专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090161329A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090161329A1
公开(公告)日：2009-06-25
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/66
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

2. 发明申请

US20070001300A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070001300A1
公开(公告)日：2007-01-04
申请号：US11451579
申请日：2006-06-13
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/34
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

3. 发明申请

US20060279359A1 High-frequency power amplifier circuit and electronic part for communication 有权
公开(公告)号：US20060279359A1
公开(公告)日：2006-12-14
申请号：US11504600
申请日：2006-08-16
申请人： Takayuki Tsutsui , Masahiro Tsuchiya , Tetsuaki Adachi
发明人： Takayuki Tsutsui , Masahiro Tsuchiya , Tetsuaki Adachi
IPC分类号： H03G3/10
CPC分类号： H03G3/3042 , H03F1/0205 , H03F1/0272 , H03F3/193 , H03F2200/372 , H03F2200/393 , H03G3/3047 , H04B1/0475 , H04B1/406 , H04B2001/0416
摘要： A wireless communication system has a first operation mode (GSM mode) for amplifying a phase-modulated high frequency signal with a high frequency power amplifier circuit and a second operation mode (EDGE mode) for amplifying a phase and amplitude-modulated high frequency signal with the amplifier circuit. The amplifier circuit has an input of a high frequency signal, with the amplitude and frequency being fixed in both the first and second operation modes, and operates by being controlled for the bias state of each amplifying stage in accordance with the output control signal produced by a control circuit based on the demanded output level (Vapc) and the detected output level (VSNS) so that the amplifier circuit performs signal amplification to meet the demanded output level.

4. 发明授权

US07116173B2 High-frequency power amplifier circuit and electronic part for communication 有权
标题翻译：高频功放电路和电子部件进行通讯
公开(公告)号：US07116173B2
公开(公告)日：2006-10-03
申请号：US10498489
申请日：2002-02-28
申请人： Takayuki Tsutsui , Masahiro Tsuchiya , Tetsuaki Adachi
发明人： Takayuki Tsutsui , Masahiro Tsuchiya , Tetsuaki Adachi
IPC分类号： H03G3/10
CPC分类号： H03G3/3042 , H03F1/0205 , H03F1/0272 , H03F3/193 , H03F2200/372 , H03F2200/393 , H03G3/3047 , H04B1/0475 , H04B1/406 , H04B2001/0416
摘要： A wireless communication system has a first operation mode (GSM mode) for amplifying a phase-modulated high frequency signal with a high frequency power amplifier circuit and a second operation mode (EDGE mode) for amplifying a phase and amplitude-modulated high frequency signal with the amplifier circuit. The amplifier circuit has an input of a high frequency signal, with the amplitude and frequency being fixed in both the first and second operation modes, and operates by being controlled for the bias state of each amplifying stage in accordance with the output control signal produced by a control circuit based on the demanded output level (Vapc) and the detected output level (VSNS) so that the amplifier circuit performs signal amplification to meet the demanded output level.
摘要翻译：无线通信系统具有用于利用高频功率放大器电路放大相位调制的高频信号的第一操作模式（GSM模式）和用于放大相位和幅度调制的高频信号的第二操作模式（EDGE模式）放大电路。放大器电路具有高频信号的输入，振幅和频率在第一和第二操作模式中都是固定的，并且通过根据由放大级产生的输出控制信号被控制为每个放大级的偏置状态来操作基于所需输出电平（Vapc）和检测输出电平（VSNS）的控制电路，使得放大器电路执行信号放大以满足所要求的输出电平。

5. 发明授权

US06992528B2 Semiconductor device 有权
公开(公告)号：US06992528B2
公开(公告)日：2006-01-31
申请号：US10870921
申请日：2004-06-21
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H03G3/20
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

