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1. 发明授权

US08343692B2 Exposure apparatus inspection mask and exposure apparatus inspection method 有权
标题翻译：曝光装置检查面罩和曝光装置检查方法
公开(公告)号：US08343692B2
公开(公告)日：2013-01-01
申请号：US12886157
申请日：2010-09-20
申请人： Nobuhiro Komine , Kazuya Fukuhara
发明人： Nobuhiro Komine , Kazuya Fukuhara
IPC分类号： G03F1/38
CPC分类号： G03F1/44 , G03F7/70641 , G03F7/70683
摘要： According to one embodiment, an exposure apparatus inspection mask includes a substrate and a first pattern portion. The substrate has a major surface reflective to exposure light. The first pattern portion is provided on the major surface. The first pattern portion includes a first lower layer and a plurality of first reflection layers. The first lower layer is provided on the major surface and includes a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and is absorptive to the exposure light. The plurality of first reflection layers are provided on a side of the first lower layer opposite to the substrate, are periodically arranged at the pitch along the first direction, expose at least part of each of the plurality of first absorption layers, and have higher reflectance for the exposure light than the first absorption layers.
摘要翻译：根据一个实施例，曝光装置检查掩模包括基板和第一图案部分。基板具有反射曝光光的主表面。第一图案部分设置在主表面上。第一图案部分包括第一下层和多个第一反射层。第一下层设置在主表面上，并且包括沿着平行于主表面的第一方向以规定间距周期性地排列并且吸收曝光光的多个第一吸收层。多个第一反射层设置在与基板相对的第一下层的一侧上，沿着第一方向以间距周期性地布置，暴露多个第一吸收层中的每一个的至少一部分，并且具有更高的反射率用于曝光光比第一吸收层。

2. 发明申请

US20110300472A1 Exposure Apparatus Inspection Mask and Exposure Apparatus Inspection Method 有权
标题翻译：曝光装置检查面具和曝光装置检查方法
公开(公告)号：US20110300472A1
公开(公告)日：2011-12-08
申请号：US12886157
申请日：2010-09-20
申请人： Nobuhiro KOMINE , Kazuya Fukuhara
发明人： Nobuhiro KOMINE , Kazuya Fukuhara
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/44 , G03F7/70641 , G03F7/70683
摘要： According to one embodiment, an exposure apparatus inspection mask includes a substrate and a first pattern portion. The substrate has a major surface reflective to exposure light. The first pattern portion is provided on the major surface. The first pattern portion includes a first lower layer and a plurality of first reflection layers. The first lower layer is provided on the major surface and includes a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and is absorptive to the exposure light. The plurality of first reflection layers are provided on a side of the first lower layer opposite to the substrate, are periodically arranged at the pitch along the first direction, expose at least part of each of the plurality of first absorption layers, and have higher reflectance for the exposure light than the first absorption layers.
摘要翻译：根据一个实施例，曝光装置检查掩模包括基板和第一图案部分。基板具有反射曝光光的主表面。第一图案部分设置在主表面上。第一图案部分包括第一下层和多个第一反射层。第一下层设置在主表面上，并且包括沿着平行于主表面的第一方向以规定间距周期性地排列并且吸收曝光光的多个第一吸收层。多个第一反射层设置在与基板相对的第一下层的一侧上，沿着第一方向以间距周期性地布置，暴露多个第一吸收层中的每一个的至少一部分，并且具有更高的反射率用于曝光光比第一吸收层。

3. 发明授权

US08293456B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08293456B2
公开(公告)日：2012-10-23
申请号：US12390157
申请日：2009-02-20
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

