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1. 发明申请

US20160293798A1 PVD BUFFER LAYERS FOR LED FABRICATION 审中-公开
公开(公告)号：US20160293798A1
公开(公告)日：2016-10-06
申请号：US15183594
申请日：2016-06-15
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L33/12 , H01L33/32 , H01L33/00 , H01L33/06
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

2. 发明申请

US20130285065A1 PVD BUFFER LAYERS FOR LED FABRICATION 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US20130285065A1
公开(公告)日：2013-10-31
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

3. 发明授权

US09396933B2 PVD buffer layers for LED fabrication 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US09396933B2
公开(公告)日：2016-07-19
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205 , H01L33/00 , C30B23/02 , C30B29/40 , H01L33/12
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

4. 发明授权

US09349595B2 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09349595B2
公开(公告)日：2016-05-24
申请号：US13546800
申请日：2012-07-11
申请人： Cheng-Hsiung Tsai , Chung-Ju Lee , Hsin-Chieh Yao , Tien-I Bao
发明人： Cheng-Hsiung Tsai , Chung-Ju Lee , Hsin-Chieh Yao , Tien-I Bao
IPC分类号： H01L21/311 , H01L21/033 , H01L21/768 , H01L21/02
CPC分类号： H01L21/0337 , H01L21/02115 , H01L21/31144 , H01L21/76816
摘要： Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a material layer is formed over a workpiece. The workpiece includes a first portion, a second portion, and a hard mask disposed between the first portion and the second portion. The material layer is patterned, and first spacers are formed on sidewalls of the patterned material layer. The patterned material layer is removed, and the second portion of the workpiece is patterned using the first spacers as an etch mask. The first spacers are removed, and second spacers are formed on sidewalls of the patterned second portion of the workpiece. The patterned second portion of the workpiece is removed, and the hard mask of the workpiece is patterned using the second spacers as an etch mask. The first portion of the workpiece is patterned using the hard mask as an etch mask.
摘要翻译：公开了制造半导体器件的方法。在一个实施例中，材料层形成在工件上。工件包括设置在第一部分和第二部分之间的第一部分，第二部分和硬掩模。图案化材料层，并且在图案化材料层的侧壁上形成第一间隔物。去除图案化的材料层，并且使用第一间隔件作为蚀刻掩模来对工件的第二部分进行图案化。去除第一间隔物，并且在工件的图案化第二部分的侧壁上形成第二间隔物。去除工件的图案化的第二部分，并且使用第二间隔件作为蚀刻掩模来对工件的硬掩模进行图案化。使用硬掩模作为蚀刻掩模来对工件的第一部分进行图案化。

5. 发明申请

US20140017894A1 Methods of Manufacturing Semiconductor Devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20140017894A1
公开(公告)日：2014-01-16
申请号：US13546800
申请日：2012-07-11
申请人： Cheng-Hsiung Tsai , Chung-Ju Lee , Hsin-Chieh Yao , Tien-I Bao
发明人： Cheng-Hsiung Tsai , Chung-Ju Lee , Hsin-Chieh Yao , Tien-I Bao
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/02115 , H01L21/31144 , H01L21/76816
摘要： Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a material layer is formed over a workpiece. The workpiece includes a first portion, a second portion, and a hard mask disposed between the first portion and the second portion. The material layer is patterned, and first spacers are formed on sidewalls of the patterned material layer. The patterned material layer is removed, and the second portion of the workpiece is patterned using the first spacers as an etch mask. The first spacers are removed, and second spacers are formed on sidewalls of the patterned second portion of the workpiece. The patterned second portion of the workpiece is removed, and the hard mask of the workpiece is patterned using the second spacers as an etch mask. The first portion of the workpiece is patterned using the hard mask as an etch mask.
摘要翻译：公开了制造半导体器件的方法。在一个实施例中，材料层形成在工件上。工件包括设置在第一部分和第二部分之间的第一部分，第二部分和硬掩模。图案化材料层，并且在图案化材料层的侧壁上形成第一间隔物。去除图案化的材料层，并且使用第一间隔件作为蚀刻掩模来对工件的第二部分进行图案化。去除第一间隔物，并且在工件的图案化第二部分的侧壁上形成第二间隔物。去除工件的图案化的第二部分，并且使用第二间隔件作为蚀刻掩模来对工件的硬掩模进行图案化。使用硬掩模作为蚀刻掩模来对工件的第一部分进行图案化。

