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1. 发明授权

US08795488B2 Apparatus for physical vapor deposition having centrally fed RF energy 有权
标题翻译：用于物理气相沉积的装置具有中央馈送的RF能量
公开(公告)号：US08795488B2
公开(公告)日：2014-08-05
申请号：US13048440
申请日：2011-03-15
申请人： Muhammad Rasheed , Lara Hawrylchak , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Alan Ritchie
发明人： Muhammad Rasheed , Lara Hawrylchak , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Alan Ritchie
IPC分类号： C23C14/40
CPC分类号： H01J37/3405 , H01J37/3411
摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.
摘要翻译：在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

2. 发明申请

US20100252417A1 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：US20100252417A1
公开(公告)日：2010-10-07
申请号：US12754473
申请日：2010-04-05
申请人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
发明人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

3. 发明申请

US20110209995A1 Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit 审中-公开
标题翻译：物理气相沉积与可变电容调谐器和反馈电路
公开(公告)号：US20110209995A1
公开(公告)日：2011-09-01
申请号：US12823893
申请日：2010-06-25
申请人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
发明人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
IPC分类号： C23C14/34
CPC分类号： H01J37/3444 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/3438
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.
摘要翻译：提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机旋转，以及连接到基座的可变电容器的输出。可变电容器的期望状态与过程控制器中的过程配方相关联。当执行处理配方时，将可变电容器置于所需状态。

4. 发明授权

US09580796B2 Deposition apparatus and methods to reduce deposition asymmetry 有权
标题翻译：沉积装置和减少沉积不对称的方法
公开(公告)号：US09580796B2
公开(公告)日：2017-02-28
申请号：US13173197
申请日：2011-06-30
申请人： Alan Ritchie , Michael S. Cox
发明人： Alan Ritchie , Michael S. Cox
IPC分类号： C23C14/00 , C23C14/35 , C23C16/517 , H01J37/32 , H01J37/34
CPC分类号： C23C14/35 , C23C16/517 , H01J37/32651 , H01J37/34 , H01J37/3411 , H01J37/3455
摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.
摘要翻译：本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有基本上符合中空圆筒形状的导电中空圆筒和基本上连续的接地屏蔽。

5. 发明申请

US20120000772A1 Deposition Apparatus And Methods To Reduce Deposition Asymmetry 有权
标题翻译：沉积装置和减少沉积不对称的方法
公开(公告)号：US20120000772A1
公开(公告)日：2012-01-05
申请号：US13173197
申请日：2011-06-30
申请人： Alan Ritchie , Michael S. Cox
发明人： Alan Ritchie , Michael S. Cox
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , C23C16/517 , H01J37/32651 , H01J37/34 , H01J37/3411 , H01J37/3455
摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.
摘要翻译：本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有基本上符合中空圆筒形状的导电中空圆筒和基本上连续的接地屏蔽。

6. 发明授权

US08129290B2 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US08129290B2
公开(公告)日：2012-03-06
申请号：US11400275
申请日：2006-04-07
申请人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
摘要翻译：沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅，然后重复这些步骤以增加由此产生的氮化硅的厚度。也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力由此形成。在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

7. 发明授权

US07588036B2 Chamber clean method using remote and in situ plasma cleaning systems 失效
标题翻译：室内清洁方法使用远程和原位等离子体清洁系统
公开(公告)号：US07588036B2
公开(公告)日：2009-09-15
申请号：US10187817
申请日：2002-07-01
申请人： Zhenjiang Cui , Michael S. Cox , Canfeng Lai , Paddy Krishnaraj
发明人： Zhenjiang Cui , Michael S. Cox , Canfeng Lai , Paddy Krishnaraj
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01J37/32862 , C23C16/4405 , H01J2237/022 , Y10S438/905
摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.
摘要翻译：一种用于从衬底处理室的一个或多个内表面去除不想要的沉积物的方法。根据一个实施例，该方法包括在衬底处理室内的衬底上执行衬底处理操作，然后将衬底转移出衬底处理室; 将第一蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应性物质并将反应物质输送到基底处理室中以去除不需要的沉积物堆积的第一部分; 然后将第二蚀刻剂气体流入基板处理室，并从第二气体在基板处理室内形成等离子体，以便去除不需要的沉积物积聚的第二部分。

8. 发明授权

US07399388B2 Sequential gas flow oxide deposition technique 失效
标题翻译：顺序气流氧化沉积技术
公开(公告)号：US07399388B2
公开(公告)日：2008-07-15
申请号：US10627228
申请日：2003-07-25
申请人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham
发明人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham
IPC分类号： C23C14/34 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/507
摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
摘要翻译：一种在基板上沉积石英玻璃绝缘膜的方法。在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

9. 发明授权

US06712020B2 Toroidal plasma source for plasma processing 失效
标题翻译：用于等离子体处理的环形等离子体源
公开(公告)号：US06712020B2
公开(公告)日：2004-03-30
申请号：US10170827
申请日：2002-06-12
申请人： Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
发明人： Michael S. Cox , Canfeng Lai , Robert B. Majewski , David P. Wanamaker , Christopher T. Lane , Peter Loewenhardt , Shamouil Shamouilian , John P. Parks
IPC分类号： C23C1600
CPC分类号： H01J37/32009 , H01J37/321
摘要： A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.
摘要翻译：衬底处理室（10）内的环形等离子体源（28）。环形等离子体源形成具有θ对称性的极向等离子体。极向等离子体电流基本上平行于等离子体产生结构的表面，从而减少内壁的溅射侵蚀。等离子体电流类似地基本上平行于腔室内的衬底（34）的工艺表面（32）。在另一实施例中，衬底和等离子体源之间的成形构件（66）以选定的方式控制等离子体密度，以提高等离子体处理的均匀性。

10. 发明授权

US08486242B2 Deposition apparatus and methods to reduce deposition asymmetry 失效
标题翻译：沉积装置和减少沉积不对称的方法
公开(公告)号：US08486242B2
公开(公告)日：2013-07-16
申请号：US12906632
申请日：2010-10-18
申请人： Michael S. Cox
发明人： Michael S. Cox
IPC分类号： C23C14/35 , C23C16/00
CPC分类号： C23C14/35 , C23C14/34 , C23C16/50 , H01J37/32669 , H01J37/3405
摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.
摘要翻译：本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有导电中空圆柱体和导电中空圆柱体外部的磁体，其能够影响导电中空圆柱体上的电流密度。

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