4. 发明授权

US08085393B2 Exposure apparatus inspection method and method for manufacturing semiconductor device 失效
标题翻译：曝光装置检查方法及制造半导体装置的方法
公开(公告)号：US08085393B2
公开(公告)日：2011-12-27
申请号：US12554782
申请日：2009-09-04
申请人： Kentaro Kasa , Takashi Sato , Kazuya Fukuhara
发明人： Kentaro Kasa , Takashi Sato , Kazuya Fukuhara
IPC分类号： G01N11/00
CPC分类号： G03F7/70641
摘要： A mask pattern includes a first pattern having a line-and-space pattern extending in a first direction, a second pattern formed as a line-and-space pattern having a larger period than the first pattern and extending in the first direction, a third pattern having a line-and-space pattern extending in a second direction, and a fourth pattern formed as a line-and-space pattern having a larger period than the third pattern and extending in the second direction. Illumination light is obliquely incident on the first pattern and the second pattern from a first oblique direction, illumination light is obliquely incident on the third pattern and the fourth pattern from a second oblique direction, and a relative distance from the first pattern to the second pattern transferred on to an image receptor and a relative distance from the third pattern to the fourth pattern transferred onto the image receptor are measured and an optical characteristic of an exposure apparatus is ascertained based on the relative distances.
摘要翻译：掩模图案包括具有沿第一方向延伸的线间距图案的第一图案，形成为具有比第一图案更长的周期并沿第一方向延伸的线间距图案的第二图案，第三图案图案具有沿第二方向延伸的线间距图案，以及形成为具有比第三图案更大的周期并沿第二方向延伸的线间距图案的第四图案。照明光从第一倾斜方向倾斜入射在第一图案和第二图案上，照明光从第二倾斜方向倾斜入射在第三图案和第四图案上，并且从第一图案到第二图案的相对距离转印到图像接收器上，并且测量从第三图案到转印到图像接收器上的第四图案的相对距离，并且基于相对距离确定曝光设备的光学特性。

5. 发明申请

US20110298116A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110298116A1
公开(公告)日：2011-12-08
申请号：US13118401
申请日：2011-05-28
申请人： Shinya MIZUSAKI , Kazuya Fukuhara
发明人： Shinya MIZUSAKI , Kazuya Fukuhara
IPC分类号： H01L23/495 , H01L21/78
CPC分类号： H01L23/49541 , H01L21/561 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L23/544 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68327 , H01L2223/54413 , H01L2223/54433 , H01L2223/54486 , H01L2224/05554 , H01L2224/27013 , H01L2224/32057 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83001 , H01L2224/83385 , H01L2224/85001 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： An object of the present invention is to improve the quality control of a semiconductor device. By forming an inscription comprising a culled or pixel skipping pattern of dimples on the upper surface of a die pad in a QFN, it is possible to confirm the inscription by X-ray inspection or the like even after individuation and specify a cavity of a resin molding die. Further, it is possible to specify the position of a device region in a lead frame. As a result, when a defect appears, it is possible to sort a defective QFN by appearance inspection and improve quality control in the assembly of a QFN.
摘要翻译：本发明的目的在于提高半导体器件的质量控制。通过在QFN中在芯片垫的上表面上形成包括凹陷的剔除或像素跳过图案的题字，即使在个体化之后也可以通过X射线检查等来确认题字，并指定树脂的空腔成型模具。此外，可以指定引线框架中的器件区域的位置。结果，当出现缺陷时，可以通过外观检查对有缺陷的QFN进行分类，并提高组装QFN的质量控制。

6. 发明申请

US20110177458A1 EXPOSURE DETERMINING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权
标题翻译：曝光测定方法，制造半导体器件的方法和计算机程序产品
公开(公告)号：US20110177458A1
公开(公告)日：2011-07-21
申请号：US13007238
申请日：2011-01-14
申请人： Toshiya KOTANI , Kazuya Fukuhara , Michiya Takimoto , Hidefumi Mukai , Soichi Inoue
发明人： Toshiya KOTANI , Kazuya Fukuhara , Michiya Takimoto , Hidefumi Mukai , Soichi Inoue
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译：根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光基于掩模图案图，在基板上形成图案的曝光中的每个位置。

7. 发明申请

US20100315643A1 METHOD FOR INSPECTING NANO-IMPRINT TEMPLATE 有权
标题翻译：检查纳米印模的方法
公开(公告)号：US20100315643A1
公开(公告)日：2010-12-16
申请号：US12776003
申请日：2010-05-07
申请人： Hiroyuki KASHIWAGI , Kazuya Fukuhara
发明人： Hiroyuki KASHIWAGI , Kazuya Fukuhara
IPC分类号： G01N21/00
CPC分类号： G01N21/956 , B82Y20/00 , G01N2021/4707 , G01N2021/95615
摘要： A method for inspecting a nano-imprint template, includes irradiating light onto a template for nano-imprinting from a back surface side of the template, the template having a front surface where a pattern is formed, detecting near-field light which is generated near the front surface of the template by the irradiation of the light, and performing an inspection of the template on the basis of the detected near-field light.
摘要翻译：一种用于检查纳米压印模板的方法，包括将光从模板的背面侧照射到用于纳米压印的模板上，模板具有形成图案的正面，检测近场产生的近场光通过照射光的模板的前表面，并且基于检测到的近场光执行模板的检查。