6. 发明申请

US20050245212A1 Electronic component for amplifying high frequency power and radio communication system 失效
标题翻译：用于放大高频电源和无线电通信系统的电子元件
公开(公告)号：US20050245212A1
公开(公告)日：2005-11-03
申请号：US10520706
申请日：2002-09-05
申请人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
发明人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
IPC分类号： H03F3/24 , H03G3/30 , H04B1/04 , H04B1/40 , H03C1/62 , H04B17/00
CPC分类号： H04B1/005 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/19105 , H03F3/24 , H03F2200/429 , H03F2203/7236 , H03G3/3047 , H04B1/0483 , H04B1/406 , H04B2001/0408 , H01L2924/00
摘要： A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS includes: a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor; and a second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side and a second current mirror circuit for passing current proportional to current of the transistor. A sense resistor for converting current on the transfer side of the current mirror circuits to voltage, using the voltage as an output level detection signal, comparing the detected output level with a required output level, accordingly controlling the output level, and converting current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.
摘要翻译：作为能够在两个频带（例如GSM和DCS）中进行通信的无线电通信系统的组件的高频功率模块包括：用于输出检测的第一晶体管，用于接收与第一个信号的输入信号相同的信号用于放大GSM侧的高频信号的功率放大晶体管和用于通过与晶体管的电流成比例的电流的第一电流镜电路; 以及用于输出检测的第二晶体管，用于接收用于放大DCS侧的高频信号的第二功率放大晶体管的输入信号和用于通过与晶体管的电流成比例的电流的第二电流镜电路。一种检测电阻器，用于将电流镜电路的传输侧的电流转换为电压，使用电压作为输出电平检测信号，将检测到的输出电平与所需的输出电平相比较，从而控制输出电平，并转换从第一和第二电流镜电路到电压由GSM和DCS共享。

7. 发明授权

US06765268B2 Multiple transistors having a common gate pad between first group of drains and second group of drains 有权
标题翻译：多个晶体管具有在第一组漏极和第二组漏极之间的公共栅极焊盘
公开(公告)号：US06765268B2
公开(公告)日：2004-07-20
申请号：US10291834
申请日：2002-11-12
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L2976
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

8. 发明授权

US06463267B1 High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages 失效
标题翻译：具有放大级的高频功率放大装置，其具有较低幅度的增益控制信号，其应用于较早的前级
公开(公告)号：US06463267B1
公开(公告)日：2002-10-08
申请号：US09550903
申请日：2000-04-17
申请人： Hitoshi Akamine , Nobuhiko Ishihara , Tetsuaki Adachi , Yasuhiro Nunogawa , Kogi Sugita
发明人： Hitoshi Akamine , Nobuhiko Ishihara , Tetsuaki Adachi , Yasuhiro Nunogawa , Kogi Sugita
IPC分类号： H04B700
CPC分类号： H01L23/66 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/48 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01019 , H01L2924/01024 , H01L2924/014 , H01L2924/10161 , H01L2924/10162 , H01L2924/1306 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03G3/3042 , H03G3/3047 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A high frequency power amplifying apparatus is provided with an amplifying section with a plurality of amplifying stages connected in cascade. A power control signal is supplied to the amplifying section through a control terminal so as to control the output of the high frequency power amplifying apparatus. Each of the amplifying stages has a gain smaller than that of a preceding stage. Gain control signals generated from the power control signal are supplied to the respective amplifying stages. Dividing resistors are connected in series with one another between the control terminal and a reference potential so as to divide the voltage of the power control signal to thereby generate a plurality of different gain control signals. Different ones of the gain control signals are supplied to the respective amplifying stages, an absolute value of a voltage of the gain control signal applied to each stage is larger than that applied to an earlier preceding stage.
摘要翻译：高频功率放大装置具有放大部分，其具有串联连接的多个放大级。功率控制信号通过控制端子提供给放大部分，以控制高频功率放大装置的输出。每个放大级具有比前一级小的增益。从功率控制信号生成的增益控制信号被提供给相应的放大级。分压电阻器在控制端子和参考电位之间彼此串联连接，以便分压功率控制信号的电压从而产生多个不同的增益控制信号。不同的增益控制信号被提供给各个放大级，施加到每一级的增益控制信号的电压的绝对值大于施加到前一级的增益控制信号的电压的绝对值。

9. 发明授权

US08022537B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08022537B2
公开(公告)日：2011-09-20
申请号：US12203851
申请日：2008-09-03
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L23/48 , H01L23/52 , H01R11/00
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

10. 发明授权

US07817437B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07817437B2
公开(公告)日：2010-10-19
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式