka , Satoshi Tanaka , Yasushi Hatta , Minoru Nagata
发明人： Nobuo Kotera , Kiichi Yamashita , Hirotoshi Tanaka , Satoshi Tanaka , Yasushi Hatta , Minoru Nagata
IPC分类号： G05F3/24 , G05F3/26 , H03F3/34 , H03F3/343 , H03F3/347 , H03K17/14
CPC分类号： H03K17/145 , G05F3/262
摘要： A semiconductor circuit including first and second FET's for delivering an output signal without being affected by a change in threshold voltage of the FET's is disclosed. According to one practical form of the semiconductor circuit, the drain-source current path of an additional FET whose gate and source are shorted to each other, is connected in parallel to the drain-source current path of the first FET whose gate and drain are shorted to each other, to make the voltage-current characteristic of the second FET agree with that of the parallel combination of the first and additional FET's. According to another practical form of the semiconductor circuit, a voltage dividing circuit is connected in parallel to the drain-source current path of the first FET, and a divided output voltage from the voltage dividing circuit is applied between the gate and source of each of the first and second FET's.
摘要翻译：公开了一种包括用于传递输出信号而不受FET的阈值电压变化影响的第一和第二FET的半导体电路。根据半导体电路的一种实际形式，其栅极和源极彼此短路的附加FET的漏极 - 源极电流路径并联连接到栅极和漏极的第一FET的漏极 - 源极电流路径使第二FET的电压 - 电流特性与第一和另外的FET的并联组合一致。根据半导体电路的另一种实际形式，分压电路并联连接到第一FET的漏极 - 源极电流路径，并且来自分压电路的分压输出电压施加在每个的栅极和源极之间第一和第二FET。

4. 发明授权

US4968904A MESFET circuit with threshold-compensated source-follower output 失效
标题翻译：具有阈值补偿源跟随器输出的MESFET电路
公开(公告)号：US4968904A
公开(公告)日：1990-11-06
申请号：US323947
申请日：1989-03-15
申请人： Kiichi Yamashita , Keiichi Kitamura , Nobuo Kotera , Yasushi Hatta , Hiroyuki Tanaka
发明人： Kiichi Yamashita , Keiichi Kitamura , Nobuo Kotera , Yasushi Hatta , Hiroyuki Tanaka
IPC分类号： H03K19/0952 , H01L27/095 , H03K19/003 , H03K19/094
CPC分类号： H03K19/00384 , H03K19/09436
摘要： A logic circuit made up of FET's is disclosed in which an output interface circuit is formed of a source follower circuit including a signal transmitting FET and a constant-current supplying FET, and a ratio of the gate width of the signal transmitting FET to the gate width of the constant-current supplying FET is set so that the high and low levels of the output signal of the logic circuit are independent of the threshold voltage of the FET's.
摘要翻译：公开了一种由FET构成的逻辑电路，其中输出接口电路由包括信号发送FET和恒流供应FET的源极跟随器电路以及信号发送FET的栅极宽度与栅极的比率设定恒流供给FET的宽度，使得逻辑电路的输出信号的高电平和低电平独立于FET的阈值电压。

5. 发明授权

US07015761B2 Power amplifier module 有权
标题翻译：功率放大器模块
公开(公告)号：US07015761B2
公开(公告)日：2006-03-21
申请号：US10975431
申请日：2004-10-29
申请人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
发明人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
IPC分类号： H03F3/68 , H03G3/20
CPC分类号： H03F1/56 , H03F1/0222 , H03F1/0261 , H03F1/0266 , H03F1/301 , H03F1/302 , H03F1/306 , H03F3/19 , H03F3/1935 , H03F2200/318 , H03F2200/453
摘要： A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.
摘要翻译：提供了一种CDMA系统，其包括具有DC电流放大器的功率放大器模块。直流和电流放大器检测输入信号的直流分量，并放大该检测到的直流分量。功率放大器模块还包括放大器，其接收由直流电流放大器放大的电流作为输入电流。提供给DC电流放大器的输入信号响应于输入功率电平而改变。