8. 发明申请

US20090231568A1 METHOD OF MEASURING WAVEFRONT ERROR, METHOD OF CORRECTING WAVEFRONT ERROR, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：测量波形错误的方法，校正波形错误的方法以及制造半导体器件的方法
公开(公告)号：US20090231568A1
公开(公告)日：2009-09-17
申请号：US12400701
申请日：2009-03-09
申请人： Kazuya Fukuhara
发明人： Kazuya Fukuhara
IPC分类号： G03B27/52 , G01B11/00
CPC分类号： G03B27/52 , G03F7/70433 , G03F7/706 , G03F7/7085 , G03F7/70983
摘要： A method of measuring a wavefront error of an exposure light that occurs when the exposure light passes through an optical system that is used in an exposure apparatus is proposed. The method includes measuring the wavefront error of the exposure light by using a measurement optical element including a pellicle arranged in an optical path of the exposure light that passes through the optical system.
摘要翻译：提出了一种测量当曝光光通过用于曝光设备的光学系统时发生的曝光光的波前误差的方法。该方法包括通过使用包括布置在通过光学系统的曝光光的光路中的防护薄膜的测量光学元件来测量曝光光的波前误差。

9. 发明授权

US07537869B2 Evaluation of pattern formation process, photo masks for the evaluation, and fabrication method of a semiconductor device with the evaluation process 失效
标题翻译：图案形成处理的评价，用于评价的光掩模以及具有评价过程的半导体器件的制造方法
公开(公告)号：US07537869B2
公开(公告)日：2009-05-26
申请号：US11108862
申请日：2005-04-19
申请人： Masafumi Asano , Kazuya Fukuhara
发明人： Masafumi Asano , Kazuya Fukuhara
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70675 , G03F1/44 , G03F7/70625 , Y10S430/143 , Y10S430/146
摘要： A method for evaluating a pattern formation process includes applying a photoresist on a substrate, transferring a first pattern and a second pattern adjacent to or at least partly overlapped with each other to the photoresist, wherein the first pattern includes a plurality of lines consisting of transparent regions, having the same length and a line-width less than or on the order of wavelengths of visible light, periodically located parallel to one another with end portions aligned on both sides thereof, and the second pattern comprises a transparent region having a larger area compared with each of the lines, and determining, in a first pattern formed on the substrate with the first pattern transferred to the photoresist, by an optical means, an amount of shorting of the lines in a direction parallel to the line.
摘要翻译：一种用于评估图案形成工艺的方法包括在衬底上施加光致抗蚀剂，将第一图案和与第一图案相邻或至少部分重叠的第二图案转印到光致抗蚀剂上，其中第一图案包括多个由透明区域，具有小于或等于可见光波长的相同长度和线宽，周期性地彼此平行地定位，其端部在其两侧对齐，并且第二图案包括具有较大面积的透明区域与每条线相比较，并且在通过光学装置将第一图案转印到光致抗蚀剂的基板上形成的第一图案中确定在与该线平行的方向上的线的短路量。

10. 发明申请

US20090004581A1 Exposure apparatus, exposure method and optical proximity correction method 审中-公开
标题翻译：曝光装置，曝光方法和光学邻近校正方法
公开(公告)号：US20090004581A1
公开(公告)日：2009-01-01
申请号：US11907191
申请日：2007-10-10
申请人： Kazuya Fukuhara , Tatsuhiko Higashiki
发明人： Kazuya Fukuhara , Tatsuhiko Higashiki
IPC分类号： G03C5/00 , G03F7/00 , G03B27/72
CPC分类号： G03F7/70441 , G02B5/205 , G03F7/70191 , G03F7/70625
摘要： There is disclosed an exposure apparatus which includes an illumination optical system including a light source which emits illumination light, a mask stage which holds a photomask having a mask pattern thereon to be illuminated with the illumination light, and a light intensity distribution filter arranged on a plane, which plane is positioned in the illumination optical system and is optically in relation of Fourier transform to the mask pattern, the light intensity distribution filter configured to vary a light intensity distribution of the illumination light in a cross section of a bundle of the illumination light.
摘要翻译：公开了一种曝光装置，其包括：照明光学系统，其包括发射照明光的光源;掩模台，其保持具有用照明光照射的掩模图案的光掩模;以及光强度分布滤光器，平面，该平面位于照明光学系统中，并且在光学上与傅立叶变换相关联，该光强度分布滤光器被配置为改变照明束的横截面中的照明光的光强度分布光。

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