6. 发明申请

US20060002053A1 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
公开(公告)号：US20060002053A1
公开(公告)日：2006-01-05
申请号：US11221169
申请日：2005-09-07
申请人： Karl Brown , Semyon Sherstinsky , Wei Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01T23/00
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

7. 发明授权

US09034756B2 Integrated circuit interconnects and methods of making same 有权
标题翻译：集成电路互连及其制作方法
公开(公告)号：US09034756B2
公开(公告)日：2015-05-19
申请号：US13559107
申请日：2012-07-26
申请人： Cheng-Hsiung Tsai , Chung-Ju Lee , Tsung-Jung Tsai , Hsiang-Huan Lee , Ming Han Lee
发明人： Cheng-Hsiung Tsai , Chung-Ju Lee , Tsung-Jung Tsai , Hsiang-Huan Lee , Ming Han Lee
IPC分类号： H01L21/44 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/5226 , H01L21/76802 , H01L21/7682 , H01L21/76831 , H01L21/76834 , H01L21/76885 , H01L23/5222 , H01L23/528 , H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/00 , H01L2924/0002
摘要： A copper alloy layer is blanket deposited over a low k dielectric layer and in via openings within the low k dielectric layer. The blanket deposited layer is then anisotropically etch to form horizontal interconnects. The interconnects are annealed to form a metal oxide barrier lining. A second low k dielectric layer is then depositing over the horizontal interconnects. Air gaps can be formed between adjacent interconnects to lower parasitic capacitance therebetween.
摘要翻译：铜合金层被覆盖在低k电介质层和低k电介质层内的通孔中。然后将覆盖层沉积层各向异性地蚀刻以形成水平互连。将互连件退火以形成金属氧化物屏障衬里。然后第二低k电介质层在水平互连上沉积。可以在相邻互连之间形成气隙，以降低它们之间的寄生电容。

8. 发明申请

US20100039747A1 ELECTROSTATIC CHUCK ASSEMBLY 有权
标题翻译：静电块组件
公开(公告)号：US20100039747A1
公开(公告)日：2010-02-18
申请号：US12539410
申请日：2009-08-11
申请人： Steven V. Sansoni , Cheng-Hsiung Tsai , Shambhu N. Roy , Karl M. Brown , Vijay D. Parkhe , Hari Ponnekanti
发明人： Steven V. Sansoni , Cheng-Hsiung Tsai , Shambhu N. Roy , Karl M. Brown , Vijay D. Parkhe , Hari Ponnekanti
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01J37/32431 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H01L21/68785 , H01L2924/0002 , H02N13/00 , H01L2924/00
摘要： Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.
摘要翻译：本发明的实施例提供了一种经济高效的静电卡盘组件，其能够在超高真空环境中在宽的温度范围内运行，同时使静电卡盘组件内的热机械应力最小化。在一个实施例中，静电卡盘组件包括具有夹持电极的介电体，该夹持电极包括与电介质体的CTE匹配的具有热膨胀系数（CTE）的金属基质复合材料。

9. 发明申请

US20080173326A1 OXYGEN PLASMA CLEAN TO REMOVE CARBON SPECIES DEPOSITED ON A GLASS DOME SURFACE 失效
标题翻译：氧气等离子体清洁去除在玻璃表面上沉积的碳物质
公开(公告)号：US20080173326A1
公开(公告)日：2008-07-24
申请号：US11626121
申请日：2007-01-23
申请人： QUANCHENG GU , Cheng-Hsiung Tsai , John C. Forster , Xiaoxi Guo , Larry Frazier
发明人： QUANCHENG GU , Cheng-Hsiung Tsai , John C. Forster , Xiaoxi Guo , Larry Frazier
IPC分类号： B08B7/04
CPC分类号： C23C14/564 , Y10S438/905 , Y10S438/906
摘要： A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing gases which react with the carbon containing films to form volatile carbon containing compounds.
摘要翻译：提供了一种用于在预清洁过程中使用的介电圆顶表面的原位清洁方法。通过提供与含碳膜反应形成含挥发性碳的化合物的一种或多种氧化气体的等离子体来除去含碳沉积物。

10. 发明授权

US07907384B2 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US07907384B2
公开(公告)日：2011-03-15
申请号：US12315679
申请日：2008-12-04
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/68 , H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.
摘要翻译：基板支撑件具有静电卡盘，该静电卡盘包括具有电介质的静电托盘，该电介质覆盖能够被加电以对加工气体通电的电极。卡盘具有用于接收基板的前侧表面和具有环形凸缘的基板。弹簧加载的传热板接触基板，并且具有包括第一和第二螺旋通道的流体通道。底座位于传热板的下方。

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