6. 发明申请

US20050088236A1 Power amplifier module 有权
标题翻译：功率放大器模块
公开(公告)号：US20050088236A1
公开(公告)日：2005-04-28
申请号：US10975431
申请日：2004-10-29
申请人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
发明人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
IPC分类号： H03F3/68 , H03F1/02 , H03F1/30 , H03F1/32 , H03F3/19 , H03F3/193 , H03F3/213 , H03G3/10
CPC分类号： H03F1/56 , H03F1/0222 , H03F1/0261 , H03F1/0266 , H03F1/301 , H03F1/302 , H03F1/306 , H03F3/19 , H03F3/1935 , H03F2200/318 , H03F2200/453
摘要： A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.
摘要翻译：提供了一种CDMA系统，其包括具有DC电流放大器的功率放大器模块。直流和电流放大器检测输入信号的直流分量，并放大该检测到的直流分量。功率放大器模块还包括放大器，其接收由直流电流放大器放大的电流作为输入电流。提供给DC电流放大器的输入信号响应于输入功率电平而改变。

7. 发明授权

US06822517B2 Power amplifier module 有权
公开(公告)号：US06822517B2
公开(公告)日：2004-11-23
申请号：US10753484
申请日：2004-01-09
申请人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
发明人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
IPC分类号： H03F368
CPC分类号： H03F1/56 , H03F1/0222 , H03F1/0261 , H03F1/0266 , H03F1/301 , H03F1/302 , H03F1/306 , H03F3/19 , H03F3/1935 , H03F2200/318 , H03F2200/453
摘要： A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.

8. 发明授权

US06710649B2 Power amplifier module 有权
标题翻译：功率放大器模块
公开(公告)号：US06710649B2
公开(公告)日：2004-03-23
申请号：US10239157
申请日：2002-11-21
申请人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
发明人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
IPC分类号： H03F368
CPC分类号： H03F1/56 , H03F1/0222 , H03F1/0261 , H03F1/0266 , H03F1/301 , H03F1/302 , H03F1/306 , H03F3/19 , H03F3/1935 , H03F2200/318 , H03F2200/453
摘要： A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.
摘要翻译：功率放大器模块包括多个放大器级，每个放大器级包括用于模拟放大器的操作的参考放大器。根据输入功率电平流向形成每个参考放大器的双极晶体管的基极的电流被检测，放大并作为相应放大器的晶体管的基极电流提供。

9. 发明授权

US07817437B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07817437B2
公开(公告)日：2010-10-19
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

10. 发明授权

US07001819B2 Semiconductor device and power amplifier using the same 失效
公开(公告)号：US07001819B2
公开(公告)日：2006-02-21
申请号：US10750772
申请日：2004-01-05
申请人： Kazuhiro Mochizuki , Tohru Oka , Isao Ohbu , Kiichi Yamashita
发明人： Kazuhiro Mochizuki , Tohru Oka , Isao Ohbu , Kiichi Yamashita
IPC分类号： H01L21/8222
CPC分类号： H01L21/8252 , H01L27/0605 , H01L2224/48091 , H01L2224/48227 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12032 , H01L2924/1305 , H01L2924/1423 , H01L2924/15153 , H01L2924/1517 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H03F1/302 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising a plurality of heterojunction bipolar transistors with their base layer made of GaAsSb or InGaAs, a GaAs substrate, and a buffer layer placed between the base layer and the substrate is fabricated. The substrate and the buffer layer that lie directly under the intrinsic regions of a part or all of the plurality of heterojunction bipolar transistors are removed. Thereby, a semiconductor device using HBTs that can operate with a power supply voltage of 2V or below can be provided at reduced cost as a well-reliable product, and a power amplifier with high power conversion efficiency can be provided.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式